Kim, Kyoungki-Do
Baek Mann Kim, Kyoungki-Do KR
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20090200672 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process. | 08-13-2009 |
20100038788 | MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME - A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern. | 02-18-2010 |
20100193956 | MULTI-LAYER METAL WIRING OF SEMICONDUCTOR DEVICE PREVENTING MUTUAL METAL DIFFUSION BETWEEN METAL WIRINGS AND METHOD FOR FORMING THE SAME - A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer. | 08-05-2010 |
20120007240 | METAL WIRE FOR A SEMICONDUCTOR DEVICE FORMED WITH A METAL LAYER WITHOUT VOIDS THEREIN AND A METHOD FOR FORMING THE SAME - A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO | 01-12-2012 |
Bo-Kyeom Kim, Kyoungki-Do KR
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20090119533 | Digital delay locked loop circuit using mode register set - A semiconductor memory device includes a mode register set for establishing information on a delay time, a delay time calculator for calculating an I/O path delay time of a data clock on a basis of a unit period of a system clock, and a delay locked clock generator for reflecting in the data clock a value of subtracting an output of the delay time calculator from the information established in the mode register set. | 05-07-2009 |
20090273381 | DELAYED LOCKED LOOP CIRCUIT - A delay locked loop circuit for compensating for a phase skew of a memory device includes a first delay locking unit configured to delay an external clock of the memory device by a first amount of delay to output a first internal clock, a second locking unit configured to delay the external clock by a second amount of delay to output a second internal clock, the second amount of delay being greater than the first amount of delay, and a selecting unit configured to select one of the first internal clock and the second internal clock as an internal clock of the memory device. | 11-05-2009 |
20090323444 | SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF - A semiconductor memory device including a first clock transmission path configured to receive a source clock swinging at a CML level through a clock transmission line in response to an enable signal, and to convert the source clock into a clock swinging at a CMOS level. The device also includes a second clock transmission path configured to convert the source clock in a clock swinging at a CMOS level in response to the enable signal, and to output the converted clock through the clock transmission line and a data output unit configured to output data in response to output clocks of the first and second clock transmission lines. | 12-31-2009 |
Bo-Yeun Kim, Kyoungki-Do KR
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20090219774 | SEMICONDUCTOR MEMORY DEVICE AND PARALLEL TEST METHOD OF THE SAME - Semiconductor memory device and parallel test method of the same. The test includes writing data into multiple memory banks simultaneously, reading the data from a portion of the memory banks, compressing the read data and outputting the compressed data to the outside of a chip. | 09-03-2009 |
Buem-Suck Kim, Kyoungki-Do KR
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20090166802 | SEMICONDUCTOR DEVICE WITH FUSE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask. | 07-02-2009 |
20090166803 | SEMICONDUCTOR DEVICE WITH FUSE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor with a fuse includes providing a substrate, forming an insulation layer over the substrate, forming a polysilicon hard mask to form a metal contact over the insulation layer, forming a first mask pattern to form a fuse over the polysilicon hard mask, and removing the polysilicon hard mask exposed by the first hard mask pattern to form a polysilicon fuse connected to a portion of the polysilicon hard mask. | 07-02-2009 |
Byong-Kook Kim, Kyoungki-Do KR
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20100128533 | NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A nonvolatile memory device includes a plurality of strings each of which is configured with a first select transistor, a second select transistor, and a plurality of memory cells connected in series between the first and second select transistors. A common source line is connected to a source of the second select transistor. A metal interconnection is electrically insulated from the common source line, and connected to the source of the second select transistor. | 05-27-2010 |
Dae-Suk Kim, Kyoungki-Do KR
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20090168587 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device having multiple banks each including multiple memory blocks arranged in column and row directions. The memory blocks are divided into multiple memory block groups each sharing a corresponding column select signal. The memory blocks belonging to the respective memory block groups are arranged adjacently in the column direction. Multiple global input/output lines are separately connected to the memory block groups of the respective banks to transfer data of the memory blocks belonging to the respective memory block groups in a time division manner. | 07-02-2009 |
Dong-Hwee Kim, Kyoungki-Do KR
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20090115505 | SEMICONDUCTOR DEVICE WITH CONTROLLABLE DECOUPLING CAPACITOR - Semiconductor device with a controllable decoupling capacitor includes a decoupling capacitor connected between a power voltage terminal and a ground terminal and a switching unit configured to enable/disable the decoupling capacitor in response to a control signal. According to another aspect, a semiconductor device with a controllable decoupling capacitor includes multiple circuits, decoupling capacitors being connected in parallel to each of the circuits and switching units being configured to enable/disable the decoupling capacitors in response to control signals. | 05-07-2009 |
Dong-Kyun Kim, Kyoungki-Do KR
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20080244157 | Semiconductor memory device - A semiconductor memory device includes: a memory core region; a data transfer unit configured to transfer external data to the memory core region; a data code storage unit configured to store test data; and a data selection unit configured to select one of the test data from the data code storage unit and the data from the data transfer unit and output the selected data to the memory core region. | 10-02-2008 |
Eun Hye Kim, Kyoungki-Do KR
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20110178077 | Anti-infective compounds - The present invention relates to small molecule compounds and their use in the treatment of bacterial infections, in particular Tuberculosis. | 07-21-2011 |
Hae-Soo Kim, Kyoungki-Do KR
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20090117728 | METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE - A method for fabricating a nonvolatile memory device includes forming a tunneling insulation layer and a conductive layer for a floating gate over a substrate, partially etching the conductive layer, the tunneling insulation layer, and the substrate to form a trench, forming an isolation layer filling a portion of the trench, forming spacers on both sidewalls of the conductive layer not covered by the isolation layer, recessing a portion of the exposed isolation layer using the spacers as an etch barrier layer to form wing spacers, removing the spacers, performing a primary cleaning process on the resulting substrate using a mixed solution of H | 05-07-2009 |
Hai-Won Kim, Kyoungki-Do KR
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20090140385 | Capacitor with nanotubes and method for fabricating the same - A capacitor with nanotubes and a method for fabricating the same are provided. The capacitor includes: a lower electrode including a patterned conductive layer and a plurality of nanotubes formed on the patterned conductive layer in the shape of whiskers without using a catalytic layer; a dielectric layer formed on the lower electrode; and an upper electrode formed on the dielectric layer. The method includes the steps of: forming a conductive layer for forming a lower electrode; forming a nanotube array including a plurality of nanotubes formed on the conductive layer without using a catalytic layer; forming a dielectric layer on the nanotube array; and forming an upper electrode on the dielectric layer. | 06-04-2009 |
Hong-Ik Kim, Kyoungki-Do KR
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20100044819 | Method for Manufacturing CMOS Image Sensor Having Microlens Therein with High Photosensitivity - The method for manufacturing a CMOS image sensor is employed to prevent bridge phenomenon between adjacent microlenses by employing openings between the microlenses. The method includes the steps of: preparing a semiconductor substrate including isolation regions and photodiodes therein obtained by a predetermined process; forming an interlayer dielectric (ILD), metal interconnections and a passivation layer formed on the semiconductor substrate in sequence; forming a color filter array having a plurality of color filters on the passivation layer; forming an over-coating layer (OCL) on the color filter array by using a positive photoresist or a negative photoresist; forming openings in the OCL by patterning the OCL by using a predetermined mask; and forming dome-typed microlenses on a patterned OCL. | 02-25-2010 |
Jae-Heung Kim, Kyoungki-Do KR
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20090058474 | Output driver of semiconductor memory device - An output driver of a semiconductor memory device is capable of controlling falling and rising edges of an output data. The output driver prevents the first output data form being relatively deteriorated compared with other output data in case that the output data are terminated centering around a predetermined voltage level. The output driver includes a pull-up driver for pull-up driving an output terminal in response to a pull-up control signal, a pull-down driver for pull-down driving the output terminal in response to a pull-down control signal, a first acceleration driver for accelerating the pull-up control signal, and a second acceleration driver for accelerating the pull-down control signal, wherein the first and second acceleration drivers are activated when a first data is outputted. | 03-05-2009 |
Jae-Hong Kim, Kyoungki-Do KR
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20090311856 | FLASH MEMORY DEVICE HAVING RECESSED FLOATING GATE AND METHOD FOR FABRICATING THE SAME - A flash memory device and a method for fabricating the same are provided. The flash memory device includes: an active region having a plurality of surface regions and a plurality of recess regions formed lower than the surface regions; a tunnel oxide layer formed over the recess regions; a plurality of recessed floating gates formed over the tunnel oxide layer to be buried into the recess regions; a plurality of dielectric layers over the recessed floating gates; and a plurality of control gates over the dielectric layers. | 12-17-2009 |
Jae-Ii Kim, Kyoungki-Do KR
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20100169583 | MULTI-PORT MEMORY DEVICE WITH SERIAL INPUT/OUTPUT INTERFACE - A multi-port memory device includes ports, banks, a global data bus, an input/output (I/O) controller, mode register set (MRS), a clock generator, and a test I/O controller. The I/O controller transmits a test signal to the global data bus in response to a mode register enable signal. The MRS generates a test enable signal in response to the mode register enable signal and outputs a mode selection signal which determines a data transmission mode of a test I/O signal in response to the test signal. The clock generator receives an external clock and generates an internal clock based on the external clock in response to the mode selection signal. The test I/O controller inputs/outputs the test I/O signal in synchronism with the internal clock. The mode register enable signal active during a test operation mode for testing a core area of the banks. | 07-01-2010 |
Jae-Il Kim, Kyoungki-Do KR
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20080310240 | Semiconductor memory device having I/O unit - A semiconductor memory device is capable of reducing a test time upon the same condition of the actual operation thereof. The semiconductor memory device includes an output data select unit and a data output unit. The output data select unit selectively outputs valid data, which are loaded on a plurality of global lines, in response to an output control signal activated after a delay time corresponding to an additive latency from entry of a read operation in a test mode. The data output unit aligns data outputted from the output data select unit and outputs the aligned data through data pads. | 12-18-2008 |
20090059689 | Apparatus and method for transmitting/receiving signals at high speed - A semiconductor memory device includes: a data transferrer configured to transfer data; a main driver configured to apply the data to the data transferrer in response to a control signal; and a pre-driver configured to decrease a voltage level of the data transferrer when the voltage level of the data transferrer is higher than a logic threshold voltage, and to increase the voltage level of the data transferrer when the voltage level of the data transferrer is lower than the logic threshold voltage prior to activation of the control signal. | 03-05-2009 |
20090067261 | Multi-port memory device - A multi-port memory device having a plurality of ports performing a serial input/output (I/O) communication with external devices, and a plurality of banks performing a parallel I/O communication with the ports through a plurality of global I/O lines. The multi-port memory device includes: a write clock generating unit for generating a write clock selectively toggled only while write data are applied; a write control unit for generating a write flag signal group and a write driver enable signal in response to the write clock and a write command; a data latch unit for outputting intermediate write data by storing burst write data under the control of the write flag signal group; and a write driver for receiving the intermediate write data to write final write data in a memory cell of a corresponding bank in response to the write driver enable signal and a data mask signal group. | 03-12-2009 |
20090116304 | Wordline driving circuit of semiconductor memory device - Wordline driving circuit of semiconductor memory device includes a bias generator configured to generate a threshold bias voltage for accessing data, an over-driver configured to increase the threshold bias voltage at an initial stage of a data accessing operation and a wordline driver configured to activate a wordline in response to the threshold bias voltage and a signal output from the over-driver. | 05-07-2009 |
20100171545 | HIGH VOLTAGE GENERATOR AND WORD LINE DRIVING HIGH VOLTAGE GENERATOR OF MEMORY DEVICE - A high voltage generator includes: a detection unit for comparing a reference voltage with a high voltage and detecting a voltage level of the high voltage; an oscillator selection unit for generating a first control signal and a second control signal in response to an output signal of the detection unit and a selection signal corresponding to a data operation mode; an oscillator for generating clock signals having different frequencies in response to the first control signal and the second control signal; and a pumping unit for generating the high voltage by performing a charge pumping operation in response to the clock signals. | 07-08-2010 |
20110222359 | APPARATUS AND METHOD FOR TRANSMITTING/RECEIVING SIGNALS AT HIGH SPEED - A semiconductor memory device includes: a data transferrer configured to transfer data; a main driver configured to apply the data to the data transferrer in response to a control signal; and a pre-driver configured to decrease a voltage level of the data transferrer when the voltage level of the data transferrer is higher than a logic threshold voltage, and to increase the voltage level of the data transferrer when the voltage level of the data transferrer is lower than the logic threshold voltage prior to activation of the control signal. | 09-15-2011 |
20110249517 | WORDLINE DRIVING CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE - Wordline driving circuit of semiconductor memory device includes a bias generator configured to generate a threshold bias voltage for accessing data, an over-driver configured to increase the threshold bias voltage at an initial stage of a data accessing operation and a wordline driver configured to activate a wordline in response to the threshold bias voltage and a signal output from the over-driver. | 10-13-2011 |
Jae Soo Kim, Kyoungki-Do KR
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20090269902 | CAPACITOR HAVING TAPERED CYLINDRICAL STORAGE NODE AND METHOD FOR MANUFACTURING THE SAME - A capacitor is made by forming a buffer oxide layer, an etching stop layer, and a mold insulation layer over a semiconductor substrate having a storage node contact plug. The mold insulation layer and the etching stop layer are etched to form a hole in an upper portion of the storage node contact plug. A tapering layer is deposited over the mold insulation layer including the hole. The tapering layer and the buffer oxide layer are etched back so that the tapering layer is remained only at the upper end portion of the etched hole. A metal storage node layer formed on the etched hole over the remaining tapering layer. The mold insulation layer and the remaining tapering layer are removed to form a cylindrical storage node having a tapered upper end. A dielectric layer and a plate node are formed over the storage node. | 10-29-2009 |
Jee-Yul Kim, Kyoungki-Do KR
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20080232180 | Semiconductor memory device and method for driving the same - A semiconductor memory device includes: a delay locked loop (DLL) for delaying an external clock to generate a DLL clock signal; an internal command signal generator for generating an internal command signal in response to an external command; a delay circuit for delaying the internal command signal by a delay time corresponding to a delay time of the DLL to output a delayed internal command signal; and an output enable signal generator for generating an output enable signal based on the delayed internal command signal and the DLL clock signal. | 09-25-2008 |
20090052271 | SEMICONDUCTOR MEMORY DEVICE - An internal signal generator for use in a semiconductor memory device includes an internal read address generation unit and an internal write address generation unit. The internal read address generation unit generates a plurality of read delay addresses by delaying an external address for a predetermined latency shorter than an additive latency set by the semiconductor memory device and selects one of the read delay addresses to thereby output an internal read address. The internal write address generation unit generates a plurality of write delay addresses by delaying the internal read address for a preset latency shorter than a column address strobe (CAS) latency set by the semiconductor memory device and selects one of the write delay addresses to thereby output an internal write address. | 02-26-2009 |
20090086560 | MEMORY DEVICE WITH SELF REFRESH CYCLE CONTROL FUNCTION - Provided is a memory device capable of automatically controlling a self refresh cycle by sensing an ambient temperature, rather than setting Extended Mode Register Set (EMRS) code. The memory device includes a temperature sensing unit for generating a first voltage independent of a temperature variation and a second voltage dependent upon a temperature variation, a comparing unit for comparing the first voltage with the second voltage to provide a comparison result signal, and a self refresh signal generating unit for receiving a self refresh entry signal and generating a self refresh signal of temperature compensated cycle under the control of the comparison result signal. | 04-02-2009 |
20090116322 | Semiconductor memory device having wafer burn-in test mode - A semiconductor memory device includes an enable signal generator configured to generate an enable signal in response to a plurality of burn-in test signals; a test mode signal generator configured to generate a plurality of peripheral region test mode signals and a plurality of core region test mode signals corresponding to the burn-in test signals in response to the enable signal; a core region controller configured to control circuits in a core region in response to the core region test mode signals; and a peripheral region controller configured to control circuits in a peripheral region in response to the peripheral region test mode signals. | 05-07-2009 |
20090168583 | Internal voltage generator of semiconductor memory device - An internal voltage generator of a semiconductor memory device generates pumping voltages (VPP, VBB, etc.) as internal voltages, which is capable of improving a charge pumping scheme. The internal voltage generator includes a plurality of charge pumping units for generating a pumping voltage by performing a charge pumping operation according to a plurality of pumping enable signals, and a pumping controller for controlling a number of the pumping enable signals to be activated according to a level of a fed-back pumping voltage. | 07-02-2009 |
Jeong-Soo Kim, Kyoungki-Do KR
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20090152727 | BONDING PAD FOR ANTI-PEELING PROPERTY AND METHOD FOR FABRICATING THE SAME - A bonding pad includes a conductive layer formed over an insulation layer, and a dummy pattern penetrating the insulation layer and stuck in the conductive layer, wherein a bonding process is performed. | 06-18-2009 |
20120013010 | BONDING PAD FOR ANTI-PEELING PROPERTY AND METHOD FOR FABRICATING THE SAME - A bonding pad includes a conductive layer formed over an insulation layer, and a dummy pattern penetrating the insulation layer and stuck in the conductive layer, wherein a bonding process is performed. | 01-19-2012 |
Jeong Tae Kim, Kyoungki-Do KR
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20100038788 | MULTI-LAYERED METAL LINE OF SEMICONDUCTOR DEVICE FOR PREVENTING DIFFUSION BETWEEN METAL LINES AND METHOD FOR FORMING THE SAME - A multi-layered metal line of a semiconductor device includes a semiconductor substrate; a lower metal line formed on the semiconductor substrate and recessed on a surface thereof; an insulation layer formed on the semiconductor substrate including the lower metal line and having a damascene pattern for exposing a recessed portion of the lower metal line and for delimiting an upper metal line forming region; a glue layer formed on a surface of the recessed portion of the lower metal line; a first diffusion barrier formed on the glue layer to fill the recessed portion of the lower metal line; a second diffusion barrier formed on the glue layer and the first diffusion barrier; a third diffusion barrier formed on the second diffusion barrier and a surface of the damascene pattern; and an upper metal line formed on the third diffusion barrier to fill the damascene pattern. | 02-18-2010 |
20100193956 | MULTI-LAYER METAL WIRING OF SEMICONDUCTOR DEVICE PREVENTING MUTUAL METAL DIFFUSION BETWEEN METAL WIRINGS AND METHOD FOR FORMING THE SAME - A multi-layer metal wiring of a semiconductor device and a method for forming the same are disclosed. The multi-layer metal wiring of the semiconductor device includes a lower Cu wiring, and an upper Al wiring formed to be contacted with the lower Cu wiring, and a diffusion barrier layer interposed between the lower Cu wiring and the upper Al wiring. The diffusion barrier layer is formed of a W-based layer. | 08-05-2010 |
20120007240 | METAL WIRE FOR A SEMICONDUCTOR DEVICE FORMED WITH A METAL LAYER WITHOUT VOIDS THEREIN AND A METHOD FOR FORMING THE SAME - A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO | 01-12-2012 |
Jingwan Kim, Kyoungki-Do KR
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20110037165 | Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die - A semiconductor device is made by forming a heat spreader over a temporary carrier. A semiconductor die is mounted to the heat spreader. A first polymer layer is formed over the semiconductor die and heat spreader. A first conductive layer is formed over the first polymer layer. The first conductive layer is connected to the heat spreader and contact pads on the semiconductor die. A second polymer layer is formed over the first conductive layer. A second conductive layer is formed over the second polymer layer. The second conductive layer is electrically connected to the first conductive layer. Bumps are formed through a solder masking layer on the second conductive layer. The temporary carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first and second conductive layers. | 02-17-2011 |
20110095403 | Semiconductor Device and Method of Forming a Shielding Layer over a Semiconductor Die Disposed in a Cavity of an Interconnect Structure and Grounded through the Die TSV - A semiconductor device has an interconnect structure with a cavity formed partially through the interconnect structure. A first semiconductor die is mounted in the cavity. A first TSV is formed through the first semiconductor die. An adhesive layer is deposited over the interconnect structure and first semiconductor die. A shielding layer is mounted over the first semiconductor die. The shielding layer is secured to the first semiconductor die with the adhesive layer and grounded through the first TSV and interconnect structure to block electromagnetic interference. A second semiconductor die is mounted to the shielding layer and electrically connected to the interconnect structure. A second TSV is formed through the second semiconductor die. An encapsulant is deposited over the shielding layer, second semiconductor die, and interconnect structure. A slot is formed through the shielding layer for the encapsulant to flow into the cavity and cover the first semiconductor die. | 04-28-2011 |
20110278705 | Semiconductor Device and Method of Mounting Semiconductor Die to Heat Spreader on Temporary Carrier and Forming Polymer Layer and Conductive Layer Over the Die - A semiconductor device is made by forming a heat spreader over a carrier. A semiconductor die is mounted over the heat spreader with a first surface oriented toward the heat spreader. A first insulating layer is formed over the semiconductor die and heat spreader. A via is formed in the first insulating layer. A first conductive layer is formed over the first insulating layer and connected to the heat spreader through the via and to contact pads on the semiconductor die. The heat spreader extends from the first surface of the semiconductor die to the via. A second insulating layer is formed over the first conductive layer. A second conductive layer is electrically connected to the first conductive layer. The carrier is removed. The heat spreader dissipates heat from the semiconductor die and provides shielding from inter-device interference. The heat spreader is grounded through the first conductive layer. | 11-17-2011 |
20120038053 | Semiconductor Device and Method of Forming FO-WLCSP Having Conductive Layers and Conductive Vias Separated by Polymer Layers - A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure. | 02-16-2012 |
20130075919 | Semiconductor Device and Method of Forming FO-WLCSP Having Conductive Layers and Conductive Vias Separated by Polymer Layers - A Fo-WLCSP has a first polymer layer formed around a semiconductor die. First conductive vias are formed through the first polymer layer around a perimeter of the semiconductor die. A first interconnect structure is formed over a first surface of the first polymer layer and electrically connected to the first conductive vias. The first interconnect structure has a second polymer layer and a plurality of second vias formed through the second polymer layer. A second interconnect structure is formed over a second surface of the first polymer layer and electrically connected to the first conductive vias. The second interconnect structure has a third polymer layer and a plurality of third vias formed through the third polymer layer. A semiconductor package can be mounted to the WLCSP in a PoP arrangement. The semiconductor package is electrically connected to the WLCSP through the first interconnect structure or second interconnect structure. | 03-28-2013 |
Jong Man Kim, Kyoungki-Do KR
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20080272431 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE WITH VARYING RECESS WIDTH FOR INCREASED CHANNEL LENGTH - A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess. | 11-06-2008 |
Jong Sik Kim, Kyoungki-Do KR
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20080272431 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE WITH VARYING RECESS WIDTH FOR INCREASED CHANNEL LENGTH - A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess. | 11-06-2008 |
Keun-Kook Kim, Kyoungki-Do KR
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20080250262 | Semiconductor memory device and method for generating internal control signal - A semiconductor memory device includes: a command input unit configured to receive a plurality of external commands in synchronization with a rising edge of an internal clock to generate a plurality of pre-control signals; an output control signal generating unit configured to receive the plurality of external commands to generate an output control signal in synchronization with a falling edge of the internal clock prior to the rising edge of the internal clock; an address input unit configured to receive a plurality of addresses to output a plurality of internal addresses in response to the output control signal; and an internal driving signal generating unit configured to receive the plurality of internal addresses and the plurality of pre-control signals to generate a plurality of internal driving control signals. | 10-09-2008 |
Kwan-Dong Kim, Kyoungki-Do KR
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20080284527 | PHASE LOCKED LOOP AND METHOD FOR OPERATING THE SAME - A phase locked loop can reduce a locking time, thereby efficiently reducing power in a locking operation. The phase locked loop includes a phase detector, a control voltage generator, a voltage controlled oscillator and a start-up driver. The phase detector detects a phase difference between a reference clock and a feedback clock to generate a detection signal corresponding to the detected phase difference. The control voltage generator generates a control voltage having a voltage level corresponding to the detection signal. The voltage controlled oscillator generates an internal clock having a frequency corresponding to a voltage level of the control voltage. The start-up driver drives a control voltage terminal to a predefined start-up level in response to a start-up level multiplex signal corresponding to a frequency of the reference clock prior to activation of the voltage controlled oscillator. | 11-20-2008 |
20090273985 | SEMICONDUCTOR DEVICE HAVING MULTIPLE I/O MODES - Semiconductor device having multiple I/O modes. The device includes a data buffer configured to receive data; a strobe input buffer configured to receive a data strobe signal, a phase controller configured to shift a phase of the data strobe signal by different numbers of degrees, including 0 degrees, according to input modes and a data detector configured to detect the data in response to the data strobe signal output from the phase controller. | 11-05-2009 |
Kwi Dong Kim, Kyoungki-Do KR
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20090016125 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device can determine whether control for supplying termination resistances is normally performed or not by applying a test signal. The device includes a termination resistance driving controller configured to receive a plurality of termination resistance setting signals in synchronization with an external clock and a delay locked loop (DLL) clock to output a plurality of pre-driving signals and a plurality of termination resistance driving signals for a predetermined time. A data pre-driver is configured to output data in synchronization with the external clock. A test driving detector is configured to drive output nodes to a predetermined voltage level in response to a test signal and the plurality of pre-driving signals. A data output buffer is configured to apply termination resistances corresponding to the plurality of termination resistance driving signals to input/output pads, and output the data from the output nodes to the input/output pads. | 01-15-2009 |
20090323449 | CIRCUIT AND METHOD FOR CONTROLLING SELF-REFRESH CYCLE - The present invention relates to a circuit and a method for controlling a self-refresh cycle of a dynamic random access memory or DRAM. A cell voltage is directly detected so that a self-refresh cycle can be variably controlled. Detectors each detecting whether or not a voltage charged into a capacitor of a detection cell drops to or below a reference voltage and outputs a detection signal. A pulse generator generates a self-refresh pulse while being linked with an enabled detection signal of the plurality of detectors. A self-refresh cycle can be variably controlled and set to be suitable for the charging capacity of a cell. The detection cell is adapted to the change of the charging capacity of the cell in accordance with a change in temperature. | 12-31-2009 |
Kwi Wook Kim, Kyoungki-Do KR
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20090219777 | MULTI-CHIP ASSEMBLY AND METHOD FOR DRIVING THE SAME - Disclosed are a multi-chip assembly and a method for driving the same. The multi-chip assembly includes a first chip designed with a first device driven by a first power source and a second chip designed with a second device driven by a second power source. A power applying section applies first power to the first device of the first chip and a power converting section converts the first power to second power upon receiving the first power from the power applying section and applies the second power to the second device of the second chip. It is possible to provide the multi-chip assembly in the form of a package fabricated by stacking chips designed with mutually different devices driven through a single power source. | 09-03-2009 |
Mi-Hye Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090146694 | CIRCUIT AND METHOD FOR PREVENTING BANG-BANG ERROR, CALIBRATION CIRCUIT INCLUDING THE CIRCUIT, AND ANALOG-TO-DIGITAL CONVERTER INCLUDING THE CIRCUIT - A circuit including a comparing unit for comparing a target voltage with a stepwise-varying tracking voltage, a counting unit for counting a code according to the comparison result of the comparing unit and a control signal generating unit for generating a signal for controlling a counting operation of the counting unit. | 06-11-2009 |
20090273380 | DELAY LOCKED LOOP CIRCUIT AND METHOD THEREOF - A delayed locked loop (DLL) circuit for reducing power consumption in updating a delay value of an external clock after locking. The DLL circuit includes a phase comparator for comparing a phase of a feedback clock and a phase of an external clock, and a delay unit for delaying an external clock in response to a comparison signal from the phase comparison. A replica unit receives the delayed external clock and outputs the feedback clock. A toggling controller disables toggling of the delayed external clock that is inputted to the replica unit for a predetermined time at a regular interval after locking. | 11-05-2009 |
Myung-Jin Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090116303 | Semiconductor memory device - A semiconductor memory device can generate an under_drive voltage that maintains a predetermined level stably even in case of a change in the operation mode of the semiconductor memory device or the level of an external power supply voltage. The semiconductor memory device, which includes an external power supply voltage detector configured to detect a level of an external power supply voltage to generate the external voltage detection signal, an under_drive voltage detector configured to detect a voltage level of an under_drive voltage to generate the under_drive voltage detection signal, and an under_drive voltage generator configured to generate the under_drive voltage in response to the under_drive voltage detection signal with a variable driving force in response to the external voltage detection signal. | 05-07-2009 |
Saeng-Hwan Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20080235557 | Semiconductor memory device - A semiconductor memory device includes: a plurality of error correction code (ECC) groups, each ECC group including plural data configured to be read from and written to the semiconductor memory device and plural parity data configured to correct an error of the plural data, wherein at least one of the ECC groups includes the plural data allocated in dispersed memory cells, not adjacent. | 09-25-2008 |
20100188914 | SELF REFRESH OPERATION OF SEMICONDUCTOR MEMORY DEVICE - A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires. | 07-29-2010 |
20100188915 | SELF REFRESH OPERATION OF SEMICONDUCTOR MEMORY DEVICE - A method for driving a semiconductor memory device, includes initializing first data corresponding to a refresh time of each corresponding row included in a cell array; storing second data corresponding to column data included in the first row after entering a self refresh mode; setting the first data corresponding to the first row by detecting the refresh time of the first row while performing refresh operations on the other rows in the cell array according to a refresh period selected based on the corresponding first data for predetermined refresh cycles, wherein the refresh operation is not performed on the first row during the predetermined refresh cycles; restoring the second data to the first row; and repeating the above steps for the other rows to thereby set the corresponding first data until the setting step is completed for all rows or the self refresh mode expires. | 07-29-2010 |
Seung-Lo Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090059694 | Semiconductor memory device - A semiconductor memory device includes: a reference signal delay unit configured to delay a reference signal for a predetermined operation to output a delayed reference signal; an address delay unit configured to delay a bank address to output a delayed bank address; and a decoding unit configured to receive the delayed reference signal to output a signal for determining a timing of a predetermined operation on a bank selected by the delayed bank address. | 03-05-2009 |
20090257290 | LOW POWER SHIFT REGISTER AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A shift register includes a shift circuit configured to shift an input signal in synchronization with a shift clock to output an output signal of the shift register, and a clock control circuit configured to enable the shift clock in response to the input signal and disable the shift clock in response to the output signal of the shift register. | 10-15-2009 |
20100238748 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes: a reference signal delay unit configured to delay a reference signal for a predetermined operation to output a delayed reference signal; an address delay unit configured to delay a bank address to output a delayed bank address; and a decoding unit configured to receive the delayed reference signal to output a signal for determining a timing of a predetermined operation on a bank selected by the delayed bank address. | 09-23-2010 |
20110058429 | LOW POWER SHIFT REGISTER AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A shift register includes a shift circuit configured to shift an input signal in synchronization with a shift dock to output an output signal of the shift register, and a clock control circuit configured to enable the shift clock in response to the input signal and disable the shift clock in response to the output signal of the shift register. | 03-10-2011 |
Sunmi Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20100148353 | Double-Sided Semiconductor Device and Method of Forming Top-Side and Bottom-Side Interconnect Structures - A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected. | 06-17-2010 |
20110121432 | Semiconductor Device and Method of Forming Holes In Substrate to Interconnect Top Shield and Ground Shield - A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die. | 05-26-2011 |
20120153452 | Double-Sided Semiconductor Device and Method of Forming Top-Side and Bottom-Side Interconnect Structures - A semiconductor device is made by forming a first active device on a first side of a semiconductor wafer. A first insulating layer is formed over the first side of the wafer. A first conductive layer is formed over the first insulating layer. A first interconnect structure is formed over the first insulating layer and first conductive layer. A temporary carrier is mounted to the first interconnect structure. A second active device is formed on a second side of the semiconductor wafer. A second insulating layer is formed over the second side of the wafer. A second conductive layer is formed over the second insulating layer. A second interconnect structure is formed over the second insulating layer and second conductive layer. The temporary carrier is removed, leaving a double-sided semiconductor device. The double-sided semiconductor device is enclosed in a package with the first and second interconnect structures electrically connected. | 06-21-2012 |
20120292751 | Semiconductor Device and Method of Forming Holes in Substrate to Interconnect Top Shield and Ground Shield - A semiconductor device includes a multi-layer substrate. A ground shield is disposed between layers of the substrate and electrically connected to a ground point. A plurality of semiconductor die is mounted to the substrate over the ground shield. The ground shield extends beyond a footprint of the plurality of semiconductor die. An encapsulant is formed over the plurality of semiconductor die and substrate. Dicing channels are formed in the encapsulant, between the plurality of semiconductor die, and over the ground shield. A plurality of metal-filled holes is formed along the dicing channels, and extends into the substrate and through the ground shield. A top shield is formed over the plurality of semiconductor die and electrically and mechanically connects to the ground shield through the metal-filled holes. The top and ground shields are configured to block electromagnetic interference generated with respect to an integrated passive device disposed in the semiconductor die. | 11-22-2012 |
Tae-Yun Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20100033222 | PULSE CONTROL DEVICE - A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells. | 02-11-2010 |
20110193604 | PULSE CONTROL DEVICE - A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells. | 08-11-2011 |
Yong-Ju Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090015303 | Delay cell of voltage controlled delay line using digital and analog control scheme - Provided is an analog/digital control delay locked loop (DLL). The DLL includes a phase detector for detecting a phase difference between an input clock signal and a feedback signal to provide an up detection signal or a down detection signal, a charge pump for generating an adjusted output current based on the up or down signals, a loop filter for low pass-filtering the output current to produce an analog control voltage, a voltage controlled delay Line (VCDL) for receiving the analog control voltage, the input clock signal and a digital code, and delaying the input clock signal based on the analog control voltage and the digital code to provide an output clock signal, a delay replica modeling unit formed by replica of delay factors for producing the feedback signal depending on the output clock signal, and a digital code generator for generating the digital code. | 01-15-2009 |
Yong-Ki Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090066363 | Semiconductor memory device - A semiconductor memory device includes a code channel for outputting a plurality of code signals based on a code control signal inputted from an external source; a termination resistor decoder for decoding a chip selection signal, an on die termination (ODT) control signal and the plurality of code signals and outputting a plurality of selection signals based on decoded signals; and an ODT block for providing an output data pad with impedance of a termination resistor which is selected in response to the plurality of selection signals. | 03-12-2009 |
20090086564 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device is capable of securing margins of setup/hold times for receiving addresses. The device includes an address buffering unit, a data input/output line, a selecting unit and an output circuit. The address buffering unit buffers input addresses. The data input/output line transfers data with a cell array. The selecting unit selectively outputs the buffered addresses transferred from the address buffering unit and the data transferred through the data input/output line according to modes of the device. The output circuit latches an output of the selecting unit to be outputted from the device. | 04-02-2009 |
20090116601 | Clock data recovery circuit and method for operating the same - A clock data recovery (CDR) circuit occupies a small area required in a high-integration semiconductor device, electronic device and system and is easy in design modification. The CDR circuit includes a digital filter configured to filter phase comparison result signals received during predetermined periods and output control signals, a driver configured to control the digital filter by adjusting the predetermined periods, and an input/output circuit configured to recognize an input and output of data and clock in response to the control signals. | 05-07-2009 |
20100149891 | SEMICONDUCTOR MEMORY DEVICE INCLUDING RESET CONTROL CIRCUIT - A semiconductor memory device for use in a system includes a reset signal generator for generating a reset entry signal and a reset exit signal respectively in response to a start timing and a termination timing of a reset operation of the system; and a reset controller for performing a precharge operation in response to the reset entry signal and a refresh operation in response to the reset exit signal. | 06-17-2010 |
20120033507 | ON DIE THERMAL SENSOR OF SEMICONDUCTOR MEMORY DEVICE - An on die thermal sensor (ODTS) of a semiconductor memory device includes a high voltage generating unit for generating a high voltage having a voltage level higher than that of a power supply voltage of the semiconductor memory device; and a thermal information output unit for sensing and outputting a temperature as a thermal information code, wherein the thermal information output unit uses the high voltage as its driving voltage. | 02-09-2012 |
Youngchul Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20100065948 | Semiconductor Device and Method of Forming a Fan-In Package-on-Package Structure Using Through-Silicon Vias - A semiconductor device is made by providing a first semiconductor die having a plurality of contact pads formed over a first surface of the first semiconductor die and having a plurality of through-silicon vias (TSVs) formed within the first semiconductor die. A second semiconductor die is mounted to the first surface of the first semiconductor die using a plurality of solder bumps. At least one of the solder bumps is in electrical communication with the TSVs in the first semiconductor die. The second semiconductor die is mounted to a printed circuit board (PCB) using an adhesive material. A plurality of solder bumps is formed to connect the contact pads of the first semiconductor die to the PCB. An encapsulant is deposited over the first semiconductor die and the second semiconductor die. An interconnect structure is formed over a back surface of the PCB. | 03-18-2010 |
20140175639 | Semiconductor Device and Method of Simultaneous Molding and Thermalcompression Bonding - A semiconductor device has a semiconductor die disposed over a substrate. The semiconductor die and substrate are placed in a chase mold. An encapsulant is deposited over and between the semiconductor die and substrate simultaneous with bonding the semiconductor die to the substrate in the chase mold. The semiconductor die is bonded to the substrate using thermocompression by application of force and elevated temperature. An electrical interconnect structure, such as a bump, pillar bump, or stud bump, is formed over the semiconductor die. A flux material is deposited over the interconnect structure. A solder paste or SOP is deposited over a conductive layer of the substrate. The flux material and SOP provide temporary bond between the semiconductor die and substrate. The interconnect structure is bonded to the SOP. Alternatively, the interconnect structure can be bonded directly to the conductive layer of the substrate, with or without the flux material. | 06-26-2014 |
20140175640 | Semiconductor Device and Method of Bonding Semiconductor Die to Substrate in Reconstituted Wafer Form - A semiconductor device has a plurality of semiconductor die disposed over a carrier. An electrical interconnect, such as a stud bump, is formed over the semiconductor die. The stud bumps are trimmed to a uniform height. A substrate includes a bump over the substrate. The electrical interconnect of the semiconductor die is bonded to the bumps of the substrate while the semiconductor die is disposed over the carrier. An underfill material is deposited between the semiconductor die and substrate. Alternatively, an encapsulant is deposited over the semiconductor die and substrate using a chase mold. The bonding of stud bumps of the semiconductor die to bumps of the substrate is performed using gang reflow or thermocompression while the semiconductor die are in reconstituted wafer form and attached to the carrier to provide a high throughput of the flipchip type interconnect to the substrate. | 06-26-2014 |
20140175661 | Semiconductor Device and Method of Making Bumpless Flipchip Interconnect Structures - A semiconductor device includes a substrate with contact pads. A mask is disposed over the substrate. Aluminum-wettable conductive paste is printed over the contact pads of the substrate. A semiconductor die is disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure over the contact pads of the substrate. The contact pads include aluminum. Contact pads of the semiconductor die are disposed over the aluminum-wettable conductive paste. The aluminum-wettable conductive paste is reflowed to form an interconnect structure between the contact pads of the semiconductor die and the contact pads of the substrate. The interconnect structure is formed directly on the contact pads of the substrate and semiconductor die. The contact pads of the semiconductor die are etched prior to reflowing the aluminum-wettable conductive paste. An epoxy pre-dot to maintain a separation between the semiconductor die and substrate. | 06-26-2014 |
20140295618 | Methods of Manufacturing Flip Chip Semiconductor Packages Using Double-Sided Thermal Compression Bonding - Methods of producing a semiconductor package using dual-sided thermal compression bonding includes providing a substrate having an upper surface and a lower surface. A first device having a first surface and a second surface can be provided along with a second device having a third surface and a fourth surface. The first surface of the first device can be coupled to the upper surface of the substrate while the third surface of the second device can be coupled to the lower surface of the substrate, the coupling occurring simultaneously to produce the semiconductor package. | 10-02-2014 |
Youngjoon Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20120217640 | Semiconductor Device and Method of Forming Bump Structure with Insulating Buffer Layer to Reduce Stress on Semiconductor Wafer - A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad. | 08-30-2012 |
20130069239 | Semiconductor Device and Method of Forming Stacked Semiconductor Die and Conductive Interconnect Structure Through an Encapsulant - A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die. | 03-21-2013 |
20140319680 | Semiconductor Device and Method of Forming Bump Structure with Insulating Buffer Layer to Reduce Stress on Semiconductor Wafer - A semiconductor wafer has a plurality of semiconductor die with contact pads for electrical interconnect. An insulating layer is formed over the semiconductor wafer. A bump structure is formed over the contact pads. The bump structure has a buffer layer formed over the insulating layer and contact pad. A portion of the buffer layer is removed to expose the contact pad and an outer portion of the insulating layer. A UBM layer is formed over the buffer layer and contact pad. The UBM layer follows a contour of the buffer layer and contact pad. A ring-shaped conductive pillar is formed over the UBM layer using a patterned photoresist layer filled with electrically conductive material. A conductive barrier layer is formed over the ring-shaped conductive pillar. A bump is formed over the conductive barrier layer. The buffer layer reduces thermal and mechanical stress on the bump and contact pad. | 10-30-2014 |
20140322865 | Semiconductor Device and Method of Forming Stacked Semiconductor Die and Conductive Interconnect Structure Through an Encapsulant - A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die. | 10-30-2014 |
Yung-Ki Kim, Kyoungki-Do KR
Patent application number | Description | Published |
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20090116598 | Semiconductor memory device having data clock training circuit - A data clock frequency divider circuit includes a training decoder and a frequency divider. The training decoder outputs a clock alignment training signal, which is indicative of the start of a clock alignment training, in response to a command and an address of a mode register set. The frequency divider, which is reset in response to an output of the training decoder, receives an internal data clock to divide a frequency of the internal data clock in half. The data clock frequency divider circuit secures a sufficient operating margin so that a data clock and a system clock are aligned within a pre-set clock training operation time by resetting the data clock to correspond to a timing in which the clock training operation starts, thereby providing a clock training for a high-speed system. | 05-07-2009 |