Lei, CA
Bao Lei, Los Angeles, CA US
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20120073622 | SOLUTION-PROCESSED INORGANIC PHOTO-VOLTAIC DEVICES AND METHODS OF PRODUCTION - Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices. | 03-29-2012 |
20120223733 | Solar Cell Characterization System with an Automated Continuous Neutral Density Filter - Techniques for solar cell electrical characterization are provided. In one aspect, a solar testing device is provided. The device includes a solar simulator; and a continuous neutral density filter in front of the solar simulator having regions of varying light attenuation levels ranging from transparent to opaque, the continuous neutral density filter having an area sufficiently large to filter all light generated by the solar simulator, and wherein a position of the continuous neutral density filter relative to the solar simulator is variable so as to control a light intensity produced by the device. A solar cell electrical characterization system and a method for performing a solar cell electrical characterization are also provided. | 09-06-2012 |
20140300384 | Solar Cell Characterization System With an Automated Continuous Neutral Density Filter - Techniques for solar cell electrical characterization are provided. In one aspect, a solar testing device is provided. The device includes a solar simulator; and a continuous neutral density filter in front of the solar simulator having regions of varying light attenuation levels ranging from transparent to opaque, the continuous neutral density filter having an area sufficiently large to filter all light generated by the solar simulator, and wherein a position of the continuous neutral density filter relative to the solar simulator is variable so as to control a light intensity produced by the device. A solar cell electrical characterization system and a method for performing a solar cell electrical characterization are also provided. | 10-09-2014 |
20140326311 | METAL-CHALOGENIDE PHOTOVOLTAIC DEVICE WITH METAL-OXIDE NANOPARTICLE WINDOW LAYER - A metal-chalcogenide photovoltaic device includes a first electrode, a window layer spaced apart from the first electrode, and a photon-absorption layer between the first electrode and the window layer. The photon-absorption layer includes a metal-chalcogenide semiconductor. The window layer includes a layer of metal-oxide nanoparticles, and at least a portion of the window layer provides a second electrode that is substantially transparent to light within a range of operating wavelengths of the metal-chalcogenide photovoltaic device. A method of producing a metal-chalcogenide photovoltaic device includes providing a photovoltaic substructure, providing a solution of metal-oxide nanoparticles, and forming a window layer on the substructure using the solution of metal-oxide nanoparticles such that the window layer includes a layer of metal-oxide nanoparticles formed by a solution process. | 11-06-2014 |
Bao Lei, San Bruno, CA US
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20140365890 | Media Player Operating in Multiple Modes - In one embodiment, a method plays, on an interface, a media program in a media player operating in a first mode. A position change of the media player on the interface is determined while the media program is being played in the media player to cause the media player to move to an out of bounds position. The method detects the media player moving to the out of bounds position and upon detecting, automatically performs switching from the first mode to a second mode based on the media player moving to the out of bounds position where the second mode restricts movement of the media player. Also, the method transfers the media player to a new position that is not in the out of bounds position where the media player continues to play the media program in the new position. | 12-11-2014 |
20150040161 | PREVIEW IMAGE PROCESSING USING A BUNDLE OF PREVIEW IMAGES - In one embodiment, a method sends a request for a bundle of preview images for a video to a server. The video is played and a portion of the bundle of preview images for the video is received. The method decodes the portion of the bundle of preview images before the entire bundle of preview images is received. Then, an input from a user for a location in the video is received and the method determines if a preview image corresponding to the location has been decoded from the bundle of preview images. When the image corresponding to the location has been decoded, the preview image corresponding to the location is displayed as a preview image. | 02-05-2015 |
Bo Lei, San Ramon, CA US
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20110286279 | Erase and Programming Techniques to Reduce the Widening of State Distributions in Non-Volatile Memories - Techniques are presented for use in memory devices to improve reliability and endurance by reducing the widening in state distributions, that occurs after multiple write/erase cycles. One set of techniques uses a pre-conditioning operation where a pulse series, which may include program and gentle erase, are applied to one or more wordlines while a voltage differential is applied in the wordline direction, bitline direction, or both. Another set of techniques uses a dual or multi-pulse program process, where an increased wordline-to-wordline differential used in the first pulse of a pair. | 11-24-2011 |
20130242661 | NON-VOLATILE STORAGE WITH READ PROCESS THAT REDUCES DISTURB - A apparatus and process for reading data from non-volatile storage includes applying a read compare signal to a selected data memory cell of a NAND string, applying a first set of one or more read pass voltages to unselected data memory cells at both ends of the NAND string and applying a second set of one or more read pass voltages to unselected data memory cells between both ends of the NAND string and on both sides of the selected data memory cell. The second set of one or more read pass voltages are all higher than the first set of one or more read pass voltages. | 09-19-2013 |
20130250688 | SELECTED WORD LINE DEPENDENT PROGRAMMING VOLTAGE - Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the word line that is selected for programming. Applying a selected word line dependent program condition may reduce or eliminate program disturb. The duration of a programming pulse may depend on the word line that is selected for programming. This could be a physical characteristic of the word line or its location on a NAND string. As one example, a shorter pulse width may be used for the programming signal when programming edge word lines. | 09-26-2013 |
20140043897 | AGGREGATING DATA LATCHES FOR PROGRAM LEVEL DETERMINATION - In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—may be determined from the aggregated results of a single read step. A circuit for aggregating binary results of a read step includes parallel transistors with control gates connected to the data latches holding the binary results, so that current flow through the combined transistors depends on the binary results. | 02-13-2014 |
20140082437 | Block And Page Level Bad Bit Line And Bits Screening Methods For Program Algorithm - A programming process evaluates NAND strings of a block to detect a defective NAND string, e.g., a NAND string with a defective storage element. Status bits can be stored which identify the defective NAND string. Original data which is to be written in the NAND string is modified so that programming of the defective NAND string does not occur. For example, a bit of write data which requires a storage element in the defective NAND string to be programmed to a higher data state is modified (e.g., flipped) so that no programming of the storage element is required. Subsequently, when a read operation is performed, the flipped bits are flipped back to their original value, such as by using error correction code decoding. In an erase process, a count of defective NAND strings is made and used to adjust a pass condition of a verify test. | 03-20-2014 |
20140084936 | Charge Pump Based Over-Sampling ADC for Current Detection - Techniques are presented for determining current levels based on the behavior of a charge pump system while driving a load under regulation. While driving the load under regulation, the number of pump clocks during a set interval is counted. This can be compared to a reference that can be obtained, for example, from the numbers of cycles needed to drive a known load current over an interval of the duration. By comparing the counts, the amount of current being drawn by the load can be determined. This technique can be applied to determining leakage from circuit elements, such as word lines in a non-volatile memory. | 03-27-2014 |
Cathy Lei, Chino Hills, CA US
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20090062812 | Detachable Coil Incorporating Stretch Resistance - An implantable embolic device having a stretch-resistant member passing therethrough that also serves as a tether for connecting the device to a delivery system. The stretch-resistant member is attached at a proximal and distal end of the device and extends proximally to the delivery device. The proximal attachment point serves to isolate a distal, stretch resisting segment of the member from axial tension placed on a proximal, connecting section of the member. Thus, the portion of the stretch-resistant member being used to connect the embolic device to a delivery device may be placed under tension without placing tension or distorting the implant. | 03-05-2009 |
20120245521 | Reinforced Balloon Catheter - One embodiment of the present invention discloses a balloon catheter employing a reinforced, co-axial, duel lumen design. In certain embodiments, at least one of the lumens is formed of a multilayer, tubular element in which one of the layers functions, in part, to provide radial reinforcement to the tubular element. | 09-27-2012 |
20140200607 | Occlusive Device - An occlusive device comprising a braided component which can be inserted into a blood vessel and a delivery system for delivering said occlusive device is described. | 07-17-2014 |
Chon Fong Lei, Daly City, CA US
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20090210270 | Systems and methods for providing direct communication from personalized targeted advertisements - A method of creating a personalized targeted advertisement for displaying on a webpage of a website is disclosed. The personalized targeted advertisement includes features to provide direct communication between a sender and a recipient of the personalized targeted advertisement. A selection of an advertisement template from a plurality of advertisement templates is detected. Then, a media file and a custom message are received to build the personalized targeted advertisement. The personalized targeted advertisement is then sent to the recipient identified by a unique identification. The advertising server is notified so that the personalized targeted advertisement can be displayed when the recipient identified by the unique identification logs into the website. | 08-20-2009 |
Chon Hei Lei, Redwood Shores, CA US
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20140006344 | PLUGGABLE SESSION CONTEXT | 01-02-2014 |
Chon Hei Lei, Alameda, CA US
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20080313134 | QUERY OPTIMIZATION ON VPD PROTECTED COLUMNS - A method and apparatus for preserving optimization hints in a transformed query is provided. In one embodiment, the methodology is implemented by query optimization logic. Upon receiving a first query to access values in a column of a table protected by an access control policy, the query optimization logic creates a second query that is equivalent to the first query as subject to the access control policy. Furthermore, the second query contains a new predicate that conjunctively joins a clone of a first expression in a predicate of the first query with a second expression that is derived, based on the access control policy, from the first expression. In one embodiment, the query optimization logic submits the second query for execution. | 12-18-2008 |
20100036846 | METHOD AND SYSTEM FOR OPTIMIZING ROW LEVEL SECURITY IN DATABASE SYSTEMS - One embodiment of the present invention provides a system that implements a security policy in a database. During operation, the system receives a request associated with a set of objects in the database. Next, the system obtains a set of access control lists (ACLs) associated with the database, wherein a respective ACL specifies one or more access privileges associated with a user or user group, and wherein a respective ACLs is not specific to a particular object in the database. The system then evaluates the ACLs to obtain a set of ACL results associated with the request and processes the request by applying the set of ACL results to the objects without evaluating the ACLs repeatedly for each of the objects. | 02-11-2010 |
20100318570 | PLUGGABLE SESSION CONTEXT - A method and apparatus are described for sharing a session to access a database. A database server receives, in a session, a session context identifier and a command. The session context identifier identifies a session context to use for the session. The session context is a set of information or commands that plug into a session state and specify how commands in the session are to be performed for a particular user or privilege level. In response to receiving the identifier, the database server associates the session context with the database session for the connection. The database server uses the session context to process the command. The session context may then be detached from the session, allowing another user to attach to the session via another session context. | 12-16-2010 |
20110067084 | METHOD AND APPARATUS FOR SECURING A DATABASE CONFIGURATION - One embodiment of the present invention provides a system that secures a database configuration from undesired modifications. This system allows a security officer to issue a configuration-locking command, which activates a lock for the configuration of a database object. When a configuration lock is activated for a database object, the system prevents a user (e.g., a database administrator) from modifying the configuration of the database object, without restricting the user from accessing the database object itself. The security officer is a trusted user that is responsible for maintaining the stability of the database configuration, such that a configuration lock activated by the security officer preserves the database configuration by overriding the privileges assigned to a database administrator. | 03-17-2011 |
20120095988 | QUERY OPTIMIZATION ON VPD PROTECTED COLUMNS - A method and apparatus for preserving optimization hints in a transformed query is provided. In one embodiment, the methodology is implemented by query optimization logic. Upon receiving a first query to access values in a column of a table protected by an access control policy, the query optimization logic creates a second query that is equivalent to the first query as subject to the access control policy. Furthermore, the second query contains a new predicate that conjunctively joins a clone of a first expression in a predicate of the first query with a second expression that is derived, based on the access control policy, from the first expression. In one embodiment, the query optimization logic submits the second query for execution. | 04-19-2012 |
Da Lei, San Diego, CA US
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20140305055 | BASIC STRUCTURES MADE FROM RECYCLED SCRAP TIRES - A dock bumper made from rubber material derived from scrap tires with a trapezoidal cross-section, a trapezoidal side profile, a base, and an optional longitudinal lumen. The longitudinal lumen also has a trapezoidal cross-section and may be open at one or both ends. The dock bumper is further provided with mounting holes for mounting on a surface. The mounting hole includes an opening for a fastener and an indentation in which a plug maybe securely installed to cover the fastener. A guardrail cover adapted for installation over a conventional crash barrier guardrail. A variety of rubber encased pillars, including crash barrier pillars on which guardrails are mounting, coast walls, and railroad ties. The rubber encased pillars are concrete-filled steel beams encased in rubber material derived from recycled scrap tires. The rubber encased railroad ties include raised sections for mounting and supporting railroad tracks. | 10-16-2014 |
Gang Lei, Elk Grove, CA US
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20140111799 | DEEP ULTRA-VIOLET LIGHT SOURCES FOR WAFER AND RETICLE INSPECTION SYSTEMS - Disclosed are methods and apparatus for generating a sub-208 nm laser. A laser apparatus includes one or more seed radiation sources for generating a first radiation beam having a first fundamental wavelength on a first optical path and a second radiation beam having a second fundamental wavelength on a second optical path, a first amplifier for amplifying the first radiation beam, a second amplifier for amplifying the second radiation beam, and a wavelength conversion module comprising a plurality of crystals for frequency multiplying and mixing the amplified first and second radiation beams to produce an output beam at a fifth harmonic that is less than about 208 nm. | 04-24-2014 |
Gong Lei, Santa Clara, CA US
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20130181856 | DIGITAL-TO-ANALOG CONVERTER - An embodiment of the present invention provides a digital-to-analog converter including: a primary modulator; a secondary modulator, connected to the primary modulator; a delay unit, connected to the primary modulator; a subtractor, connected to the delay unit and the secondary modulator separately; a first processing module, configured to perform decoding, dynamic matching, and digital-to-analog conversion in sequence on a B-bit digital signal output by the secondary modulator, so as to obtain a first analog signal; a second processing module, configured to perform decoding, dynamic matching, and digital-to-analog conversion in sequence on an (N−B+1) -bit quantization noise signal output by the subtractor, so as to obtain an analog noise signal; and an adder, connected to the first processing module and the second processing module separately, and configured to add the first analog signal and the analog noise signal, so as to obtain and output a second analog signal. | 07-18-2013 |
Guan-Dao Lei, San Ramon, CA US
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20140291206 | CATALYTIC PROCESSES AND SYSTEMS FOR BASE OIL PRODUCTION USING ZEOLITE SSZ-32X - Processes and catalyst systems are provided for dewaxing a hydrocarbon feedstock to form a lubricant base oil. A layered catalyst system of the present invention may comprise a first hydroisomerization dewaxing catalyst disposed upstream from a second hydroisomerization dewaxing catalyst. Each of the first and second hydroisomerization dewaxing catalysts may be selective for the isomerization of n-paraffins. The first hydroisomerization catalyst may have a higher level of selectivity for the isomerization of n-paraffins than the second hydroisomerization dewaxing catalyst. At least one of the first and second hydroisomerization dewaxing catalysts comprises small crystallite zeolite SSZ-32x. | 10-02-2014 |
Guan-Dao Lei, Walnut Creek, CA US
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20110315597 | CATALYTIC PROCESSES AND SYSTEMS FOR BASE OIL PRODUCTION FROM HEAVY FEEDSTOCK - Processes and catalyst systems are provided for dewaxing a heavy hydrocarbon feedstock to form a lubricant base oil. A layered catalyst system of the present invention may comprise a first hydroisomerization dewaxing catalyst disposed upstream from a second hydroisomerization dewaxing catalyst. Each of the first and second hydroisomerization dewaxing catalysts may be selective for the isomerization of n-paraffins. The first hydroisomerization catalyst has a first level of selectivity for the isomerization of n-paraffins, the second hydroisomerization dewaxing catalyst has a second level of selectivity for the isomerization of n-paraffins, and a layered catalyst system comprising the first and second hydroisomerization dewaxing catalysts has a third level of selectivity for the isomerization of n-paraffins. The third level of selectivity may be higher than each of the first level of selectivity and the second level of selectivity. | 12-29-2011 |
20110315598 | CATALYTIC PROCESSES AND SYSTEMS FOR BASE OIL PRODUCTION USING ZEOLITE SSZ-32x - Processes and catalyst systems are provided for dewaxing a hydrocarbon feedstock to form a lubricant base oil. A layered catalyst system of the present invention may comprise a first hydroisomerization dewaxing catalyst disposed upstream from a second hydroisomerization dewaxing catalyst. Each of the first and second hydroisomerization dewaxing catalysts may be selective for the isomerization of n-paraffins. The first hydroisomerization catalyst may have a higher level of selectivity for the isomerization of n-paraffins than the second hydroisomerization dewaxing catalyst. At least one of the first and second hydroisomerization dewaxing catalysts comprises small crystallite zeolite SSZ-32x. | 12-29-2011 |
20110319685 | CATALYTIC PROCESSES AND SYSTEMS FOR BASE OIL PRODUCTION FROM LIGHT FEEDSTOCK - Processes and catalyst systems are provided for dewaxing a light hydrocarbon feedstock to form a lubricant base oil. A layered catalyst system of the present invention may comprise a first hydroisomerization dewaxing catalyst disposed upstream from a second hydroisomerization dewaxing catalyst. Each of the first and second hydroisomerization dewaxing catalysts may be selective for the isomerization of n-paraffins. The first hydroisomerization catalyst may have a higher level of selectivity for the isomerization of n-paraffins than the second hydroisomerization dewaxing catalyst. | 12-29-2011 |
20130260985 | CATALYTIC PROCESSES AND SYSTEMS FOR BASE OIL PRODUCTION FROM HEAVY FEEDSTOCK - A catalyst system is provided for dewaxing a heavy hydrocarbon feedstock to form a lubricant base oil. A layered catalyst system of the present invention may comprise a first hydroisomerization dewaxing catalyst disposed upstream from a second hydroisomerization dewaxing catalyst. Each of the first and second hydroisomerization dewaxing catalysts may be selective for the isomerization of n-paraffins. The first hydroisomerization catalyst has a first level of selectivity for the isomerization of n-paraffins, the second hydroisomerization dewaxing catalyst has a second level of selectivity for the isomerization of n-paraffins, and a layered catalyst system comprising the first and second hydroisomerization dewaxing catalysts has a third level of selectivity for the isomerization of n-paraffins. The third level of selectivity may be higher than each of the first level of selectivity and the second level of selectivity. | 10-03-2013 |
Hongbing Lei, San Jose, CA US
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20140348187 | Laser with Full C-Band Tunability and Narrow Linewidth - A laser comprises a front mirror (FM), a gain section coupled to the FM, a phase section coupled to the gain section such that the gain section is positioned between the phase section and the FM, and a back mirror (BM) comprising an interferometer and coupled to the phase section such that the phase section is positioned between the BM and the gain section. A method comprises splitting a first light into a second light and a third light, reflecting the second light to form a second reflected light, reflecting the third light to form a third reflected light, and causing the second reflected light and the third reflected light to interfere and combine to form a combined light to narrow a reflectivity peak spectrum width. | 11-27-2014 |
20150071314 | Obtaining Narrow Line-width, Full C-band Tunability Mirror for Monolithic or Hybrid Integrated Lasers - An apparatus comprising an optical medium, a power splitter coupled to the optical medium, a first delay line coupled to the power splitter such that the power splitter is positioned between the first delay line and the optical medium, a first comb reflector coupled to the first delay line such that the first delay line is positioned between the first comb reflector and the power splitter, and a second comb reflector coupled to the power splitter but not the first comb reflector and not the first delay line. A method comprising receiving an optical signal, splitting the optical signal into a first split optical signal and a second split optical signal, delaying the first split optical signal, tuning the delayed first split optical signal, tuning the second split optical signal, and delaying the tuned second split optical signal. | 03-12-2015 |
Hongbing Lei, Santa Clara, CA US
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20090129720 | Efficient transfer of light signals between optical devices - An optical device includes a waveguide immobilized on a base. The device includes a port configured to receive light signals from the waveguide such that the light signals travel through the port. The light signals enter the port traveling in a first direction. The port is configured to change the direction of the light signals from the first direction to a second direction that is toward a location above the device or below the device. The device also includes a wedge configured to receive the light signals from the port such that the light signals travel through the wedge and then exit the wedge traveling in a direction that is at an angle in a range of 88° to 92° relative to the device and that is toward a location above or below the device. | 05-21-2009 |
Hongbing Lei, Sunnyvale, CA US
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20110129192 | Efficient Thermoelectric Cooling of Photonic Integrated Circuits - An apparatus comprising a carrier comprising at least one heat-generating component and a thermoelectric cooler (TEC) coupled to a surface of the carrier, wherein the cross-sectional area of the TEC is less than the cross-sectional area of the carrier, and wherein the TEC is aligned with the heat-generating component. Included is an apparatus comprising a carrier comprising a plurality of optical transmitters and an active component, at least one TEC coupled to the surface of the carrier, and a support post coupled to the surface of the carrier, wherein the support post has a higher thermal resistivity than the TEC, wherein the cross-sectional area of the TEC is less than the cross-sectional area of the carrier, and wherein the TEC is aligned with the optical transmitters, the active component, or both. | 06-02-2011 |
20120008955 | Use of Multiple Shared Wavelength Lockers to Stabilize Transponders in a Wavelength Division Multiplexing (WDM) Network - An apparatus comprising at least one processor configured to receive a wavelength-division-multiplexed (WDM) signal from a remote node, wherein the WDM signal comprises a first channel carrying a first remotely generated signal, a second channel carrying a second remotely generated signal, and a third channel, adapt the WDM signal into a composite WDM signal by: dropping the first remotely generated signal from the first channel; adding a first locally generated signal to the first channel; and adding a second locally generated signal to the third channel, and provide wavelength locking to the first locally generated signal and the second locally generated signal without providing wavelength locking to the second remotely generated signal. | 01-12-2012 |
20140185980 | Silicon-On-Insulator Platform for Integration of Tunable Laser Arrays - An apparatus comprising a silicon-on-insulator (SOI) platform comprising an optical component network. An apparatus comprising an optical component network monolithically grown on a SOI platform, and an optical device coupled to the optical component network. A method comprising generating an optical signal using a silicon-based optical component, applying an electrical signal to the optical component, and tuning a wavelength of the optical signal based on the electrical signal. | 07-03-2014 |
Howard Lei, Alameda, CA US
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20140161270 | ROOM IDENTIFICATION USING ACOUSTIC FEATURES IN A RECORDING - Analysis of the audio component in multimedia data is disclosed. Rooms can be described through room impulse responses (RIR), the “fingerprint” of a specific room. The method uses machine learning techniques to identify rooms from ordinary audio recordings. | 06-12-2014 |
Jianxin Lei, Sunnyvale, CA US
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20110311735 | MAGNETRON DESIGN FOR RF/DC PHYSICAL VAPOR DEPOSITION - Methods and apparatus to improve target life and deposition uniformity in PVD chambers are provided herein. In some embodiments, a magnetron assembly includes a shunt plate having a central axis, the shunt plate rotatable about the central axis, a first open loop magnetic pole arc coupled to the shunt plate at a first radius from the central axis, and a second open loop magnetic pole arc coupled the shunt plate at a first distance from the first open loop magnetic pole arc, wherein at least one of the first radius varies along the first open loop magnetic pole arc or the first distance varies along the second open loop magnetic pole arc. In some embodiments, a first polarity of the first open loop magnetic pole arc opposes a second polarity of the second open loop magnetic pole arc. | 12-22-2011 |
Jianxin Lei, Fremont, CA US
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20130102144 | METHODS FOR FORMING A METAL GATE STRUCTURE ON A SUBSTRATE - Methods for forming a metal gate structure on a substrate are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate may include depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and depositing a metal gate layer atop dielectric layer. | 04-25-2013 |
20140001576 | LOWERING TUNGSTEN RESISTIVITY BY REPLACING TITANIUM NITRIDE WITH TITANIUM SILICON NITRIDE | 01-02-2014 |
Jimes Lei, Milpitas, CA US
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20090110384 | Inductorless Electroactive Lens Driver and System - An electroactive lens driver comprises a voltage generator generating a high alternating current voltage signal for application to an electroactive lens in response to a low direct current voltage signal. The voltage generator does not include an inductor or a transformer. | 04-30-2009 |
20110176390 | LOW PIN COUNT HIGH VOLTAGE ULTRASOUND TRANSMITTER AND METHOD THEREFOR - An integrated single channel or multi-channel ultrasound transmitter that minimizes the number of input connections to a controller such as an FPGA, field programmable gate array, or a custom integrated circuit in an ultrasound system. The method is accomplished by integrating, in low voltage logic, a means to store and or program the patterns required for the transmitter output. The number of logic input connections can be further reduced by further integrating, in low voltage logic, programmable individual time delays and frequency divider for each transmitter output. | 07-21-2011 |
20140112024 | HIGH VOLTAGE SWITCHING LINEAR AMPLIFIER AND METHOD THEREFOR - A switching linear amplifier has a DC-DC converter to increase a low input DC voltage to a first high voltage DC. A high voltage high frequency inverter is coupled to the DC-DC converter to generate high voltage pulses. A multistage voltage multiplier is coupled to the high voltage high frequency inverter to generate a second high voltage DC. A controlled charge and discharge circuit is coupled to the multistage voltage multiplier to drive a capacitive load. | 04-24-2014 |
Jipu Lei, San Jose, CA US
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20140339597 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH THICK METAL LAYERS - A device according to embodiments of the invention includes a semiconductor structure including a light emitting layer sandwiched between an n-type region and a p-type region and first and second metal contacts, wherein the first metal contact is in direct contact with the n-type region and the second metal contact is in direct contact with the p-type region. First and second metal layers are disposed on the first and second metal contacts, respectively. The first and second metal layers are sufficiently thick to mechanically support the semiconductor structure. A sidewall of one of the first and second metal layers comprises a three-dimensional feature. | 11-20-2014 |
20150076538 | SEALED SEMICONDUCTOR LIGHT EMITTING DEVICE - A method according embodiments of the invention includes providing a wafer of semiconductor devices. The wafer of semiconductor devices includes a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor devices further includes first and second metal contacts for each semiconductor device. Each first metal contact is in direct contact with the n-type region and each second metal contact is in direct contact with the p-type region. The method further includes forming a structure that seals the semiconductor structure of each semiconductor device. The wafer of semiconductor devices is attached to a wafer of support substrates. | 03-19-2015 |
Jonathan Lixing Lei, Goleta, CA US
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20090271773 | METHOD OF AND INSTRUCTION SET FOR EXECUTING OPERATIONS ON A DEVICE - A method for executing operations on a device includes executing one or more bytecode language instructions associated with a mobile agent. The mobile agent includes a state of a virtual machine and the bytecode language includes instructions such WARP, MESG, ESEL, ALERT, BROWSE, CAPS, SLEEP, and GPS, | 10-29-2009 |
Junjiang Lei, San Jose, CA US
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20100083208 | METHOD AND SYSTEM FOR PERFORMING PATTERN CLASSIFICATION OF PATTERNS IN INTEGRATED CIRCUIT DESIGNS - Disclosed is an approach for performing pattern classification for electronic designs. One advantage of this approach is that it can use fast pattern matching techniques to classify both patterns and markers based on geometric similarity. In this way, the large number of markers and hotspots that typically are identified within an electronic design can be subsumed and compressed into a much smaller set of pattern families. This significantly reduced the number of patterns that must be individually analyzed, which considerably reduces the quantity of system resources and time needed to analyze and verify a circuit design. | 04-01-2010 |
Junzhao Lei, San Jose, CA US
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20130264465 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING IMAGE DATA AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers analog image data from the image sensor to the host controller through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20130264466 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING CLOCK AND CONTROL SIGNALS - An example image sensor system includes an image sensor having a first terminal and a host controller coupled to the first terminal. Logic is included in the image sensor system, that when executed transfers clock signals from the host controller to the image sensor through the first terminal of the image sensor and also transfers one or more digital control signals between the image sensor and the host controller through the same first terminal. | 10-10-2013 |
20140078277 | ACQUIRING GLOBAL SHUTTER-TYPE VIDEO IMAGES WITH CMOS PIXEL ARRAY BY STROBING LIGHT DURING VERTICAL BLANKING PERIOD IN OTHERWISE DARK ENVIRONMENT - Introduce CMOS pixel array into dark environment and acquiring video image frames. During a first frame, reset each row of pixels sequentially, and one row at a time, and then read each row of pixels sequentially, and one row at a time. During a second frame, reset each row of pixels sequentially, and one row at a time, and then read each row of pixels sequentially, and one row at a time. Control a light source to illuminate the dark environment during at least a portion of a vertical blanking period between the reading of the last row during the first frame and the reading of the first row during the second frame. Control the light source to not illuminate the dark environment: (a) between the reading the first and last rows during the first frame; and (b) between the reading the first and last rows during the second frame. | 03-20-2014 |
20140078278 | Systems and Methods for Controlling Lighting Strength of a Camera System by Time-Matched Intermittent Illumination - A camera system with lighting strength control includes: an image sensor for capturing images of a scene; a light source for illumination of the scene; and a signal generator, in communication with the image sensor and the light source, for generation of (a) a first signal for controlling image capture by the image sensor and (b) a second signal for controlling a duty cycle of the light source. A method for controlling the lighting strength of a camera system, which includes an image sensor, an associated light source, and an associated signal generator, includes: (a) generating, using the signal generator, a first signal that controls image capture by the image sensor, and (b) generating, using the signal generator, a second signal that controls a duty cycle of the light source. | 03-20-2014 |
20140209815 | FLUORESCENCE IMAGING MODULE - A fluorescence imaging module includes an image sensor and a lens disposed between a fluorescence sample and the image sensor to focus a fluorescence image of the fluorescence sample onto the image sensor. The fluorescence sample is to be positioned an object distance away from the lens. The lens is positioned an image distance away from the image sensor. The image distance is greater than the object distance. An illuminating device is disposed between the fluorescence sample and the lens. The illuminating device includes a light source and an optical element. The light source is adapted to emit light in a first direction towards the optical element. The optical element is optically coupled to receive the light and redirect the light in a second direction towards the fluorescence sample to illuminate the fluorescence sample. | 07-31-2014 |
20150018611 | Self-Illuminating CMOS Imaging Package - A microelectronics chip contains an integrated CMOS imaging sensor integrated with a LED die. Circuitry is established on the chip for a shared power arrangement. | 01-15-2015 |
20150070542 | SHARED TERMINAL OF AN IMAGE SENSOR SYSTEM FOR TRANSFERRING IMAGE DATA AND CONTROL SIGNALS - An image sensor system includes an image sensor and a host controller. The image sensor includes a power input terminal, a data terminal, a clock input terminal, and a ground terminal. The host controller is coupled to the power input terminal to provide power to the image sensor, the data terminal to receive analog image data from the image sensor, the clock input terminal to provide a clock signal to the image sensor, and the ground terminal. The ground terminal serves as a common reference between the image sensor and one or more circuits of the host controller. The system also includes logic that is configured to transfer the analog image data from the image sensor to the host controller through the data terminal of the image sensor and to transfer one or more digital control signals between the image sensor and the host controller through the data terminal. | 03-12-2015 |
Kai Pong Lei, Sunnyvale, CA US
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20090210270 | Systems and methods for providing direct communication from personalized targeted advertisements - A method of creating a personalized targeted advertisement for displaying on a webpage of a website is disclosed. The personalized targeted advertisement includes features to provide direct communication between a sender and a recipient of the personalized targeted advertisement. A selection of an advertisement template from a plurality of advertisement templates is detected. Then, a media file and a custom message are received to build the personalized targeted advertisement. The personalized targeted advertisement is then sent to the recipient identified by a unique identification. The advertising server is notified so that the personalized targeted advertisement can be displayed when the recipient identified by the unique identification logs into the website. | 08-20-2009 |
Laura Lei, Los Angeles, CA US
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20100226907 | PURIFICATION OF BUTYRYLCHOLINESTERASE USING MEMBRANE ADSORPTION - The present invention relates to purification of butyrylcholinesterase using anion exchange material, where the butyrylcholinesterase content is enriched at least 10 fold per total protein in the composition. | 09-09-2010 |
20110066111 | Stable co-formulation of hyaluronidase and immunoglobulin, and methods of use thereof - Provided herein are stable co-formulations of immunoglobulin and hyaluronidase that are stable to storage in liquid form at room temperature for at least 6 months and at standard refrigerator temperatures for 1-2 years. Such co-formulations can be used in methods of treating IG-treatable diseases or conditions by subcutaneous administration. | 03-17-2011 |
Lawrence C. Lei, Milpitas, CA US
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20090214786 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 08-27-2009 |
20100316800 | MULTI-STATION DEPOSITION APPARATUS AND METHOD - A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles. | 12-16-2010 |
20140130739 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided. | 05-15-2014 |
Louis Y. Lei, San Leandro, CA US
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20140085307 | AUTOMATIC GENERATION OF HIERARCHY VISUALIZATIONS - A method, system, and computer program product for presentation of data in enterprise applications. The method form commences by identifying a hierarchy of data maintained by an enterprise application (e.g., in a database). A hierarchy processor or other processor reads the hierarchy of data to configure a graphical representation of the hierarchy of data to be displayed on a display device. The graphical representation includes a graphical display indication corresponding to one or more relationships between items in the displayed hierarchy. Additional display indications include a calculated summary value of aggregated data, such as where the aggregated data is calculated using an aggregation function. | 03-27-2014 |
20140095390 | MOBILE TRANSACTION APPROVALS - A method, system, and computer program product for delivery of enterprise application data to users. Processing commences by identifying an enterprise application running on a server (e.g., an application server) for which approval processing is to be performed to approve transactions pertaining to the enterprise application. Further processing aggregates groups of transactions, and generates transaction approval display data (e.g., for display screens) that can be displayed on a mobile device (e.g., a smartphone, a mobile terminal, etc.). A sending module participates in sending the transaction approval display data to the mobile device, after which a mobile user performs approvals (e.g., singly or in groups), and transmits data back to (e.g., as an approval or as a disapproval or both). The approvals or disapprovals responsive to the displayed transaction approval display data are processed (e.g., as approvals or as disapprovals or both) for retrieval by the enterprise application. | 04-03-2014 |
Mingzu Lei, San Jose, CA US
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20090180968 | Metal Coordination Complexes Of Volatile Drugs - The present disclosure provides a drug delivery device comprising a housing defining an airway, wherein the airway comprises at least one air inlet and a mouthpiece having at least one air outlet, at least one heated metal substrate disposed within the airway, at least one drug disposed on the at least one heated metal substrate. Drugs that can be complexed with metals or metal salts and could be deposited as thin films on heated metal substrate for generating thermal condensation aerosols are particularly suited. The metal substrate could be electrically or chemically heated. Further, the chemically heated metal source could be activated by an igniter that generates heat or spark. | 07-16-2009 |
20100006092 | Aerosol Drug Delivery Device Incorporating Percussively Activated Heat Packages - Aerosol drug delivery devices incorporating percussively activated heat packages are disclosed. The heat packages include a percussive igniter and a fuel capable of undergoing an exothermic oxidation-reduction reaction when ignited by the percussive igniter. The drug delivery devices disclosed can be activated by an actuation mechanism to vaporize a thin solid film comprising a drug disposed on the exterior of a hat package. Metal coordination complexes of volatile drugs, and in particular nicotine, from which the drug can be selectively vaporized when heated are also disclosed. The use of aerosol drug delivery devices comprising thin films of nicotine metal salt complexes for the treatment of nicotine craving and for effecting smoking cessation are also disclosed. | 01-14-2010 |
20100065052 | Heating Units - A heating unit comprises a substrate having a first surface and a second surface. A chemical reactant material capable of undergoing an exothermic reaction is disposed on at least a portion of the first surface of the substrate. An igniter is in proximity with the chemical reactant material. A layer of adhesive material overlays at least a portion of at least one of the chemical reactant material and the first surface of the substrate. Other embodiments of the heating unit include a first and a second substrate, each having first and second surfaces positioned with the first surfaces opposing each other in a sandwich construction. A chemical reactant material is disposed on at least a portion of the first surface of at least one of the substrates. The first and the second substrates are sealed together to define a cavity containing the chemical reactant material and an igniter is provided in proximity with the chemical reactant material. | 03-18-2010 |
20100068154 | Printable Igniters - An igniter comprises at least two conductors in the spaced-apart configuration and an electrically conductive layer bridging the at least two conductors, wherein the conductive layer has an electrical resistance greater than an electrical resistance of the at least two conductors. In one embodiment, the at least two conductors and the electrically conductive layer comprise a conductive ink, which may be the same conductive ink having different dimensions. A supplementary initiator composition may be deposited on or incorporated into the conductive layer. In a process for producing the igniter, the electrically conductive layer and the at least two conductors are printed on a non-electrically conducting substrate. Also disclosed are a method for igniting a combustible composition using the igniter, a method for producing an aerosol drug using the igniter, a method for providing a dose of a drug to a human patient using the igniter, a drug delivery device comprising the igniter and a drug supply unit comprising the igniter. | 03-18-2010 |
20100068155 | Reactant Formulations and Methods for Controlled Heating - Disclosed herein are reactant formulations capable of undergoing an exothermic chemical reaction. The reactant formulations comprise a metal reducing agent, a metal-containing oxidizing agent, and manganese oxide in an amount effective to control a temperature profile of the reactant formulation. The manganese oxide may be, for example and without limitation, MnO, MnO | 03-18-2010 |
20100300433 | Substrates for Enhancing Purity or Yield of Compounds Forming a Condensation Aerosol - A device for vaporizing a composition. The device comprises a thermally conductive substrate having a surface, the surface comprising a thermally conductive surface structure. A dry composition capable of a solid to liquid phase change upon being heated to at least a select temperature is disposed on the surface structure. The surface structure is configured to form liquid droplets of the composition upon heating of the surface structure to at least the select temperature. The liquid droplets have a median diameter less than a median diameter of liquid droplets formed on a planar substrate surface heated to at least the select temperature. | 12-02-2010 |
20110253135 | METAL COORDINATION COMPLEXES OF VOLATILE DRUGS - The present disclosure provides a drug delivery device comprising a housing defining an airway, wherein the airway comprises at least one air inlet and a mouthpiece having at least one air outlet, at least one heated metal substrate disposed within the airway, at least one drug disposed on the at least one heated metal substrate. Drugs that can be complexed with metals or metal salts and could be deposited as thin films on heated metal substrate for generating thermal condensation aerosols are particularly suited. The metal substrate could be electrically or chemically heated. Further, the chemically heated metal source could be activated by an igniter that generates heat or spark. | 10-20-2011 |
Norman Lei, San Francisco, CA US
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20130236757 | CELL ASSEMBLIES WITH NEUTRAL CASES - Provided are electrochemical cell assemblies and methods of fabricating thereof. A cell assembly includes an anode containing lithium titanium oxide and a cathode forming a jellyroll together with the anode. Each of the electrodes is connected to a separate cap and electrically insulated from the case. As such, the case is electrochemically neutral and may be made from a larger selection of materials. For example, a case may be made from steel that would otherwise dissolve if exposed to the anode potential during cycling of the battery. Some of these case materials simplify processing and sealing characteristics. In certain embodiments, a case may be crimped around each of the caps and corresponding gaskets to provide sealing interfaces. The caps or at least their surfaces exposed to the electrolyte are made from materials that are electrochemically stable at corresponding potentials of the electrodes. | 09-12-2013 |
20130337339 | LOW MOLECULAR WEIGHT SALTS COMBINED WITH FLUORINATED SOLVENTS FOR ELECTROLYTES - Provided are electrochemical cells and electrolytes used to build such cells. An electrolyte includes at least one salt having a molecular weight less than about 250. Such salts allow forming electrolytes with higher salt concentrations and ensure high conductivity and ion transport in these electrolytes. The low molecular weight salt may have a concentration of at least about 0.5M and may be combined with one or more other salts, such as linear and cyclic imide salts and/or methide salts. The concentration of these additional salts may be less than that of the low molecular weight salt, in some embodiments, twice less. The additional salts may have a molecular weight greater than about 250. The electrolyte may also include one or more fluorinated solvents and may be capable of maintaining single phase solutions at between about −30° C. to about 80° C. | 12-19-2013 |
20130337340 | COMBINATIONS OF FLUORINATED SOLVENTS WITH IMIDE SALTS OR METHIDE SALTS FOR ELECTROLYTES - Provided are electrochemical cells and electrolytes used to build such cells. The electrolytes include imide salts and/or methide salts as well as fluorinated solvents capable of maintaining single phase solutions at between about −30° C. to about 80° C. The fluorinated solvents, such as fluorinated carbonates, fluorinated esters, and fluorinated esters, are less flammable than their non-fluorinated counterparts and improve safety characteristics of cells containing these solvents. The amount of fluorinated solvents in electrolytes may be between about 30% and 80% by weight not accounting weight of the salts. Linear and cyclic imide salts, such as LiN(SO | 12-19-2013 |
Shufei Lei, Alemeda, CA US
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20100250463 | INFORMATION-DELIVERY SYSTEM AND METHOD AND APPLICATIONS EMPLOYING SAME - In one embodiment, an information-delivery system includes a first mechanism for identifying an entity for which to gather information and providing identity information in response thereto. A second mechanism employs the identity information to retrieve rating information pertaining to the entity, wherein the scoring information includes quantified information pertaining to one or more measures of performance, and the user's ethical preferences. The rating information includes environmental information, health information, and/or social information. The rating information further includes components that are each associated with a user-configurable weight. The second mechanism includes plural data sources, wherein each data source is associated with a user-configurable data-source weight. This allows a user to scan a product, receive information on its social, environmental, and health performance, all screened through the user's personal preferences. | 09-30-2010 |
Shunan Lei, Pleasant Hill, CA US
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20130098353 | Solar water heating system with double-row vacuum tubes - The invention provides a solar water heating apparatus with double-row vacuum tubes coupled to a water tank made of stainless steel or enamel. Each of the vacuum tubes is made of an exterior tube and an interior tube separated by a vacuum. The exterior tube is transparent. The interior tube is covered with a layer of light-absorption material. When sunlight shines on the vacuum tube, the water in the tank and the water in the interior tube circulate by convection. | 04-25-2013 |
Tse Yu Lei, San Jose, CA US
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20110228669 | TECHNIQUES FOR LINK REDUNDANCY IN LAYER 2 NETWORKS - Techniques for facilitating link redundancy using an enhanced version of Virtual Switch Redundancy Protocol (VSRP), referred to herein as VSRP2. In one set of embodiments, a group of Layer 2 and/or Layer 2/3 devices (switches) can act in concert as a VSRP2 virtual switch. A first switch in the group (a VSRP2 master switch) can forward, via a first link, data traffic to/from a network device in a connected Layer 2 network. A second switch in the group (a VSRP2 backup switch) can block, at a second link, data traffic to/from the same network device. If the first link fails or otherwise becomes unavailable, the VSRP2 backup switch can detect the link failure and begin forwarding, via the second link, data traffic to/from the network device. In this manner, redundancy can be provided at the link level between the VSRP2 virtual switch and the Layer 2 network. | 09-22-2011 |
20130003601 | EXTERNAL LOOP DETECTION FOR AN ETHERNET FABRIC SWITCH - One embodiment of the present invention provides a switch. The switch includes a local identifier associated with the switch, a receiving interface, a loop detection mechanism, and an interface control mechanism. The receiving interface identifies a loop-detection frame which includes an identifier associated with originating switch of the frame. The loop detection mechanism detects a loop based on a match of the identifier associated with the originating switch and the local identifier. The interface control mechanism is coupled to the loop detection mechanism and precludes, in response to detecting a loop, the receiving interface from forwarding frames corresponding to the loop. | 01-03-2013 |
20130003608 | SPANNING-TREE BASED LOOP DETECTION FOR AN ETHERNET FABRIC SWITCH - One embodiment of the present invention provides a switch. The switch includes a local database, a packet processor, a data management module, and a tree construction module. The packet processor extracts spanning tree information associated with a remote switch. The data management module stores the extracted spanning tree information in the local database. The tree construction module assigns an interface state associated with a spanning tree to a local interface based on the extracted spanning tree information. | 01-03-2013 |
Vai-Man Lei, Torrance, CA US
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20100319343 | TURBOCHARGER WITH TWO-STAGE COMPRESSOR, INCLUDING A TWIN-WHEEL PARALLEL-FLOW FIRST STAGE - A single-shaft exhaust gas-driven turbocharger includes two parallel-flow first-stage centrifugal compressors in series with a single second-stage centrifugal compressor, and a one-stage turbine arranged to drive both the first- and second-stage centrifugal compressors via a single shaft on which the compressors and turbine are fixedly mounted. The compressor housing defines from one to a plurality of circumferentially spaced inlet ducts for the second wheel of the first stage, and from one to a plurality of circumferentially spaced interstage ducts leading from a vaneless diffuser of the first stage into the inlet of the second stage. | 12-23-2010 |
20120294703 | DIFFUSER DIVIDER - A diffuser divider shaped as disc with a central axis, a leading edge disposed at an inner radius about the central axis, a trailing edge disposed at an outer radius about the central axis, an upper surface disposed between the leading edge and the trailing edge, a lower surface disposed between the leading edge and the trailing edge and one or more mounting features configured to mount the disc in a diffuser section configured to receive air compressed by two compressor wheel faces and to direct the compressed air to a volute. Such a divider can define throats in a diffuser section of a compressor assembly. Various other examples of devices, assemblies, systems, methods, etc., are also disclosed. | 11-22-2012 |
20140341727 | Centrifugal Compressor With Casing Treatment For Surge Control - A centrifugal compressor for compressing a fluid comprises a compressor wheel having a plurality of circumferentially spaced blades, and a compressor housing in which the compressor wheel is mounted. The compressor housing includes an inlet duct through which the fluid enters in an axial direction and is led by the inlet duct into the compressor wheel, and a wheel shroud located radially adjacent the tips of the blades. The wheel shroud has a port for bleeding off a portion of air flowing through the compressor. The bleed air enters an annular space, flows forward, and is injected back into the inlet flow through a plurality of circumferentially spaced slots defined through the wheel shroud. The slots are open at a leading edge of the wheel shroud. | 11-20-2014 |
Wei Lei, San Jose, CA US
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20140027664 | TERNARY TUNGSTEN BORIDE NITRIDE FILMS AND METHODS FOR FORMING SAME - Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses. | 01-30-2014 |
Wei Lei, Santa Clara, CA US
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20110059608 | METHOD FOR IMPROVING ADHESION OF LOW RESISTIVITY TUNGSTEN/TUNGSTEN NITRIDE LAYERS - Methods of improving the adhesion of low resistivity tungsten/tungsten nitride layers are provided. Low resistivity tungsten/tungsten nitride layers with good adhesion are formed by treating a tungsten or tungsten nitride layer before depositing low resistivity tungsten. Treatments include a plasma treatment and a temperature treatment. According to various embodiments, the treatment methods involve different gaseous atmospheres and plasma conditions. | 03-10-2011 |
20120077342 | SYSTEMS AND METHODS FOR SELECTIVE TUNGSTEN DEPOSITION IN VIAS - A method for processing a substrate includes providing a substrate including a metal layer, a dielectric layer arranged on the metal layer, and at least one of a via and a trench formed in the dielectric layer; depositing a metal using chemical vapor deposition (CVD) during a first deposition period, wherein the first deposition period is longer than a first nucleation period that is required to deposit the metal on the metal layer; stopping the first deposition period prior to a second nucleation delay period, wherein the second nucleation period is required to deposit the metal on the dielectric layer; performing the depositing and the stopping N times, where N is an integer greater than or equal to one; and after the performing, depositing the metal using CVD during a second deposition period that is longer than the second nucleation delay period. | 03-29-2012 |
Wei-Sheng Lei, San Jose, CA US
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20090255911 | LASER SCRIBING PLATFORM AND HYBRID WRITING STRATEGY - Laser scribing can be performed on a workpiece ( | 10-15-2009 |
20110033970 | METHODS AND RELATED SYSTEMS FOR THIN FILM LASER SCRIBING DEVICES - Methods and related systems for fabricating a solar-cell assembly are provided. An example method comprises forming a series of layers and scribing a series of aligned interconnect lines in the layers prior to forming any isolation line related features. The example method provides for the use of contiguously-scribed interconnect lines as compared to an existing method where at least one interconnect line is segmented to avoid scribing through a previously-formed isolation line related feature located where an isolation line is to be scribed. The ability to use contiguously-scribed interconnect lines may improve the throughput of the fabrication process. | 02-10-2011 |
20110132884 | LASER MODULES AND PROCESSES FOR THIN FILM SOLAR PANEL LASER SCRIBING - Laser systems for laser scribing are provided. The systems include a remote module coupled to a laser module through a cable. The remote module includes a controller and a chiller. The laser module has at least a laser source and a cooling plate. The laser module is operable to remove material from at least a portion of a workpiece. The systems also include a plurality of termination modules coupled to the laser module through a plurality of optical fibers. Each of the termination modules includes a mechanical interface. The mechanical interface is coupled to a respective optical fiber. The systems further include a plurality of scanning devices operable to control a position of the output from the laser. Each of the scanning devices is coupled to a respective mechanical interface. | 06-09-2011 |
20110312157 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a femtosecond-based laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-22-2011 |
20120322233 | WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer washed off. | 12-20-2012 |
20120322234 | IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH - Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off. | 12-20-2012 |
20120322235 | WAFER DICING USING HYBRID GALVANIC LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a galvanic laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-20-2012 |
20120322236 | WAFER DICING USING PULSE TRAIN LASER WITH MULTIPLE-PULSE BURSTS AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a pulse train laser scribing process using multiple-pulse bursts to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 12-20-2012 |
20120322237 | LASER AND PLASMA ETCH WAFER DICING USING PHYSICALLY-REMOVABLE MASK - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The patterned mask is then separated from the singulated integrated circuits. | 12-20-2012 |
20120322238 | LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution. | 12-20-2012 |
20120322239 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 12-20-2012 |
20120322241 | MULTI-LAYER MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a first mask material layer soluble in a solvent over the semiconductor substrate and a second mask material layer, insoluble in the solvent, over the first mask material layer. The multi-layered mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then plasma etched through the gaps in the patterned mask to singulate the IC with the second mask material layer protecting the first mask material layer for at least a portion of the plasma etch. The soluble material layer is dissolved subsequent to singulation to remove the multi-layered mask. | 12-20-2012 |
20120322242 | MULTI-STEP AND ASYMMETRICALLY SHAPED LASER BEAM SCRIBING - Methods of dicing substrates by both laser scribing and plasma etching. A method includes laser ablating material layers, the ablating leading with a first irradiance and following with a second irradiance, lower than the first. Multiple passes of a beam adjusted to have different fluence level or multiple laser beams having various fluence levels may be utilized to ablate mask and IC layers to expose a substrate with the first fluence level and then clean off redeposited materials from the trench bottom with the second fluence level. A laser scribe apparatus employing a beam splitter may provide first and second beams of different fluence from a single laser. | 12-20-2012 |
20130017668 | WAFER DICING USING HYBRID SPLIT-BEAM LASER SCRIBING PROCESS WITH PLASMA ETCHAANM Lei; Wei-ShengAACI San JoseAAST CAAACO USAAGP Lei; Wei-Sheng San Jose CA USAANM Eaton; BradAACI Menlo ParkAAST CAAACO USAAGP Eaton; Brad Menlo Park CA USAANM Yalamanchili; Madhava RaoAACI Morgan HillAAST CAAACO USAAGP Yalamanchili; Madhava Rao Morgan Hill CA USAANM Singh; SaravjeetAACI Santa ClaraAAST CAAACO USAAGP Singh; Saravjeet Santa Clara CA USAANM Kumar; AjayAACI CupertinoAAST CAAACO USAAGP Kumar; Ajay Cupertino CA USAANM Iyer; AparnaAACI SunnyvaleAAST CAAACO USAAGP Iyer; Aparna Sunnyvale CA US - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-17-2013 |
20130267076 | WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 10-10-2013 |
20130280890 | LASER AND PLASMA ETCH WAFER DICING USING UV-CURABLE ADHESIVE FILM - Laser and plasma etch wafer dicing using UV-curable adhesive films is described. In an example, a method includes forming a mask above the semiconductor wafer. The semiconductor wafer is coupled to a carrier substrate by a UV-curable adhesive film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The UV-curable adhesive film is then irradiated with ultra-violet (UV) light. The singulated integrated circuits are then detached from the carrier substrate. | 10-24-2013 |
20130299088 | LASER AND PLASMA ETCH WAFER DICING USING WATER-SOLUBLE DIE ATTACH FILM - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The semiconductor wafer is disposed on a water-soluble die attach film. The mask covers and protects the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to form singulated integrated circuits. The water-soluble die attach film is then patterned with an aqueous solution. | 11-14-2013 |
20140004685 | LASER AND PLASMA ETCH WAFER DICING WITH A DOUBLE SIDED UV-CURABLE ADHESIVE FILM | 01-02-2014 |
20140015109 | METHOD OF DICED WAFER TRANSPORTATION - Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape. | 01-16-2014 |
20140017879 | UNIFORM MASKING FOR WAFER DICING USING LASER AND PLASMA ETCH - Uniform masking for wafer dicing using laser and plasma etch is described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits having bumps or pillars includes uniformly spinning on a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 01-16-2014 |
20140017880 | LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING - Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs. | 01-16-2014 |
20140017881 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND CLEAN SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a multi-plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch. The isotropic etch removes anisotropic etch byproducts, roughness, and/or scalloping from the anisotropically etched die sidewalls after die singulation. | 01-16-2014 |
20140017882 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 01-16-2014 |
20140057414 | MASK RESIDUE REMOVAL FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in the patterned mask to singulate the IC. The mask is removed and metallized bumps on the diced substrate are contacted with an inorganic acid solution to remove mask residues. | 02-27-2014 |
20140065797 | IN-SITU DEPOSITED MASK LAYER FOR DEVICE SINGULATION BY LASER SCRIBING AND PLASMA ETCH - Methods of dicing substrates by both laser scribing and plasma etching. A method includes forming an in-situ mask with a plasma etch chamber by accumulating a thickness of plasma deposited polymer to protect IC bump surfaces from a subsequent plasma etch. Second mask materials, such as a water soluble mask material may be utilized along with the plasma deposited polymer. At least some portion of the mask is patterned with a femtosecond laser scribing process to provide a patterned mask with trenches. The patterning exposing regions of the substrate between the ICs in which the substrate is plasma etched to singulate the IC and the water soluble material layer washed off. | 03-06-2014 |
20140106542 | LASER AND PLASMA ETCH WAFER DICING WITH PARTIAL PRE-CURING OF UV RELEASE DICING TAPE FOR FILM FRAME WAFER APPLICATION - Methods and systems of laser and plasma etch wafer dicing using UV-curable adhesive films. A method includes forming a mask covering ICs formed on the wafer. The semiconductor wafer is coupled to a film frame by a UV-curable adhesive film. A pre-cure of the UV-curable adhesive film cures a peripheral portion of the adhesive extending beyond an edge of the wafer to improve the exposed adhesive material's resistance to plasma etch and reduce hydrocarbon redeposition within the etch chamber. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the ICs. A center portion of the UV-curable adhesive is then cured and the singulated ICs detached from the film. | 04-17-2014 |
20140120697 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 05-01-2014 |
20140120698 | WAFER DICING USING HYBRID MULTI-STEP LASER SCRIBING PROCESS WITH PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a multi-step laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits. | 05-01-2014 |
20140144585 | HYBRID LASER AND PLASMA ETCH WAFER DICING USING SUBSTRATE CARRIER - Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The semiconductor wafer is supported by a substrate carrier. The mask is then patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits while supported by the substrate carrier. | 05-29-2014 |
20140174659 | WATER SOLUBLE MASK FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs are disclosed. A method includes forming a mask comprising a water soluble material layer over the semiconductor substrate. The mask is patterned with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is then etched through the gaps in the patterned mask to singulate the IC and the water soluble material layer is washed off. | 06-26-2014 |
20140179084 | WAFER DICING FROM WAFER BACKSIDE - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. For example, a method includes applying a protection tape to a wafer front side, the wafer having a dicing tape attached to the wafer backside. The dicing tape is removed from the wafer backside to expose a die attach film disposed between the wafer backside and the dicing tape. Alternatively, if no die attach film is initially disposed between the wafer backside and the dicing tape, a die attach film is applied to the wafer backside at this operation. A water soluble mask is applied to the wafer backside. Laser scribing is performed on the wafer backside to cut through the mask, the die attach film and the wafer, including all layers included within the front side and backside of the wafer. A plasma etch is performed to treat or clean surfaces of the wafer exposed by the laser scribing. A wafer backside cleaning is performed and a second dicing tape is applied to the wafer backside. The protection tape is the removed from the wafer front side. | 06-26-2014 |
20140213041 | LASER AND PLASMA ETCH WAFER DICING WITH ETCH CHAMBER SHIELD RING FOR FILM FRAME WAFER APPLICATIONS - Laser and plasma etch wafer dicing where a mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The semiconductor wafer is coupled to a film frame by an adhesive film. The mask is patterned by laser scribing to provide a patterned mask with gaps. The laser scribing exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is plasma etched through the gaps in the patterned mask while the film frame is maintained at an acceptably low temperature with a chamber shield ring configured to sit beyond the wafer edge and cover the frame. The shield ring may be raised and lowered, for example, on lifter pins to facilitate transfer of the wafer on frame. | 07-31-2014 |
20140213042 | SUBSTRATE DICING BY LASER ABLATION & PLASMA ETCH DAMAGE REMOVAL FOR ULTRA-THIN WAFERS - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask, patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps, and ablating through an entire thickness of a semiconductor substrate to singulate the IC. Following laser-based singulation, a plasma etch is performed to remove a layer of semiconductor sidewall damaged by the laser scribe process. In the exemplary embodiment, a femtosecond laser is utilized and a 1-3 μm thick damage layer is removed with the plasma etch. Following the plasma etch, the mask is removed, rendering the singulated die suitable for assembly/packaging. | 07-31-2014 |
20140273401 | SUBSTRATE LASER DICING MASK INCLUDING LASER ENERGY ABSORBING WATER-SOLUBLE FILM - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask comprising a laser energy absorbing material layer soluble in water over the semiconductor substrate. The laser energy absorbing material layer may be UV curable, and either remain uncured or be cured prior to removal with a water rinse. The mask is patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the laser energy absorbing mask protecting the ICs for during the plasma etch. The soluble mask is then dissolved subsequent to singulation. | 09-18-2014 |
20140346641 | WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits. | 11-27-2014 |
20140363952 | LASER, PLASMA ETCH, AND BACKSIDE GRIND PROCESS FOR WAFER DICING - Front side laser scribing and plasma etch are performed followed by back side grind to singulate integrated circuit chips (ICs). A mask is formed covering ICs formed on the wafer, as well as any bumps providing an interface to the ICs. The mask is patterned by laser scribing to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer, below thin film layers from which the ICs are formed. The semiconductor wafer is then etched through the gaps in the patterned mask to advance a front of an etched trench partially through the semiconductor wafer thickness. The front side mask is removed, a backside grind tape applied to the front side, and a back side grind performed to reach the etched trench, thereby singulating the ICs. | 12-11-2014 |
20140367041 | WAFER DICING USING FEMTOSECOND-BASED LASER AND PLASMA ETCH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width. | 12-18-2014 |
20140377937 | METHOD OF COATING WATER SOLUBLE MASK FOR LASER SCRIBING AND PLASMA ETCH - Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits. | 12-25-2014 |
20150011073 | LASER SCRIBING AND PLASMA ETCH FOR HIGH DIE BREAK STRENGTH AND SMOOTH SIDEWALL - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation. The laser scribe process may be used to cleanly remove a mask layer, organic and inorganic dielectric layers, and device layers. The laser etch process may then be terminated upon exposure of, or partial etch of, the wafer or substrate. In embodiments, a hybrid plasma etching approach is employed to dice the wafers where an isotropic etch is employed to improve the die sidewall following an anisotropic etch with a plasma based on a combination of NF | 01-08-2015 |
20150028446 | WAFER DICING WITH WIDE KERF BY LASER SCRIBING AND PLASMA ETCHING HYBRID APPROACH - Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, approaches for wafer dicing with wide kerf by using a laser scribing and plasma etching hybrid approach are described. For example, a method of dicing a semiconductor wafer including a plurality of integrated circuits separated by dicing streets involves forming a mask above the semiconductor wafer, the mask having a layer covering and protecting the integrated circuits. The method also involves patterning the mask with a laser scribing process to provide a patterned mask having a pair of parallel gaps for each dicing street, exposing regions of the semiconductor wafer between the integrated circuits. Each gap of each pair of parallel gaps is separated by a distance. The method also involves etching the semiconductor wafer through the gaps in the patterned mask to singulate the integrated circuits. | 01-29-2015 |
20150037915 | METHOD AND SYSTEM FOR LASER FOCUS PLANE DETERMINATION IN A LASER SCRIBING PROCESS - In embodiments, a method of laser scribing a mask disposed over a semiconductor wafer includes determining a height of the semiconductor over which a mask layer is disposed prior to laser scribing the mask layer. In one embodiment the method includes: determining a height of the semiconductor wafer under the mask in a dicing street using an optical sensor and patterning the mask with a laser scribing process. The laser scribing process focuses a scribing laser beam at a plane corresponding to the determined height of the semiconductor wafer in the dicing street. Examples of determining the height of the semiconductor wafer can include directing a laser beam to the dicing street of the semiconductor wafer, which is transmitted through the mask and reflected from the wafer, and identifying an image on a surface of the wafer under the mask with a camera. | 02-05-2015 |
20150064878 | WAFER DICING METHOD FOR IMPROVING DIE PACKAGING QUALITY - In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation while also removing an oxidation layer from metal bumps on the wafer. In one embodiment, a method includes forming a mask over the semiconductor wafer covering the plurality of ICs, the plurality of ICs including metal bumps or pads with an oxidation layer. The method includes patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the ICs. The method includes plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the plurality of ICs and remove the oxidation layer from the metal bumps or pads. | 03-05-2015 |
20150079760 | ALTERNATING MASKING AND LASER SCRIBING APPROACH FOR WAFER DICING USING LASER SCRIBING AND PLASMA ETCH - Alternating masking and laser scribing approaches for wafer dicing using laser scribing and plasma etch are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits includes forming a first mask above the semiconductor wafer. The first mask is patterned with a first laser scribing process to provide a patterned first mask with a first plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the first mask with the first laser scribing process, a second mask is formed above the patterned first mask. The second mask is patterned with a second laser scribing process to provide a patterned second mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. The second plurality of scribe lines is aligned with and overlaps the first plurality of scribe lines. The semiconductor wafer is plasma etched through the second plurality of scribe lines to singulate the integrated circuits. | 03-19-2015 |
20150079761 | Wafer Dicing from Wafer Backside and Front Side - Approaches for backside laser scribe plus front side laser scribe and plasma etch dicing of a wafer or substrate are described. For example, a method of dicing a semiconductor wafer having a plurality of integrated circuits on a front side thereof and metallization on a backside thereof involves patterning the metallization on the backside with a first laser scribing process to provide a first plurality of laser scribe lines on the backside. The method also involves forming a mask on the front side. The method also involves patterning, from the front side, the mask with a second laser scribing process to provide a patterned mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits, wherein the second plurality of scribe lines is aligned with the first plurality of scribe lines. The method also involves plasma etching the semiconductor wafer through the second plurality of scribe lines to singulate the integrated circuits. | 03-19-2015 |
Xin Lei, Sunnyvale, CA US
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20120330664 | METHOD AND APPARATUS FOR COMPUTING GAUSSIAN LIKELIHOODS - The present invention relates to a method and apparatus for computing Gaussian likelihoods. One embodiment of a method for processing a speech sample includes generating a feature vector for each frame of the speech signal, evaluating the feature vector in accordance with a hierarchical Gaussian shortlist, and producing a hypothesis regarding a content of the speech signal, based on the evaluating. | 12-27-2012 |
20140379346 | VIDEO ANALYSIS BASED LANGUAGE MODEL ADAPTATION - Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for receiving audio data obtained by a microphone of a wearable computing device, wherein the audio data encodes a user utterance, receiving image data obtained by a camera of the wearable computing device, identifying one or more image features based on the image data, identifying one or more concepts based on the one or more image features, selecting one or more terms associated with a language model used by a speech recognizer to generate transcriptions, adjusting one or more probabilities associated with the language model that correspond to one or more of the selected terms based on the relevance of one or more of the selected terms to the one or more concepts, and obtaining a transcription of the user utterance using the speech recognizer. | 12-25-2014 |
Xin Lei, Mountain View, CA US
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20140025378 | Multi-Stage Speaker Adaptation - A first gender-specific speaker adaptation technique may be selected based on characteristics of a first set of feature vectors that correspond to a first unit of input speech. The first set of feature vectors may be configured for use in automatic speech recognition (ASR) of the first unit of input speech. A second set of feature vectors, which correspond to a second unit of input speech, may be modified based on the first gender-specific speaker adaptation technique. The modified second set of feature vectors may be configured for use in ASR of the second unit of input speech. A first speaker-dependent speaker adaptation technique may be selected based on characteristics of the second set of feature vectors. A third set of feature vectors, which correspond to a third unit of speech, may be modified based on the first speaker-dependent speaker adaptation technique. | 01-23-2014 |
20140163985 | Multi-Stage Speaker Adaptation - A first gender-specific speaker adaptation technique may be selected based on characteristics of a first set of feature vectors that correspond to a first unit of input speech. The first set of feature vectors may be configured for use in automatic speech recognition (ASR) of the first unit of input speech. A second set of feature vectors, which correspond to a second unit of input speech, may be modified based on the first gender-specific speaker adaptation technique. The modified second set of feature vectors may be configured for use in ASR of the second unit of input speech. A first speaker-dependent speaker adaptation technique may be selected based on characteristics of the second set of feature vectors. A third set of feature vectors, which correspond to a third unit of speech, may be modified based on the first speaker-dependent speaker adaptation technique. | 06-12-2014 |
Xinjian Lei, San Jose, CA US
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20130059066 | Method of forming strontium titanate films - Embodiments of the current invention include methods of forming a strontium titanate (SrTiO | 03-07-2013 |
Xinya Lei, Sunnyvale, CA US
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20100311201 | METHOD OF FORMING SUBSTRATE FOR USE IN IMAGER DEVICES - A method of fabricating a semiconductor substrate structure comprises forming an oxide region in contact with a first semiconductor, e.g. silicon, substrate, implanting P-type dopants into the first semiconductor substrate to form a P-doped region, bonding the oxide region to a second semiconductor, e.g. silicon, substrate, and removing a portion of the first semiconductor substrate before or after implanting. | 12-09-2010 |
Ying Lei, Menlo Park, CA US
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20130218835 | Method and System for Storing, Categorizing and Distributing Information Concerning Relationships Between Data - A method and system for storing, categorizing and distributing information concerning relationships between data that involves the use of tags in place of traditional, mutually-exclusive file folders by querying any number of servers for information regarding a tag, associating the tag with data on an electronic device, and suggesting other tags that might be relevant as well. | 08-22-2013 |
Yu Lei, San Jose, CA US
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20110263115 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 10-27-2011 |
20110298062 | METAL GATE STRUCTURES AND METHODS FOR FORMING THEREOF - Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode. | 12-08-2011 |
Yu Lei, Foster City, CA US
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20120252207 | POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS - Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process. | 10-04-2012 |
20120258602 | Method for Metal Deposition Using Hydrogen Plasma - Methods for formation and treatment of pure metal layers using CVD and ALD techniques are provided. In one or more embodiments, the method includes forming a metal precursor layer and treating the metal precursor layer to a hydrogen plasma to reduce the metal precursor layer to form a metal layer. In one or more embodiments, treating the metal precursor layer includes exposing the metal precursor layer to a high frequency-generated hydrogen plasma. Methods of preventing a hydrogen plasma from penetrating a metal precursor layer are also provided. | 10-11-2012 |
20130189840 | METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES - Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture. | 07-25-2013 |
20130221445 | Atomic Layer Deposition Methods For Metal Gate Electrodes - Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN. | 08-29-2013 |
20130295759 | Methods For Manufacturing Metal Gates - Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first. | 11-07-2013 |
20140017408 | Deposition Of N-Metal Films Comprising Aluminum Alloys - Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl | 01-16-2014 |
20140273515 | INTEGRATED PLATFORM FOR FABRICATING N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) DEVICES - Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO | 09-18-2014 |
Yu Lei, Belmont, CA US
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20130260555 | METHOD OF ENABLING SEAMLESS COBALT GAP-FILL - Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved. | 10-03-2013 |
20140120712 | NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS - Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MX | 05-01-2014 |
Yuan Lei, Sunnyvale, CA US
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20140042641 | MIDDLE-OF-THE-LINE CONSTRUCTS USING DIFFUSION CONTACT STRUCTURES - An approach for providing MOL constructs using diffusion contact structures is disclosed. Embodiments include: providing a first diffusion region in a substrate; providing, via a first lithography process, a first diffusion contact structure; providing, via a second lithography process, a second diffusion contact structure; and coupling the first diffusion contact structure to the first diffusion region and the second diffusion contact structure. Embodiments include: providing a second diffusion region in the substrate; providing a diffusion gap region between the first and second diffusion regions; providing the diffusion contact structure over the diffusion gap region; and coupling, via the diffusion contact structure, the first and second diffusion regions. | 02-13-2014 |
Yun Lei, Palo Alto, CA US
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20130339018 | MULTI-SAMPLE CONVERSATIONAL VOICE VERIFICATION - A system and method of verifying the identity of an authorized user in an authorized user group through a voice user interface for enabling secure access to one or more services via a mobile device includes receiving first voice information from a speaker through the voice user interface of the mobile device, calculating a confidence score based on a comparison of the first voice information with a stored voice model associated with the authorized user and specific to the authorized user, interpreting the first voice information as a specific service request, identifying a minimum confidence score for initiating the specific service request, determining whether or not the confidence score exceeds the minimum confidence score, and initiating the specific service request if the confidence score exceeds the minimum confidence score. | 12-19-2013 |