Patent application number | Description | Published |
20080197916 | Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device - Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed. | 08-21-2008 |
20090103863 | MULTI-CHANNEL RING-RESONATOR BASED WAVELENGTH-DIVISION-MULTIPLEXING OPTICAL DEVICE - Provided is a wavelength-division-multiplexing (WDM) device. The device includes an input waveguide, a plurality of ring resonators around the input waveguide, a plurality of output waveguides around the plurality of ring resonators, respectively, and at least one tuning clad pattern adjacent to at least one of the ring resonators, the tuning clad pattern covering a portion of a surface of a corresponding ring resonator. | 04-23-2009 |
20090116523 | HYBRID LASER DIODE - Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide. | 05-07-2009 |
20090148115 | WAVEGUIDE STRUCTURE - A waveguide structure is provided. The waveguide structure includes: a slot channel waveguide including first and second patterns, which are spaced apart from each other to define a slot; a first upper layer covering at least a portion of the slot channel waveguide; and a second upper layer covering the remaining portion of the slot channel waveguide. A thermo-optic coefficient (TOC) of the channel waveguide times a TOC of the second upper layer is a negative number. | 06-11-2009 |
20090152528 | HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME - Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate. | 06-18-2009 |
20090152673 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern. | 06-18-2009 |
20090153864 | GAS SENSING APPARATUS AND METHOD OF SENSING GAS USING THE SAME - Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor. | 06-18-2009 |
20090154517 | HYBRID LASER DIODE FOR SINGLE MODE OPERATION AND METHOD OF FABRICATING THE SAME - Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating. | 06-18-2009 |
20090154868 | SEMICONDUCTOR OPTO-ELECTRONIC INTEGRATED CIRCUITS AND METHODS OF FORMING THE SAME - Provided are semiconductor opto-electronic integrated circuits and methods of forming the same. The semiconductor opto-electronic integrated circuit includes: an optical waveguide disposed on a substrate and including an input terminal and an output terminal; an optical grating formed on the optical waveguide; and an optical active device disposed on the optical grating and receiving an optical signal from the optical waveguide through the optical grating to modulate the optical signal. | 06-18-2009 |
20090154880 | PHOTONICS DEVICE - Provided is a photonics device. The photonics device includes: a substrate including a star coupler region and a transition region; a lower core layer formed on the substrate; and upper core patterns formed on the substrate to define a waveguide. The upper core patterns are disposed on the lower core layer at the transition region, so that the transition region has a multi-layered core structure. | 06-18-2009 |
20090252457 | WAVEGUIDE STRUCTURE AND ARRAYED WAVEGUIDE GRATING STRUCTURE - Provided are a waveguide structure and an arrayed waveguide grating structure. The arrayed waveguide grating structure includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler and the output star coupler. Each of the arrayed waveguides includes at least one section having a high confinement factor and at least two sections having a relatively low confinement factor. The sections of the arrayed waveguides having a high confinement factor have the same structure. | 10-08-2009 |
20090286140 | LITHIUM SECONDARY BATTERY INCLUDING DISCHARGE UNIT - Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion. | 11-19-2009 |
20100133585 | GROWTH OF GERMANIUM EPITAXIAL THIN FILM WITH NEGATIVE PHOTOCONDUCTANCE CHARACTERISTICS AND PHOTODIODE USING THE SAME - A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness. | 06-03-2010 |
20100134936 | CIRCUIT FOR PROTECTING ELECTRICAL AND/OR ELECTRONIC SYSTEM BY USING ABRUPT METAL-INSULATOR TRANSITION DEVICE AND ELECTRICAL AND/OR ELECTRONIC SYSTEM COMPRISING THE CIRCUIT - Provided are an electrical and/or electronic system protecting circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove high-frequency noise with a voltage greater than a rated standard voltage received via a power line or a signal line of an electrical and/or electronic system, and the electrical and/or electronic system including the electrical and/or electronic system protecting circuit. The abrupt MIT device of the electrical and/or electronic system protecting circuit abrupt is connected in parallel to the electrical and/or electronic system to be protected from the noise. The electrical and/or electronic system protecting circuit bypasses toward the abrupt MIT device most of the noise current generated when the voltage greater than the rated standard voltage is applied, thereby protecting the electrical and/or electronic system. | 06-03-2010 |
20100144075 | METHOD OF FORMING OPTICAL WAVEGUIDE - Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding. | 06-10-2010 |
20100144124 | METHOD OF GROWING PURE Ge THIN FILM WITH LOW THREADING DISLOCATION DENSITY - Provided is a method of growing a pure germanium (Ge) thin film with low threading dislocation density using reduced pressure chemical vapor deposition (RPCVD), which includes growing a Ge thin film on a silicon (Si) substrate at a low temperature, performing real-time annealing for a short period of time, and growing the annealed Ge thin film at a high temperature. The grown Ge single crystal thin film can overcome conventional problems of generation of a Si—Ge layer due to Si diffusion, and propagation of misfit dislocation to a high-temperature Ge thin film. | 06-10-2010 |
20100150499 | PHOTONICS DEVICE HAVING ARRAYED WAVEGUIDE GRATING STRUCTURES - Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure. | 06-17-2010 |
20100159674 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer. | 06-24-2010 |
20100270589 | PHOTODETECTORS CONVERTING OPTICAL SIGNAL INTO ELECTRICAL SIGNAL - Provided is a photodetector converting an optical signal into an electrical signal. The photodetector includes: a plurality of semiconductor layers sequentially stacked on a substrate; a plurality of photoelectric conversion units formed in the semiconductor layers, respectively, and having different spectral sensitivities from each other; and buffer layers interposed between the adjacent semiconductor layers, respectively. Each of the buffer layers alleviates stress between the adjacent semiconductor layers. | 10-28-2010 |
20100278477 | SEMICONDUCTOR INTEGRATED CIRCUITS INCLUDING OPTOELECTRONIC DEVICE FOR CHANGING OPTICAL PHASE - Provided is a semiconductor integrated circuit. The semiconductor integrated circuit includes a semiconductor pattern disposed on a substrate and including an optical waveguide part and a pair of recessed portions. The optical waveguide part has a thickness ranging from about 0.05 m to about 0.5 μm. The recessed portions are disposed on both sides of the optical waveguide part and have a thinner thickness than the optical waveguide part. A first doped region and a second doped region are disposed in the recessed portions, respectively. The first and second doped regions are doped with a first conductive type dopant and a second conductive type dopant, respectively. An intrinsic region is formed in at least the optical waveguide part to contact the first and second doped regions. | 11-04-2010 |
20100301448 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - Provided is a semiconductor and a method for forming the same. The method includes forming a buried insulating layer locally in a substrate. The substrate is etched to form an opening exposing the buried insulating layer, and a silicon pattern spaced in at least one direction from the substrate is formed on the buried insulating layer. A first insulating layer is formed to enclose the silicon pattern. | 12-02-2010 |