Patent application number | Description | Published |
20080218559 | PIEZOELECTRIC DEVICE, PROCESS FOR PRODUCING THE SAME, AND LIQUID DISCHARGE DEVICE - A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals. | 09-11-2008 |
20110037812 | Columnar Structure Film and Method of Forming Same, Piezoelectric Element, Liquid Ejection Apparatus and Piezoelectric Ultrasonic Oscillator - The columnar structure film is formed on a surface of a substrate by vapor phase epitaxy, and is constituted of a plurality of columnar bodies extending in directions non-parallel to the surface of the substrate. In the columnar structure film, a relationship GS | 02-17-2011 |
20110074888 | Piezoelectric Actuator, Method of Driving Same, Liquid Ejection Apparatus and Piezoelectric Ultrasonic Osicllator - A method of driving a piezoelectric actuator including: a piezoelectric element containing a piezoelectric body having coercive field points on a negative field side and a positive field side respectively and having asymmetrical bipolar polarization—electric field hysteresis characteristics in which an absolute value of a coercive electric field on the negative field side and a coercive electric field value on the positive field side are mutually different, and a pair of electrodes for applying voltage to the piezoelectric body; and a diaphragm which externally transmits, as displacement, distortion produced in the piezoelectric body when the voltage is applied to the piezoelectric body, includes the step of driving the piezoelectric actuator between a positive drive voltage and a negative drive voltage in a range not exceeding the coercive electric field, from among the positive and negative coercive electric fields, which has the larger absolute value. | 03-31-2011 |
20110316393 | PIEZOELECTRIC FILM AND PIEZOELECTRIC DEVICE - A piezoelectric film includes crystals of a complex oxide having a perovskite structure with (100)-preferred orientation and represented as: Pb | 12-29-2011 |
20120038713 | PIEZOELECTRIC FILM AND METHOD OF MANUFACTURING SAME, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS - A piezoelectric film is constituted of a perovskite oxide represented as: Pb | 02-16-2012 |
20120250127 | MIRROR DRIVING DEVICE AND MIRROR DRIVING METHOD - A mirror driving device of an aspect can include: a mirror part; a pair of inner actuator parts; a pair of outer actuator parts; fixing and supporting parts; an inner actuator driving voltage supply part; and an outer actuator driving voltage supply part. A driving voltage with a frequency inducing oscillation of the mirror part in a rotating direction of the mirror part associated with resonance drive of the corresponding actuator parts can be supplied from one driving voltage supply part of the inner actuator driving voltage supply part and the outer actuator driving voltage supply part to the inner actuator parts or the outer actuator parts corresponding to the one driving voltage supply part. Simultaneously with the resonance drive, a driving voltage for inclining the mirror part without exciting resonance drive can be supplied from the other driving voltage supply part to corresponding actuator parts. | 10-04-2012 |
20120250130 | PIEZOELECTRIC ACTUATOR, VARIABLE CAPACITOR, AND OPTICAL DEFLECTION DEVICE - A piezoelectric actuator of the presently disclosed subject matter can include: a first actuator including a first piezoelectric driving part; and a second actuator including a second piezoelectric driving part. A central portion of the first actuator can be supported. The first actuator can be bent and deformed by applying a first driving voltage to the first piezoelectric driving part, so that both end portions of the first actuator can be displaced in a thickness direction of the first actuator. Both end portions of the second actuator can be coupled to the both end portions of the first actuator. The second actuator can be bent and deformed in the opposite direction to the first actuator by applying a second driving voltage to the second piezoelectric driving part, so that a central portion of the second actuator can be displaced in a thickness direction of the second actuator. | 10-04-2012 |
Patent application number | Description | Published |
20090057135 | SPUTTERING METHOD AND APPARATUS - The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate. | 03-05-2009 |
20090066188 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 03-12-2009 |
20100039481 | Film depositing apparatus, a film depositing method, a piezoelectric film, and a liquid ejecting apparatus - A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate. | 02-18-2010 |
20100039482 | MULTILAYER BODY, PIEZOELECTRIC ELEMENT, AND LIQUID EJECTING DEVICE - A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal. | 02-18-2010 |
20100066788 | PEROVSKITE-TYPE OXIDE FILM, PIEZOELECTRIC THIN-FILM DEVICE AND LIQUID EJECTING DEVICE USING PEROVSKITE-TYPE OXIDE FILM, AS WELL AS PRODUCTION PROCESS AND EVALUATION METHOD FOR PEROVSKITE-TYPE OXIDE FILM - Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm | 03-18-2010 |
20100090154 | FILM DEPOSITING APPARATUS, A FILM DEPOSITING METHOD, A PIEZOELECTRIC FILM, AND A LIQUID EJECTING APPARATUS - A film depositing apparatus comprises: a process chamber; a gas supply source for supplying the process chamber with gases necessary for film deposition; an evacuating unit for evacuating the interior of the process chamber; a target holder placed within the process chamber for holding a target; a substrate holder for holding a deposition substrate within the process chamber in a face-to-face relation with the target holder; a power supply unit for supplying electric power between the target holder and the substrate holder to generate a plasma within the process chamber; and an anode provided between the target holder and the substrate holder so as to surround the outer periphery of the side of the substrate holder that faces the target holder, the anode comprising at least one plate member for capturing ions in the plasma generated within the process chamber. | 04-15-2010 |
20110041304 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 02-24-2011 |
20130063800 | MIRROR DRIVING APPARATUS, METHOD OF DRIVING SAME AND METHOD OF MANUFACTURING SAME - An aspect of the present invention provides a mirror driving apparatus, including: a mirror section having a reflecting surface which reflects light; a pair of piezoelectric actuator sections arranged on either side of the mirror section; coupling sections which respectively connect one end of each of the piezoelectric actuator sections to an end portion of the mirror section which is distant from an axis of rotation of the mirror section in a direction along the reflecting surface and perpendicular to the axis of rotation; a fixing section which supports another end of each of the piezoelectric actuator sections; and a perpendicular movement suppressing structure which suppresses translational motion of the axis of rotation of the mirror section in a direction perpendicular to the reflecting surface, one end of the perpendicular movement suppressing structure being connected to the fixing section and another end thereof being connected to the mirror section. | 03-14-2013 |
20130208330 | MIRROR DRIVING DEVICE AND METHOD OF CONTROLLING THE DEVICE - A mirror driving device can include: a mirror part having a reflection surface configured to reflect light; mirror support parts formed at portions of the mirror part diagonal to each other; and a first actuator and a second actuator placed so as to surround the mirror part, wherein the first actuator and the second actuator each have a structure in which a plurality of first piezoelectric cantilevers with a longitudinal direction oriented to a direction of a first axis and a plurality of second piezoelectric cantilevers with a longitudinal direction oriented to a second axis are coupled together so as to be folded, and each of the first actuator and the second actuator has one end connected to the mirror part via a relevant one of the mirror support parts and another end connected to a fixing part near the mirror support part to which the one end is coupled. | 08-15-2013 |
20150022871 | MIRROR DRIVE DEVICE AND DRIVING METHOD THEREOF - In a mirror drive device, a first actuator section and a second actuator section are arranged on both sides of a mirror supporting section that supports a mirror section so as to sandwich the mirror supporting section. The upper electrode of a first actuator section includes a first electrode section and a second electrode section, and an upper electrode of a second actuator section includes a third electrode section and a fourth electrode section. The arrangements of the electrode sections correspond to stress distribution of principal stresses in the piezoelectric body in resonant mode vibration, and in a piezoelectric body portion that corresponds to positions of the first electrode section and the third electrode section and a piezoelectric body portion that corresponds to positions of the second electrode section and the fourth electrode section, stresses in opposite directions to each other are generated. | 01-22-2015 |
Patent application number | Description | Published |
20080248265 | PATTERNED INORGANIC FILM, PIEZOELECTRIC DEVICE, AND PROCESS FOR PRODUCING THE SAME - An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas. | 10-09-2008 |
20090072673 | PIEZOELECTRIC DEVICE, AND LIQUID DISCHARGE DEVICE USING THE PIEZOELECTRIC DEVICE - A piezoelectric device having a piezoelectric film formed over a substrate through an electrode by vapor phase deposition using plasma, and constituted by columnar crystals of one or more perovskite oxides Pb(Ti | 03-19-2009 |
20090255804 | PIEZOELECTRIC FILM FORMING METHOD - When forming a piezoelectric film of a Pb containing perovskite-type oxide on a substrate by sputtering, forming the film under a film forming condition in which a film forming temperature Ts(° C.) and a surface potential Vsub of the substrate satisfy Formulae (1) and (2) below respectively. | 10-15-2009 |
20100040770 | PATTERNED INORGANIC FILM, PIEZOELECTRIC DEVICE, AND PROCESS FOR PRODUCING THE SAME - An inorganic film formed of an inorganic material on a metal film having a surface including surface-oxidized areas. The surface-oxidized areas are surface oxidized to different degrees. For example, the surface-oxidized areas are one or more lowly-surface-oxidized areas and one or more highly-surface-oxidized areas. The inorganic film includes regions which are respectively formed on the surface-oxidized areas, and the regions have different crystal structures according to the different degrees of surface oxidation. For example, a patterned inorganic film constituted by one or more protruding portions arranged on one or more lowly-surface-oxidized areas of the surface of the metal film can be produced by removing the portions of the inorganic film formed on highly-surface-oxidized areas. | 02-18-2010 |
20100123368 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 05-20-2010 |
20100208005 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face to each other, the film is formed with surrounding the substrate with a wall surface having the constituent elements of the target adhering thereto, and applying a physical treatment to the wall surface to cause the components adhering to the wall surface to be released into the film formation atmosphere. | 08-19-2010 |
20100214369 | Piezoelectric film, method for forming piezoelectric film, piezoelectric device and liquid discharge device - A piezoelectric film of the present invention has a surface roughness value P-V of not more than 170.0 nm, which is defined by a difference between a maximum height (peak value P) and a minimum height (valley value V) on a film surface, a piezoelectric constant d | 08-26-2010 |
20110121096 | PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS - A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. | 05-26-2011 |
20110163181 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID DISCHARGE DEVICE - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition technique using plasma with placing the substrate and the target to face each other, film formation is carried out with controlling variation of plasma potential Vs (V) in a plasma space in an in-plane direction of the substrate to be within ±10V at a distance of 2-3 cm from a surface of the target toward the substrate. | 07-07-2011 |
20110215679 | PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID EJECTION APPARATUS, AND METHOD OF PRODUCING PIEZOELECTRIC FILM - A piezoelectric film is formed on a surface of a substrate by a vapor deposition process without generating grain boundaries which are substantially parallel to the surface of the substrate and are caused by lamination. A normal of a (100) plane of each of crystals constituting the piezoelectric film is inclined from a normal of the surface of the substrate by an angle of not smaller than 6° and not larger than 36°. | 09-08-2011 |
20110316937 | PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS - A piezoelectric film has a columnar crystal structure constituted of a plurality of columnar crystals, and contains a perovskite oxide represented by the following formula (P) as a main component: | 12-29-2011 |
20120102696 | PIEZOELECTRIC DEVICE, PROCESS FOR PRODUCING THE SAME, AND LIQUID DISCHARGE DEVICE - A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals. | 05-03-2012 |
20120193225 | FILM FORMATION METHOD, FILM FORMATION DEVICE, PIEZOELECTRIC FILM, PIEZOELECTRIC DEVICE, LIQUID DISCHARGE DEVICE AND PIEZOELECTRIC ULTRASONIC TRANSDUCER - When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate. | 08-02-2012 |