Patent application number | Description | Published |
20080203514 | High Performance CdxZn1-xTe X-Ray and Gamma Ray Radiation Detector and Method of Manufacture Thereof - The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector. | 08-28-2008 |
20090041648 | Radiation detector crystal and method of formation thereof - A radiation detector crystal is made from Cd | 02-12-2009 |
20090065701 | CdZnTe Device Using Constrained Design For High-Flux X-Ray Spectroscopic Imaging Applications - A CdZnTe photon counting detector includes a core material of Cd | 03-12-2009 |
20090218647 | Semiconductor Radiation Detector With Thin Film Platinum Alloyed Electrode - A compound semiconductor radiation detector includes a body of compound semiconducting material having an electrode on at least one surface thereof. The electrode includes a layer of a compound of a first element and a second element. The first element is platinum and the second element includes at least one of the following: chromium, cobalt, gallium, germanium, indium, molybdenum, nickel, palladium, ruthenium, silicon, silver, tantalum, titanium, tungsten, vanadium, zirconium, manganese, iron, magnesium, copper, tin, or gold. The layer can further include sublayers, each of which is made from a different one of the second elements and platinum as the first element. | 09-03-2009 |
20090250692 | Radiation Detector With Asymmetric Contacts - A room temperature radiation detector is made from a semi-insulating Cd | 10-08-2009 |
20100078558 | Infra-red light stimulated cdZnTe spectroscopic semiconductor x-ray and gamma-ray radiation detector - A method of detecting radiation by which residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device at any temperature. The energy of an infra-red light source is tuned within a predetermined band gap energy range and crystals are transparent to the infra-red light of the energy. Thus, other than the one associated with the ionization of the target deep-level defects, no other absorption occurs. Because of this low absorption, infra-red irradiation can be performed through any surface of the crystal that is transparent to the infra-red light which allows irradiation geometry from any side surface(s) of the detector crystals. | 04-01-2010 |
20100078559 | Infra-red light stimulated high-flux semiconductor x-ray and gamma-ray radiation detector - A method of detecting radiation through which the residence time of charge carriers is dramatically reduced by an external optical energy source and the occupancy of the deep-level defects is maintained close to the thermal equilibrium of the un-irradiated device even under high-flux exposure conditions. Instead of relying on thermal energy to release the trapped carriers, infra-red light radiation is used to provide sufficient energy for the trapped carriers to escape from defect levels. Cd | 04-01-2010 |
20110136287 | ANNEALING OF SEMI-INSULATING CdZnTe CRYSTALS - In a method of annealing a Cd | 06-09-2011 |