Patent application number | Description | Published |
20080212370 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM - A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside. | 09-04-2008 |
20080253192 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device includes a memory cell array having a plurality of blocks, a storage unit, a block replacement information register group, and a bad block flag register group. The storage unit includes a block replacement information registration area with which it is possible to register block replacement information, and a bad block information registration area with which it is possible to register bad block information. The block replacement information register group is set in accordance with the block replacement information read out of the storage unit during a boot sequence, and the bad block flag register group is set in accordance with both of the block replacement information and the bad block information read out of the storage unit during the boot sequence. | 10-16-2008 |
20080291716 | METHOD OF PROGRAMMING A NON-VOLATILE MEMORY DEVICE - A method of programming a non-volatile memory device with memory cells formed of variable resistance elements and disposed between word lines and bit lines, includes: previously charging a selected word line and a selected bit line together with a non-selected word line and a non-selected bit line up to a certain voltage; and further charging the selected word line and the non-selected bit line up to a program voltage higher than the certain voltage and a program-block voltage, respectively, and simultaneously discharging the selected bit line. | 11-27-2008 |
20090010039 | NON-VOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes: a memory cell array including memory cells each having a variable resistance element for nonvolatilely storing data identified by an electrically rewritable resistance value; a first data latch storing write and erase data to be written on a given group of memory cells of the memory cell array for a write and erase operation; and a second data latch storing reference data for performing a compensation operation of the given group to compensate write and erase disturbance accompanied by the write or erase operation. | 01-08-2009 |
20090052227 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR WRITING DATA THERETO - The present invention provides a method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series. According to the method, the second wirings are charged to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring. Then, a selected first wiring is charged to a voltage required for writing or erasing, after which a selected second wiring is discharged. | 02-26-2009 |
20090109728 | RESISTANCE CHANGE MEMORY DEVICE - A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R | 04-30-2009 |
20090122592 | NON-VOLATILE MEMORY DEVICE AND METHOD OF READING DATA THEREFROM - The present invention provides a method of reading data from a non-volatile memory device including word lines and bit lines that intersect each other and electrically rewritable memory cells that are arranged at intersections of the word lines and the bit lines and that respectively have variable resistive elements nonvolatily storing a resistances as data. The method includes: precharging a selected word line and unselected word lines to a first word line voltage and a selected bit line and unselected bit lines to a first bit line voltage; and reading data from a memory cell connected to the selected word line and the selected bit line by changing the voltage of the selected word line from the first word line voltage to a second word line voltage and changing the voltage of the selected bit line from the first bit line voltage to a second bit line voltage after the precharging. | 05-14-2009 |
20090154237 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes: a memory cell array with electrically rewritable and non-volatile memory cells arranged therein; a first register group configured to store control data used for controlling memory operations; an adjusting data storage area defined in the memory cell array so as to store adjusting data used for adjusting the control data; and a second register group configured to store the adjusting data read from the adjusting data storage area. | 06-18-2009 |
20090168523 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes: a memory cell array; a bad block position data register area defined in the memory cell array to store bad block position data; an address decoder circuit configured to select a block in the cell array; and bad block flag latches disposed in the address decoder circuit, bad block flags being set in the bad block flag latches in accordance with the bad block position data read out the bad block position data register area, wherein the bad block position data in the bad block position data register area are defined by such a bit position assignment scheme that one bit is assigned to one block under the condition that block positions in the cell array and column positions in one page are set in one-to-one correspondence. | 07-02-2009 |
20090190405 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A non-volatile semiconductor memory device includes: a memory cell array having electrically rewritable and non-volatile memory cells arranged; a data register circuit configured to hold write data to be written into the memory cell array; and an address decode circuit configured to decode a write address signal and control the write data-loading in the data register circuit, the address decode circuit being settable in such a multiple selection mode that the same write data is loaded in multiple registers in the data register circuit in correspondence to multiple addresses. | 07-30-2009 |
20090219750 | NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - A nonvolatile memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistive element; a line selector circuit operative to decode an address signal to select the first and second lines; and a control circuit operative to execute control on at least one of data erase, write and read for the memory cell connected between the first and second lines selected at the line selector circuit. The control circuit executes control based on one parameter selected among a plurality of parameters. The line selector circuit specifies the parameter based on a first address portion in the address signal and selects the first and second lines based on a second address portion in the address signal. | 09-03-2009 |
20090237979 | SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM - A semiconduct or memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag. | 09-24-2009 |
20100027341 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND NONVOLATILE SEMICONDUCTOR MEMORY SYSTEM - A memory may include word lines; bit lines; cells provided corresponding to intersections between the word lines and the bit lines; sense amplifiers detecting data; a column decoder selecting a certain bit line for the sense amplifiers to output read data or receive write data; a row decoder configured to select a certain word line; a charge pump supplying power to the sense amplifiers, the column decoder, and the row decoder; a logic circuit controlling the sense amplifiers, the column decoder, and the row decoder based on an address selecting the memory cells; a first power source input applying a voltage to the logic circuit; and a second power source input applying a voltage higher than a voltage of the first power source input to the charge pump, and to supply power to the charge pump at least at a data reading time and a data writing time. | 02-04-2010 |
20100034025 | NON-VOLATILE SEMICONDUCTOR STORAGE SYSTEM - There is provided a non-volatile memory having electrically rewritable non-volatile memory cells arranged therein. A controller controls operation at the non-volatile memory. The non-volatile memory comprises a status output section configured to output status information indicating a status of read operation, write operation or erase operation in the non-volatile memory cell. The controller comprises a control signal generating section configured to output a control signal for a certain operation in the non-volatile memory, and a control signal switching section configured to instruct the control signal generating section to switch the control signal based on the status information. | 02-11-2010 |
20100037007 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device includes a memory cell array in which memory cells having an electrically rewritable charge accumulation layer are arranged, a data writing/reading circuit that writes/reads data to/from the memory cell array in units of pages, a write state information storage circuit for nonvolatile storage of write state information indicating a data write state to the memory cell array by the data writing/reading circuit, and a control circuit that controls the data writing/reading circuit based on an access page address indicating a page from which data is about to be read by the data writing/reading circuit and write state information stored in the write state information storage circuit. | 02-11-2010 |
20100097858 | THREE-DIMENSIONALLY STACKED NONVOLATILE SEMICONDUCTOR MEMORY - A three-dimensionally stacked nonvolatile semiconductor memory of an aspect of the present invention including conductive layers stacked on a semiconductor substrate in such a manner as to be insulated from one another, a bit line which is disposed on the stacked conductive layers, a semiconductor column which extends through the stacked conductive layers, word lines for which the stacked conductive layers except for the uppermost and lowermost conductive layers are used and which have a plate-like planar shape, memory cells provided at intersections of the word lines and the semiconductor column, a register circuit which has information to supply a potential suitable for each of the word lines, and a potential control circuit which reads the information retained in the register circuit in accordance with an input address signal of a word line and which supplies a potential suitable for the word line corresponding to the address signal. | 04-22-2010 |
20100188920 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory device has an internal step-down power generation circuit and a memory circuit. The internal step-down power generation circuit generates a first internal power supply voltage from an external power supply voltage in an active state, and generates a second internal power supply voltage different from the first internal power supply voltage from the external power supply voltage in a standby state. The memory circuit includes a cell array containing a nonvolatile memory cell and a sense amplifier detecting data read from the cell array. The sense amplifier is supplied with a voltage generated by the internal step-down power generation circuit as an internal power supply voltage. | 07-29-2010 |
20100202228 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM - A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside. | 08-12-2010 |
20100238706 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - A nonvolatile semiconductor storage device includes a memory core that includes plural banks, the bank including plural memory cells and a data write circuit that supplies a bias voltage to the memory cell, the memory core being logically divided into plural pages, the page including a predetermined number of memory cells belonging to a predetermined number of banks; and a control circuit that controls the data write circuit to perform page write in each write unit including a predetermined number of memory cells, pieces of data being written in the page in the page write, the control circuit performing the page write by repeating a step including a program operation and a verify operation, the control circuit performing the program operation and the verify operation in a next step or later only to the write unit in which the data write is not completed in the verify operation. | 09-23-2010 |
20100277968 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array configured of at least a first portion and a second portion each including a plurality of memory cells each with a variable resistor which stores an electrically rewritable resistance value as a data, and a control circuit which controls a first operation including selected one of operations to erase, write and read the data in the first portion and a second operation including selected one of operations to erase, write and read the data in the second portion, the first operation and the second operation being performed in temporally overlapped relation with each other. | 11-04-2010 |
20110066900 | NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF - A non-volatile memory device including: a memory cell array storing an electrically rewritable resistance value as data in a non-volatile manner; a first cache circuit configured to hold program data to be programmed in the cell array; a second cache circuit configured to hold preprogrammed data read from an area of the cell array; and a judging circuit configured to compare and check the program data with the preprogrammed data, and judge whether there are one or more disagreement bits therebetween or not. | 03-17-2011 |
20110069549 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM - A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside. | 03-24-2011 |
20110103135 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR WRITING DATA THERETO - The present invention provides a method for writing data to a non-volatile memory device having first wirings and second wirings intersecting one another and memory cells arranged at each intersection therebetween, each of the memory cells having a variable resistive element and a rectifying element connected in series. According to the method, the second wirings are charged to a certain voltage not less than a rectifying-element threshold value, prior to a rise in a selected first wiring. Then, a selected first wiring is charged to a voltage required for writing or erasing, after which a selected second wiring is discharged. | 05-05-2011 |
20110134681 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a plurality of memory layers arranged in multi layer, each memory layer including a cell array, the cell array containing a plurality of first parallel lines, a plurality of second parallel lines arranged crossing the first lines, and a plurality of memory cells connected at intersections of the first lines and the second lines; a pulse generator operative to generate pulses required for data access to the memory cell; and a control means operative to control the pulse generator such that the pulse output from the pulse generator has energy in accordance with the memory layer to which the access target memory cell belongs. | 06-09-2011 |
20110249498 | THREE-DIMENSIONALLY STACKED NONVOLATILE SEMICONDUTOR MEMORY - A three-dimensionally stacked nonvolatile semiconductor memory of an aspect of the present invention including conductive layers stacked on a semiconductor substrate in such a manner as to be insulated from one another, a bit line which is disposed on the stacked conductive layers, a semiconductor column which extends through the stacked conductive layers, word lines for which the stacked conductive layers except for the uppermost and lowermost conductive layers are used and which have a plate-like planar shape, memory cells provided at intersections of the word lines and the semiconductor column, a register circuit which has information to supply a potential suitable for each of the word lines, and a potential control circuit which reads the information retained in the register circuit in accordance with an input address signal of a word line and which supplies a potential suitable for the word line corresponding to the address signal. | 10-13-2011 |
20120026804 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a plurality of memory layers arranged in multilayer, each memory layer including a cell array, the cell array containing a plurality of first parallel lines, a plurality of second parallel lines arranged crossing the first lines, and a plurality of memory cells connected at intersections of the first lines and the second lines; a pulse generator operative to generate pulses required for data access to the memory cell; and a control means operative to control the pulse generator such that the pulse output from the pulse generator has energy in accordance with the memory layer to which the access target memory cell belongs. | 02-02-2012 |
20120113719 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM AND METHOD OF MANAGING OF DEFECTIVE COLUMN IN NONVOLATILE SEMICONDUCTOR STORAGE SYSTEM - A nonvolatile semiconductor storage device is disclosed, which includes a memory cell array in which nonvolatile memory cells are arranged, a first data holding circuit which temporarily holds a collective processing unit of read or write data to be simultaneously read from or written to the memory cells, a circuit which takes out the data held in the first data holding circuit from the device, and a second data holding circuit in which data is automatically set at a time when power supply is turned on and in which the data is changeable based on a command input to the device, wherein the collective processing unit is equal to a sum of the number of units used within the device and the maximum number of units continuously output from the device to outside or input to the device from outside. | 05-10-2012 |
20120195119 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In writing, a first write operation to a first memory cell is executed; and a second write operation for providing a first threshold-voltage distribution to a second memory cell adjacent to the first one, is executed. The first threshold voltage distribution is a lowest threshold-voltage distribution among the positive threshold voltage distributions. It is verified whether a desired threshold voltage distribution has been obtained in the first memory cell or not (first write verify operation), moreover, it is verified whether a first threshold voltage distribution or a threshold voltage distribution having a voltage level larger than the first threshold-voltage distribution has been obtained in the second memory cell or not (second write verify operation). A control circuit outputs results of the first write verify operation and the second write verify operation. | 08-02-2012 |
20120303871 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME - According to one embodiment, a semiconductor memory device includes a memory cell array including a plurality of memory cells, a first register configured to store data of the memory cells, and a sequence control circuit configured to control the memory cell array and the first register. In at least a data read operation of the memory cells, the sequence control circuit reads out, from the memory cell array, data including flag information representing whether the number of failed bits is in an allowable range. | 11-29-2012 |
20130163309 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a memory cell array configured of at least a first portion and a second portion each including a plurality of memory cells each with a variable resistor which stores an electrically rewritable resistance value as a data, and a control circuit which controls a first operation including selected one of operations to erase, write and read the data in the first portion and a second operation including selected one of operations to erase, write and read the data in the second portion, the first operation and the second operation being performed in temporally overlapped relation with each other. | 06-27-2013 |
20130308368 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device comprises a plurality of memory layers arranged in multilayer, each memory layer including a cell array, the cell array containing a plurality of first parallel lines, a plurality of second parallel lines arranged crossing the first lines, and a plurality of memory cells connected at intersections of the first lines and the second lines; a pulse generator operative to generate pulses required for data access to the memory cell; and a control means operative to control the pulse generator such that the pulse output from the pulse generator has energy in accordance with the memory layer to which the access target memory cell belongs. | 11-21-2013 |
20140036600 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - In writing, a first write operation to a first memory cell is executed; and a second write operation for providing a first threshold-voltage distribution to a second memory cell adjacent to the first one, is executed. The first threshold voltage distribution is a lowest threshold-voltage distribution among the positive threshold voltage distributions. It is verified whether a desired threshold voltage distribution has been obtained in the first memory cell or not (first write verify operation), moreover, it is verified whether a first threshold voltage distribution or a threshold voltage distribution having a voltage level larger than the first threshold-voltage distribution has been obtained in the second memory cell or not (second write verify operation). A control circuit outputs results of the first write verify operation and the second write verify operation. | 02-06-2014 |
20140098609 | NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS - According to one embodiment, a nonvolatile semiconductor memory apparatus includes a memory cell array, a row decoder, a controller. The memory cell array includes a plurality of memory strings. The memory strings include a first select transistor and a second select transistor, and are connected to each of a plurality of bit lines. The row decoder applies a voltage to the first and second select transistors. The controller detects a defect of the bit lines based on data read from the memory cells. | 04-10-2014 |
20140269113 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE CAPABLE OF INCREASING OPERATING SPEED - According to one embodiment, a non-volatile semiconductor storage device includes a memory cell array, a row decoder, a potential generating circuit, first plural potential selection circuits, a second potential selection circuit, a first discharge circuit, and a second discharge circuit. The first plural potential selection circuits select one of output potentials of the potential generating circuit by receiving a first control signal and apply the selected output potential to a first signal line. The second potential selection circuit applies a potential of the first signal line to a second signal line connected to the row decoder by receiving a second control signal. The first discharge circuit is arranged in the first potential selection circuit. The second discharge circuit is arranged in the second potential selection circuit. | 09-18-2014 |
20140369127 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device includes a first string; a second string; and a controller. The first string is coupled with a first bit line and includes first memory cells. The second string is coupled with a second bit line and includes second memory cells. The controller executes writing first data into the first memory cells and writing second data into the second memory cells simultaneously. The controller reads data from the first and second strings after writing the first and second data. | 12-18-2014 |
20150036434 | SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a semiconductor memory device reads data in units of page. The device includes: a memory cell array; a plurality of latch circuits; and an arithmetic operation circuit. The memory cell array holds data multiplexed in at least three pages. The latch circuits read and hold the multiplexed data at a startup. The arithmetic operation circuit performs operations by use of the multiplexed data. | 02-05-2015 |