Patent application number | Description | Published |
20080280422 | Ultra Thin Bumped Wafer with Under-Film - A system to support a die includes a substrate. A solder resist is disposed over the substrate. A first solder bump is disposed in the solder resist to provide electrical connectivity through the solder resist to the substrate. A second solder bump is formed over the solder resist to correspond with a peripheral edge or a corner of the die. The second solder bump provides standoff height physical support to the die. | 11-13-2008 |
20080318396 | Grooving Bumped Wafer Pre-Underfill System - A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves. | 12-25-2008 |
20090068933 | System and Method for Directional Grinding on Backside of a Semiconductor Wafer - A backside grinding apparatus removes semiconductor material from a surface of a semiconductor wafer. The wafer is mounted to a backing plate. The backside surface undergoes a first grinding operation in a rotational motion to remove excess semiconductor material. The semiconductor wafer is then aligned such that edges of the die are oriented along a reference line. The backside surface undergoes a second grinding operation in a linear direction on a 45-diagonal with respect to the reference line to create linear grind marks which are diagonal to the edges of the die. The linear grind marks are formed by an abrasive surface having at least 4000 mesh count. The second grinding operation removes the radial grind marks produced by the first grinding operation. The linear grind marks oriented diagonal with respect to the reference line increases the strength of the die to resist cracking. | 03-12-2009 |
20100200986 | Grooving Bumped Wafer Pre-Underfill System - A method of forming a semiconductor device includes providing a bumped wafer. A plurality of grooves is formed in an active surface of the bumped wafer. A pre-underfill layer is disposed over the active surface, filling the plurality of grooves. A first adhesive layer is mounted to the pre-underfill layer, and a back surface of the bumped wafer is ground. A second adhesive layer is mounted to the back surface of the bumped wafer. The first adhesive layer is peeled from the active surface of the bumped wafer, or the second adhesive layer is mounted to the first adhesive layer. The bumped wafer is singulated into a plurality of segments by cutting the bumped wafer along the plurality of grooves. | 08-12-2010 |
20110037172 | Ultra Thin Bumped Wafer With Under-Film - A semiconductor device includes a wafer and a dicing saw tape that is laminated to a back surface of the wafer. An active surface of the wafer is opposite the back surface of the wafer. The semiconductor device further includes a lamination tape disposed in contact with the wafer. The lamination tape includes an under-film layer contacting the active surface of the wafer. The lamination tape further includes an adhesive layer contacting the under-film layer. | 02-17-2011 |
20110045637 | Ultra Thin Bumped Wafer With Under-Film - A method of making a semiconductor device includes forming an under-film layer over bumps disposed on a surface of a wafer to completely cover the bumps, and forming an adhesive layer over the under-film layer. The method further includes attaching a support layer over the adhesive layer, removing a portion of a back surface of the wafer, and removing the support layer to expose the adhesive layer that remains disposed over the under-film layer. The method further includes removing the adhesive layer to expose the under-film layer while the bumps remain completely covered by the under-film layer, and singulating the wafer to form a semiconductor die. The method further includes pressing the bumps into contact with a substrate while the under-film layer provides an underfill between the semiconductor die and the substrate. | 02-24-2011 |
20110101546 | System and Method for Directional Grinding on Backside of a Semiconductor Wafer - A semiconductor device includes a backing plate, a semiconductor wafer, and integrated devices. The semiconductor wafer includes a plurality of semiconductor die having edges oriented along a reference line, a front surface facing the backing plate, and a backside surface. The backside surface is formed opposite the front surface and includes linear grind marks oriented along the reference line and diagonal with respect to the edges of the plurality of semiconductor die. The linear grind marks are formed by a linear motion of an abrasive surface, such as by a cylinder or wheel having an abrasive surface, and in one embodiment are oriented at 45 degrees with respect to the reference line. The linear grind marks increase a strength of the plurality of semiconductor die to resist cracking. Integrated devices are formed on the front surface of the semiconductor wafer. | 05-05-2011 |