Patent application number | Description | Published |
20090062941 | HEAT INDEX - The system generates a heat index for each player in a sporting event. Historical data is maintained over time and is available for display by a user. In one embodiment, the heat index is provided via a network such as the internet. In another embodiment, the heat index is displayed as part of an event or game broadcast. The heat index represents the current level of performance of a player pursuant to a calculation algorithm that includes objective and subjective information. The objective information includes statistical data from a game or contest. The subjective information may include references from announcers and input from viewers. | 03-05-2009 |
20090064017 | TUNING/CUSTOMIZATION - The system provides the ability to have a dashboard automatically configure itself in a dynamic manner based on a detected context in which the dashboard is being used. In one embodiment, the system is used as part of the presentation of secondary content that is synchronized to, or coordinated with, the presentation of a primary content source. The system provides a plurality of user selectable widgets that can each present secondary content as desired. The system not only permits ornamental and geographical customization of the dashboard, but allows temporal customization as well by allowing the user to request alerts for certain types of primary or secondary content. The system also provides for automatic reconfiguration that is tied to another users presence or absence. | 03-05-2009 |
20090064247 | USER GENERATED CONTENT - The system provides a computer based presentation synchronized to a broadcast and not merely to an event. The system includes a customizable interface that uses a broadcast and a plurality of secondary sources to present data and information to a user to enhance and optimize a broadcast experience. The secondary sources can comprise commercially available sources as well as user generated content that is generated prior to, or coincidentally with, the broadcast of the primary content. | 03-05-2009 |
Patent application number | Description | Published |
20100055300 | Methods and Apparatus Configurations for Affecting Movement of Fluids Within a Microelectronic Topography Processing Chamber and a Method for Passivating Hardware Within a Microelectronic Topography Processing Chamber - An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound. | 03-04-2010 |
20100159208 | Barrier Layer Configurations and Methods for Processing Microelectronic Topographies Having Barrier Layers - A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL. | 06-24-2010 |
20100279002 | Systems and Methods Affecting Profiles of Solutions Dispensed Across Microelectronic Topographies During Electroless Plating Processes - A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a moveable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the moveable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements. | 11-04-2010 |
20100279071 | Systems and Methods Affecting Profiles of Solutions Dispensed Across Microelectronic Topographies During Electroless Plating Processes - A method is provided which includes dispensing a deposition solution at a plurality of locations extending different distances from a center of a microelectronic topography each at different moments in time during an electroless plating process. An electroless plating apparatus used for the method includes a substrate holder, a movable dispense arm, and a storage medium comprising program instructions executable by a processor for positioning the movable dispense arm. Another method and accompanying electroless deposition chamber are configured to introduce a gas into an electroless plating chamber above a plate which is suspended above a microelectronic topography and distribute the gas to regions extending above one or more discrete portions of the microelectronic topography. An exemplary microelectronic topography resulting from the aforementioned methods and apparatuses includes a layer having distinct regions each including a comparatively different thickness and comparatively different concentrations of one of the one or more elements. | 11-04-2010 |
20110014489 | Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers - A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis. | 01-20-2011 |
20110097477 | Methods and Apparatus Configurations for Affecting Movement of Fluids Within a Microelectronic Topography Processing Chamber and a Method for Passivating Hardware Within a Microelectronic Topography Processing Chamber - An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectronic topography and a rotatable case with sidewalls arranged on opposing sides of the substrate holder. The method of using such an apparatus includes positioning a microelectronic topography upon a substrate holder of a processing chamber, exposing the microelectronic topography to a fluid within the processing chamber, and rotating a case of the processing chamber. The rotation is sufficient to affect movement of the fluid relative to the surface of the microelectronic topography. A method for passivating hardware of a microelectronic processing chamber includes exposing the hardware to an organic compound and subsequently exposing the hardware to an agent configured to form polar bonds with the organic compound. | 04-28-2011 |
20110117328 | Barrier Layer Configurations and Methods for Processing Microelectronic Topographies Having Barrier Layers - A microelectronic topography includes a dielectric layer (DL) with a surface higher than an adjacent bulk metal feature (BMF) and further includes a barrier layer (BL) upon the BMF and extending higher than the DL. Another microelectronic topography includes a BL with a metal-oxide layer having a metal element concentration which is disproportionate relative to concentrations of the element within metal alloy layers on either side of the metal-oxide layer. A method includes forming a BL upon a BMF such that portions of a first DL adjacent to the BMF are exposed, selectively depositing a second DL upon the BL, cleaning the topography thereafter, and blanket depositing a third DL upon the cleaned topography. Another method includes polishing a microelectronic topography such that a metallization layer is coplanar with a DL and further includes spraying a deionized water based fluid upon the polished topography to remove debris from the DL. | 05-19-2011 |
20110271905 | Methods and System for Processing a Microelectronic Topography - Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, the methods may include loading the topography into a chamber, closing the chamber to form an enclosed area, and supplying fluids to the enclosed area. In some embodiments, the fluids may fill the enclosed area. In addition or alternatively, a second enclosed area may be formed about the topography. As such, the provided system may be adapted to form different enclosed areas about a substrate holder. In some cases, the method may include agitating a solution to minimize the accumulation of bubbles upon a wafer during an electroless deposition process. As such, the system provided herein may include a means for agitating a solution in some embodiments. Such a means for agitation may be distinct from the inlet/s used to supply the solution to the chamber. | 11-10-2011 |
20120213914 | Apparatus and Method for Electroless Deposition of Materials on Semiconductor Substrates - An apparatus is provided having a closable chamber that can be sealed and is capable of withstanding an increased pressure and high temperature. The chamber has several inlet ports for the supply of various process liquids, such as deposition solutions, water for rinsing, etc., and a port for the supply of a gas under pressure. The apparatus also includes a solution heater and a control system for controlling temperature and pressure in the chamber. Uniform deposition is achieved by carrying out the deposition process under pressure and under temperature slightly below the boiling point of the solution. The solution can be supplied from above via a shower head formed in the cover, or through the bottom of the chamber. Rinsing or other auxiliary solutions are supplied via a radially moveable chemical dispensing arm that can be arranged above the substrate parallel thereto. | 08-23-2012 |
20120263869 | Methods for Forming a Barrier Layer with Periodic Concentrations of Elements and Structures Resulting Therefrom - A method is provided which includes dispensing and removing different deposition solutions during an electroless deposition process to form different sub-films of a composite layer. Another method includes forming a film by an electroless deposition process and subsequently annealing the microelectronic topography to induce diffusion of an element within the film. Yet another method includes reiterating different mechanisms of deposition growth, namely interfacial electroless reduction and chemical adsorption, from a single deposition solution to form different sub-films of a composite layer. A microelectronic topography resulting from one or more of the methods includes a film formed in contact with a structure having a bulk concentration of a first element. The film has periodic successions of regions each comprising a region with a concentration of a second element greater than a set amount and a region with a concentration of the second element less than the set amount. | 10-18-2012 |
20120282483 | Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers - A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis. | 11-08-2012 |
20140037982 | Method for Strengthening Adhesion Between Dielectric Layers Formed Adjacent to Metal Layers - A method is provided which includes forming a metal layer and converting at least a portion of the metal layer to a hydrated metal oxide layer. Another method is provided which includes selectively depositing a dielectric layer upon another dielectric layer and selectively depositing a metal layer adjacent to the dielectric layer. Consequently, a microelectronic topography is formed which includes a metal feature and an adjacent dielectric portion comprising lower and upper layers of hydrophilic and hydrophobic material, respectively. A topography including a metal feature having a single layer with at least four elements lining a lower surface and sidewalls of the metal feature is also provided herein. The fluid/s used to form such a single layer may be analyzed by test equipment configured to measure the concentration of all four elements. In some cases, the composition of the fluid/s may be adjusted based upon the analysis. | 02-06-2014 |
Patent application number | Description | Published |
20100019334 | Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 01-28-2010 |
20100019335 | Materials, Fabrication Equipment, and Methods for Stable, Sensitive Photodetectors and Image Sensors Made Therefrom - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises an n-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 01-28-2010 |
20110226934 | IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region. | 09-22-2011 |
20110267510 | DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE - In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array. | 11-03-2011 |
20110309462 | STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM INCLUDING CIRCUITS, PROCESSES, AND MATERIALS FOR ENHANCED IMAGING PERFORMANCE - In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period. | 12-22-2011 |
20120280226 | MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 11-08-2012 |
20130250150 | DEVICES AND METHODS FOR HIGH-RESOLUTION IMAGE AND VIDEO CAPTURE - In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array may include at least four megapixels and the second image sensor array may include one-half or less than the number of pixels in the first image sensor array. | 09-26-2013 |
20140087073 | EQUIPMENT AND METHOD OF MANUFACTURING FOR LIQUID PROCESSING IN A CONTROLLED ATMOSPHERIC AMBIENT - In various exemplary embodiments, a system and related method for processing substrates is provided. In one embodiment, a substrate processing system is provided that includes a substrate load module, a plurality of facilities modules, a plurality of process chambers, a substrate transfer module, at least one transfer gate to provide a contamination barrier between various ones of adjacent modules, and at least one gas impermeable shell to provide a controlled atmosphere within the substrate processing system. | 03-27-2014 |
20140367823 | IMAGE SENSORS EMPLOYING SENSITIZED SEMICONDUCTOR DIODES - In various example embodiments, the inventive subject matter is an image sensor and methods of formation of image sensors. In an embodiment, the image sensor comprises a semiconductor substrate and a plurality of pixel regions. Each of the pixel regions includes an optically sensitive material over the substrate with the optically sensitive material positioned to receive light. A pixel circuit for each pixel region is also included in the sensor. Each pixel circuit comprises a charge store formed on the semiconductor substrate and a read out circuit. A non-metallic contact region is between the charge store and the optically sensitive material of the respective pixel region, the charge store being in electrical communication with the optically sensitive material of the respective pixel region through the non-metallic contact region. | 12-18-2014 |
20150048300 | MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 02-19-2015 |
Patent application number | Description | Published |
20130077155 | ADDITIVE FOR IMPROVING OPTICAL PERFORMANCE OF AN ELECTROPHORETIC DISPLAY - The present invention is directed to an electrophoretic fluid comprising uncharged or lightly charged neutral buoyancy particles. The resulting fluid can improve not only image stability but also contrast ratio of a display device, without significantly affecting the switching speed. The present invention is also directed to an electrophoretic display comprising display cells filled with the electrophoretic fluid. | 03-28-2013 |
20130175480 | ELECTROPHORETIC DISPLAY FLUID - The invention is directed to an electrophoretic fluid which can improve display performance such as switching speed, vertical bistability and the ghosting effect, and also reduce display defects. The electrophoretic fluid comprises charged pigment particles dispersed in a mixture of isoparaffins. | 07-11-2013 |
20130208338 | SHUTTER MODE FOR COLOR DISPLAY DEVICES - The present invention is directed to a color display comprising an electrophoretic fluid which comprises one or two types of pigment particles dispersed in a clear and colorless or clear and colored solvent, wherein said electrophoretic fluid is sandwiched between a common electrode and a plurality of driving electrodes. The driving electrodes are kept at a certain distance in order to expose a background layer. | 08-15-2013 |
20140231728 | ELECTROPHORETIC FLUID - The present invention is directed to an electrophoretic fluid comprising transparent particles, as an additive. The presence of the transparent particles in the fluid provides improved display performance. | 08-21-2014 |