Patent application number | Description | Published |
20120080754 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions. | 04-05-2012 |
20120080759 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A first transistor includes a first impurity layer of a first conduction type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, a first gate electrode formed above the first gate insulating film, and first source/drain regions of a second conduction type formed in the first epitaxial semiconductor layer and in the semiconductor substrate in the first region. A second transistor includes a second impurity layer of the first conduction type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and being thinner than the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer, a second gate electrode formed above the second gate insulating film, and second source/drain regions of the second conduction type formed in the second epitaxial semiconductor layer and in the semiconductor substrate in the second region. | 04-05-2012 |
20120083082 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The method of manufacturing the semiconductor device includes forming a trench to be an alignment mark in a semiconductor substrate, forming a mask film exposing a region to be a device isolation region and covering a region to be a device region by aligning with the alignment mark above the semiconductor substrate with the trench formed in, anisotropically etching the semiconductor substrate with the mask film as a mask to form a device isolation trench in the region to be the device isolation region of the semiconductor substrate, and burying the device isolation trench by an insulating film to form a device isolation insulating film. In forming the trench, the trench is formed in a depth which is smaller than a depth equivalent to a thickness of the mask film. | 04-05-2012 |
20120223391 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film. | 09-06-2012 |
20130020650 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions. | 01-24-2013 |
20140179072 | SEMICONDUCTOR DEVICE HAVING EPITAXIAL SEMICONDUCTOR LAYER ABOVE IMPURITY LAYER - The semiconductor device includes a first transistor including a first impurity layer of a first conductivity type formed in a first region of a semiconductor substrate, a first epitaxial semiconductor layer formed above the first impurity layer, a first gate insulating film formed above the first epitaxial semiconductor layer, and a first gate electrode formed above the first gate insulating film, and a second transistor including a second impurity layer of the second conductivity type formed in a second region of the semiconductor substrate, a second epitaxial semiconductor layer formed above the second impurity layer and having a thickness different from that of the first epitaxial semiconductor layer, a second gate insulating film formed above the second epitaxial semiconductor layer and having a film thickness equal to that of the first gate insulating film and a second gate electrode formed above the second gate insulating film. | 06-26-2014 |
20140235022 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a first transistor including a first impurity layer containing boron or phosphorus, a first epitaxial layer formed above the first impurity layer, a first gate electrode formed above the first epitaxial layer with a first gate insulating film formed therebetween and first source/drain regions, and a second transistor including a second impurity layer containing boron and carbon, or arsenic or antimony, a second epitaxial layer formed above the second impurity layer, a second gate electrode formed above the second epitaxial layer with a second gate insulating film thinner than the first gate insulating film formed therebetween, and second source/drain regions. | 08-21-2014 |
Patent application number | Description | Published |
20080298211 | Disc Device - A disc device includes a lens that focuses a laser light on an optical disc surface, a focus drive unit that drives the lens in a focusing direction, a focus control unit that controls to focus the laser light on the optical disc surface, a focus displacement detecting unit that detects a displaced amount in the focusing direction, a differentiation unit that differentiates a focus displacement detected signal, and a unit that inverts a sign of a differentiated signal, thereby, the disc device is driven intermittently to restrain a motion of an objective lens in a focusing direction and avoid colliding the objective lens with the optical disc surface. | 12-04-2008 |
20090074379 | Recorder/Reproducer - Apparatus which records and reproduces signals includes a unit which receives signals, a first recorder which records the signals received by the unit on a first recording medium, and a first reproducer which reproduces the signals recorded on the first recording medium. A second recorder is provided which records the signals reproduced by the first reproducer on a second recording medium, a detector is provided which detects a commercial message portion from the signals recorded on the second recording medium, and a second reproducer is provided which reproduces the signals recorded on the second recording medium while excluding the commercial message portion detected by the detector. | 03-19-2009 |
20090147632 | OPTICAL DISC DRIVE APPARATUS - In an optical disc drive apparatus, when a start time of a tracking pull-in operation is adjusted according to the eccentricity amount of the optical disc, a suitable starting point of the tracking pull-in operation can be always captured and the pull-in operation of the tracking control can be stably performed, without depending on the eccentricity amount of the optical disc. Further, the eccentricity amount and an eccentricity phase are detected from a track zero crossing signal before the tracking pull-in, and an eccentricity compensation signal of the track is added to the tracking control signal. As a result, also in the optical disc with the large eccentricity amount, the tracking pull-in operation can be stably performed. | 06-11-2009 |
20090201668 | LIQUID CRYSTAL DISPLAY APPARATUS - A light source includes a plurality of light emitting elements, and each light emitting element is disposed in such a manner that a direction of an optical axis of the light emitting element having a highest luminance is disposed at a predetermined inclination angle relative to a plane of the liquid crystal display. The optical guide member has an optical guide portion of a wedge shape having a first flat plane generally perpendicular to the optical axis of each light emitting element for receiving light from each light emitting element and a second flat plane having a predetermined angle relative to the optical axis and intersecting the first flat plane at an acute angle for reflecting light. A plurality of optical guide portions are disposed in a plane and formed integrally along a predetermined direction corresponding to the inclination direction of the light emitting elements. | 08-13-2009 |
20110122759 | Data Recording Apparatus and System Having Sustained High Transfer Rates - According to the invention, techniques for recording data onto recording media at relatively high transfer rates for relatively long periods of time. Embodiments according to the present invention include systems and apparatus capable of an improved sustained rate of data recording onto disk type-recording media, for example. Many embodiments can remove the upper limits of both recording capacity and the number of media that can be used. Select embodiments can be used with different kinds of recording media as well. In a specific embodiment, the area on a hard disk is divided into three areas. A first area can be suitable for sequential recording of continuous data. A second area can be suitable for random recording of discontinuous data. A third area can be used for recording logical sector numbers, coupling logical sector numbers, and file information that are used for marking each of the first and second areas, so that continuous data can be recorded on the hard disk at a high data rate. | 05-26-2011 |
20140064049 | OPTICAL INFORMATION RECORDING DEVICE - An optical information recording/reproduction device includes a detection unit which detects a focus-direction height of a recording medium, a focus adjustment unit which adjusts a focus-direction distance between the recording medium and a signal light optical system and a reference light system, and a control unit which controls the focus adjustment unit so that a relative distance between the object lens of the signal light optical system and the recording medium is adjusted according to the focus-direction height of the recording medium detected by the detection unit. | 03-06-2014 |
Patent application number | Description | Published |
20120025659 | ARMATURE WINDING OF ROTATING ELECTRICAL MACHINE - According to one embodiment, there is provided a 3-phase 2-pole 2-layer armature winding, housed in 72 slots provided in a laminated iron core, a winding of each phase including six parallel circuits separated into two phase belts. Upper coil pieces of first and fourth parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, and lower coil pieces of the first and fourth parallel circuits are placed at 1st, 6th, 9th, and 10th positions, upper and lower coil pieces of second and fifth parallel circuits are placed at 2nd, 5th, 8th, and 11th positions, and upper coil pieces of third and six parallel circuits are placed at 1st, 6th, 9th, and 10th positions, and lower coil pieces of the third and six parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, from the center of a pole. | 02-02-2012 |
20130334924 | ARMATURE WINDING OF ROTATING ELECTRICAL MACHINE - According to one embodiment, there is provided a 3-phase 2-pole 2-layer armature winding, housed in 72 slots provided in a laminated iron core, a winding of each phase including six parallel circuits separated into two phase belts. Upper coil pieces of first and fourth parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, and lower coil pieces of the first and fourth parallel circuits are placed at 1st, 6th, 9th, and 10th positions, upper and lower coil pieces of second and fifth parallel circuits are placed at 2nd, 5th, 8th, and 11th positions, and upper coil pieces of third and six parallel circuits are placed at 1st, 6th, 9th, and 10th positions, and lower coil pieces of the third and six parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, from the center of a pole. | 12-19-2013 |
20140252907 | ARMATURE WINDING OF ROTATING ELECTRICAL MACHINE - According to one embodiment, there is provided a 3-phase 2-pole 2-layer armature winding, housed in 72 slots provided in a laminated iron core, a winding of each phase including six parallel circuits separated into two phase belts. Upper coil pieces of first and fourth parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, and lower coil pieces of the first and fourth parallel circuits are placed at 1st, 6th, 9th, and 10th positions, upper and lower coil pieces of second and fifth parallel circuits are placed at 2nd, 5th, 8th, and 11th positions, and upper coil pieces of third and six parallel circuits are placed at 1st, 6th, 9th, and 10th positions, and lower coil pieces of the third and six parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, from the center of a pole. | 09-11-2014 |
20150162795 | ARMATURE WINDING OF ROTATING ELECTRICAL MACHINE - According to one embodiment, there is provided a 3-phase 2-pole 2-layer armature winding, housed in 72 slots provided in a laminated iron core, a winding of each phase including six parallel circuits separated into two phase belts. Upper coil pieces of first and fourth parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, and lower coil pieces of the first and fourth parallel circuits are placed at 1st, 6th, 9th, and 10th positions, upper and lower coil pieces of second and fifth parallel circuits are placed at 2nd, 5th, 8th, and 11th positions, and upper coil pieces of third and six parallel circuits are placed at 1st, 6th, 9th, and 10th positions, and lower coil pieces of the third and six parallel circuits are placed at 3rd, 4th, 7th, and 12th positions, from the center of a pole. | 06-11-2015 |
Patent application number | Description | Published |
20120303684 | FILE HISTORY RECORDING SYSTEM, FILE HISTORY MANAGEMENT SYSTEM AND FILE HISTORY RECORDING METHOD - At the time of copy & paste, an item, a size and a paste content are recorded, and the importance of the paste is determined based on the number of pasted items, and a pasted data size relative to the overall file. Also, an item name and a change content are recorded, and when the manager inputs an important keyword (or unimportant keyword) in visualizing a file history, the importance is increased (or decreased) if the keyword is included in the item name or the change content. A function of displaying the file history in order of importance if the file history is displayed in table format in visualizing the file history, and a function of displaying, or highlighting, only the source file in which the importance is greater than or equal to a threshold set by the manager if the file history is displayed graphically are provided. | 11-29-2012 |
20130263156 | OPERATION LOG COLLECTION METHOD AND DEVICE - In order to evaluate the service quality of an application, there are methods which acquire various types of events which occur upon a Web browser upon which an application is operating in order to analyze thereof. On this occasion, if all events are acquired/collected, a load is placed thereby upon the Web browser or a server which records the events. In the present invention, when the Web browser starts the application, a connection is made to an event handler which acquires events related to user operations or application responses. When the event handler detects the occurrence of an event, if the event has not been recorded in the past, the event is recorded as a log. In the case of another event, in case a script has been executed or in case data has been modified, the event is recorded as a log. | 10-03-2013 |