Patent application number | Description | Published |
20100074837 | Production Method Of Fine Particle Zinc Oxide Powder And Cosmetics Containing The Same - It is to provide a production method of zinc oxide powder excellent in UV protection ability and transparency and to provide cosmetics containing the same. The fine particle zinc oxide powder is produced by subjecting either an aqueous solution containing both a water-soluble zinc salt and a carboxylic acid or an aqueous solution containing a water-soluble zinc carboxylate to pH adjustment with an alkali carbonate agent and aging the resulting mixture without calcining. The alkali carbonate agent may be 0.1 to 2 mol/L aqueous solution and the carboxylate group is 1 to 5 times in moles with respect to zinc. The pH adjustment can be carried out by dropwise addition of the alkali carbonate aqueous solution at 0.5 to 5 mL/min per 100 mL of either the aqueous solution containing both the water-soluble zinc salt and the carboxylic acid or the aqueous solution containing the water-soluble zinc carboxylate. | 03-25-2010 |
20130149815 | NONVOLATILE MEMORY ELEMENT MANUFACTURING METHOD AND NONVOLATILE MEMORY ELEMENT - A method of manufacturing a nonvolatile memory element includes: forming a first conductive film above a substrate; forming, above the first conductive film, a first metal oxide layer and a second metal oxide layer having different degrees of oxygen deficiency and a second conductive film; forming a second electrode by patterning the second conductive film; forming a variable resistance layer by patterning the first metal oxide layer and the second metal oxide layer; removing a side portion of the variable resistance layer in a surface parallel to a main surface of the substrate to a position that is further inward than an edge of the second electrode; and forming a first electrode by patterning the first conductive film after or during the removing. | 06-13-2013 |
20140061573 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY DEVICE, AND METHODS OF MANUFACTURING THE SAME - A nonvolatile memory element includes: a lower electrode formed above a substrate; a first variable resistance layer formed above the lower electrode and comprising a first metal oxide; a second variable resistance layer formed above the first variable resistance layer and comprising a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide; and an upper electrode formed above the second variable resistance layer. A single step is formed in an interface between the first variable resistance layer and the second variable resistance layer. The second variable resistance layer is formed to cover the step and have, above the step, a bend covering the step. The bend, seen from above, has only one corner in a surface of the second variable resistance layer. | 03-06-2014 |
20140097396 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer connected to the second electrode; the non-volatile memory device including a connection layer which is provided between the second electrode and the electrically-conductive layer to connect the second electrode and the electrically-conductive layer to each other, and comprises an electrically-conductive material different from a material constituting the electrically-conductive layer; | 04-10-2014 |
20140110659 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a nonvolatile memory device includes: forming a first electrode; forming, above the first electrode, a metal oxide material layer including a first metal oxide; forming a mask above part of the metal oxide material layer main surface; forming, in a region of the metal oxide material layer not covered by the mask, a high oxygen concentration region including a second metal oxide having a lower degree of oxygen deficiency than the first metal oxide; removing the mask; forming, above a first variable resistance layer including the high oxygen concentration region and a low oxygen concentration region that is a region of the metal oxide material layer other than the high oxygen concentration region, a second variable resistance layer including a third metal oxide having a lower degree of oxygen deficiency than the first metal oxide; and forming a second electrode above the second variable resistance layer. | 04-24-2014 |
20140113430 | METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method of manufacturing a semiconductor device according to the present invention includes: forming a lower electrode above a substrate; forming, above the lower electrode, a first variable resistance layer comprising a first metal oxide; forming a step region in the first variable resistance layer by collision of ions excited by plasma; removing residue of the first variable resistance layer created in the forming of the step region; forming a second variable resistance layer which covers the step region of the first variable resistance layer, comprises a second metal oxide having a degree of oxygen deficiency lower than a degree of oxygen deficiency of the first metal oxide, and has a bend on a step formed along an edge of the step region; and forming an upper electrode above the second variable resistance layer. | 04-24-2014 |
20140145136 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side. | 05-29-2014 |
20140175369 | MANUFACTURING METHOD OF NONVOLATILE MEMORY DEVICE AND NONVOLATILE MEMORY DEVICE - A method of manufacturing a non-volatile memory device comprises: forming a first electrode layer; a variable resistance material layer, a second electrode layer; and a hard mask layer, forming a first resist mask extending in a first direction on the hard mask layer; forming a first hard mask extending in the first direction by etching the hard mask layer using the first resist mask; forming a second resist mask extending in a second direction, on the first hard mask such that the width of the second resist mask is greater than the width of the first resist mask; forming a second hard mask by etching the first hard mask using the second resist mask; and forming a variable resistance element by patterning, by etching the second electrode layer, the variable resistance material layer and the first electrode layer using the second hard mask. | 06-26-2014 |
Patent application number | Description | Published |
20080213558 | Fluorescent Material With Semiconductor Nanoparticles Dispersed Therein at High Concentration and Method For Manufacturing Such Fluorescent Material - The present invention provides a thin-film fluorescent material in which semiconductor nanoparticles in a stable condition maintain a high fluorescence quantum yield and can be held at a high concentration in a glass matrix. The present invention also provides optical devices using the thin-film fluorescent material, such as high-brightness displays and lighting systems. The present invention relates to a fluorescent material, in which semiconductor nanoparticles with a fluorescence quantum yield of 15% or more and a diameter of 2 to 5 nanometers are dispersed in a glass matrix at a concentration of 5×10 | 09-04-2008 |
20090108235 | Semiconductor-Nanoparticle-Dispersed Small Glass Particles and Process for Preparing the same - The present invention provides semiconductor-nanoparticle-dispersed small silica glass particles that emit bright fluorescent light with high fluorescence quantum yield and high density, compared to the conventional semiconductor-nanoparticle-dispersed small glass particles, and that have excellent fluorescence intensity stability over time; and a process for preparing the same. The semiconductor-nanoparticle-dispersed silica glass particles have a mean particle size of not less than 10 nanometers and not more than 5 micrometers, and contain a hydrolyzed alkoxide and semiconductor nanoparticles at a concentration of not less than 2×10 | 04-30-2009 |
20100129455 | NANOPARTICLE-DISPERSED FINE GLASS BEADS HAVING A CAVITY THEREIN, AND METHOD OF PRODUCING THE SAME - The present invention provides fine silicon-containing glass beads each having one or more cavities therein and containing nanoparticles in a glass phase of each of the silicon-containing glass beads, and a method of producing such glass beads, and also provides silicon-containing glass beads containing nanoparticles, which may be identical to or different from the nanoparticles in the glass phase, and a functional material such as pharmaceutical molecules (e.g., materials having fluorescent properties, magnetic properties, drug effects, etc.), and a method of producing such glass beads. | 05-27-2010 |
20100252778 | NOVEL NANOPARTICLE PHOSPHOR - An object of the present invention is to reduce the incompleteness of the surface state due to lattice constant and steric hindrance, which was heretofore nearly unavoidable, in the surface treatment of light-emitting semiconductor nanoparticles. The present invention provides an excellent luminescent material that has enhanced photoluminescence efficiency, reduced photoluminescence spectrum width, and increased chemical resistance. Specifically, the present invention provides a luminescent material comprising semiconductor nanoparticles having a mean particle size of 2 to 12 nm and a band gap of 3.8 eV or less, each of the semiconductor nanoparticles being coated with a silicon-containing layer, the semiconductor nanoparticles in the luminescent material having a peak emission wavelength 20 nm or more towards the longer-wavelength side than the peak emission wavelength of the semiconductor nanoparticles alone. | 10-07-2010 |
20100295016 | FLUORESCENT FIBER CONTAINING SEMICONDUCTOR NANOPARTICLES - The present invention provides a luminescent fiber, which retains a certain shape with assembled nanoparticles, and a method for producing the luminescent fiber. Specifically, the present invention provides a luminescent fiber comprising silicon and semiconductor nanoparticles having a mean particle size of 2 to 12 nm, the luminescent fiber having a diameter of 20 nm to 2 μm, a length of 40 nm to 500 μm, an aspect ratio of 2 to 1,000, and photoluminescence efficiency of not less than 5%. | 11-25-2010 |