Patent application number | Description | Published |
20080263953 | Reformed Gas Production Method and Reformed Gas Production Apparatus - The invention provides a method for operating a reformed gas production apparatus with which it is possible to achieve a high reforming efficiency while preventing a drop in catalyst activity due to the deposition of carbon. The reformed gas production method uses a reforming catalyst to reform a fuel that contains a hydrocarbon having at least two carbon atoms to produce a reformed gas that includes methane, hydrogen, and carbon monoxide. With this method, a fluid that includes the fuel, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas, is supplied to a reforming reaction region, and with the thermal decomposition index temperature of the fuel, which is determined by the type and the concentration of the hydrocarbons having at least two carbon atoms that make up the fuel, serving as an upper limit temperature of the reforming reaction region, the fluid is brought into contact with the reforming catalyst to produce the reformed gas. | 10-30-2008 |
20090071876 | DESULFURIZING AGENT MANUFACTURING METHOD AND HYDROCARBON DESULFURIZATION METHOD - A desulfurizing agent is produced by mixing a copper compound, a zinc compound and an ammonium compound with an aqueous solution of an alkali substance to prepare or precipitate followed by calcitrating the resulting precipitate to form a calcined precipitate into a shape form of a copper oxide-zinc oxide-aluminum oxide mixture. The shaped form is impregnated with iron or nickel and calcined to produce a calcined oxide and reduced with hydrogen to form a sulfur-absorption desulfurizing agent. | 03-19-2009 |
20120224997 | Reformed Gas Production Method And Reformed Gas Production Apparatus - The present invention relates to a reformed gas production apparatus that includes a reaction chamber containing a reforming catalyst, a supply route to the reaction chamber, a reformed gas conduction route from the reaction chamber, and a reaction chamber temperature control means that controls a temperature of the reaction chamber. The supply route supplies a fluid that includes a fuel containing a hydrocarbon having at least two carbon atoms, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas. The fuel can be a mixed fuel that includes a plurality of types of hydrocarbons that each have at least two carbon atoms. The reaction chamber temperature control means relates to the thermal decomposition index temperature of the fuel, which defines an upper limit temperature of the reforming reaction region. | 09-06-2012 |
20130160650 | CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME | 06-27-2013 |
Patent application number | Description | Published |
20090079072 | Semiconductor device having low dielectric insulating film and manufacturing method of the same - A semiconductor device includes a semiconductor substrate having an integrated circuit. A low dielectric film wiring line laminated structure portion is provided on the semiconductor substrate except a peripheral portion thereof, and is constituted by low dielectric films and wiring lines. The low dielectric film has a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the laminated structure portion. A connection pad portion is arranged on the insulating film and connected to a connection pad portion of an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film is provided on the insulating film which surrounds the pump electrode and on the peripheral portion of the semiconductor substrate. The side surfaces of the laminated structure portion are covered with the insulating film or the sealing film. | 03-26-2009 |
20090079073 | Semiconductor device having low dielectric insulating film and manufacturing method of the same - A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film. | 03-26-2009 |
20090243097 | SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC CONSTANT FILM AND MANUFACTURING METHOD THEREOF - A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks. | 10-01-2009 |
20100144095 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM - First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped. | 06-10-2010 |
20100144096 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM - First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped. | 06-10-2010 |
20100144097 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE IN WHICH BOTTOM SURFACE AND SIDE SURFACE OF SEMICONDUCTOR SUBSTRATE ARE COVERED WITH RESIN PROTECTIVE FILM - First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped. | 06-10-2010 |
20140073090 | SEMICONDUCTOR DEVICE HAVING LOW DIELECTRIC INSULATING FILM AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the bump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film. | 03-13-2014 |
Patent application number | Description | Published |
20120219718 | CO2-FACILITATED TRANSPORT MEMBRANE AND METHOD FOR PRODUCING THE SAME | 08-30-2012 |
20130287678 | GAS SEPARATION APPARATUS, MEMBRANE REACTOR, AND HYDROGEN PRODUCTION APPARATUS - In a gas separation apparatus that separates carbon dioxide and water vapor from a first mixture gas containing a predetermined major component gas, carbon dioxide, and water vapor, the energy utilization efficiency thereof is improved. Also, by utilizing the function of this gas separation apparatus, a membrane reactor and a hydrogen production apparatus exhibiting high energy utilization efficiency are provided. The gas separation apparatus is constructed to include a first separation membrane | 10-31-2013 |
20140151602 | APPARATUS AND METHOD FOR CARBON MONOXIDE SHIFT CONVERSION, AND HYDROGEN PRODUCTION APPARATUS - A shift conversion catalyst layer is divided into at least two front and back stages. A first catalyst and a second catalyst are provided on the upstream side and the downstream side, respectively. The first catalyst has a property that a carbon monoxide conversion rate decreases with an increase in carbon dioxide concentration in a supplied reaction gas at a constant carbon monoxide concentration in the supplied reaction gas and a constant reaction temperature. The first catalyst is combined with the second catalyst such that the degree of decrease in carbon monoxide conversion rate with respect to an increase in carbon dioxide concentration in the supplied reaction gas in the second catalyst is lower than that in the first catalyst. Whereby, the conversion rate of a carbon monoxide concentration of a carbon monoxide shift conversion apparatus can be improved without increasing the used amount of a shift conversion catalyst. | 06-05-2014 |
20140290479 | GAS SEPARATION APPARATUS, MEMBRANE REACTOR, AND HYDROGEN PRODUCTION APPARATUS - In a gas separation apparatus that separates carbon dioxide and water vapor from a first mixture gas containing at least carbon dioxide, nitrogen and water vapor, the energy utilization efficiency thereof is improved. The gas separation apparatus is constructed to include a first separation membrane | 10-02-2014 |
20140352540 | CO2-FACILITATED TRANSPORT MEMBRANE AND PRODUCTION METHOD OF SAME | 12-04-2014 |
Patent application number | Description | Published |
20120320387 | IMAGE FORMING APPARATUS - A feeder is configured to feed a recording medium. An image forming unit has a maximum sheet feed width corresponding to a longer side length of a maximum size recording medium to be accommodated in the feeder, and is disposed above the feeder in such a manner as to allow the maximum size recording medium to enter the image forming unit with a longer side first. | 12-20-2012 |
20120320396 | IMAGE FORMING APPARATUS - An image forming unit is accommodated in a space defined by a frame body. An image reader is disposed above the image forming unit. A first supporting member is secured between an upper portion of the frame body and a bottom portion of the image reader and configured to support the image reader to the frame body in a cantilever manner. A second supporting member is secured on an upper portion of the frame body and configured to receive a bottom portion of the image reader supported by the first supporting member in a cantilever manner. | 12-20-2012 |
20120321339 | IMAGE FORMING APPARATUS - A feeder has a longer side direction orthogonal to a conveyance direction of a recording medium, and is configured to feed a maximum size recording medium with a longer side first. An image forming unit has a maximum sheet feed width corresponding to a longer side length of the maximum size recording medium, and is configured to print a toner image corresponding to digital image data onto the recording medium. An electrical component unit is configured to control the feeder and the image forming unit. The image forming unit and the electrical component unit are respectively disposed on both sides of the feeder in a shorter side direction. | 12-20-2012 |
20120321365 | IMAGE FORMING APPARATUS, IMAGE FORMING SYSTEM, AND POST PROCESSING METHOD - An image forming apparatus includes a feeder having a longer side direction orthogonal to a conveyance direction of a recording medium, and feeds a maximum size recording medium with a longer side first, an image forming unit having a maximum sheet feed width corresponding to a longer side length of the maximum size recording medium, and prints a toner image onto the recording medium, and a sub feeder that can feed the maximum size recording medium to the image forming unit independently from the feeder. A post processing apparatus receives a printed recording medium and executes post processing on a side of the recording medium. A feeding source of the maximum size recording medium is selected from the feeder and the sub feeder for executing the post processing on the longer and shorter sides of the maximum size recording medium, respectively. | 12-20-2012 |