Patent application number | Description | Published |
20080290918 | DLL CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS AND METHOD OF DELAYING AND LOCKING CLOCK IN SEMICONDUCTOR MEMORY APPARATUS - A DLL circuit of a semiconductor memory apparatus includes a frequency sensing unit that generates and outputs a high frequency signal and a low frequency signal on the basis of a CAS latency signal. A clock dividing unit divides the frequency of an internal clock by a predetermined value and generates a divided clock in response with whether the high frequency signal is enabled or the low frequency signal is enabled. A phase sensing unit that switches a reference clock and a comparison clock, compares the phases thereof in accordance with whether the high frequency signal is enabled or the low frequency signal is enabled, selectively switches first and second phase control signals generated on the basis of the comparison result, and outputs the switched signals. | 11-27-2008 |
20090168565 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR OPERATING THE SAME - Semiconductor memory device and method for operating the same comprise an auxiliary driver configured to output an internal strobe signals generated corresponding to a read command as a plurality of auxiliary strobe signal in response to a control signal, wherein the auxiliary driver bypass a first output auxiliary strobe signal, and delay to output the rest of the auxiliary strobe signal among the outputted auxiliary strobe signal and a strobe signal generator for driving the auxiliary strobe signal to output the delayed auxiliary strobe signal as a data strobe signals. | 07-02-2009 |
20090257291 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR GENERATING PIPE-IN SIGNAL THEREOF - A semiconductor memory device includes a preliminary signal generator configured to output a preliminary pipe-in signal enabled when a read command is applied. A delay unit is configured to delay the preliminary pipe-in signal and output the delayed preliminary pipe-in signal to match the timing of output data. A pipe-in signal generator generates a pipe-in signals that are enabled between a predetermined enable point and a next enable point of the delayed preliminary pipe-in signal output. | 10-15-2009 |
20100157712 | REFRESH CIRCUIT OF SEMICONDUCTOR MEMORY APPARATUS - A refresh circuit of a semiconductor memory apparatus includes a bank active signal generator configured to selectively enable a plurality of bank active signals in response to a piled signal and disable the plurality of bank active signals in response to a plurality of precharge pulses when a refresh signal is enabled; a precharge pulse generator configured to generate a plurality of preliminary precharge pulses in response to the plurality of bank active signals; a delaying unit configured to generate a plurality of preliminary delay precharge pulses by delaying the plurality of preliminary precharge pulses; and a selecting unit configured to selectively output the plurality of preliminary precharge pulses or the plurality of preliminary delay precharge pulses as the plurality of precharge pulses in response to the piled signal. | 06-24-2010 |
20100287337 | NONVOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A nonvolatile memory device has a memory cell array including a memory cell group for storing option information, and a controller configured to wait for a preset period of time after a command for loading the option information has been received before performing an operation of loading the option information. | 11-11-2010 |
20100302827 | CODE ADDRESS MEMORY (CAM) CELL READ CONTROL CIRCUIT OF SEMICONDUCTOR MEMORY DEVICE AND METHOD OF READING DATA OF CAM CELL - A Code Address Memory (CAM) cell read control circuit of a semiconductor memory device includes a CAM cell read circuit configured to read data stored in a CAM cell and to output the read data, an internal delay circuit configured to delay an externally input reset signal and to generate a number of internal command signals, and a signal generation unit configured to generate an internal ready/busy signal in response to the internal command signals. The internal ready/busy signal is generated after the externally input reset signal has reset the CAM cell read circuit. | 12-02-2010 |
20110234281 | DLL CIRCUIT AND METHOD OF CONTROLLING THE SAME - A delayed lock loop (DLL) circuit includes: a phase conversion control unit configured to latch and drive a phase comparison signal in response to the input of a delay enable signal, and output the driven signal as a phase conversion control signal. A phase converting unit configured to control the phase of a delay clock on the basis of the phase conversion control signal, and transmit the controlled delay clock to a delay compensating unit. | 09-29-2011 |
20120032706 | MULTI-CHIP PACKAGE - A multi-chip package includes a plurality of chips coupled in parallel to an I/O pad and an output driver circuit included in each of the chips and configured to transmit output data to the I/O pad. The driving force of the output driver circuit is controlled on the basis of stack information indicative of the number of chips being activated. | 02-09-2012 |
20120140577 | MULTI-CHIP PACKAGE AND METHOD OF OPERATING THE SAME - A semiconductor memory device includes a memory cell array including first memory cells for storing data and second memory cells for storing chip identification (ID) information, a data comparison circuit configured to compare input data and the stored data of the first memory cells and to output comparison data, and output circuits configured to output the comparison data received in parallel from the data comparison circuit. The comparison data is outputted through a selected one of the output circuits according to an enable signal generated based on the chip ID information. | 06-07-2012 |
Patent application number | Description | Published |
20080205186 | Semiconductor memory device and method for driving the same - A semiconductor memory device includes a pulse signal generator configured to combine a plurality of external command signals to generate a normal register control signal and an extended register control signal in response to a clock signal; a reset signal generator configured to receive operating information of a delay locked loop (DLL) circuit from an outside to generate a reset signal for a reset operation of the DLL circuit in response to the normal register control signal or the extended register control signal; and the DLL circuit configured to perform a reset operation in response to the reset signal | 08-28-2008 |
20080240327 | Semiconductor memory device capable of controlling tAC timing and method for operating the same - A semiconductor memory device is capable of controlling a tAC with a timing margin in an output data process. The semiconductor memory device includes a delay locked loop circuit, a tAC control unit, a reference signal generating unit, and a data output block. The delay locked loop circuit produces delay locked clock signals through a delay locking operation. The tAC control unit adjusts a delay value of the delay locked clock signals in order to control a tAC timing, thereby generating output reference signals. The reference signal generating unit produces a latch reference signal in response to the delay locked clock signals. The data output block latches data in response to the latch reference signal and for outputting the latched data in response to the output reference signals. | 10-02-2008 |
20090063803 | CIRCUIT FOR INITIALIZING A PIPE LATCH UNIT IN A SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes a pipe latch unit having a plurality of pipe latches for latching data. An input controller controls input timing of data transmitted from data line to the pipe latch unit. An output controller controls output timing of data latched in the pipe latch unit. An initialization controller controls the input controller and the output controller to thereby initialize the pipe latch unit in response to a read/write flag signal which is activated during a write operation. | 03-05-2009 |
20090168485 | PIPE LATCH DEVICE OF SEMICONDUCTOR MEMORY DEVICE - A pipe latch device includes an output controller for outputting first and second output control signal groups based on a DLL clock signal and a driving signal; an input controller for generating an input control signal group; and a pipe latch unit for latching data on a data line when a corresponding input control signal is activated, and outputting latched data when a corresponding output control signal is activated, wherein the output controller includes a plurality of shifters, each for delaying an input data signal by half clock and one clock to output a first and second output signals in synchronization with the DLL clock signal and the driving signal; and a plurality of output control signal drivers for outputting the first and second output control signal groups based on the first and second output signals. | 07-02-2009 |
20100033222 | PULSE CONTROL DEVICE - A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells. | 02-11-2010 |
20100165761 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal. | 07-01-2010 |
20100165762 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor memory device includes: a modulation controller for generating a modulation control signal for controlling a frequency modulation operation; a delay locked loop (DLL) circuit for performing a delay locking operation to generate first and second DLL clocks and outputting a frequency-modulated DLL clock in response to the modulation control signal; and a data strobe signal generator for outputting the frequency-modulated DLL clock as a data strobe signal. | 07-01-2010 |
20110193604 | PULSE CONTROL DEVICE - A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells. | 08-11-2011 |
Patent application number | Description | Published |
20080285373 | ADDRESS RECEIVING CIRCUIT FOR A SEMICONDUCTOR APPARATUS - An address receiving circuit for a semiconductor apparatus includes a controller that, in response to a semiconductor apparatus initialization-related command, generates a control signal having an activation cycle corresponding to the standard of cycle time of the semiconductor apparatus initialization-related command, and an address buffer that receives an address according to the control signal. | 11-20-2008 |
20100033218 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING THE SAME - A semiconductor integrated circuit includes a DLL controlling block configured to enable or disable an update enable signal by detecting a change in a voltage level of a phase detecting signal during a predetermined time when an operation enable signal and a threshold phase difference detecting signal are enabled, and a delay locked loop (DLL) circuit configured to generate an output clock signal by delaying and driving the reference clock signal and to control a frequency of a change in the delay amount of the reference clock signal in response to the update enable signal. | 02-11-2010 |
20100033219 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING THE SAME - A semiconductor integrated circuit includes a delay locked loop (DLL) control block configured to generate a buffer enable signal, the buffer enable signal being a pulse signal that is periodically enabled when a smart power down signal is enabled, and a DLL circuit configured to control a phase of an external clock signal in response to the buffer enable signal to generate an output clock signal. | 02-11-2010 |
20100278004 | ADDRESS RECEIVING CIRCUIT FOR A SEMICONDUCTOR APPARATUS - An address receiving circuit for a semiconductor apparatus includes a controller that, in response to a semiconductor apparatus initialization-related command, generates a control signal having an activation cycle corresponding to the standard of cycle time of the semiconductor apparatus initialization-related command, and an address buffer that receives an address according to the control signal. | 11-04-2010 |
20110043263 | SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF CONTROLLING THE SAME - A semiconductor integrated circuit includes a DLL controlling block configured to enable or disable an update enable signal by detecting a change in a voltage level of a phase detecting signal during a predetermined time when an operation enable signal and a threshold phase difference detecting signal are enabled, and a delay locked loop (DLL) circuit configured to generate an output clock signal by delaying and driving the reference clock signal and to control a frequency of a change in the delay amount of the reference clock signal in response to the update enable signal. | 02-24-2011 |