Patent application number | Description | Published |
20080212384 | SENSE AMP CIRCUIT, AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME - A differential input circuit receives differential input signals at a pair of differential input terminals and produces a pair of first differential output signals. A sensing circuit senses at least one of the pair of first differential output signals reaching a certain voltage and provides an activation signal. A latch-type amplifier provides a pair of second differential output signals when activated in accordance with the activation signal. A cutoff circuit establishes connection between the differential input circuit and the latch-type amplifier and breaks connection between the differential input circuit and the latch-type amplifier in accordance with the activation signal. | 09-04-2008 |
20080237673 | SEMICONDUCTOR DEVICE, CHARGE PUMPING CIRCUIT, AND SEMICONDUCTOR MEMORY CIRCUIT - A semiconductor device comprising:
| 10-02-2008 |
20080246535 | SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE - A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors. | 10-09-2008 |
20080316852 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprises an array of memory cells each including an antifuse to store information based on a variation in resistance in accordance with destruction of the insulator in the antifuse. The antifuse includes a semiconductor substrate, a first conduction layer formed in the surface of the semiconductor substrate, a first electrode provided on the first conduction layer to be given a first voltage, a second conduction layer provided on the semiconductor substrate with the insulator interposed therebetween, and a second electrode provided on the second conduction layer to be given a second voltage different from the first voltage. The first electrode or the second electrode is formed of a metal silicide. | 12-25-2008 |
20090201076 | SEMICONDUCTOR CHARGE PUMP USING MOS (METAL OXIDE SEMICONDUCTOR) TRANSISTOR FOR CURRENT RECTIFIER DEVICE - A semiconductor charge pump includes a plurality of P-channel MOS transistors being connected in series, a plurality of first pumping capacitors one electrode of each of which is connected to a connection point of each of the P-channel MOS transistors, a clock signal generating circuit which generates first and second clock signals whose phases are different from each other by 180 degrees, the first and second clock signals being alternately supplied to the other electrodes of the first pumping capacitors. The semiconductor charge pump further includes a plurality of dynamic level converter circuits each including a resistor element and a second pumping capacitor and connected to each of gates of the P-channel MOS transistors. | 08-13-2009 |
20100110750 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - The row decoder receives writing instruction signal and reading instruction signal to selectively activate one of the word lines according to an input state of row address signals. The data buffer receives a data input signal when the writing instruction signal is received, and drives corresponding one of the bit lines and amplifies a minute reading signal transmitted to one of the bit lines to output a data output signal when the reading instruction signal is received. | 05-06-2010 |
20100182819 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device comprising: a memory cell array in which two bit lines are provided to each one bit of input data, and memory cells each including an anti-fuse element are arranged at an intersection point between one of the two bit lines and an even address word line, and an intersection point between the other one of the two bit lines and an odd address word line, respectively; a plurality of booster circuits which are arranged in a plurality of memory banks, respectively, and each of which generates a write voltage and a read voltage to be supplied to a corresponding one of the anti-fuse elements of the respective memory banks, each of the memory banks obtained by dividing the memory cell array; a booster circuit controller to issue an instruction to generate the write voltage and the read voltage to the plurality of booster circuits; a word line selector to activate a different word line at the time of writing from one to be activated at the time of reading, with respect to the same address value of an address signal; a write bit line selector to select bit lines one by one from the memory banks, respectively, at the time of writing, the bit lines performing writing simultaneously; and a read bit line selector to select a bit line at the time of reading, the bit line outputting data. | 07-22-2010 |
20100182858 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PROGRAMMING - A nonvolatile semiconductor memory device includes a memory cell, a precharge control circuit, a power supply circuit, a bit line driver, a word line driver, a first multiplexer, and a second multiplexer. The memory cell includes an anti-fuse storage element and a selection transistor. Before data are written into the anti-fuse storage element of the memory cell, the anti-fuse storage element is set up in a precharged state by the precharge control circuit, the bit line driver, the word line driver, the first multiplexer, and the second multiplexer. | 07-22-2010 |
20100195410 | Semiconductor memory device having shift registers - A semiconductor memory device includes n stages of memory cell units, sense amplifier units, and shift registers. N units of the shift registers are connected to one another on the left end sides. The signal processing units and the reversed signal processing units are disposed adjacent to one another in each of the n units of the shift registers. The signal processing units located on the odd-numbered positions counted from the input end side are connected to one another. The reversed signal processing units located on the even-numbered positions counted from the input end side are connected to one another. The signal processing units located on the end opposite to the input end side are connected to the reversed signal processing units located on the end opposite to the input end side. Each of the signal processing units includes the logic circuit unit and the flip-flop while each of the reversed signal processing units includes the reversed logic circuit unit and the reversed flip-flop. | 08-05-2010 |
20100290303 | Semiconductor device - A semiconductor device includes a first terminal, a second terminal, and a fuse link that connects between the first terminal and the second terminal. The first terminal and the fuse link have a polysilicon layer doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer. The second terminal has a polysilicon layer not doped with an impurity ion and a layer containing a metal element laminated on the polysilicon layer, in at least a part of an end side connected to the fuse link. | 11-18-2010 |
20120242314 | DC-DC CONVERTER AND DIGITAL PULSE WIDTH MODULATOR - A DC-DC converter has a switching element, a lowpass filter, an oscillator, an AD converter, an error signal generator, a counter, a comparator, a selector configured to select one of the plurality of clock signals in accordance with a value of a lower side bit of the error signal in sync with a timing when the comparator detects coincidence, and a switching controller configured to control ON/OFF of the switching element in accordance with the clock signal selected by the selector. The selector selects one among the plurality of clock signals and a new clock signal generated by combining two or more clock signals comprising neighboring phases among the plurality of clock signals. | 09-27-2012 |
20140084882 | STEP-UP/DOWN TYPE POWER SUPPLY CIRCUIT - A first added signal that is acquired by adding a reference current signal that is in proportion to a current flowing through an inductance element, a slope compensation signal and a voltage difference signal that is in proportion to a difference between an input voltage and an output voltage and a second added signal that is acquired by adding the reference current signal and the slope compensation signal are compared with a difference signal of a voltage that is in proportion to the output voltage and a predetermined reference voltage, and pulse widths of driving pulse signals of a step-down switching circuit and a step-up switching circuit are controlled as a result of the comparison. | 03-27-2014 |