Patent application number | Description | Published |
20130007530 | VERIFYING CORRECTNESS OF REGULAR EXPRESSION TRANSFORMATIONS THAT USE A POST-PROCESSOR - A method for determining correctness of a transformation between a first finite state automaton (FSA) and a second FSA, wherein the first FSA comprises a representation of a regular expression, and the second FSA comprises a transformation of the first FSA includes determining a third FSA, the third FSA comprising a cross product of the second FSA and a post-processor; determining whether the first FSA and the third FSA are equivalent; and in the event that the first FSA is determined not to be equivalent to the third FSA, determining that the transformation between the first FSA and the second FSA is not correct. | 01-03-2013 |
20130105286 | ELECTROMECHANICAL SWITCH DEVICE AND METHOD OF OPERATING THE SAME | 05-02-2013 |
20130262492 | Determination and Handling of Subexpression Overlaps in Regular Expression Decompositions - A computer-implemented method for transforming a finite state automaton (FSA) of a regular expression includes determining, by a computer, a first subexpression R | 10-03-2013 |
20130326122 | DISTRIBUTED MEMORY ACCESS IN A NETWORK - A method of distributed memory access in a network, the network including a plurality of distributed compute elements, at least one control element and a plurality of distributed memory elements, wherein a data element is striped into data segments, the data segments being imported on at least a number of the distributed memory elements by multiple paths in the network, includes receiving, by a requesting element, credentials including an access permission for accessing the number of distributed memory elements and location information from the control element, the location information indicating physical locations of the data segments on the number of distributed memory elements; and launching, by the requesting element, a plurality of data transfers of the data segments over the multiple paths in the network to and/or from the physical locations. | 12-05-2013 |
20140059843 | FOUR TERMINAL NANO-ELECTROMECHANICAL SWITCH WITH A SINGLE MECHANICAL CONTACT - A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam. | 03-06-2014 |
20140061013 | FOUR TERMINAL NANO-ELECTROMECHANICAL SWITCH WITH A SINGLE MECHANICAL CONTACT - A nano-electro-mechanical switch includes an input electrode, a body electrode, an insulating layer, an actuator electrode, an output electrode, and a cantilever beam adapted to flex in response to an actuation voltage applied between the body electrode and the actuator electrode. The cantilever beam includes the input electrode, the body electrode and the insulating layer, the latter separating the body electrode from the input electrode, the cantilever beam being configured such that, upon flexion of the cantilever beam, the input electrode comes in contact with the output electrode at a single mechanical contact point at the level of an end of the cantilever beam. | 03-06-2014 |
20140062532 | NANO-ELECTRO-MECHANICAL-SWITCH ADIABATIC DYNAMIC LOGIC CIRCUITS - A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates. | 03-06-2014 |
20140097870 | NANO-ELECTRO-MECHANICAL-SWITCH ADIABATIC DYNAMIC LOGIC CIRCUITS - A dynamic logic gate includes a nano-electro-mechanical-switch, preferably a four-terminal-nano-electro-mechanical-switch. The invention further refers to dynamic logic cascade circuits comprising such a dynamic logic gate. In particular, embodiments of the invention concern dynamic logic cascade circuits comprising single or dual rail dynamic logic gates. | 04-10-2014 |
Patent application number | Description | Published |
20120155492 | Data Path for Data Extraction From Streaming Data - A data path for streaming data includes a plurality of sequential data registers, each of the plurality of sequential data registers comprising a plurality of data fields, wherein the streaming data moves sequentially through the sequential data registers; and a multiplexing unit, the multiplexing unit configured such that the multiplexing unit has access to each of the plurality of data fields of the plurality of sequential data registers, and wherein the multiplexing unit is configured to extract data from the streaming data as the streaming data moves through the sequential data registers in response to a data request. | 06-21-2012 |
20120203718 | ALGORITHM ENGINE FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203730 | PATTERN MATCHING ENGINE FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203753 | UPLOAD MANAGER FOR USE IN A PATTERN MATCHNG ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203754 | PERFORMANCE MONITORING MECHANISM FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203755 | MULTIPLE RULE BANK ACCESS SCHEME FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203756 | LOCAL RESULTS PROCESSOR FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203761 | PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120203970 | SOFTWARE AND HARDWARE MANAGED DUAL RULE BANK CACHE FOR USE IN A PATTERN MATCHING ACCELERATOR - A pattern matching accelerator (PMA) for assisting software threads to find the presence and location of strings in an input data stream that match a given pattern. The patterns are defined using regular expressions that are compiled into a data structure comprised of rules subsequently processed by the PMA. The patterns to be searched in the input stream are defined by the user as a set of regular expressions. The patterns to be searched are grouped in pattern context sets. The sets of regular expressions which define the pattern context sets are compiled to generate a rules structure used by the PMA hardware. The rules are compiled before search run time and stored in main memory, in rule cache memory within the PMA or a combination thereof. For each input character, the PMA executes the search and returns the search results. | 08-09-2012 |
20120230081 | CELL-STATE MEASUREMENT IN RESISTIVE MEMORY - Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (S | 09-13-2012 |
20120284222 | COMPILING PATTERN CONTEXTS TO SCAN LANES UNDER INSTRUCTION EXECUTION CONSTRAINTS - A technique for determining scan lanes is provided. For a set of patterns, a number of scan lanes is estimated to be utilized on an accelerator. The number of the scan lanes estimated for the set of patterns is iteratively incremented to optimize a throughput of the accelerator. The set of patterns is distributed to the number of the scan lanes as a distribution, and each one of the scan lanes has a predetermined number of engines. A size of a memory space is evaluated that is needed for the distribution to distribute the set of patterns onto the number of scan lanes. | 11-08-2012 |
20120314481 | CELL-STATE MEASUREMENT IN RESISTIVE MEMORY - Apparatus and method for measuring the state of a resistive memory cell. A bias voltage controller applies a bias voltage to the cell and controls the level of the bias voltage. A feedback signal generator senses cell current due to the bias voltage and generates a feedback signal (S | 12-13-2012 |
20130144830 | METHOD AND DEVICE FOR DISTRIBUTING PATTERNS TO SCANNING ENGINES FOR SCANNING PATTERNS IN A PACKET STREAM - A method and a device for distributing patterns to scanning engines for scanning packets in a packet stream are provided. The method includes providing a plurality of scanning engines and patterns, calculating a respective distance metric for every pair of patterns, and providing a plurality of distribution functions. Further, the method includes calculating a respective sum of the calculated distance metrics for distributing the patterns for each of the distribution functions, and utilizing the sums for selecting a distribution function of the D distribution functions for distributing the patterns to the M scanning engines. A device for implementing the method is also provided. | 06-06-2013 |
20130262493 | Determination and Handling of Subexpression Overlaps in Regular Expression Decompositions - A computer program product comprising a computer readable storage medium containing computer code that, when executed by a computer, implements a method for transforming a finite state automaton (FSA) of a regular expression, wherein the method includes determining, by a computer, a first subexpression R | 10-03-2013 |
Patent application number | Description | Published |
20080197360 | Diode Having Reduced On-resistance and Associated Method of Manufacture - A diode structure having a reduced on-resistance in the forward-biased condition includes semiconductor layers, preferably of silicon carbide. The anode and cathode of the device are located on the same side of the bottom semiconductor layer, providing lateral conduction across the diode body. The anode is positioned on a semiconductor mesa, and the sides of the mesa are covered with a nonconductive spacer extending from the anode to the bottom layer. An ohmic contact, preferably a metal silicide, covers the surface of the bottom layer between the spacer material and the cathode. The conductive path extends from anode to cathode through the body of the mesa and across the bottom semiconductor layer, including the ohmic contact. The method of forming the diode includes reacting layers of silicon and metal on the appropriate regions of the diode to form an ohmic contact of metal silicide. | 08-21-2008 |
20090104738 | Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate. | 04-23-2009 |
20090215280 | Passivation of Wide Band-Gap Based Semiconductor Devices with Hydrogen-Free Sputtered Nitrides - A passivated semiconductor structure and associated method are disclosed. The structure includes a silicon carbide substrate or layer; an oxidation layer on the silicon carbide substrate for lowering the interface density between the silicon carbide substrate and the thermal oxidation layer; a first sputtered non-stoichiometric silicon nitride layer on the thermal oxidation layer for reducing parasitic capacitance and minimizing device trapping; a second sputtered non-stoichiometric silicon nitride layer on the first layer for positioning subsequent passivation layers further from the substrate without encapsulating the structure; a sputtered stoichiometric silicon nitride layer on the second sputtered layer for encapsulating the structure and for enhancing the hydrogen barrier properties of the passivation layers; and a chemical vapor deposited environmental barrier layer of stoichiometric silicon nitride for step coverage and crack prevention on the encapsulant layer. | 08-27-2009 |
20110108855 | METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device including a Group III-V semiconductor layer on a surface on a silicon carbide substrate, wherein the semiconductor device defines at least one via through the silicon carbide substrate and the epitaxial layer. | 05-12-2011 |
20110165771 | METHOD OF FORMING VIAS IN SILICON CARBIDE AND RESULTING DEVICES AND CIRCUITS - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The polished surface of the silicon carbide substrate is then masked to define a predetermined location for at least one via that is opposite the device metal contact and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, the via is metallized. | 07-07-2011 |
20110193135 | Methods of Forming Contact Structures Including Alternating Metal and Silicon Layers and Related Devices - A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed. | 08-11-2011 |
20110227089 | MULTILAYER DIFFUSION BARRIERS FOR WIDE BANDGAP SCHOTTKY BARRIER DEVICES - Semiconductor Schottky barrier devices include a wide bandgap semiconductor layer, a Schottky barrier metal layer on the wide bandgap semiconductor layer and forming a Schottky junction, a current spreading layer on the Schottky barrier metal layer remote from the wide bandgap semiconductor layer and two or more diffusion barrier layers between the current spreading layer and the Schottky barrier metal layer. The first diffusion barrier layer reduces mixing of the current spreading layer and the second diffusion barrier layer at temperatures of the Schottky junction above about 300° C. and the second diffusion barrier layer reduces mixing of the first diffusion barrier layer and the Schottky barrier metal layer at the temperatures of the Schottky junction above about 300° C. | 09-22-2011 |
20110266557 | Semiconductor Devices Having Improved Adhesion and Methods of Fabricating the Same - Wide bandgap semiconductor devices are fabricated by providing a wide bandgap semiconductor layer, providing a plurality of recesses in the wide bandgap semiconductor layer, and providing a metal gate contact in the plurality of recesses. A protective layer may be provided on the wide bandgap semiconductor layer, the protective layer having a first opening extending therethrough, a dielectric layer may be provided on the protective layer, the dielectric layer having a second opening extending therethrough that is narrower than the first opening, and a gate contact may be provided in the first and second openings. The metal gate contact may be provided to include a barrier metal layer in the plurality of recesses, and a current spreading layer on the barrier metal layer remote from the wide bandgap semiconductor layer. Related devices and fabrication methods are also discussed. | 11-03-2011 |
20110278590 | Semiconductor Devices Having Gates Including Oxidized Nickel and Related Methods of Fabricating the Same - Schottky barrier semiconductor devices are provided including a wide bandgap semiconductor layer and a gate on the wide bandgap semiconductor layer. The gate includes a metal layer on the wide bandgap semiconductor layer including a nickel oxide (NiO) layer. Related methods of fabricating devices are also provided herein. | 11-17-2011 |
20120115319 | CONTACT PAD - The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process. | 05-10-2012 |
20120139084 | OHMIC CONTACT STRUCTURE FOR GROUP III NITRIDE SEMICONDUCTOR DEVICE HAVING IMPROVED SURFACE MORPHOLOGY AND WELL-DEFINED EDGE FEATURES - Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers. | 06-07-2012 |
20120175682 | OHMIC CONTACT TO SEMICONDUCTOR DEVICE - Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, the ohmic contact structure has less than or equal to 5%, more preferably less than or equal to 2%, more preferably less than or equal to 1.5%, and even more preferably less than or equal to 1% degradation for 1000 hours High Temperature Soak (HTS) at 300 degrees Celsius. In another embodiment, the ohmic contact structure additionally or alternatively has less than or equal to 10% degradation, more preferably less than or equal to 7.5% degradation, more preferably less than or equal to 6% degradation, more preferably less than or equal to 5% degradation, and even more preferably less than 3% degradation for 1000 hours High Temperature operating Life (HToL) at 225 degrees Celsius and 50 milliamps (mA) per millimeter (mm). | 07-12-2012 |
20130234278 | SCHOTTKY CONTACT - The present disclosure relates to a Schottky contact for a semiconductor device. The semiconductor device has a body formed from one or more epitaxial layers, which reside over a substrate. The Schottky contact may include a Schottky layer, a first diffusion barrier layer, and a third layer. The Schottky layer is formed of a first metal and is provided over at least a portion of a first surface of the body. The first diffusion barrier layer is formed of a silicide of the first metal and is provided over the Schottky layer. The third layer is formed of a second metal and is provided over the first diffusion barrier layer. In one embodiment, the first metal is nickel, and as such, the silicide is nickel silicide. Various other layers may be provided between or above the Schottky layer, the first diffusion barrier layer, and the third layer. | 09-12-2013 |
20130256841 | VIA PLUGS - The present disclosure relates to providing via plugs in vias of a semiconductor material. The via plugs may be formed of a polymer, such as a polyimide, that can withstand subsequent soldering and operating temperatures. The via plugs effectively fill the vias to prevent the vias from being filled substantially with solder during a subsequent soldering processes. | 10-03-2013 |
20140097469 | HYDROGEN MITIGATION SCHEMES IN THE PASSIVATION OF ADVANCED DEVICES - Embodiments of a Silicon Nitride (SiN) passivation structure for a semiconductor device and methods of fabrication thereof are disclosed. In general, a semiconductor device includes a semiconductor body and a SiN passivation structure over a surface of the semiconductor body. In one embodiment, the SiN passivation structure includes one or more Hydrogen-free SiN layers on, and preferably directly on, the surface of the semiconductor body, a Hydrogen barrier layer on, and preferably directly on, a surface of the one or more Hydrogen-free SiN layers opposite the semiconductor body, and a Chemical Vapor Deposition (CVD) SiN layer on, and preferably directly on, a surface of the Hydrogen barrier layer opposite the one or more Hydrogen-free SiN layers. The Hydrogen barrier layer preferably includes one or more oxide layers of the same or different compositions. Further, in one embodiment, the Hydrogen barrier layer is formed by Atomic Layer Deposition (ALD). | 04-10-2014 |
20140103363 | USING STRESS REDUCTION BARRIER SUB-LAYERS IN A SEMICONDUCTOR DIE - A semiconductor die, which includes a substrate, a group of primary conduction sub-layers, and a group of separation sub-layers, is disclosed. The group of primary conduction sub-layers is over the substrate. Each adjacent pair of the group of primary conduction sub-layers is separated by at least one of the group of separation sub-layers. As a result, the group of separation sub-layers mitigates grain growth in the group of primary conduction sub-layers. | 04-17-2014 |
20140124792 | NI-RICH SCHOTTKY CONTACT - Embodiments of a Nickel-rich (Ni-rich) Schottky contact for a semiconductor device and a method of fabrication thereof are disclosed. Preferably, the semiconductor device is a radio frequency or power device such as, for example, a High Electron Mobility Transistor (HEMT), a Schottky diode, a Metal Semiconductor Field Effect Transistor (MESFET), or the like. In one embodiment, the semiconductor device includes a semiconductor body and a Ni-rich Schottky contact on a surface of the semiconductor body. The Ni-rich Schottky contact includes a multilayer Ni-rich contact metal stack. The semiconductor body is preferably formed in a Group III nitride material system (e.g., includes one or more Gallium Nitride (GaN) and/or Aluminum Gallium Nitride (AlGaN) layers). Because the Schottky contact is Ni-rich, leakage through the Schottky contact is substantially reduced. | 05-08-2014 |
20140175664 | DIELECTRIC SOLDER BARRIER FOR SEMICONDUCTOR DEVICES - The present disclosure relates to a dielectric solder barrier for a semiconductor die. In one embodiment, a semiconductor die includes a substrate, a semiconductor body on a first surface of the substrate, one or more first metallization layers on the semiconductor body opposite the substrate, a via that extends from a second surface of the substrate through the substrate and the semiconductor body to the one or more first metallization layers, and a second metallization layer on the second surface of the substrate and within the via. A portion of the second metallization layer within the via provides an electrical connection between the second metallization layer and the one or more first metallization layers. The semiconductor die further includes a dielectric solder barrier on the second metallization layer. Preferably, the dielectric solder barrier is on a surface of the portion of the second metallization layer within the via. | 06-26-2014 |
20140264713 | GATE CONTACT FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF - Embodiments of a gate contact for a semiconductor device and methods of fabrication thereof are disclosed. In one embodiment, a semiconductor device includes a semiconductor structure and a dielectric layer on a surface of the semiconductor structure, where the dielectric layer has an opening that exposes an area of the semiconductor structure. A gate contact for the semiconductor device is formed on the exposed area of the semiconductor structure through the opening in the dielectric layer. The gate contact includes a proximal end on a portion of the exposed area of the semiconductor structure, a distal end opposite the proximal end, and sidewalls that each extend between the proximal end and the distal end of the gate contact. For each sidewall of the gate contact, an air region separates the sidewall and the distal end of the gate contact from the dielectric layer. | 09-18-2014 |
20140264868 | WAFER-LEVEL DIE ATTACH METALLIZATION - Embodiments of a semiconductor wafer having wafer-level die attach metallization on a back-side of the semiconductor wafer, resulting semiconductor dies, and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor wafer includes a semiconductor structure and a front-side metallization that includes front-side metallization elements for a number of semiconductor die areas. The semiconductor wafer also includes vias that extend from a back-side of the semiconductor structure to the front-side metallization elements. A back-side metallization is on the back-side of the semiconductor structure and within the vias. For each via, one or more barrier layers are on a portion of the back-side metallization that is within the via and around a periphery of the via. The semiconductor wafer further includes wafer-level die attach metallization on the back-side metallization other than the portions of the back-side metallization that are within the vias and around the peripheries of the vias. | 09-18-2014 |
20140264960 | ENCAPSULATION OF ADVANCED DEVICES USING NOVEL PECVD AND ALD SCHEMES - Embodiments of a multi-layer environmental barrier for a semiconductor device and methods of manufacturing the same are disclosed. In one embodiment, a semiconductor device is formed on a semiconductor die. The semiconductor die includes a semiconductor body and a passivation structure on the semiconductor body. A multi-level environmental barrier is provided on the passivation structure. The multi-layer environmental barrier is a low-defect multi-layer dielectric film that hermetically seals the semiconductor device from the environment. In one embodiment, the multi-layer environmental barrier has a defect density of less than 10 defects per square centimeter (cm | 09-18-2014 |