Patent application number | Description | Published |
20140284615 | METHOD FOR MANUFACTURING A SILICON CARBIDE DEVICE AND A SILICON CARBIDE DEVICE - A method for manufacturing a silicon carbide device includes providing a silicon carbide wafer and manufacturing a mask layer on top of the silicon carbide wafer. Further, the method includes structuring the mask layer at an edge of a silicon carbide device to be manufactured, so that the mask layer includes a bevel at the edge of the silicon carbide device to be manufactured. Additionally, the method includes etching the mask layer and the silicon carbide wafer by a mutual etching process, so that the bevel of the mask layer is reproduced at the edge of the silicon carbide device. | 09-25-2014 |
20140291697 | SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE DEVICE - A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure. | 10-02-2014 |
20140353667 | Semiconductor Device and Manufacturing Method Therefor - A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided. | 12-04-2014 |
20150014704 | Bipolar Transistor and a Method for Manufacturing a Bipolar Transistor - A bipolar transistor includes a semiconductor structure including an emitter area, a base area and a collector area. The emitter area is electrically connected to an emitter contact of the bipolar transistor. Further, the emitter area has a first conductivity type. The base area is electrically connected to a base contact of the bipolar transistor. Further, the base area has at least mainly a second conductivity type. The collector area is electrically connected to a collector contact of the bipolar transistor and has at least mainly the first conductivity type. Further, the collector area includes a plurality of enclosed sub areas having the second conductivity type or the base area includes a plurality of enclosed sub areas having the first conductivity type. | 01-15-2015 |
20150069411 | SEMICONDUCTOR DEVICE, JUNCTION FIELD EFFECT TRANSISTOR AND VERTICAL FIELD EFFECT TRANSISTOR - A semiconductor device according to an embodiment is at least partially arranged in or on a substrate and includes a recess forming a mesa, wherein the mesa extends along a direction into the substrate to a bottom plane of the recess and includes a semiconducting material of a first conductivity type, the semiconducting material of the mesa including at least locally a first doping concentration not extending further into the substrate than the bottom plane. The semiconductor device further includes an electrically conductive structure arranged at least partially along a sidewall of the mesa, the electrically conductive structure forming a Schottky or Schottky-like electrical contact with the semiconducting material of the mesa, wherein the substrate comprises the semiconducting material of the first conductivity type comprising at least locally a second doping concentration different from the first doping concentration along a projection of the mesa into the substrate. | 03-12-2015 |
20150349097 | Method of Manufacturing a Semiconductor Device Having a Rectifying Junction at the Side Wall of a Trench - A method for forming a field-effect semiconductor device includes: providing a wafer having a main surface and a first semiconductor layer of a first conductivity type; forming at least two trenches from the main surface partly into the first semiconductor layer so that each of the at least two trenches includes, in a vertical cross-section substantially orthogonal to the main surface, a side wall and a bottom wall, and that a semiconductor mesa is formed between the side walls of the at least two trenches; forming at least two second semiconductor regions of a second conductivity type in the first semiconductor layer so that the bottom wall of each of the at least two trenches adjoins one of the at least two second semiconductor regions; and forming a rectifying junction at the side wall of at least one of the at least two trenches. | 12-03-2015 |
20160104779 | SILICON CARBIDE DEVICE AND A METHOD FOR FORMING A SILICON CARBIDE DEVICE - A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure. | 04-14-2016 |
20160118484 | Bipolar Transistor with Enclosed Sub Areas and a Method for Manufacturing Such a Bipolar Transistor - A bipolar transistor includes a semiconductor structure having an emitter area of a first conductivity type electrically connected to an emitter contact of the bipolar transistor, a base area of a second conductivity type electrically connected to a base contact of the bipolar transistor, and a collector area of the first conductivity type electrically connected to a collector contact of the bipolar transistor. The collector area encloses sub areas of the second conductivity type, or the base area encloses sub areas of the first conductivity type. A doping concentration of the enclosed sub area and a doping concentration of the collector area or base area is selected so that a lateral integral of the doping concentration of the p-doped regions and a lateral integral of the doping concentration of the n-doped regions are basically equal. | 04-28-2016 |
Patent application number | Description | Published |
20150061089 | Vertical Semiconductor Device and Method of Manufacturing Thereof - A vertical semiconductor device has a semiconductor body with a first surface and a second surface substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. In a sectional plane perpendicular to the first surface, the semiconductor body includes an n-doped first semiconductor region in ohmic contact with the second metallization, a plurality of p-doped second semiconductor regions in ohmic contact with the first metallization, and a plurality of p-doped embedded semiconductor regions. The p-doped second semiconductor regions substantially extend to the first surface, are spaced apart from one another and form respective first pn-junctions with the first semiconductor region. The p-doped embedded semiconductor regions are spaced apart from one another, from the p-doped second semiconductor regions, from the first surface and from the second surface, and form respective second pn-junctions with the first semiconductor region. | 03-05-2015 |
20150087129 | Method for Producing Semiconductor Regions Including Impurities - A method for producing semiconductor regions including impurities includes forming a trench in a first surface of a semiconductor body. Impurity atoms are implanted into a bottom of the trench. The trench is extended deeper into the semiconductor body, thereby forming a deeper trench. Impurity atoms are implanted into a bottom of the deeper trench. | 03-26-2015 |
20150123145 | Semiconductor Device and Method for Producing the Same - A semiconductor device includes a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, including amorphous molybdenum nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided. | 05-07-2015 |
20150123149 | Semiconductor Device and Method for Producing the Same - A semiconductor device comprises a semiconductor body with a front face and a back face, having an active zone located at the front face, a front surface metallization layer having a front face and a back face directed towards the active zone, the front surface metallization layer being provided on the front face of the semiconductor body and being electrically connected to the active zone, and a first barrier layer, comprising amorphous metal nitride, located between the active zone and the metallization layer. Further, a method for producing such a device is provided. | 05-07-2015 |
20150137142 | Junction Field Effect Transistor Cell with Lateral Channel Region - A semiconductor device includes a junction field effect transistor cell with a top gate region, a lateral channel region and a buried gate region. The lateral channel region is arranged between the top gate region and the buried gate region along a vertical direction with respect to a first surface of a semiconductor body. The lateral channel region comprises at least two first zones of a first conductivity type and at least one second zone of a second conductivity type, wherein the first and second zones alternate along the vertical direction. The embodiments provide well-defined channel widths and facilitate the adjustment of pinch-off voltages as well as the manufacture of normally-off junction field effect transistor cells. | 05-21-2015 |
20150137143 | Junction Field Effect Transistor Cell with Lateral Channel Region - A junction field effect transistor cell of a semiconductor device includes a top gate region, a lateral channel region and a buried gate region arranged along a vertical direction. The lateral channel region includes first zones of a first conductivity type and second zones of a second conductivity type which alternate along a lateral direction perpendicular to the vertical direction. A pinch-off voltage of the junction field effect transistor cell does not depend, or only to a low degree depends, on a vertical extension of the lateral channel region. | 05-21-2015 |
20150144966 | SCHOTTKY DIODE WITH REDUCED FORWARD VOLTAGE - A semiconductor component includes a semiconductor body of a first conduction type and a metal layer on the semiconductor body, wherein the metal layer forms with the semiconductor body a Schottky contact along a contact surface. A doping concentration of the first conduction type on the contact surface varies along a direction of the contact surface. | 05-28-2015 |
20150155279 | Semiconductor Device with Bipolar Junction Transistor Cells - A semiconductor device includes a bipolar junction transistor cell including an emitter region which is at least partly formed between mesas of a semiconductor body. The emitter region extends between a first surface of the semiconductor body and an emitter bottom plane. The transistor cell further includes a collector region and a base region that separates the emitter region and the collector region. | 06-04-2015 |
20150255362 | Semiconductor Device with a Passivation Layer and Method for Producing Thereof - A semiconductor device includes a semiconductor body having a first surface, a contact electrode on the first surface, and a passivation layer on the first surface adjacent the contact electrode and partially overlapping the contact electrode. The passivation layer comprises a layer stack with a first layer comprising an oxide on the first surface, and a second layer comprising a nitride on the first layer. | 09-10-2015 |
20150263178 | JFET AND METHOD OF MANUFACTURING THEREOF - A JFET has a semiconductor body with a first surface and second surface substantially parallel to the first surface. A source metallization and gate metallization are arranged on the first surface. A drain metallization is arranged on the second surface. In a sectional plane substantially perpendicular to the first surface, the semiconductor body includes: a first semiconductor region in ohmic contact with the source and drain metallizations, at least two second semiconductor regions in ohmic contact with the gate metallization, spaced apart from one another, and forming respective first pn-junctions with the first semiconductor region, and at least one body region forming a second pn-junction with the first semiconductor region. The at least one body region is in ohmic contact with the source metallization. At least a portion of the at least one body region is, in a projection onto the first surface, arranged between the two second semiconductor regions. | 09-17-2015 |
20150270131 | Method of Manufacturing a Vertical Semiconductor Device - A method for producing a vertical semiconductor device includes providing a semiconductor substrate having a first surface and comprising an n-doped first semiconductor layer, forming a hard mask on the first surface, the hard mask comprising openings defining first zones in the n-doped first semiconductor layer, implanting acceptor ions of a first maximum energy through the hard mask into the first zones, replacing the hard mask by an inverted mask comprising openings that are substantially complementary to the openings of the hard mask; implanting acceptor ions of a second maximum energy different to the first maximum energy through the inverted mask into second zones of the n-doped first semiconductor layer, and carrying out at least one temperature step to activate the acceptor ions in the first zones and the second zones. | 09-24-2015 |
20150364550 | OPTIMIZED LAYER FOR SEMICONDUCTOR - Representative implementations of devices and techniques provide an optimized layer for a semiconductor component. In an example, a doped portion of a wafer, forming a substrate layer may be transferred from the wafer to an acceptor, or handle wafer. A component layer may be applied to the substrate layer. The acceptor wafer is detached from the substrate layer. In some examples, further processing may be executed with regard to the substrate and/or component layers. | 12-17-2015 |
Patent application number | Description | Published |
20080213797 | IMMUNOASSAYS EXHIBITING A REDUCTION IN PROZONE PHENOMENA - The present invention relates to immunoassays for detecting or quantifying at least one analyte of interest in a test sample. Specifically, the immunoassays of the present invention exhibit a reduction in prozone phenomena. | 09-04-2008 |
20090104632 | MODIFIED TWO-STEP IMMUNOASSAY EXHIBITING INCREASED SENSITIVITY - The present invention relates to immunoassays for detecting or quantifying at least one analyte of interest in a test sample which exhibits improved sensitivity and/or a reduction in non-specific background compared to the immunoassay formats known in the art. | 04-23-2009 |
20090104634 | ONE-STEP IMMUNOASSAYS EXHIBITING INCREASED SENSITIVITY AND SPECIFICITY - The present disclosure relates to immunoassays for detecting or quantifying at least one analyte of interest in a test sample which exhibits improved sensitivity and specificity compared to the immunoassay formats known in the art. | 04-23-2009 |
20090275062 | METHOD OF TACROLIMUS EXTRACTION AND QUANTIFICATION USING AQUEOUS DETERGENTS - The present invention relates to a method of extracting tacrolimus in a test blood sample to use in a tacrolimus quantification assay. The method of the present invention extracts tacrolimus in non-precipitating, non-denaturing aqueous environment, avoiding cumbersome manual pretreatment procedures or the use of organic solvents. The method of the present invention permits full automation of tacrolimus quantification assays. | 11-05-2009 |
20100267055 | ONE-STEP IMMUNOASSAYS EXHIBITING INCREASED SENSITIVITY AND SPECIFICITY - The present disclosure relates to immunoassays for detecting or quantifying at least one analyte of interest in a test sample which exhibits improved sensitivity or sensitivity and specificity compared to the immunoassay formats known in the art. | 10-21-2010 |
20100297778 | Conjugate Having Cleavable Linking Agent - A method and reagent that can be used to eliminate the signal caused by non-specific binding of a labeled conjugate, e.g., a specific binding member attached to a label, to a solid phase, e.g., a magnetic microparticle. The method and the reagent involve the use of a cleavable linking agent to link the label to the specific binding member that specifically binds to the analyte. The use of a cleavable linking agent would allow the release of the label from the specific binding member from the complex comprising the magnetic microparticle, analyte, and labeled conjugate into solution. After the release of the label, the magnetic microparticles having any label non-specifically bound thereto, are removed from the reaction mixture. Only the label, e.g., acridinium, from the labeled conjugate would remain in the elution well. The conjugate that is non-specifically bound through interaction between the label and the solid phase, e.g., a magnetic particle, would remain bound to the solid phase, and would subsequently be removed from the elution well when the solid phase is removed from the elution well and transferred to another well the introduction of additional reagent(s). | 11-25-2010 |
20120100632 | MONOCLONAL ANTIBODIES TO HUMAN IMMUNODEFICIENCY VIRUS AND USES THEREOF - The present invention relates to novel monoclonal antibodies which may be used in the detection of Human Immunodeficiency Virus (HIV). These antibodies exhibit an unusually high degree of sensitivity, a remarkably broad range of specificity, and bind to novel shared, non-cross-reactive epitopes. In particular, the monoclonal antibodies of the present invention may be utilized to detect HIV-1 antigen and HIV-2 core antigen in a patient sample. | 04-26-2012 |
20130130233 | MONOCLONAL ANTIBODIES TO HUMAN IMMUNODEFICIENCY VIRUS AND USES THEREOF - The present invention relates to novel monoclonal antibodies which may be used in the detection of Human Immunodeficiency Virus (HIV). These antibodies exhibit an unusually high degree of sensitivity, a remarkably broad range of specificity, and bind to novel shared, non-cross-reactive epitopes. In particular, the monoclonal antibodies of the present invention may be utilized to detect HIV-1 antigen and HIV-2 core antigen in a patient sample. | 05-23-2013 |
20130164767 | ASSAYS FOR HUMAN NT-PRO B-TYPE NATRIURETIC PEPTIDE, HUMAN PRO B-TYPE NATRIURETIC PEPTIDE AND HUMAN B-TYPE NATRIURETIC PEPTIDE - The present disclosure relates to assays for detecting and/or quantifying the amount of human NT-pro B-type natriuretic peptide, human pro B-type natriuretic peptide and human B-type natriuretic peptide in a test sample. | 06-27-2013 |