Patent application number | Description | Published |
20080258218 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A MIS transistor having an inclined stacked source/drain structure increased in speed is provided. The MIS transistor comprises: a gate electrode formed on a substrate; a first sidewall insulating film formed on the substrate and along a sidewall of the gate electrode; source/drain semiconductor regions formed on a main surface of the substrate and respectively having one edge positioned under the sidewall of the gate electrode; a first stacked layer formed on the source/drain semiconductor regions and in contact with the first sidewall insulating film; a second sidewall insulating film formed on the stacked layer and in contact with the first sidewall insulating film; and a second stacked layer formed on the first stacked layer and in contact with the second sidewall insulating layer. | 10-23-2008 |
20090045470 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - Provided is a technology capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A p type strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The p type strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the p type strained silicon layer and p type silicon-germanium layer. At a position which is below the end of a gate electrode and at which misfit dislocations occur, the impurity concentration of the n type strained silicon layer and n type silicon-germanium layer is 1×10 | 02-19-2009 |
20090140233 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device having a large storage capacity and stabilized rewriting conditions in which a memory cell includes a nonvolatile recording material layer, a selector element and a semiconductor layer provided between the nonvolatile recording material layer and the selector element and having a thickness ranging from 5 to 200 nm. | 06-04-2009 |
20090189137 | NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - In a phase change memory, electric property of a diode used as a selection device is extremely important. However, since crystal grain boundaries are present in the film of a diode using polysilicon, it involves a problem that the off leak property varies greatly making it difficult to prevent erroneous reading. For overcoming the problem, the present invention provides a method of controlling the temperature profile of an amorphous silicon in the laser annealing for crystallizing and activating the amorphous silicon thereby controlling the crystal grain boundaries. According to the invention, variation in the electric property of the diode can be decreased and the yield of the phase-change memory can be improved. | 07-30-2009 |
20090261412 | Semiconductor Device and Manufacturing Method of the Same - A semiconductor device and manufacturing method of the same is provided in which the driving current of a pMOSFET is increased, through a scheme formed easily using an existing silicon process. A pMOSFET is formed with a channel in a <100> direction on a (100) silicon substrate. A compressive stress is applied in a direction perpendicular to the channel by an STI. | 10-22-2009 |
20090269892 | THIN FILM SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM PRODUCTION PROCESS AND PRODUCTION APPARATUS - A process for producing an image display device using a thin film semiconductor device is provided which includes forming a polycrystalline semiconductor thin film on a substrate. A substantially belt-shaped crystal is formed which is crystallized so as to grow crystal grains in a direction substantially parallel to a scanning direction of a CW laser beam by scanning the CW laser beam along the substrate, thereby irradiating the CW laser beam on portions of the polycrystalline semiconductor thin film formed onto the substrate. | 10-29-2009 |
20110018032 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer. | 01-27-2011 |
20120153145 | SCANNING ELECTRON MICROSCOPE AND SAMPLE OBSERVATION METHOD - A scanning electron microscope of the present invention performs scanning by changing a scanning line density in accordance with a sample when an image of a scanned region is formed by scanning a two-dimensional region on the sample with an electron beam or is provided with a GUI having sample information input means which inputs information relating to the sample and display means which displays a recommended scanning condition according to the input and performs scanning with a scanning line density according to the sample by selecting the recommended scanning condition. As a result, in observation using a scanning electron microscope, a suitable scanning device which can improve contrast of a profile of a two-dimensional pattern and suppress shading by suppressing the influence of charging caused by primary charged particle radiation and by improving a detection rate of secondary electrons and a scanning method are provided. | 06-21-2012 |
20140097342 | ELECTRON MICROSCOPE AND IMAGE CAPTURING METHOD USING ELECTRON BEAM - The present invention is characterized by an electron microscope which intermittently applies an electron beam to a sample and detects a secondary electron signal, wherein an arbitrarily defined detection time (T | 04-10-2014 |
20140264018 | OBSERVATION SPECIMEN FOR USE IN ELECTRON MICROSCOPY, ELECTRON MICROSCOPY, ELECTRON MICROSCOPE, AND DEVICE FOR PRODUCING OBSERVATION SPECIMEN - The electrical charging by a primary electronic is inhibited to produce a clear edge contrast from an observation specimen (i.e., a specimen to be observed), whereby the shape of the surface of a sample can be measured with high accuracy. An observation specimen in which a liquid medium comprising an ionic liquid is formed in a thin-film-like or a webbing-film-like form on a sample is used. An electron microscopy using the observation specimen comprises: a step of measuring the thickness of a liquid medium comprising an ionic liquid on a sample; a step of controlling the conditions for irradiation with a primary electron on the basis of the thickness of the liquid medium comprising the ionic liquid; and a step of irradiating the sample with the primary electron under the above-mentioned primary electron irradiation conditions to form an image of the shape of the sample. | 09-18-2014 |
20150041644 | ELECTRONIC MICROSCOPE, SETTING METHOD OF OBSERVATION CONDITION OF ELECTRONIC MICROSCOPE, AND OBSERVATION METHOD USING ELECTRONIC MICROSCOPE - An automatic setting method of an observation condition to facilitate analysis of an image and a sample observation method by automatic setting in an observation method of a structure of a sample by the electronic microscope and an electronic microscope having an automatic setting function are provided. The method includes a step of irradiating a fixed position in an observation region with an intermittent pulsed electron beam; a step of detecting a time change of an emission electron from the sample by the intermittent electron beam; and a step of setting the observation condition of the electronic microscope from the time change of the emission electron. | 02-12-2015 |
Patent application number | Description | Published |
20100169687 | DATA STORAGE DEVICE AND POWER-SAVING CONTROL METHOD FOR DATA STORAGE DEVICE - A data storage device includes a first nonvolatile memory, a second volatile memory that temporarily stores therein data to be transferred between a host device and the first memory, a first control unit that controls the second memory, a second control unit that controls data transfer between the first control unit and the first memory, a third control unit that controls data transfer between the host device and the first control unit, and a clock stop unit that stops a clock signal supplied to the first to third control units in conjunction with a power consumption control of the third control unit to perform a power saving control. | 07-01-2010 |
20130173986 | MEMORY CONTROLLER, DATA STORAGE DEVICE, AND MEMORY CONTROLLING METHOD - A memory controller includes a first error detection code generator for generating a first error detection code for data received from a host, a controller to write the data and the first error detection code to nonvolatile memory and to read the data and the first error detection code from the nonvolatile memory, an error detector to perform an error detection based on the data and the first error detection code that are read from the nonvolatile memory, a second error detection code generator to generate a second detection error code based on the data read from the nonvolatile memory, and a mismatch code generator to generate a mismatch code signaling the presence of an error in the data, wherein either the second error detection code or the mismatch code is selected based on the error detection and sent to the host. | 07-04-2013 |
Patent application number | Description | Published |
20080289573 | CRYSTALLIZATION METHOD, CRYSTALLIZATION APPARATUS, PROCESSED SUBSTRATE, THIN FILM TRANSISTOR AND DISPLAY APPARATUS - There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film. | 11-27-2008 |
20090180190 | CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY - A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film. | 07-16-2009 |
20090181483 | CRYSTALLIZATION APPARATUS, OPTICAL MEMBER FOR USE IN CRYSTALLIZATION APPARATUS, CRYSTALLIZATION METHOD, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF MATRIX CIRCUIT SUBSTRATE OF DISPLAY - A crystallization method includes wavefront-dividing an incident light beam into a plurality of light beams, condensing the wavefront-divided light beams in a corresponding phase shift portion of a phase shift mask or in the vicinity of the phase shift portion to form a light beam having an light intensity distribution of an inverse peak pattern in which a light intensity is minimum in a point corresponding to the phase shift portion of the phase shift mask, and irradiating a polycrystalline semiconductor film or an amorphous semiconductor film with the light beam having the light intensity distribution to produce a crystallized semiconductor film. | 07-16-2009 |