Patent application number | Description | Published |
20100072026 | LATERAL LOAD BUILDING CONVEYOR APPARATUS - A load moving apparatus is operable to move a load, such as a stack of sheet product, in a first and second direction on a staging area. The load moving apparatus includes a first conveyor, a second conveyor, and a translating device. The first conveyor defines the staging area and is configured to move a load in a first direction. The second conveyor is positioned within the staging area and is configured to move the load in a second direction different from the first direction. The translating device is configured to move vertically one of the first conveyor and the second conveyor relative to the other of the first conveyor and the second conveyor. The load moving apparatus can be used to build or break down loads entering the staging area. | 03-25-2010 |
20120065880 | Ground Location of Work Truck - A vehicle tracking system tracks the position of at least one vehicle and displays the tracked position. The system includes a plurality of beacons, at least one provided on each vehicle, configured to emit a corresponding identifying signal. A camera is configured to generate image data including region data based on a region in which the vehicles may be located, and beacon data based on the identifying signals corresponding to the beacons located in the region. A controller is configured to process the beacon data to generate position data based on a corresponding position of the beacons located in the region and to generate identification data, which corresponds to each of the identifying signals emitted by the beacons located in the region. Also, the controller outputs at least one of the image data, the position data, and the identification data to the monitor. | 03-15-2012 |
20120247347 | Compression Conveyor For Strapping System - In one aspect, the present invention contemplates a strapping station that integrates with a machine for wrapping and clamping a strap around a load, particularly a palletized load. The strapping station includes a transfer conveyor and a compression conveyor that is supported to be lowered onto the upper surface of a load to apply pressure to or compress the load during the strapping operation. The compression conveyor is maintained in that position, continuously applying pressure to the load, even as the load is moved for the application of straps at different locations. | 10-04-2012 |
20120273566 | Ground Location of Work Truck - A vehicle tracking system for tracking a position of at least one vehicle of a plurality of vehicles within a region, includes a plurality of identifiers, an imaging device, and a controller. At least one of the identifiers is provided on each of the vehicles. The imaging device is configured to generate image data including (i) region data representative of the region and (ii) identifier data representative of the identifiers located in the region. The controller is configured (i) to process the identifier data to generate position data representative of a position of each of the identifiers within the region, (ii) to process the identifier data to generate identification data that are unique to each identifier, and (iii) to output at least one of the image data, the position data, and the identification data to a monitor. | 11-01-2012 |
Patent application number | Description | Published |
20080203398 | Silicon carbide self-aligned epitaxial MOSFET and method of manufacturing thereof - A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer. | 08-28-2008 |
20090206347 | Semiconductor Device - A unipolar semiconductor device having a drift layer ( | 08-20-2009 |
20100041195 | METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSFET FOR HIGH POWERED DEVICE APPLICATIONS - A self-aligned, silicon carbide power metal oxide semiconductor field effect transistor includes a trench formed in a first layer, with a base region and then a source region epitaxially regrown within the trench. A window is formed through the source region and into the base region within a middle area of the trench. A source contact is formed within the window in contact with a base and source regions. The gate oxide layer is formed on the source and base regions at a peripheral area of the trench and on a surface of the first layer. A gate electrode is formed on the gate oxide layer above the base region at the peripheral area of the trench, and a drain electrode is formed over a second surface of the first layer. | 02-18-2010 |
20100059850 | VARACTOR DIODE WITH DOPED VOLTAGE BLOCKING LAYER - A varactor diode includes a contact layer having a first conductivity type, a voltage blocking layer having the first conductivity and a first net doping concentration on the contact layer, a blocking junction on the voltage blocking layer, and a plurality of discrete doped regions in the voltage blocking layer and spaced apart from the carrier injection junction. The plurality of discrete doped regions have the first conductivity type and a second net doping concentration that is higher than the first net doping concentration, and the plurality of discrete doped regions are configured to modulate the capacitance of the varactor diode as a depletion region of the varactor diode expands in response to a reverse bias voltage applied to the blocking junction. Related methods of forming a varactor diode are also disclosed. | 03-11-2010 |
20120105147 | MATCHING NETWORK FOR TRANSMISSION CIRCUITRY - The present disclosure relates to transmission circuitry of a wireless communication device. The transmission circuitry includes power amplifier circuitry, an output matching network, and impedance control circuitry. The power amplifier circuitry amplifies a radio frequency (RF) input signal to provide an amplified RF output signal, which is passed through the output matching network and transmitted via one or more antennas. As the center frequency of the RF input signal and conditions of operating parameters change, the impedance control circuitry adjusts the values of one or more variable impedance elements of the output matching network in a desired fashion. The values of the variable impedance elements are adjusted such that the output matching network concurrently and dynamically presents the desired load impedances at the center frequency and at one or more harmonics of the RF input signal to achieve a given performance specification. | 05-03-2012 |
20130270577 | GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE - A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability. | 10-17-2013 |
20140065991 | MATCHING NETWORK FOR TRANSMISSION CIRCUITRY - The present disclosure relates to transmission circuitry of a wireless communication device. The transmission circuitry includes power amplifier circuitry, an output matching network, and impedance control circuitry. The power amplifier circuitry amplifies a radio frequency (RF) input signal to provide an amplified RF output signal, which is passed through the output matching network and transmitted via one or more antennas. As the center frequency of the RF input signal and conditions of operating parameters change, the impedance control circuitry adjusts the values of one or more variable impedance elements of the output matching network in a desired fashion. The values of the variable impedance elements are adjusted such that the output matching network concurrently and dynamically presents the desired load impedances at the center frequency and at one or more harmonics of the RF input signal to achieve a given performance specification. | 03-06-2014 |