Patent application number | Description | Published |
20090109400 | GAZE DIRECTION MEASURING METHOD AND GAZE DIRECTION MEASURING DEVICE - A face horizontal direction measuring unit measures the angle of the face horizontal direction for a face image obtained by an imaging unit. By using information on the radius of the head and information on the shoulder position of the person obtained by the aforementioned measurement, a face vertical displacement measuring unit measures a face displacement in the vertical direction not affected by a head posture. According to the obtained displacement, the face angle in the vertical direction is decided. By using the obtained face direction, the angle of the gaze in the horizontal direction and the eyeball radius are measured. Further, a gaze vertical displacement measuring unit is provided for which measuring the pupil center position against the eyeball center position as the gaze displacement in the vertical direction. This displacement amount is used to measure the gaze angle in the vertical direction. | 04-30-2009 |
20100027890 | IMAGE INFORMATION PROCESSING METHOD AND APPARATUS - An eye-gaze direction calculation unit calculates the eye-gaze direction in an input facial image of a person by carrying out prescribed operation processing based on iris shape data output from an iris detection unit and face-direction measurement data output from a face-direction measurement unit. The eye-gaze direction of the facial image of the person can be measured on the basis of accurate iris shape information obtained by an iris shape detection unit. The iris and sclera regions can be estimated on the basis of the detected eyelid contour information, thereby making it possible to accurately estimate the shape of the iris. | 02-04-2010 |
20100262281 | RELATIONSHIP ANALYSIS METHOD, RELATIONSHIP ANALYSIS PROGRAM, AND RELATIONSHIP ANALYSIS APPARATUS - To obtain a high accuracy marketing analysis result, while reducing an effect of a low accuracy visual line detection processing, a storage unit of a visual line analysis apparatus stores therein, for each commodity, a basic zone including the commodity and an extended zone at least a portion of which, is overlapped with the basic zone. The basic zone and the extended zone are stored in association with each other. An attention degree calculation part of the visual line analysis apparatus compares positional information on a visual line data detected by the visual line detection part and positional information on each zone defined in a zone definition data to calculate an attention degree for each zone, aggregates attention degrees in each zone for each commodity corresponding to the each zone, calculates an attention degree data for each commodity, and stores the calculated data in the storage unit. | 10-14-2010 |
Patent application number | Description | Published |
20140063571 | IMAGE READING DEVICE AND IMAGE FORMING APPARATUS - In an image reading device, a movable part provided below a document platen in a housing is moved in a sub scanning direction. A reflection control part extending along a movement range of the movable part is fixed to the housing near the movable part. The reflection control part has first reflection parts having a relatively large reflectance and second reflection parts having a relatively small reflectance arranged along the movement range. A detection light irradiation part provided in the movable part irradiates the reflection control part with detection light. A detection light reception part receives the detection light reflected by the reflection control part. A signal generating part generates a binary signal corresponding to the detection light received by the detection light reception part. A movement deciding part decides movement state of the movable part according to the binary signal generated by the signal generating part. | 03-06-2014 |
20140112673 | FULLNESS DETECTION DEVICE, IMAGE FORMING APPARATUS, AND METHOD FOR CONTROLLING FULLNESS DETECTION DEVICE - A fullness detection device includes a waste toner collecting portion, a waste toner container configured to store the collected waste toner, the waste toner container has translucency, a detecting portion including a light emitting portion and a light receiving portion disposed to sandwich the waste toner container, the light receiving portion receiving the light from the light emitting portion, and a determining portion configured to determine whether or not the waste toner container is full based on whether or not an output value of the light receiving portion is higher than a predetermined threshold value. The light emitting portion increases light intensity step by step and emits light at a level of smallest light intensity among light intensity levels at which it is determined that the waste toner container is not full. | 04-24-2014 |
20140211272 | IMAGE READING DEVICE AND IMAGE FORMING APPARATUS - An image reading device includes a light source, an imaging section, and a controller. The light source includes a plurality of light emitting elements. The light source irradiates light to an original document, while moving relative to the original document. The imaging section obtains scan data read from the original document by light irradiated to the original document from the light source. The controller controls the light source and the imaging section. The controller determines a read target region and a non-read target region in the original document, turns on a light emitting element out of the plurality of light emitting elements, which corresponds to the read target region, and turns off a light emitting element out of the plurality of light emitting elements, which corresponds to the non-read target region. | 07-31-2014 |
20140240796 | Abnormal Reflected Light Resistant Image Reading - An image reading apparatus includes a light emitting diode (LED), a carriage, light receiving elements, a clamp circuit, an A/D convertor, and an image correction unit. The image correction unit is configured to: detect a document area where the reflected light is abnormal by comparing first image data with second image data; and replace the first image data corresponding to the abnormal document area with third image data. The first image data is generated by movement of the carriage in a sub-scanning direction of a first direction. The second image data is generated by movement of the carriage in the sub-scanning direction of a second direction at a reduced luminescence level of the capturing light illuminated on the document compared with a luminescence level in the movement of the carriage in the first direction. The third image data is the second image data where at least brightness is adjusted. | 08-28-2014 |
20150212455 | IMAGE FORMING APPARATUS AND IMAGE FORMING METHOD - The forced light emission detection unit detects a forced laser beam emission state of an exposing unit when the exposing unit starts forming a latent image on a photosensitive drum. The toner transfer control unit performs the developing of the electrostatic latent image formed at a position before the electrostatic latent image on which the forced laser beam emission state is detected, and transfers the developed toner image to a sheet. The sheet re-conveyance unit makes the sheet being in a re-conveyance state using a duplex printing conveyance path. The toner re-transfer control unit reforms the electrostatic latent image formed after the position on which the force laser beam emission state is detected, performs the developing of the electrostatic latent image, and transfers the developed toner image to the sheet in the re-conveyance state. | 07-30-2015 |
Patent application number | Description | Published |
20120153388 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which a reliable high voltage p-channel transistor is formed without an increase in cost and the number of manufacturing steps. The transistor includes: a semiconductor substrate having a main surface and a p-type region therein; a p-type well region located over the p-type region and in the main surface, having a first p-type impurity region to obtain a drain electrode; an n-type well region adjoining the p-type well region along the main surface and having a second p-type impurity region to obtain a source electrode; a gate electrode between the first and second p-type impurity regions along the main surface; and a p-type buried channel overlying the n-type well region and extending along the main surface. The border between the n-type and p-type well regions is nearer to the first p-type impurity region than the gate electrode end near to the first p-type impurity region. | 06-21-2012 |
20130234258 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - Provided are a semiconductor device having a high breakdown voltage and attaining the restraint of the action of a parasite bipolar transistor, and a method for producing the device. A high-breakdown-voltage p-channel-type transistor included in the semiconductor device has a first n-type semiconductor layer arranged in a semiconductor substrate and at a main-surface-side (upside) of a p-type region in the semiconductor substrate, and a local n-type buried region arranged just below a first p-type dopant region to contact the first n-type semiconductor layer. | 09-12-2013 |
20130277738 | SEMICONDUCTOR DEVICE - A semiconductor device is provided, in which work of a parasitic bipolar transistor can be suppressed and a potential difference can be provided between a source region and a back gate region. A high voltage tolerant transistor formed over a semiconductor substrate includes: a well region of a first conductivity type; a first impurity region as the source region; and a second impurity region as a drain region. The semiconductor device further includes a third impurity region and a gate electrode for isolation. The third impurity region is formed, in planar view, between a pair of the first impurity regions, and from which a potential of the well region is extracted. The gate electrode for isolation is formed over the main surface between the first impurity region and the third impurity region. | 10-24-2013 |
20150325486 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - Provided are a semiconductor device having a high breakdown voltage and attaining the restraint of the action of a parasite bipolar transistor, and a method for producing the device. A high-breakdown-voltage p-channel-type transistor included in the semiconductor device has a first n-type semiconductor layer arranged in a semiconductor substrate and at a main-surface-side (upside) of a p-type region in the semiconductor substrate, and a local n-type buried region arranged just below a first p-type dopant region to contact the first n-type semiconductor layer. | 11-12-2015 |
20150340287 | SEMICONDUCTOR DEVICE INCLUDING A HIGH VOLTAGE P-CHANNEL TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which a reliable high voltage p-channel transistor is formed without an increase in cost and the number of manufacturing steps. The transistor includes: a semiconductor substrate having a main surface and a p-type region therein; a p-type well region located over the p-type region and in the main surface, having a first p-type impurity region to obtain a drain electrode; an n-type well region adjoining the p-type well region along the main surface and having a second p-type impurity region to obtain a source electrode; a gate electrode between the first and second p-type impurity regions along the main surface; and a p-type buried channel overlying the n-type well region and extending along the main surface. The border between the n-type and p-type well regions is nearer to the first p-type impurity region than the gate electrode end near to the first p-type impurity region. | 11-26-2015 |
Patent application number | Description | Published |
20090081843 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film ( | 03-26-2009 |
20090253235 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 10-08-2009 |
20110207312 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film ( | 08-25-2011 |
20110275185 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 11-10-2011 |
20130130457 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced. | 05-23-2013 |
20130203223 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 08-08-2013 |
20130330890 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 12-12-2013 |
20140024194 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced. | 01-23-2014 |
20140113418 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 04-24-2014 |
20140322878 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced. | 10-30-2014 |
20140377920 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 12-25-2014 |
20150194428 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 07-09-2015 |
20160056254 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH OFFSET SIDEWALL STRUCTURE - A method of manufacturing a semiconductor device with NMOS and PMOS transistors is provided. The semiconductor device can lessen a short channel effect, can reduce gate-drain current leakage, and can reduce parasitic capacitance due to gate overlaps, thereby inhibiting a reduction in the operating speed of circuits. An N-type impurity such as arsenic is ion implanted to a relatively low concentration in the surface of a silicon substrate ( | 02-25-2016 |
20160056289 | SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF MANUFACTURING THE SAME - A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate electrode as a mask, n-type dopants having a relatively large mass number (70 or more) such as As ions or Sb ions are implanted, to form a source/drain region of the nMOS transistor, whereby the gate electrode is amorphized. Subsequently, a silicon oxide film is provided to cover the gate electrode, at a temperature which is less than the one at which recrystallization of the gate electrode occurs. Thereafter, thermal processing is performed at a temperature of about 1000° C., whereby high compressive residual stress is exerted on the gate electrode, and high tensile stress is applied to a channel region under the gate electrode. As a result, carrier mobility of the nMOS transistor is enhanced. | 02-25-2016 |
Patent application number | Description | Published |
20140061283 | FRICTION STIR WELDING APPARATUS - A friction stir welding apparatus includes a displacement detecting device that detects displacement of a welding tool caused by deformation of a fitting jig, at the time of performing friction stir welding in which an arm to which the fitting jig fitted with the welding tool is fixed is moved to move the welding tool with respect to the processing target member. The fitting jig can be deformed more than the arm at the time of performing friction stir welding. The displacement detecting device has a displacement sensor fixed to the welding tool, and a reference member fixed to a fixing portion between the fitting jig and the arm to provide a reference position for detecting the displacement to the displacement sensor. | 03-06-2014 |
20140076957 | FRICTION-STIR JOINING METHOD - Disclosed is a friction-stir joining method for joining a first member, having a base metal covered with a substance different from the base metal, with a second member with the second member placed on the first member by moving a joining tool along a joining line having thereon a joining start point and a joining finish point. The method includes steps of inserting the joining tool into the second member at the joining start point; moving the joining tool a predetermined distance along the joining line in a direction opposite the joining finish point; causing the joining tool to turn back at a turning-back point spaced the predetermined distance from the joining start point; moving the joining tool along the joining line to the joining finish point past the joining start point; and pulling the joining tool out from the second member at the joining finish point. | 03-20-2014 |
20140080690 | PROCESSING APPARATUS - A replacement device of a processing apparatus includes a gripping device having a single first support member positionally fixed, a first gripping portion provided on the first support member to grip a holder not to rotate in a releasing direction when the processing member is removed from the holder, and a second gripping portion provided on the first support member apart from the first gripping portion to grip the holder not to rotate in a restricting direction when the processing member is attached to the holder, and a holding device having a single movable second support member, plural first holding portions provided on the second support member to respectively accommodate the processing member removed from the holder, and plural second holding portions provided on the second support member apart from the first holding portions to respectively accommodate the processing member that is to be attached to the holder. | 03-20-2014 |
20140183245 | FRICTION STIR WELDING APPARATUS - A friction stir welding apparatus having a new cooling system that can cool a portion required to be cooled accurately and uniformly with a simple configuration, while suppressing unnecessary thermal expansion of a mounting jig includes a holding mechanism | 07-03-2014 |
20140183246 | FRICTION STIR WELDING APPARATUS - In a friction stir welding apparatus that can control a penetrating position of a probe with respect to a processing target member to an optimum position at a time of friction stir welding by detecting a wear volume and a tip position of the probe, as a drive mechanism moves down a holder having a coefficient of thermal expansion larger than that of the probe and holding the probe, a detector can freely detect a length of a member including the holder and the probe, and a probe detection mechanism can freely detect a tip length, which is the length of the member of only the probe. | 07-03-2014 |
20140217151 | FRICTION STIR WELDING TOOL - Disclosed is a friction stir welding tool ( | 08-07-2014 |
20140248510 | DISSIMILAR-MATERIAL WELDED STRUCTURE AND WELDING METHOD THEREFOR - Friction stir welding is performed in the following manner. In the state in which a probe is rotated in a predetermined rotation direction, the probe is inserted into a flange of a rear sub frame, thereby starting friction stir welding to weld the flange of the rear sub frame and a flange of a front sub frame positioned on the inner side of the rear side of a vehicle. The probe is sequentially moved along the direction of arrow R1→arrow R2 (predetermined direction). When the probe reaches the end point of the direction indicated by arrow R2, the probe is inserted into the flange on the outer side across a protruding portion disposed between the flanges. Then, the probe is sequentially moved in the direction of arrow R4→arrow R5→arrow R6, which is opposite to the direction of arrow R1→arrow R2. | 09-04-2014 |
Patent application number | Description | Published |
20130222477 | INK JET RECORDING APPARATUS - There is provided an ink jet recording apparatus including: first cleaning which performs non-recording ejection of ink for ink jet recording to an ink receiving medium and cleans a nozzle and a nozzle surface of a print head; second cleaning which moves the print head to the ink receiving medium, performs non-recording ejection of the ink for ink jet recording from the print head to the ink receiving medium under a condition that the amount of the ink for ink jet recording is smaller than an amount of the ink ejected in the non-recording ejection by the first cleaning and an execution frequency is higher than that in the first cleaning, and cleans the nozzle of the print head; and a wiping mechanism which wipes the nozzle surface by using a wiping member. | 08-29-2013 |
20130265355 | PRINTING APPARATUS AND PRINTING METHOD - A printing apparatus includes a head having a nozzle ejecting an ink having thermoplastic resin particles and a viscosity of 2.1 mPa·s or more at 50° C., a pressure chamber, and a drive element; a medium having ink-unabsorbable characteristics and a length of | 10-10-2013 |
20130328954 | PRINTING APPARATUS AND PRINTING METHOD - A printing apparatus includes a head having a nozzle through which ink that contains thermoplastic resin particles and whose viscosity at 50° C. is equal to or greater than 2.1 mPa·s is discharged, a pressure chamber, and a driving element; an ink non-absorptive medium; a heating unit; and a control unit that applies driving signals to the driving element. In the printing apparatus, a discharge waveform generated by the driving signal includes a first expansion-element that expands the pressure chamber, a contraction-element that contracts the pressure chamber having been expanded by the first expansion-element, a second expansion-element that expands the pressure chamber having been contracted by the contraction-element, a third expansion-element that further expands the pressure chamber having been expanded by the second-expansion element, and a connection-element that connects an end terminal of the second expansion-element with a start terminal of the third expansion-element at the same potential. | 12-12-2013 |
20140085365 | PRINTING APPARATUS AND PRINTING METHOD - A printing apparatus, has a head having a plurality of nozzles for discharging an ink containing thermoplastic resin particles and having a viscosity at 50° C. of 2.1 mPa·s or more to a non-ink-absorbing medium and a drive element provided in each of the nozzles, a heating portion which heats the medium, and a control portion which drives the drive elements by applying a drive waveform to discharge ink droplets from the nozzles corresponding to the drive elements, in which a first ink droplet is discharged from the nozzle by the application of the drive waveform to the drive element, and the discharge speed of an ink droplet whose discharge speed is lower of a second ink droplet and a third ink droplet discharged accompanying the first ink droplet is 4.0 m/s or more. | 03-27-2014 |
20150251444 | PRINTING DEVICE, CONTROL METHOD FOR PRINTING DEVICE, AND CONTROL PROGRAM FOR PRINTING DEVICE - A printing device includes a paper medium print mode configured to execute printing on a paper medium; and a textile print mode configured to execute printing on a fabric medium, a print speed in the textile print mode being slower than a print speed in the paper medium print mode. | 09-10-2015 |
20150251445 | PRINTING DEVICE, CONTROL METHOD FOR PRINTING DEVICE, AND CONTROL PROGRAM FOR PRINTING DEVICE - A printing device includes a paper medium print mode configured to execute printing on a paper medium; and a textile print mode configured to execute printing on a fabric medium, types of inks used in the textile print mode being greater in number than types of inks used in the paper medium print mode. | 09-10-2015 |
20150251446 | PRINTING DEVICE, CONTROL METHOD FOR PRINTING DEVICE, AND CONTROL PROGRAM FOR PRINTING DEVICE - A printing device includes a paper medium print mode configured to execute printing on a paper medium; and a textile print mode configured to execute printing on a fabric medium, a print resolution in the textile print mode being lower than a print resolution in the paper medium print mode. | 09-10-2015 |
20150251447 | PRINTING DEVICE, CONTROL METHOD FOR PRINTING DEVICE, AND CONTROL PROGRAM FOR PRINTING DEVICE - A printing device includes a paper medium print mode configured to execute printing on a paper medium; and a textile print mode configured to execute printing on a fabric medium, an ink weight required for forming a maximum dot in the textile print mode being less than an ink weight required for forming a maximum dot in the paper medium print mode. | 09-10-2015 |
Patent application number | Description | Published |
20090027440 | LIQUID EJECTING APPARATUS - A controller of a liquid ejecting apparatus forms first inspection patterns on a medium in a head moving direction while moving a liquid ejecting head in a forward direction. Corresponding second inspection patterns are formed on the medium in the head moving direction while moving the liquid ejecting head in a backward direction. When forming the patterns, the controller sets a voltage of a drive pulse corresponding to a preferable combination of the first and second inspection patterns, as a normally-used voltage used for normal forming. The controller differentiates the voltages of the drive pulses used for forming the inspection pattern for every combination of the first and second inspection patterns. The second inspection patterns correspond to the first inspection patterns at timings when positions of the second inspection patterns in the head moving direction are theoretically aligned with the positions of the first inspection patterns. | 01-29-2009 |
20090066741 | LIQUID DISCHARGING APPARATUS AND METHOD OF CONTROLLING THE SAME - A liquid discharging apparatus includes a discharging device, a liquid receiving device, a voltage applying device, an electrical change detection device, a driving signal generating device, and a control device. The discharging device discharges liquid from a nozzle to a target on the basis of discharge data. At the time of discharging, the control device controls the discharging device so as to perform discharging on the basis of the discharge data using a generated discharge data driving signal. At the time of the nozzle testing, the control device controls the voltage applying device so as to apply a predetermined voltage between the discharging device and the liquid receiving device and controls the discharging device using a test driving signal to determine on the basis of an electrical change detected by the electrical change detection device whether the liquid is discharged to thereby perform the nozzle testing. | 03-12-2009 |
20090073208 | LIQUID DISCHARGING APPARATUS, METHOD OF CONTROLLING THE SAME, AND PROGRAM THAT IMPLEMENTS THE METHOD - A liquid discharging apparatus includes a discharging device, a liquid receiving device, a voltage applying device, and a control device. The discharging discharges liquid from a nozzle to a target on the basis of discharge data, where it is received by a liquid receiving device. The voltage applying device applies a predetermined voltage between the discharging device and the liquid receiving device. When discharging on the basis of the discharge data, the control device controls the discharging device to discharge using a generated discharge data driving signal. When performing nozzle testing, the control device controls the voltage applying device to apply the predetermined voltage between the discharging device and the liquid receiving device and controls the discharging device using a generated test driving signal to discharge liquid from the nozzle to determine on the basis of a detected electrical change whether liquid is discharged from the nozzle. | 03-19-2009 |
20100079535 | INSPECTION DEVICE FOR LIQUID EJECTING HEAD - Provided is an inspection device for a liquid ejecting head including: a first vibration plate which is positioned at a position opposite to the nozzle openings of the liquid ejecting head for ejecting a liquid from the nozzle openings such that the liquid ejected from the nozzle openings of the liquid ejecting head lands thereon; a first piezoelectric element bonded to the first vibration plate; and a detecting unit which is connected to the first piezoelectric element so as to detect an electrical variation in the first piezoelectric element, wherein the detecting unit inspects the ejection state of the nozzle openings based on a voltage variation in the first piezoelectric element by the liquid landing onto the first vibration plate. | 04-01-2010 |
20100103210 | LIQUID DISCHARGING APPARATUS - A liquid discharging apparatus includes a liquid discharging head that has nozzle groups each having a plurality of nozzles. The liquid discharging head discharges liquid from the nozzles through the operation of pressure generation elements. A first driving signal generating section generates, in a generation cycle, a first driving signal that includes a discharging pulse for discharging liquid by driving the pressure generation elements. A second driving signal generating section generates, in the generation cycle, a second driving signal that includes the discharging pulse. A controlling section selects a discharging pulse included in the first driving signal or the second driving signal based on discharging control information for controlling the discharging of the liquid and supplies the selected discharging pulse to the pressure generation elements to control the discharging of the liquid. The controlling section makes discharging-pulse selection for each nozzle group. | 04-29-2010 |
20100128074 | PRINTING APPARATUS - A printing apparatus includes: a white-colored ink nozzle which ejects white-colored ink; a colored ink nozzle which ejects colored ink different from the white-colored ink; a scanning mechanism which moves the nozzles and a print medium, onto which the ejected ink is landed, relative to each other; and a controller which controls the ink ejection of the nozzles and the scanning mechanism. The controller forms a color line by ejecting the colored ink onto the print medium, while relatively moving the nozzle with respect to the print medium in a first direction, and then the controller ejects the white-colored ink on the color line so as to draw white lines intersecting the color line by moving the nozzle and the print medium relative to each other in a second direction intersecting the first direction. | 05-27-2010 |
20120086755 | LIQUID EJECTING APPARATUS AND CONTROL METHOD THEREFOR - A first activation signal has ejection activation pulses that eject ink from nozzles; a second activation signal has a micro-oscillating activation pulse (non-ejection activation pulse) for inducing pressure fluctuation on ink within the pressure chamber of a level such that liquid is not ejected from the nozzle; a minimum electric potential of the micro-oscillating activation pulse is no greater than a maximum electric potential of the ejection activation pulse; and the ejection activation pulse is supplied to a piezoelectric element corresponding to an ejecting nozzle ejecting ink in a unit cycle, and the micro-oscillating activation pulse is at least supplied to a piezoelectric element corresponding to a non-ejecting nozzle located adjacent to the ejecting nozzle. | 04-12-2012 |
20130027453 | LIQUID EJECTING APPARATUS AND METHOD OF CONTROLLING LIQUID EJECTING APPARATUS - A CPU serving as a counting unit counts the cumulative number of times a driving pulse is applied to a piezoelectric vibrator. A driving signal generation unit is able to generate an aging driving pulse set by a driving parameter to the extent that ink is not ejected from a nozzle and performs an aging process of driving the piezoelectric vibrator using the aging driving pulse set by a driving parameter in accordance with a cumulative number of applications in a region outside an ejection region on a recording medium. | 01-31-2013 |
20130038664 | INK COMPOSITION, RECORDING UNIT AND INK JET RECORDING APPARATUS USING THE SAME, AND RECORDED MATERIAL - An aspect of the invention provides an ink composition ejected from a nozzle having a step, the ink composition containing at least any one of a first water-soluble organic solvent and a second water-soluble organic solvent, wherein the first water-soluble organic solvent exhibits a surface tension of 30 mN/m or lower at 20° C., an aqueous solution of the second water-soluble organic solvent of 10 mass % exhibits a surface tension of 50 mN/m or lower at 20° C., and the total content of the first water-soluble organic solvent and the second water-soluble organic solvent is 0.15 mass % or higher. | 02-14-2013 |
20130249998 | MAINTENANCE DEVICE AND LIQUID EJECTING APPARATUS - A maintenance device includes a liquid absorption body which absorbs a liquid which is attached to a nozzle forming surface by abutting the nozzle forming surface of a liquid ejecting head in which a plurality of nozzle rows configured of a plurality of nozzles ejecting the liquid are provided in parallel, wherein the liquid absorption body has a penetration suppressing section which suppresses the spread of the liquid due to penetration of the liquid absorbed from the nozzle forming surface of the liquid ejecting head, and wherein the penetration suppressing section is disposed between the nozzle rows ejecting the liquids of different colors from each other in a direction intersecting the nozzle row direction, in a case where the liquid absorption body abuts the nozzle forming surface of the liquid ejecting head. | 09-26-2013 |
20140118432 | LIQUID EJECTING APPARATUS AND CONTROL METHOD THEREFOR - A slight oscillation waveform includes a first variation element that varies up to a first electric potential of a first polarity relative to a reference electric potential and thereby causes liquid contained in the pressure chamber to be subjected to a pressure variation, a second variation element which varies up to a second electric potential of a second polarity, which is different from the first polarity, relative to the reference electric potential and thereby causes liquid contained in the pressure chamber to be subjected to a pressure variation, a third variation element which varies up to a third electric potential of the first electric potential and thereby causes liquid contained in the pressure chamber to be subjected to a pressure variation, and a fourth variation element which varies up to the reference electric potential and thereby causes liquid contained in the pressure chamber to be subjected to a pressure variation. | 05-01-2014 |
20140168299 | LIQUID EJECTING APPARATUS AND CONTROLLING METHOD THEREOF - A minute vibration driving signal is configured to include a first signal section which generates a plurality of minute vibration driving pulses, and a second signal section which maintains potential to a constant level without generating the minute vibration driving pulse, and can select a first mode in which duration of the second signal section is set to T2 which is longer than duration T1 of the first signal section, and a second mode in which duration of the second signal section is set to T4 which is longer than T2. | 06-19-2014 |
20140198156 | LIQUID EJECTING APPARATUS AND MAINTENANCE METHOD - A liquid ejecting apparatus includes a liquid ejecting head that ejects a liquid from a nozzle toward a target which is positioned away from a nozzle forming surface where the nozzle is formed; a wiping member that is capable of wiping the nozzle forming surface; a movement mechanism that relatively moves the liquid ejecting head and the wiping member when wiping is carried out; and a control portion that controls the movement mechanism so as to cause a relative moving velocity between the liquid ejecting head and the wiping member to be lower when wiping is carried out in a case where the liquid is ejected at a second distance of which an opposing distance between the nozzle forming surface and the target is longer than a first distance compared to a case where the liquid is ejected at the first distance of the opposing distance. | 07-17-2014 |
20140247305 | INK JET RECORDING APPARATUS - An ink jet recording apparatus has a first discharge port array in which discharge ports of a plurality of nozzles which discharge an ink composition containing an inorganic pigment are disposed side by side, a second discharge port array in which discharge ports of a plurality of nozzles which discharge an ink composition containing a coloring material other than the inorganic pigment are disposed side by side, a nozzle plate having the first discharge port array and the second discharge port array, a liquid repellent film provided on the nozzle plate, a wiping member which wipes the surface of the nozzle plate and has absorbability of the ink composition, in which, in a series of operations in which the surface of the nozzle plate is wiped by the wiping member, the second discharge port array is wiped in priority to the first discharge port array. | 09-04-2014 |
20140375720 | LIQUID EJECTING APPARATUS - A liquid ejecting apparatus has a liquid ejecting head capable of ejecting an ink containing thermoplastic resin particles from nozzles to a landing target and a heating unit of heating ink droplets landing on the landing target, in which the heating unit heats the ink droplets at a filming control temperature according to the minimum film forming temperature at which the filming of the surface of the ink droplets starts to thereby control the filming degree of the surface of the ink droplets. | 12-25-2014 |
20150321478 | LIQUID EJECTING APPARATUS AND MAINTENANCE METHOD - A liquid ejecting apparatus includes a liquid ejecting head that ejects a liquid from a nozzle toward a target which is positioned away from a nozzle forming surface where the nozzle is formed; a wiping member that is capable of wiping the nozzle forming surface; a movement mechanism that relatively moves the liquid ejecting head and the wiping member when wiping is carried out; and a control portion that controls the movement mechanism so as to cause a relative moving velocity between the liquid ejecting head and the wiping member to be lower when wiping is carried out in a case where the liquid is ejected at a second distance of which an opposing distance between the nozzle forming surface and the target is longer than a first distance compared to a case where the liquid is ejected at the first distance of the opposing distance. | 11-12-2015 |
Patent application number | Description | Published |
20090085111 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device and a method of manufacturing a semiconductor device. In the semiconductor device, high-concentration n type impurity regions are formed respectively below gate electrodes. By setting a gate length to be smaller than a depth of channel regions, pn junction interfaces formed of adjacent side faces of the n type impurity regions and the channel regions can be substantially vertical to a top surface of a base. With this configuration, even when reduction in size is achieved in a super junction structure, a distance between the channel regions (i.e. a current path below the gate electrode) is not reduced unnecessarily. Accordingly, an increase in resistance can be prevented. In addition, depletion layers uniformly expand in the n type semiconductor regions, and impurity concentration of the regions can be increased consequently. Accordingly, reduction in resistance can be achieved. | 04-02-2009 |
20090085149 | SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING THE SAME - Provided is a semiconductor wafer. In the semiconductor wafer, formation and etching of an n type epitaxial layer and formation and etching of a p type epitaxial layer are alternately performed for at least three times, so that all semiconductor layers are formed of epitaxial layers on a semiconductor substrate. Thereby, the respective semiconductor layers can be formed to have reduced widths. Thus, if a required breakdown voltage is the same, dopant concentrations of the respective semiconductor layers can be increased and a resistance value of the wafer can be reduced. In addition, a space portion remaining in the end is buried with an insulating layer, so that a defect can be avoided in a junction surface of the epitaxial layers. | 04-02-2009 |
20090096030 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which an insulating region surrounding an element region is provided in an end portion of a semiconductor region with a super junction structure. Since a depletion layer in the element region ends in the insulating region, the end portion of the element region is not formed in a curved surface shape. In other words, the depletion layer has no curved surface in which internal electric fields are concentrated. For this reason, there is no need to take a measure to cause the depletion layer to spread in a horizontal direction by proving a terminal region. Since the terminal region is unnecessary, a chip size can be reduced. Alternatively, an area of the element region can be expanded. | 04-16-2009 |
Patent application number | Description | Published |
20100289100 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film. | 11-18-2010 |
20100289939 | SOLID-STATE IMAGE CAPTURE DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS - A solid-state image capture device includes: at least one photoelectric converter provided at an image capture surface of a substrate to receive incident light at a light-receiving surface of the photoelectric converter and photoelectrically convert the incident light to thereby generate signal charge; at least one on-chip lens provided at the image capture surface of the substrate and above the light-receiving surface of the photoelectric converter to focus the incident light onto the light-receiving surface; and an antireflection layer provided on an upper surface of the on-chip lens at the image capture surface of the substrate. The antireflection layer contains a binder resin having a lower refractive index than the on-chip lens and low-refractive-index particles having a lower refractive index than the binder resin. | 11-18-2010 |
20100301438 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion. | 12-02-2010 |
20120258563 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING THE SAME AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including: a trench formed in an insulating film above a light-receiving portion; a first waveguide core portion provided on an inner wall side of the trench; a second waveguide core portion filled in the trench via the first waveguide core portion; and a rectangular lens formed of the same material as that of the second waveguide core portion and provided integrally with the second waveguide core portion. | 10-11-2012 |
20130128095 | SOLID-STATE IMAGE CAPTURE DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS - A solid-state image capture device including: at least one photoelectric converter at an image capture surface of a substrate; at least one on-chip lens at the image capture surface of the substrate and above a light-receiving surface of the photoelectric converter; and an antireflection layer on an upper surface of the on-chip lens. The antireflection layer contains a binder resin having a lower refractive index than that of the on-chip lens and low-refractive-index particles having a lower refractive index than that of the binder resin. | 05-23-2013 |
20130235230 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film. | 09-12-2013 |
Patent application number | Description | Published |
20130134537 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREFOR, ELECTRONIC APPARATUS, AND COMPOSITION FOR SOLID-STATE IMAGING DEVICE - Disclosed herein is a solid-state imaging device including a plurality of pixels arranged two-dimensionally, wherein the pixels each have at least a planarizing film formed on the upper side of a photoelectric conversion element, a filter formed on the upper side of the planarizing film, and a microlens formed on the upper side of the filter. The filters of a part of the pixels are each a color filter permitting transmission therethrough of light of a predetermined color component, whereas the filters of another part of the pixels are each a white filter permitting transmission therethrough of light in the whole visible spectral range. The refractive indices of the white filter, the microlens and the planarizing film are in the following relationship: (Refractive index of white filter)≧(Refractive index of microlens)>(Refractive index of planarizing film). | 05-30-2013 |
20150035105 | IMAGE PICKUP ELEMENT, IMAGING APPARATUS, MANUFACTURING APPARATUS FOR IMAGE PICKUP ELEMENT, AND MANUFACTURING METHOD FOR IMAGE PICKUP ELEMENT - Provided is an image pickup element, including: condenser lenses made of a resin containing fine metal particles; photoelectric conversion elements formed in a silicon substrate and each configured to photoelectrically convert incident light that enter from an outside through corresponding one of the condenser lenses; and a protective film made of a silicon compound, the protective film being formed between the condenser lenses and the silicon substrate. | 02-05-2015 |
20150098007 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS - There is provided a solid-state imaging device which includes a plurality of pixels including an imaging pixel for generating a captured image and a focus detection pixel for detecting a focus, in which the focus detection pixel includes a microlens, a photoelectric conversion unit which receives light incident from the microlens, a light-shielding unit which shields a portion of light incident on the photoelectric conversion unit, and a dimming filter which dims the light incident on the photoelectric conversion unit and is formed to contain a black pigment. The present technology can be applied to, for example, a CMOS image sensor. | 04-09-2015 |