Patent application number | Description | Published |
20100059772 | Light Emitting Device - The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (θ, φ) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction φ and is substantially represented by I (θ, φ)=I (θ). I (θ, φ) represents a light intensity distribution in a direction (θ, φ), θ represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0≦θ≦90°), φ represents a rotation angle around the normal (0≦φ≦360°), and I (θ) represents a monotone decreasing function with which 0 is approached when θ=90° is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body. | 03-11-2010 |
20100308376 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects, and the annealing is repeated a plurality of times. | 12-09-2010 |
20110006399 | SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER MANUFACTURING METHOD - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising a single-crystal Si wafer; an insulating layer that has an open region and that is formed on the wafer; a Ge layer that is epitaxially grown on the wafer in the open region; and a GaAs layer that is epitaxially grown on the Ge layer, wherein the Ge layer is formed by (i) placing the wafer in a CVD reaction chamber that can create an ultra-high vacuum low-pressure state, (ii) performing a first epitaxial growth at a first temperature at which raw material gas can thermally decompose, (iii) performing a second epitaxial growth at a second temperature that is higher than the first temperature, (iv) performing a first annealing, at a third temperature that is loss than a melting point of Ge, on epitaxial layers formed by the first and second epitaxial growths, and (v) performing a second annealing at a fourth temperature that is lower than the third temperature. The Ge layer may he formed by repeating the first annealing and the second annealing a plurality of times, and the insulating layer may be a silicon oxide layer. | 01-13-2011 |
20110012175 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; and a functional layer that is crystal-grown on the Ge layer. The Ge layer may be shaped as an island having a size that docs not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal dejects when the Ge layer is annealed at a certain temperature. | 01-20-2011 |
20110018030 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si water with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects. | 01-27-2011 |
20110037099 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si wafer with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; a Ge layer that is crystal-grown on the wafer and shaped as an isolated island; a butler layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be shaped as an island having a size that does not exceed double a distance moved by crystal defects as a result of annealing the Ge layer at a certain temperature for a certain time. The Ge layer may be shaped as an island having a size for which stress due to a difference relative to a thermal expansion coefficient of Si, which is material of the wafer, does not cause crystal defects when the Ge layer is annealed at a certain temperature. | 02-17-2011 |
20110186816 | SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD - A device forming thin film for forming a semiconductor device; an inhibition portion that surrounds the device forming thin film and inhibits growth of a precursor of the device forming thin film into a crystal; a sacrificial growth portion that is formed by causing the precursor to sacrificially grow into a crystal, and is positioned around the device forming thin film separated by the inhibition portion; and a protection film that covers a top portion of the sacrificial growth portion and exposes a top portion of the device forming thin film are included. The protection film may be made of polyimide. | 08-04-2011 |
20110316051 | SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE - The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed. | 12-29-2011 |