Patent application number | Description | Published |
20090061558 | METHOD OF FABRICATING ORGANIC ELECTRONIC DEVICE - A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a patterned spacing layer on the flexible substrate with a spacing material deposition source and a mask; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate. | 03-05-2009 |
20090061560 | METHOD OF FABRICATING ORGANIC ELECTRONIC DEVICE - A fabricating method of organic electronic device is provided. The method comprises: providing a flexible substrate; fabricating a plurality of organic elements on the flexible substrate; depositing a spacing material layer on the flexible substrate; patterning the spacing material layer to form a patterned spacing layer; and arranging a cover substrate on the patterned spacing layer, and sealing the edges of the flexible substrate and the cover substrate with a sealant, wherein the patterned spacing layer is used to maintain a space between the flexible substrate and the cover substrate. | 03-05-2009 |
20090101899 | STACKED STRUCTURE AND METHOD OF PATTERNING THE SAME AND ORGANIC THIN FILM TRANSISTOR AND ARRAY HAVING THE SAME - A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is disposed on the surface of the soluble organic semiconductor material. | 04-23-2009 |
20090102375 | THIN FILM TRANSISTOR AND ORGANIC ELECTRO-LUMINESCENT DISPLAY DEVICE - A TFT and an OLED device are provided. The TFT includes a substrate, a gate, a gate insulator, a source/drain layer, an isolated layer, and a channel layer. The gate is disposed on the substrate. The gate insulator is disposed on the substrate and covers the gate. The source/drain layer is disposed on the gate insulator, and exposes a portion of the gate insulator above the gate. The isolated layer is disposed on the source/drain layer and has an opening to expose a portion of the gate insulator and a portion of the source/drain layer above the gate. The channel layer is disposed in the opening of the isolated layer. Further, the channel layer is exposed by the opening and is electrically connected to the source/drain layer. On the other hand, the OLED device mainly includes a driving circuit and an organic electro-luminescent unit. | 04-23-2009 |
20090258169 | METHOD FOR MANUFACTURING A PATTERNED METAL LAYER - This invention provides a method for manufacturing a patterned metal layer, which forms a metal layer on a sacrificial layer having light-thermal conversion characteristic on a first substrate. The metal layer is patterned onto a second substrate by a laser transfer printing method to form a patterned metal layer on the second substrate. The sacrificial layer between the patterned metal layer and the first substrate can absorb laser light to protect the patterned metal layer from absorbing laser light and being heated. The oxidation of the patterned metal layer is prohibited. | 10-15-2009 |
20090267075 | OGANIC THIN FILM TRANSISTOR AND PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME AND DISPLAY PANEL - A method of manufacturing an organic thin film transistor is described. A patterned insulating layer having an opening therein is formed on a substrate. A gate is formed in the opening of the insulating layer, and a gate insulating layer is formed on the gate. A conductive material layer is formed on the gate insulating layer by a printing process. One of the gate insulating layer and the conductive material layer is hydrophobic or hydrophilic and the other is hydrophilic or hydrophobic, such that the conductive material layer is naturally separated to two sides of the gate insulating layer to form a source and a drain. An active layer is formed on the gate insulating layer between the source and the drain. | 10-29-2009 |
20100200844 | ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - An organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet is provided. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof. Therefore, an organic thin film transistor having a simple fabricating process is provided. Besides, a fabricating method of an organic thin film transistor is also provided. | 08-12-2010 |
20100258346 | PACKAGE OF ENVIRONMENTALLY SENSITIVE ELECTRONIC DEVICE AND FABRICATING METHOD THEREOF - A package of an environmentally sensitive electronic device including a first substrate, a second substrate, an environmentally sensitive electronic device, a plurality of barrier structures, and a fill is provided. The second substrate is disposed above the first substrate. The environmentally sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The barrier structures are disposed between the first substrate and the second substrate, wherein the barrier structures surround the environmental sensitive electronic device, and the water vapor transmission rate of the barrier structures is less than 10 | 10-14-2010 |
20110063808 | PACKAGE OF ENVIRONMENTAL SENSITIVE ELEMENT - A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, a flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is substantially equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer. | 03-17-2011 |
20120138909 | STACKED STRUCTURE AND ORGANIC THIN FILM TRANSISTOR AND ARRAY HAVING THE SAME - A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is directly disposed on the surface of the soluble organic semiconductor material. | 06-07-2012 |
20120231578 | FABRICATING METHOD OF ORGANIC THIN FILM TRANSISTOR HAVING A HYDROPHOBIC LAYER - A fabricating method of an organic thin film transistor having a hydrophobic layer is provided. The organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof. | 09-13-2012 |
20140118947 | ENVIRONMENTAL SENSITIVE ELECTRONIC DEVICE PACKAGE - An environmental sensitive electronic device package including a first substrate, a second substrate, an environmental sensitive electronic device, at least one first side wall barrier structure, at least one thermal protrusion, and a first filler layer is provided. The second substrate is disposed above the first substrate. The environmental sensitive electronic device is disposed on the first substrate and located between the first substrate and the second substrate. The first side wall barrier structure is disposed on the second substrate and located between the first substrate and the second substrate, wherein the first side wall barrier structure is located on at least one side of the environmental sensitive electronic device. The thermal protrusion is located on the second substrate. The first filler layer is located between the first substrate and the second substrate and covers the environmental sensitive electronic device, the first side wall barrier structure, and the thermal protrusion. | 05-01-2014 |
20140175405 | ELECTRONIC DEVICE PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure of an electronic device is provided. The substrate of such package structure has at least one embedded gas barrier structure, which protects the electronic device mounted thereon and offers good gas barrier capability so as to extend the life of the electronic device. | 06-26-2014 |