Ludikhuize
Adrianus W. Ludikhuize, Valkenswaard NL
Patent application number | Description | Published |
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20100065885 | SOI DEVICE WITH MORE IMMUNITY FROM STUBSTRATE VOLTAGE - A semiconductor on insulator device has an insulator layer, an active layer ( | 03-18-2010 |
Adrianus Willem Ludikhuize, Eindhoven NL
Patent application number | Description | Published |
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20090079272 | Integrated Half-Bridge Power Circuit - A down converter includes an integrated circuit, which includes a control FET (CF) and a synchronous rectifier FET (SF). The control FET is a lateral double-diffused (LDMOS) FET, and the conductivity-type of the LDMOS FET and the conductivity-type of the substrate are of the same type. | 03-26-2009 |
Adrianus Willem Ludikhuize, Valkenswaard NL
Patent application number | Description | Published |
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20080265319 | METHOD OF PROVIDING ENHANCED BREAKDOWN BY DILUTED DOPING PROFILES IN HIGH-VOLTAGE TRANSISTORS - A method of fabricating high-voltage semiconductor devices, the semiconductor devices and a mask for implanting dopants in a semiconductor are described. | 10-30-2008 |
20090045460 | MOSFET FOR HIGH VOLTAGE APPLICATIONS AND A METHOD OF FABRICATING SAME - A PMOS device comprises a semiconductor-on-insulator (SOI) substrate having a layer of insulating material over which is provided an active layer of n-type semiconductor material. | 02-19-2009 |