Patent application number | Description | Published |
20080241745 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME - A negative resist composition, includes: (A) an alkali-soluble polymer containing a specific repeating unit as defined in the specification; (B) a crosslinking agent capable of crosslinking with the alkali soluble polymer (A) under an action of an acid; (C) a compound capable of generating an acid upon irradiation with actinic rays or radiation; (D) a specific quaternary ammonium salt as defined in the specification; and (E) an organic carboxylic acid, and a pattern forming method uses the composition. | 10-02-2008 |
20110287234 | NEGATIVE RESIST PATTERN FORMING METHOD, DEVELOPER AND NEGATIVE CHEMICAL-AMPLIFICATION RESIST COMPOSITION USED THEREFOR, AND RESIST PATTERN - A resist pattern forming method including in the following order, (1) a step of forming a film by using a negative chemical-amplification resist composition capable of undergoing negative conversion by a crosslinking reaction, (2) a step of exposing the film, and (4) a step of developing the exposed film by using a developer containing an organic solvent; a developer and a negative chemical-amplification resist composition used therefor; and a resist pattern formed by the pattern forming method. | 11-24-2011 |
20120003585 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION - According to one embodiment, an actinic-ray- or radiation-sensitive resin composition comprises (A) any of the compounds of General Formula (I) below and (B) a resin that contains the residue (c) of a compound having an ionization potential value lower than that of phenol and when acted on by an acid, exhibits an increased solubility in an alkali developer, | 01-05-2012 |
20120301817 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD - An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method. | 11-29-2012 |
20130029254 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION - A chemical amplification resist composition contains: (A) a polymer compound having a phenolic hydroxyl group and a group formed by substituting a substituent for a hydrogen atom of a hydroxyl group in a phenolic hydroxyl group and satisfying the following (a) to (c) at the same time: (a) the polydispersity is 1.2 or less, (b) the weight average molecular weight is from 2,000 to 6,500, and (c) the glass transition temperature (Tg) is 140° C. or more. | 01-31-2013 |
20130302726 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM USING THE COMPOSITION, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD, PHOTOMASK AND POLYMER COMPOUND - A chemical amplification resist composition contains: (A) a polymer compound having a structure where a hydrogen atom of a phenolic hydroxyl group is replaced by a group having a non-acid-decomposable polycyclic alicyclic hydrocarbon structure; and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation. | 11-14-2013 |
Patent application number | Description | Published |
20110175616 | Nuclear Magnetic Resonance Imaging System and Coil Unit - There is provided a coil unit having a large region of homogeneous sensitivity for the axial direction even with a shortened rung length of birdcage type RF coil. | 07-21-2011 |
20120176137 | GRADIENT MAGNETIC FIELD COIL AND MAGNETIC RESONANCE IMAGING DEVICE - In the magnetic resonance imaging device, the distance between the first and second coils is different in the circumferential direction and has a first region (A | 07-12-2012 |
20130184564 | MAGNETIC RESONANCE IMAGING DEVICE - The magnetic resonance imaging device of the present invention includes a gantry and a bed part comprising a top panel, the gantry comprises a circumferential panel covering outer circumference of a tunnel-shaped static magnetic field space, and a front panel having an opening serving as entrance of a bore for the static magnetic field space, this front panel comprises an arc-shaped outer panel extending from an upper part of the opening serving as entrance of the bore to the ground plane via both sides of the opening, and an inner panel disposed inside the outer panel, a portion connecting the outer panel and the inner panel constitutes a top surface protruding forwardly, and the inner panel is formed in a recessed shape with a concave curved surface extending from the top surface to the opening serving as entrance of the bore. | 07-18-2013 |
20140176138 | GRADIENT MAGNETIC FIELD COIL DEVICE, ADJUSTMENT METHOD THEREFOR, AND MAGNETIC RESONANCE IMAGING APPARATUS - In a gradient magnetic field coil device including: a plurality of main coils generating in an imaging region of a magnetic field resonance imaging device a magnetic field distribution in which an intensity linearly inclines; and a plurality of shield coils, arranged on an opposite side of the imaging region across the main coils, suppressing residual magnetic field generated by the main coils on the opposite side. The plurality of main coils and the plurality of shield coils are connected in series. The device further includes a plurality of current adjusting devices, connected to the shield coils in parallel, independently adjusting currents flowing through the shield coils, respectively, to enhance symmetry of the residual magnetic field. The gradient magnetic field coil device is provided which can suppress generation of eddy current magnetic field even if there is a relative position deviation between the main coils and shield coils. | 06-26-2014 |
Patent application number | Description | Published |
20090072244 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND SILICON CARBIDE SEMICONDUCTOR DEVICE - The object is to provide a method for the fabrication of a semiconductor device having undergone an anneal treatment for the purpose of forming such ohmic contact as enables decrease of ohmic contact resistance and being provided on the (000-1) plane of silicon carbide with an insulating film and provide the semiconductor device. The method for the fabrication of a silicon carbide semiconductor device includes the steps of performing thermal oxidation on the (000-1) plane of a silicon carbide semiconductor in a gas containing at least oxygen and moisture, thereby forming an insulating film in such a manner as to contact the (000-1) plane of the silicon carbide semiconductor, removing part of the insulating film, thereby forming an opening part therein, depositing contact metal on at least part of the opening part, and performing a heat treatment, thereby forming a reaction layer of the contact metal and silicon carbide, wherein the heat treatment is implemented in a mixed gas of an inert gas and hydrogen. | 03-19-2009 |
20090134402 | SILICON CARBIDE MOS FIELD-EFFECT TRANSISTOR AND PROCESS FOR PRODUCING THE SAME - In the SiC vertical MOSFET having a low-concentration p-type deposition film provided therein with a channel region and a base region resulting from reverse-implantation to n-type through ion implantation, dielectric breakdown of gate oxide film used to occur at the time of off, thereby preventing a further blocking voltage enhancement. This problem has been resolved by interposing of a low-concentration n-type deposition film between a low-concentration p-type deposition film and a high-concentration gate layer and selectively forming of a base region resulting from reverse-implantation to n-type through ion implantation in the low-concentration p-type deposition film so that the thickness of deposition film between the high-concentration gate layer and each of channel region and gate oxide layer is increased. | 05-28-2009 |
20090173949 | SILICON CARBIDE MOS FIELD EFFECT TRANSISTOR WITH BUILT-IN SCHOTTKY DIODE AND METHOD FOR MANUFACTURING SUCH TRANSISTOR - This invention has a cell incorporating a built-in Schottky diode region disposed in at least part of an elementary cell that constitutes an SiC vertical MOSFET provided in a low-density p-type deposit film with a channel region and a base region inverted to an n-type by ion implantation. This built-in Schottky diode region has built therein a Schottky diode of low on-resistance that is formed of a second deficient pan disposed in a high-density gate layer, a second n-type base layer penetrating a low-density p-type deposit layer formed thereon, reaching an n-type drift layer of the second deficient part and attaining its own formation in consequence of inversion of the p-type deposit layer into an n-type by the ion implantation of an n-type impurity from the surface, and a source electrode connected in the manner of forming a Schottky barrier to the surface-exposed part of the second n-type base layer. | 07-09-2009 |
20100012951 | Silicon carbide semiconductor device and method for producing the same - In an SiC vertical MOSFET comprising a channel region and an n-type inverted electron guide path formed through ion implantation in a low-concentration p-type deposition film, the width of the channel region may be partly narrowed owing to implantation mask positioning failure, and the withstand voltage of the device may lower, and therefore, the device could hardly satisfy both low on-resistance and high withstand voltage. In the invention, second inverted layers ( | 01-21-2010 |