Patent application number | Description | Published |
20090075450 | Method of manufacturing stack-type capacitor and semiconductor memory device having the stack-type capacitor - A stack-type capacitor includes a lower electrode, a dielectric layer formed on the lower electrode, and an upper electrode formed on the dielectric layer, wherein the lower electrode includes a first metal layer having a cylindrical shape and a second metal layer filled in the first metal layer. In the capacitor, an amount of oxygen included in the lower electrode is decreased to suppress oxidation of a TiN layer. Thus, a stable stack-type capacitor may be formed, which increases greatly the performance of highly integrated DRAMs. | 03-19-2009 |
20090194764 | Multi-layer storage node, resistive random access memory device including a multi-layer storage node and methods of manufacturing the same - A multi-layer storage node, resistive random access memory device and methods of manufacturing the same are provided. The resistive random access memory device includes a switching structure and a storage node connected to the switching structure. The storage node includes a lower electrode, a first layer, a second layer, and an upper electrode that may be sequentially stacked. The first layer may be formed on the lower electrode and includes at least one of oxygen (O), sulfur (S), selenium (Se), tellurium (Te) and combinations thereof. The second layer may be formed on the first layer and includes at least one of copper (Cu), silver (Ag) and combinations thereof. The second layer may be formed of a material having an oxidizing power less than that of the first layer. The upper electrode may be formed on the second layer. | 08-06-2009 |
20100092679 | Material layer forming apparatus using supercritical fluid, material layer forming system comprising the same and method of forming material layer - Provided are a material layer forming apparatus using a supercritical fluid, a material layer forming system including the apparatus, and a method of forming a material layer using the system. The material layer forming system may include a high pressure pump supplying a supercritical fluid to a precursor storage container and the material layer forming apparatus, and maintaining the internal pressure of the precursor storage container, a reactant material storage container at a pressure such that the supercritical fluid is in a supercritical state, and a material layer forming apparatus. The material layer forming system may further include a pressure gauge adjusting the pressure of the material layer forming apparatus. The precursor of the precursor storage container may be supplied to the material layer forming apparatus using the supercritical fluid. | 04-15-2010 |
20100110346 | Methods of polarizing transparent conductive oxides, electronic devices including polarized transparent conductive oxides, and methods of manufacturing the electronic devices - Provided are methods of polarizing a transparent conductive oxide (TCO), electronic devices including a polarized TCO, and methods of manufacturing the electronic devices. A transparent conductive oxide formed on a substrate is polarized by electron beam annealing the transparent conductive oxide until a polarization voltage is generated in the transparent conductive oxide. The transparent conductive oxide may be a ZnO film or AlZnO film, where A is a cation. The electron beam annealing may be performed at about room temperature for less than about 60 minutes. | 05-06-2010 |
20100144129 | Method of manufacturing crystalline silicon - Disclosed is a method of manufacturing crystalline Si by using plasma. According to the disclosed method, silicon (Si) deposition and reduction processes using plasma are cyclically performed in order to completely remove an a-Si layer so as to form crystalline Si on a substrate early in the process. | 06-10-2010 |
20100147807 | Electron beam annealing apparatuses and annealing methods using the same - Electron beam annealing apparatuses for annealing a thin layer on a substrate and annealing methods using the apparatuses are provided. The electron beam annealing apparatuses may include an electron beam scanning unit that may scan a pulsed electron beam onto a substrate. | 06-17-2010 |
20100151617 | Method of growing silicon and method of manufacturing solar cell using the same - In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growing silicon (Si). The supercritical fluid may be a fluid in which Si is not oxidized and may be, for example, a CO | 06-17-2010 |
20100155826 | Non-volatile memory device and method of fabricating the same - Provided are a non-volatile memory device and a method of fabricating the same. The non-volatile memory device may include a substrate and a plurality of semiconductor pillars on the substrate. A plurality of control gate electrodes may be stacked on the substrate and intersecting the plurality of semiconductor pillars. A plurality of dummy electrodes may be stacked adjacent to the plurality of control gate electrodes on the substrate, the plurality of dummy electrodes being spaced apart from the plurality of control gate electrodes. A plurality of via plugs may be connected to the plurality of control gate electrodes. A plurality of wordlines may be on the plurality of via plugs. Each of the plurality of via plugs may penetrate a corresponding one of the plurality of control gate electrodes and at least one of the plurality of dummy electrodes. | 06-24-2010 |
20100200908 | Nonvolatile memory device and method of fabricating the same - Provided are a nonvolatile memory device having a vertical folding structure and a method of manufacturing the nonvolatile memory device. A semiconductor structure includes first and second portions that are substantially vertical. A plurality of memory cells are arranged along the first and second portions of the semiconductor structure and are serially connected. | 08-12-2010 |
20100255219 | Methods of preparing a graphene sheet - Methods of preparing a carbon-based sheet are provided, the methods include aligning carbon-containing materials on a substrate and forming the carbon-based sheet on the substrate by performing an annealing process on the substrate including the carbon-containing materials. The carbon-based sheet may be a graphene sheet. | 10-07-2010 |
20100304043 | Method of manufacturing silicon film by using silicon solution process - Provided may be a method of manufacturing a silicon (Si) film by using a Si solution process. According to the method of manufacturing the Si film, the Si film may be manufactured by preparing a Si forming solution. The ultraviolet rays (UV) may be irradiated on the prepared Si forming solution. The Si forming solution may be coated on a substrate and a solvent in the Si forming solution may be coated on the substrate. An electron beam may be irradiated on the Si forming solution from which the solvent is removed. | 12-02-2010 |
20100307588 | Solar cell structures - Solar cell structures including an n-type semiconductor layer, an i-type semiconductor layer on the n-type semiconductor layer, and a p-type semiconductor layer on the i-type semiconductor layer. The n-type semiconductor layer and the p-type semiconductor layer each respectively contacts a transparent conductive layer having a transparent conductive material. | 12-09-2010 |
20110100448 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A solar cell including: a semiconductor substrate including a p-type layer and an n-type layer; a dielectric layer disposed on the semiconductor substrate and including a silicate represented by the following Chemical Formula 1 | 05-05-2011 |
20110100450 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A method of manufacturing a solar cell includes providing a semiconductor substrate including a p-type layer and an n-type layer. A dielectric layer including aluminum oxynitride is disposed on one side of the semiconductor substrate. A first electrode is in electrical communication with the p-type layer of the semiconductor substrate. A second electrode is in electrical communication with the n-type layer of the semiconductor substrate. The disposing the dielectric layer comprises repeatedly forming an aluminum nitride layer and substituting a part of nitrogen of the aluminum nitride layer with oxygen. | 05-05-2011 |
20110162698 | Solar cells using nanowires and methods of manufacturing the same - Solar cells and methods of manufacturing the same, the solar cells include a plurality of nanowire heterostructures, wherein each of the plurality of nanowire heterostructures includes a nanowire including at least one p-type nanowire layer and at least one n-type nanowire layer, and a semiconductor material layer disposed on the nanowire. The semiconductor material layer constitutes a p-n junction with the p-type or n-type nanowire layer. The semiconductor material layer includes at least one of the p-type material layer and the n-type material layer. | 07-07-2011 |
20110204461 | Stack-type image sensor - Example embodiments are directed to a stack-type image sensor including resistance change elements. The stack-type image sensor includes at least two light-sensing layers that detect different color light stacked on different layers. The stack-type image sensor may not require a size of a unit pixel that detects a light color to be less than 1 μm in order to generate a high resolution color image. As such, resolution saturation may be avoided. | 08-25-2011 |
20110290309 | Solar Cell and Method for Manufacturing the Same - Disclosed is a solar cell and a method for manufacturing the same, which facilitates to improve cell efficiency by smoothly drifting carrier such as hole or electron generated in a semiconductor wafer to first and second electrodes, the solar cell comprising a semiconductor wafer having a predetermined polarity; a first semiconductor layer on one surface of the semiconductor wafer; a first transparent conductive layer on the first semiconductor layer; a first electrode on the first transparent conductive layer; a second semiconductor layer on the other surface of the semiconductor wafer, wherein the second semiconductor layer is different in polarity from the first semiconductor layer; a second transparent conductive layer on the second semiconductor layer; a second electrode on the second transparent conductive layer; and at least one of first and second auxiliary layers, wherein the first auxiliary layer is formed between the first semiconductor layer and the first transparent conductive layer so as to smoothly drift carriers generated in the semiconductor wafer to the first transparent conductive layer, and the second auxiliary layer is formed between the second semiconductor layer and the second transparent conductive layer so as to smoothly drift carriers generated in the semiconductor wafer to the second transparent conductive layer. | 12-01-2011 |
20120024370 | Wafer Type Solar Cell and Method for Manufacturing the Same - Disclosed is a wafer type solar cell and a method for manufacturing the same, which facilitates to enhance hole-collecting efficiency, and to improve cell efficiency by preventing transmittance of solar ray from being lowered, the wafer type solar cell comprising a first semiconductor layer of a semiconductor wafer; a second semiconductor layer doped with P-type dopant, wherein the second semiconductor layer is formed on one surface of the first semiconductor layer, on which solar ray is incident; a third semiconductor layer doped with N-type dopant, wherein the third semiconductor layer is formed on the other surface of the first semiconductor layer; a first passivation layer on the second semiconductor layer; a second passivation layer on the third semiconductor layer; a first electrode connected with the second semiconductor layer; and a second electrode connected with the third semiconductor layer. | 02-02-2012 |