Patent application number | Description | Published |
20090090617 | Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films - An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment. | 04-09-2009 |
20100213960 | Probe Card Test Apparatus And Method - A probe card analyzer mounts on a probe card in a wafer prober and a use a fixture in the wafer probe and switch electronics in place of an ATE head. Methods of testing can confirm that probe cards are operating within their specifications over large temperature ranges and the mechanical force ranges seen in real manufacturing environments. This reduces the cost and improves the accuracy and speed of analyzing probe cards and improves diagnosing problems with probe cards. | 08-26-2010 |
20130186746 | Method and Apparatus for Producing Controlled Stresses and Stress Gradients in Sputtered Films - An enhanced sputtered film processing system and associated method comprises one or more sputter deposition sources each having a sputtering target surface and one or more side shields extending therefrom, to increase the relative collimation of the sputter deposited material, such as about the periphery of the sputtering target surface, toward workpiece substrates. One or more substrates are provided, wherein the substrates have a front surface and an opposing back surface, and may have one or more previously applied layers, such as an adhesion or release layer. The substrates and the deposition targets are controllably moved with respect to each other. The relatively collimated portion of the material sputtered from the sputtering target surface travels beyond the side shields and is deposited on the front surface of the substrates. The increase in relative collimation results in deposited films with desirable properties including but not limited to high levels of both readily controllable compressive stress and mechanical integrity without the use of ion bombardment. | 07-25-2013 |
Patent application number | Description | Published |
20080246500 | HIGH DENSITY INTERCONNECT SYSTEM HAVING RAPID FABRICATION CYCLE - An improved interconnection system and method is described, such as for connectors, socket assemblies and/or probe card systems. An exemplary system comprises a probe card interface assembly (PCIA) for establishing electrical connections to a semiconductor wafer mounted in a prober. The PCIA comprises a motherboard parallel to the semiconductor wafer having an upper surface and an opposing lower planar mounting surface, a reference plane defined by a least three points located between the lower surface of the motherboard and the wafer, at least one component located below the motherboard mounting surface, and a mechanism for adjusting the planarity of the reference plane with respect to the wafer. A probe chip having a plurality of spring probes extending there from is mountable and demountable from the PCIA, without the need for further planarity adjustment. The interconnection structures and methods preferably provide improved fabrication cycles. | 10-09-2008 |
20090153165 | High Density Interconnect System Having Rapid Fabrication Cycle - An improved interconnection system and method is described, such as for connectors, socket assemblies and/or probe card systems. An exemplary system comprises a probe card interface assembly (PCIA) for establishing electrical connections to a semiconductor wafer mounted in a prober. The PCIA comprises a motherboard parallel to the semiconductor wafer having an upper surface and an opposing lower planar mounting surface, a reference plane defined by a least three points located between the lower surface of the motherboard and the wafer, at least one component located below the motherboard mounting surface, and a mechanism for adjusting the planarity of the reference plane with respect to the wafer. A probe chip having a plurality of spring probes extending there from is mountable and demountable from the PCIA, without the need for further planarity adjustment. The interconnection structures and methods preferably provide improved fabrication cycles. | 06-18-2009 |