Patent application number | Description | Published |
20090067233 | Magnetic random access memory and method of reading data from the same - A magnetic random access memory (MRAM) includes a memory cell having a first transistor and a first magnetic tunneling junction (MTJ) layer, and a reference cell operable as a basis when reading data stored in the memory cell, the reference cell including second and third MTJ layers arranged in parallel to each other, and a second transistor connected in series to each of the second and third MTJ layers, the second transistor having a driving capability corresponding to twice a driving capability of the first transistor of the memory cell. | 03-12-2009 |
20090068782 | Nano-elastic memory device and method of manufacturing the same - A nano-elastic memory device and a method of manufacturing the same. The nano-elastic memory device may include a substrate, a plurality of lower electrodes arranged in parallel on the substrate, a support unit formed of an insulating material to a desired or predetermined thickness on the substrate having cavities that expose the lower electrodes, a nano-elastic body extending perpendicular from a surface of the lower electrodes in the cavities, and a plurality of upper electrodes formed on the support unit and perpendicularly crossing the lower electrodes over the nano-elastic bodies. | 03-12-2009 |
20090285030 | MULTI-BIT NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING THE SAME - A memory device may include a channel including at least one carbon nanotube. A source and a drain may be arranged at opposing ends of the channel and may contact different parts of the channel. A first storage node may be formed under the channel, and a second storage node may be formed on the channel. A first gate electrode may be formed under the first storage node and a second gate electrode may be formed on the second storage node. | 11-19-2009 |
20100272900 | Method of fabricating zinc oxide nanowire using supersonic energy - Provided is a method of fabricating ZnO nanowires using a sonicator. The method includes (a) forming a Zn layer on a surface of a substrate, (b) patterning the Zn layer, and (c) forming ZnO nanowires on the Zn layer by immersing the substrate, on which the Zn layer is patterned in a mixed solution made of a solution containing Zn and a solution ionizing Zn, in a sonicator. ZnO nanowires may be formed at a predetermined location at room temperature according to the present invention. | 10-28-2010 |
20100329001 | Methods of operating semiconductor memory devices including magnetic films having electrochemical potential difference therebetween - Provided are a multi-purpose magnetic film structure using a spin charge, a method of manufacturing the same, a semiconductor device having the same, and a method of operating the semiconductor memory device. The multi-purpose magnetic film structure includes a lower magnetic film, a tunneling film formed on the lower magnetic film, and an upper magnetic film formed on the tunneling film, wherein the lower and upper magnetic films are ferromagnetic films forming an electrochemical potential difference therebetween when the lower and upper magnetic films have opposite magnetization directions. | 12-30-2010 |
20120003895 | Field emission electrode, method of manufacturing the same, and field emission device comprising the same - Provided are a field emission electrode, a method of manufacturing the field emission electrode, and a field emission device including the field emission electrode. The field emission electrode may include a substrate, carbon nanotubes formed on the substrate, and a conductive layer formed on at least a portion of the surface of the substrate. Conductive nanoparticles may be attached to the external walls of the carbon nanotubes. | 01-05-2012 |
20130334632 | NONVOLATILE MAGNETIC MEMORY DEVICE - A nonvolatile magnetic memory device using a magnetic tunneling junction (MTJ) uses as a data storage unit an MTJ including a pinned magnetic layer, a nonmagnetic insulating layer, and a free magnetic layer which are sequentially stacked. The free magnetic layer includes at least one soft magnetic amorphous alloy layer in which zirconium (Zr) is added to a soft magnetic material formed of cobalt (Co) or a Co-based alloy. | 12-19-2013 |