Patent application number | Description | Published |
20090295402 | VOLTAGE ISLAND PERFORMANCE/LEAKAGE SCREEN MONITOR FOR IP CHARACTERIZATION - A method is provided for characterizing performance of a chip having at least one voltage island and at least one performance screen ring oscillator (PSRO). An on-chip performance monitor (OCPM) is incorporated on the voltage island. Performance measurements of the voltage island are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) are generated with only the voltage island under power. Performance measurements of the performance screen ring oscillator (PSRO) is compared to the performance measurements of the on-chip performance monitor (OCPM) to determine a systematic offset due to the voltage island. Performance models are adjusted using the systematic offset due to the voltage island. | 12-03-2009 |
20100174503 | Monitoring NFET/PFET Skew in Complementary Metal Oxide Semiconductor Devices - An apparatus for directly measuring performance offset of NFET transistors with respect to PFET transistors in CMOS device processing includes a ring oscillator whose frequency is used to measure random across chip variations, as well as correlated across chip variations; a balanced inverter having a input driven by the ring oscillator, wherein the balanced inverter is designed to be formed such that a current drive capability of one or more NFET devices of the inverter is substantially equal to a current drive capability of one or more PFET devices of the inverter at a given operating temperature; and a capacitor coupled to an output of the inverter, with a voltage across the capacitor indicative of whether a skew exists between NFET device performance and PFET device performance. | 07-08-2010 |
20100244132 | Methods for Normalizing Strain in Semiconductor Devices and Strain Normalized Semiconductor Devices - A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. | 09-30-2010 |
20130032894 | METHODS FOR NORMALIZING STRAIN IN SEMICONDCUTOR DEVICES AND STRAIN NORMALIZED SEMICONDUCTOR DEVICES - A method of normalizing strain in semiconductor devices and normalized strain semiconductor devices. The method includes: forming first and second field effect transistors of an integrated circuit; forming a stress layer over the first and second field effect transistors, the stress layer inducing strain in channel regions of the first and second field effect transistors; and selectively thinning the stress layer over at least a portion of the second field effect transistor. | 02-07-2013 |
Patent application number | Description | Published |
20120287556 | AMORPHOUS POLYCARBONATE FILMS FOR CAPACITORS, METHODS OF MANUFACTURE, AND ARTICLES MANUFACTURED THEREFROM - A uniaxially-stretched, extruded film comprising a polycarbonate, wherein the extruded film has at least one wrinkle-free region having a first surface and a second surface, the at least one extruded wrinkle-free region comprising: an extruded thickness of more than 0 and less than 7 micrometer, and a variation of the thickness of the film of +/−10% of the thickness of the film, and a surface roughness average that is less than +/−3% of the average thickness of the film as measured by optional profilometery; and further wherein the film has a dielectric constant at 1 kHz and room temperature of at least 2.7; a dissipation factor at 1 kHz and room temperature of 1% or less; and a breakdown strength of at least 300 Volt/micrometer. | 11-15-2012 |
20130034669 | METHODS OF MAKING CELL CARRIER - A method of making a carrier for growing cells, including providing a polymer film; embossing a patterned surface one or more sides of the polymer film with an embossing roller; generating a pattern of structured indentations on the polymer film; and discretizing the patterned polymer film into a plurality of portions. The embossing pattern generates relief features on the carrier surface. An alternative method of making a carrier is also provided, including extruding a polymer film; embossing a patterned surface on the polymer film with a roller; generating a pattern of structured indentations on the polymer film; imparting a surface treatment to the film; and discretizing the treated polymer film into a plurality of portions. | 02-07-2013 |
20140197352 | METHODS AND COMPOSITIONS FOR ENERGY DISSIPATION - A method for forming a composition exhibiting energy dissipation in at least a portion of the frequency range from about 1 GHz to about 20 GHz can comprise treating a magnetic lossy material to increase the brittleness of the material, processing at least a portion of the magnetic lossy material into a powder, and mixing at least a portion of the powder with a dielectric resin, wherein the percentage volume of the powder relative to the total volume of the composition is configured such that dissipation of incident electromagnetic radiation is substantially optimized in at least a portion of the frequency range from about 1 GHz to about 20 GHz. | 07-17-2014 |
20140197977 | METHODS AND COMPOSITIONS FOR DESTRUCTIVE INTERFERENCE - A composition for destructive interference in at least a portion of the frequency range from about 1 GHz to about 20 GHz can comprise a dielectric and a conductive filler mixed with at least a portion of the dielectric, wherein the percentage volume of the conductive filler relative to the total volume of the composition is configured such that the wavelength of sensitivity for the composition is on the order of a wavelength of an incident electromagnetic radiation in at least a portion of the frequency range from about 1 GHz to about 20 GHz. | 07-17-2014 |
20140197978 | METHODS AND COMPOSITIONS FOR ENERGY DISSIPATION - A composition for energy dissipation in at least a portion of the frequency range from about 1 GHz to about 20 GHz, the composition can comprise a dielectric and graphene mixed with at least a portion of the dielectric, wherein the percentage volume of the graphene relative to the total volume of the composition is configured such that dissipation of incident electromagnetic radiation is substantially optimized in at least a portion of the frequency range from about 1 GHz to about 20 GHz. | 07-17-2014 |