Yaneda
Takeshi Yaneda, Mie JP
Patent application number | Description | Published |
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20090073217 | Method of removing air from an ink jet device, and ink jet device - An ink jet device ( | 03-19-2009 |
Takeshi Yaneda, Osaka-Shi JP
Patent application number | Description | Published |
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20120001190 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING SAME - The invention provides a thin film transistor that can improve its operating speed by improving crystallinity near a bottom surface of a channel layer. Of laser light irradiated onto an amorphous silicon layer, light transmitted through the amorphous silicon layer is absorbed by a gate electrode | 01-05-2012 |
20120228621 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer ( | 09-13-2012 |
20120248450 | ACTIVE MATRIX SUBSTRATE AND METHOD FOR PRODUCING SAME - The present invention provides an active matrix substrate that is capable of reliably connecting a plurality of conductive layers that are arranged with an insulating layer therebetween. The active matrix substrate of the present invention has a first conductive layer (CS) and a second conductive layer ( | 10-04-2012 |
20130048999 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device ( | 02-28-2013 |
20130207115 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF - A semiconductor device ( | 08-15-2013 |
Takeshi Yaneda, Osaka JP
Patent application number | Description | Published |
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20120104406 | THIN-FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN-FILM TRANSISTORS - Disclosed is a high-quality, efficiently manufacturable thin film transistor in which leakage current is minimized. The thin film transistor is provided with a semiconductor layer ( | 05-03-2012 |
20130102115 | METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE - The disclosed method for manufacturing an active matrix substrate includes a step in which a first mask is used to pattern a first conductive layer G, CS, and S, a step in which a second mask is used to pattern a first insulating layer, a step in which a third mask is used to pattern a semiconductor layer, a step in which a fourth mask is used to pattern a second conductive later, a step in which a fifth mask is used to pattern a second insulating layer, and a step in which a sixth mask is used to pattern a third conductive layer. | 04-25-2013 |
20130105802 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND DISPLAY DEVICE | 05-02-2013 |