Patent application number | Description | Published |
20080211948 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM USING THE SAME - A photoelectric conversion apparatus includes a pixel unit having a plurality of pixels arranged in a matrix, a plurality of block lines to which signals are supplied from the pixels, transfer switches used to supply the signals from the block lines to a common signal line, and a driving circuit configured to drive the pixels, the block lines, and the transfer switches. The block lines have resetting units used to reset potentials of the block lines. With this configuration, a signal reading operation is performed at high speed in the photoelectric conversion apparatus. | 09-04-2008 |
20080218627 | IMAGE CAPTURING SYSTEM - An image capturing system comprises an image sensor and a mechanical shutter, wherein a charge accumulation operation of the pixels of each row of the image sensor starts at a timing of ending a reset operation, and ends at a timing of causing the mechanical shutter to set a light-shielded state of the pixels of each row, the reset operation of the pixels of each row of the image sensor is performed to select rows sequentially in a first direction from an upper surface to a lower surface of a housing, the mechanical shutter ends exposure of the image sensor while causing a shutter curtain to run in the first direction, and a readout operation of the pixels of each row of the image sensor is done to select rows sequentially in a second direction reverse to the first direction. | 09-11-2008 |
20090009638 | IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period. | 01-08-2009 |
20090073291 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 03-19-2009 |
20090073298 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a pixel including, a column signal line, a readout circuit, an output line, and an output unit. The readout circuit includes a first accumulation unit, a first opening/closing unit, a second accumulation unit, a transmission unit, and a second opening/closing unit. A capacitance of the first accumulation unit is smaller than a capacitance of the second accumulation unit, and the signal held by the second accumulation unit is read out to the output unit based on the capacitance of the second accumulation unit and the capacitance of the output line. | 03-19-2009 |
20090104729 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 04-23-2009 |
20090109314 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 04-30-2009 |
20090159783 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the fist block line and the second block line. | 06-25-2009 |
20090207293 | IMAGE SENSING APPARATUS, IMAGE SENSING APPARATUS CONTROL METHOD, AND IMAGING SYSTEM - An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line. | 08-20-2009 |
20090213260 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 08-27-2009 |
20090237544 | IMAGE PICKUP APPARATUS - There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor. | 09-24-2009 |
20090295974 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF RESETTING THE SAME - A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance. | 12-03-2009 |
20100002114 | IMAGE SENSING APPARATUS AND IMAGING SYSTEM - An image sensing apparatus comprises a transfer block including a first transfer unit and a second transfer unit, wherein the first transfer unit includes a first impedance converter which transfers a first signal to the output unit, and the first transfer unit transfers, as a third signal, a difference signal between a first offset of the first impedance converter and a signal obtained by superimposing the first offset on the first signal, the second transfer unit includes a second impedance converter which transfers a second signal to the output unit, and the second transfer unit transfers, as a fourth signal, a difference signal between a second offset of the second impedance converter and a signal obtained by superimposing the second offset on the second signal, and the output unit calculates a difference between the third signal and the fourth signal, generating and outputting an image signal. | 01-07-2010 |
20100006971 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 01-14-2010 |
20100020212 | IMAGE PICKUP DEVICE - A solid-state imaging device includes a plurality of pixels, each pixel including a photoelectric conversion unit, an amplifying transistor, and a reset transistor. The photoelectric conversion unit is arranged in a well of a first conductivity type on a semiconductor substrate. A source or drain region of the amplifying transistor or the reset transistor is arranged between the photoelectric conversion unit of a first pixel and the photoelectric conversion unit of a second pixel adjacent to the first pixel. In the first pixel, a first semiconductor region of an impurity concentration higher than that of the well of the first conductivity type is arranged between the source or drain region and the photoelectric conversion unit, and a second semiconductor region of the first conductivity type is arranged under the first semiconductor region. | 01-28-2010 |
20100025570 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line. | 02-04-2010 |
20100060754 | SOLID-STATE IMAGING APPARATUS, IMAGING SYSTEM AND DRIVING METHOD FOR SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, an imaging system and a driving method for the solid-state imaging apparatus that can reduce jaggy while increasing speed of operation for reading out signals are provided. The driving method includes a first step of storing one or more signals from the plurality of pixels in each of the plurality of first holding units; a second step of adding the signals from the plurality of pixels stored in the plurality of first holding units; and a third step of outputting the signal stored in the second holding unit, such that at least a part of a period of the first step is overlapped with a period of the third step. | 03-11-2010 |
20100066881 | IMAGE SENSING DEVICE AND IMAGE SENSING SYSTEM - An image sensing device comprises a readout unit, an output amplifier, and a horizontal scanning unit, wherein the horizontal scanning unit scans a plurality of column signal holding circuits in a plurality of holding blocks in the readout unit in a direction along a row, in each holding block, a first operation in which the signal held in a first holding unit is transferred to a second holding unit via a transfer switch is performed, and subsequently, a second operation in which the signal held in the second holding unit is transferred to the output amplifier, and a third operation in which a signal output from a pixel is read out to the first holding unit are performed in parallel, and the second operation and the first operation are performed in parallel between different holding blocks in the plurality of holding blocks. | 03-18-2010 |
20100155787 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device, on a semiconductor substrate, includes a photoelectric conversion unit having a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of the first conductivity type, and a transfer MOS transistor having a gate electrode disposed on an insulation film and transferring a charge carrier from a fourth semiconductor region. In addition, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region and under the gate electrode, and is disposed apart from the insulation film under the gate electrode of the transfer MOS transistor. | 06-24-2010 |
20100194947 | SOLID-STATE IMAGING APPARATUS - Provided is a solid-state imaging apparatus that is capable of preventing a harmful influence due to noise generated in a control line. The solid-state imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit for photoelectric converting to generate a signal; control lines for supplying control signals for driving the pixels; driving buffers for driving the control lines; and switching units for switching between a first path for supplying power source voltages from power source circuits to power source terminals of the driving buffers and a second path for supplying power source voltages from capacitors to the power source terminals of the driving buffers. | 08-05-2010 |
20100221864 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 09-02-2010 |
20100225793 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region. | 09-09-2010 |
20100264298 | PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter. | 10-21-2010 |
20100289933 | IMAGE SENSING DEVICE AND IMAGING SYSTEM - An image sensing device characterized by comprising: a pixel array; a plurality of first holding capacitances; a plurality of second holding capacitances; a first reference power supply pattern; and a second reference power supply pattern, wherein at least part of the first reference power supply pattern is arranged in a first region where reference power supply electrodes of the plurality of first holding capacitances are arrayed, at least part of the second reference power supply pattern is arranged in a second region where reference power supply electrodes of the plurality of second holding capacitances are arrayed, and the first reference power supply pattern and the second reference power supply pattern are isolated in a region including the first region and the second region. | 11-18-2010 |
20110068253 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type. | 03-24-2011 |
20110069210 | IMAGE PROCESSING APPARATUS AND IMAGING SYSTEM - An image processing apparatus, for correcting a cross talk between adjacent pixels, includes: a memory unit for storing a correction parameter for reducing a cross talk signal leaked to an object pixel from an adjacent pixel, the correction parameter corresponding to a position of the object pixel; and a correcting unit for subtracting, based on the correction parameter stored in the memory unit, the cross talk signal from a pixel signal of the solid-state imaging apparatus correspondingly to a position of the pixel, wherein a number of the object pixel is at least two, and the at least two object pixels have different addresses in a horizontal direction, and different addresses in a vertical direction. | 03-24-2011 |
20110069358 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 03-24-2011 |
20110074993 | IMAGE PICKUP DEVICE, ITS CONTROL METHOD, AND CAMERA - An image pickup device, wherein a part of the carriers overflowing from the photoelectric conversion unit for a period of photoelectrically generating and accumulating the carriers may be flowed into the floating diffusion region, and a pixel signal generating unit generating a pixel signal according to the carriers stored in the photoelectric conversion unit and the carriers having overflowed into the floating diffusion region, is provided. The expansion of a dynamic range and the improvement of an image quality can be provided by controlling a ratio of the carriers flowing into the floating diffusion region to the carriers overflowing from such a photoelectric conversion unit at high accuracy. | 03-31-2011 |
20110114822 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING THE APPARATUS - A photoelectric conversion apparatus includes a first block line through which an optical signal is output and a second block line through which a noise signal superimposed on the optical signal is output. The photoelectric conversion apparatus also includes a switch used to control a connection between the first block line and the second block line. | 05-19-2011 |
20110134270 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - If separations between photoelectric conversion elements are different from each other, charge leaking into adjacent photoelectric conversion elements varies. A photoelectric conversion apparatus of the present invention includes a first semiconductor region that can be potential barriers against signal charge, between first and second photoelectric conversion elements. Further, the apparatus includes a second semiconductor region that has the same depth as the depth of the first semiconductor region and a width narrower than the width of the first semiconductor region and can be potential barriers against the signal charge, between the first and a third photoelectric conversion element. Moreover, the apparatus includes a third semiconductor region that can be potential barriers against the signal charge under the first semiconductor region and the second semiconductor region. | 06-09-2011 |
20110156196 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 06-30-2011 |
20110157440 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 06-30-2011 |
20110157441 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 06-30-2011 |
20110169989 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus capable of suppressing blooming and color mixing includes a plurality of pixels, each including a photoelectric converting portion and a transferring portion for transferring signal electrons from the photoelectric converting portion, wherein a plurality of the photoelectric converting portions is formed in a first conductivity type well region formed on the semiconductor substrate; a second conductivity type first impurity region is arranged between the adjacent photoelectric converting portions; a first conductivity type second impurity region having an impurity concentration higher than that of the well region is arranged between the first impurity region and each of the photoelectric converting portions; and a first conductivity type third impurity region having an impurity concentration higher than that of the well region and decreasing from the semiconductor substrate toward the surface direction of the apparatus between the semiconductor substrate and the first impurity region. | 07-14-2011 |
20110175150 | IMAGE PICKUP DEVICE - The present invention uses an image pickup device comprising a plurality of pixels respectively including a photoelectric conversion unit for converting incoming light into a signal charge, an amplifying unit for amplifying the signal charge generated by the photoelectric conversion unit and a transfer unit for transferring the signal charge from the photoelectric conversion unit to the amplifying unit, in which the photoelectric conversion unit is formed of a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region and a second-conductivity-type third semiconductor region is formed on at least a part of the gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel, a first-conductivity-type fourth semiconductor region having an impurity concentration higher than that of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region and a first-conductivity-type fifth semiconductor region formed at a position deeper than the fourth semiconductor region and having an impurity concentration higher than that of the first semiconductor region is included between the photoelectric conversion unit and the third semiconductor region. | 07-21-2011 |
20110194005 | SIGNAL READING APPARATUS AND IMAGE PICKUP SYSTEM USING THE SIGNAL READING APPARATUS - A signal reading apparatus includes first and second common signal lines from which a signal from a signal generation unit is output and first and second amplifier circuits and a switch configured to control a conductive state of the first and the second common signal lines. The signal reading apparatus includes a first signal reading method of reading a signal from the first common signal line after being amplified in the first amplifier circuit and reading a signal from the second common signal line after being amplified in the second amplifier circuit and a second signal reading method of turning ON the switch to read the signal from the first common signal line and the signal from the second common signal line individually after being amplified in the first amplifier circuit. The signal reading apparatus includes a control unit for controlling between the first and second signal reading methods. | 08-11-2011 |
20110198482 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICE - A photoelectric conversion device prevents a pseudo signal caused by the parasitic capacitance of a transfer switch from being input to an amplifier. A photoelectric conversion device ( | 08-18-2011 |
20110198718 | SOLID STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING SOLID STATE IMAGE PICKUP DEVICE - A method for manufacturing a solid state image pickup device including a first active region provided with a first conversion unit, a second active region provided with a second conversion unit, and a third active region adjoining the first and the second active regions with a field region therebetween and being provided with a pixel transistor, the method including the steps of ion-implanting first conductivity type impurity ions to form a semiconductor region serving as a potential barrier against the signal carriers at a predetermined depth in the third active region and ion-implanting second conductivity type impurity ions into the third active region with energy lower than the above-described ion-implantation energy. | 08-18-2011 |
20110221943 | SOLID IMAGE PICKUP DEVICE, IMAGE PICKUP SYSTEM AND METHOD OF DRIVING SOLID IMAGE PICKUP DEVICE - The solid image pickup device of the present invention comprises a photoelectric conversion part, a charge-voltage conversion part for converting electric charges from the photoelectric conversion part to voltage signals, a signal amplifier for amplifying the voltage signals generated in the charge-voltage conversion part, charge transfer means for transferring photo-electric charges from the photoelectric conversion part to the charge-voltage conversion part, and means for applying a certain voltage to a charge-voltage conversion part, wherein at least two readout operations for reading out the photo-electric charges accumulated during a period of accumulating photo-electric charges in the photoelectric conversion part via a signal amplifier. | 09-15-2011 |
20110242380 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus is provided that including a plurality of amplifiers each one amplifying a signal from each one of a plurality of pixels. The amplifier including first and second field effect transistors, gate electrodes of which are connected to the same voltage node (VBL); and a first wiring connected between the voltage node and the gate electrodes of the first and second field effect transistors. The first and second field effect transistors are arranged in a direction perpendicular to a direction in which the plurality of amplifiers is arranged. Material of the first wiring has a resistivity smaller than that of the gate electrodes of the first and second field effect transistors. | 10-06-2011 |
20120008029 | SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM - A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region. | 01-12-2012 |
20120075512 | IMAGE PICKUP APPARATUS - There is provided an image pickup apparatus comprising a plurality of pixels each including a photoelectric conversion unit which converts incident light into an electrical signal and accumulates the electrical signal, an amplifier transistor which amplifies and outputs the signal from the photoelectric conversion unit, a transfer transistor which transfers the electrical signal accumulated in the photoelectric conversion unit to the amplifier transistor, and a processing transistor which performs predetermined processing, and a control circuit which sets the signal level supplied to the control electrode of the transfer transistor in order to turn off the transfer transistor to be lower than the signal level supplied to the control electrode of the processing transistor in order to turn off the processing transistor. | 03-29-2012 |
20120086841 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING DEVICE - A photoelectric conversion device includes a pixel unit including a photoelectric converter, an amplifier arranged on the output side of the pixel unit, an output unit arranged on the output side of the amplifier, a first restriction circuit, and a second restriction circuit. The first restriction circuit restricts, between the amplifier and the output unit, a noise level read out from the pixel unit via the amplifier in reading out the noise level from the pixel unit. The second restriction circuit restricts, between the photoelectric converter and the amplifier, a noise level to be provided to the amplifier in reading out the noise level from the pixel unit. | 04-12-2012 |
20120086843 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 04-12-2012 |
20120113305 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF RESETTING THE SAME - A solid-state image pickup device comprises for each pixel a photoelectric converter PD, an input terminal FD of a signal amplifier and a transfer switch TX for transferring an optical signal from the photoelectric converter to the input terminal. The device additionally comprises means for resetting the photoelectric converter by opening the transfer switch TX under a condition of holding the voltage of the input terminal FD to a fixed high level before storing the optical signal in the photoelectric converter PD. With this arrangement, any residual electric charge in the photoelectric converter can be eliminated without paying the cost of reducing the manufacturing yield and degrading the chip performance. | 05-10-2012 |
20120119070 | IMAGE SENSING APPARATUS, IMAGE SENSING APPARATUS CONTROL METHOD, AND IMAGING SYSTEM - An image sensing apparatus comprises: an output unit which includes an output line group, a plurality of difference circuits, a first dummy line, and a second dummy line, and wherein the output line group is interposed between the first dummy line and the second dummy line, a readout unit includes a plurality of memory circuits, each of the plurality of memory circuits includes a first holding capacitance and a second holding capacitance, a gain determined by a ratio of a capacitance value of the first holding capacitance and a capacitance value of a first output line is applied to the first signal output to the first output line, and a gain determined by a ratio of a capacitance value of the second holding capacitance and a capacitance value of a second output line is applied to the second signal output to the second output line. | 05-17-2012 |
20120146100 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device is provided on a semiconductor substrate and includes a photoelectric conversion unit having a first semiconductor region, a second semiconductor region, and a third semiconductor region. A transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region, and an amplifying MOS transistor has a gate electrode connected to the fourth semiconductor region. In addition, a fifth semiconductor region is continuously disposed to the second semiconductor region, under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region. | 06-14-2012 |
20120199726 | IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period. | 08-09-2012 |
20120217603 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 08-30-2012 |
20120280295 | IMAGE PICKUP DEVICE - An image pickup device includes pixels, each including a photoelectric conversion unit and a transfer unit. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. A second-conductivity-type third semiconductor region is formed on at least a part of a gap between a photoelectric conversion unit of a first pixel and a photoelectric conversion unit of a second pixel adjacent to the first pixel. A first-conductivity-type fourth semiconductor region having an impurity concentration higher than an impurity concentration of the first semiconductor region is formed between the photoelectric conversion unit and the third semiconductor region. A first-conductivity-type fifth semiconductor region having an impurity concentration higher than the first semiconductor region is arranged between the photoelectric conversion unit and the third semiconductor region and is arranged deeper than fourth semiconductor region. | 11-08-2012 |
20120281262 | SOLID-STATE IMAGING DEVICE - To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area. | 11-08-2012 |
20120288979 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 11-15-2012 |
20120312964 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a read-out node to which an electric charge generated in a photoelectric conversion unit is transferred, an output unit configured to convert the electric charge transferred to the read-out node into a voltage and output the resultant voltage to a signal line, and a switch including a first node electrically connected to the read-out node. Each switch includes a second node different from the first node, and a particular number of second nodes are electrically connected to a common bypass wiring. | 12-13-2012 |
20120319224 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 12-20-2012 |
20130092983 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - A plurality of photoelectric conversion elements including a first photoelectric conversion element, a second photoelectric conversion element, and a third photoelectric conversion element, are arranged in a photoelectric conversion apparatus of the present invention. Provided, between the first photoelectric conversion element and the second photoelectric conversion element, is a first semiconductor region of a first conductivity type and of a first width in which a signal charge is a minor charier. And, provided, between the first photoelectric conversion element and the third photoelectric conversion element, is a second semiconductor region of the first conductivity type in a higher impurity concentration and of a second width narrower than the first width at a position deeper in a semiconductor substrate rather than a depth of the first semiconductor region. | 04-18-2013 |
20130140438 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130140665 | SOLID STATE IMAGE PICKUP DEVICE AND CAMERA - A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region. | 06-06-2013 |
20130181118 | SOLID-STATE IMAGE PICKUP DEVICE AND CONTROL METHOD THEREOF, AND CAMERA - An object of the invention is to cause a part of charge spilling from a photoelectric conversion unit to flow into a charge holding unit and thereby extend dynamic range and at the same time improve image quality. There is provided a solid-state image pickup device having a pixel including: a photoelectric conversion unit generating and accumulating charge by means of photoelectric conversion; a first charge holding unit being shielded from light, and being adaptable to accumulate a part of charge spilling from the photoelectric conversion unit in a period during which the photoelectric conversion unit generates and accumulates charge; an amplifying unit (SF-MOS) amplifying charge; a first transfer unit (Tx-MOS) transferring the charge accumulated in the photoelectric conversion unit to the amplifying unit; and a second transfer unit (Ty-MOS) transferring the charge accumulated in the first charge holding unit to the amplifying unit. | 07-18-2013 |
20130187199 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A MOS-type solid-state image pickup device includes a photoelectric conversion unit having a first semiconductor region of a first conductive type, a second semiconductor region of a second conductive type forming a pn-junction with the first semiconductor region, and a third semiconductor region of the first conductive type disposed on the second semiconductor region. In addition, a transfer gate electrode is disposed on an insulation film and transfers a carrier from the second semiconductor region to a fourth semiconductor region of the second conductivity type, an amplifying MOS transistor having a gate electrode is connected to the fourth semiconductor region, and a fifth semiconductor region of the second conductivity type is continuously disposed to the second semiconductor region, disposed under the gate electrode. An entire surface of the third semiconductor region is covered with the insulation film, and a side portion of the third semiconductor region that is laterally opposite to the transfer gate is in contact with the first semiconductor region. | 07-25-2013 |
20130194470 | SOLID-STATE IMAGING APPARATUS - Provided is a solid-state imaging apparatus that is capable of preventing a harmful influence due to noise generated in a control line. The solid-state imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit for photoelectric converting to generate a signal; control lines for supplying control signals for driving the pixels; driving buffers for driving the control lines; and switching units for switching between a first path for supplying power source voltages from power source circuits to power source terminals of the driving buffers and a second path for supplying power source voltages from capacitors to the power source terminals of the driving buffers. | 08-01-2013 |
20130201372 | PHOTO-ELECTRIC CONVERSION DEVICE AND IMAGE CAPTURING SYSTEM - A photo-electric conversion device comprises a pixel array in which a plurality of pixels are arrayed, each pixel including a photo-electric converter, a floating diffusion portion, a transfer unit which transfers charges generated in the photo-electric converter to the floating diffusion portion, and an output unit which outputs a signal corresponding to a potential of the floating diffusion portion, a signal line which is connected to the plurality of pixels and transmits a signal output from each pixel, a load transistor including a drain connected to the signal line, and a source connected to a first reference potential, and a capacitance including a first electrode connected to a gate of the load transistor, and a second electrode connected to a second reference potential, wherein the signal line is arranged not to overlap the first electrode when viewed from a direction perpendicular to a light-receiving surface of the photo-electric converter. | 08-08-2013 |
20130222659 | SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA HAVING ARRAYED PIXELS INCLUDING AMPLIFYING UNITS - An solid state image pickup device including a plurality of photoelectric conversion regions (PD | 08-29-2013 |
20130248940 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus of the present invention includes: a plurality of photoelectric conversion elements arranged on a substrate; a transistor for transferring a signal charge; and a plurality of transistors for reading out the signal charge transferred. The plurality of photoelectric conversion elements include a first photoelectric conversion element and a second photoelectric conversion element adjacent to each other. The photoelectric conversion apparatus of the present invention includes: a first semiconductor region having a first conductivity type arranged between the first photoelectric conversion element and the second photoelectric conversion element; and a second semiconductor region having the first conductivity type that is arranged on a region where the plurality of transistors are arranged and that has a width larger than that of the first semiconductor region of the first conductivity type. | 09-26-2013 |
20140001339 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME | 01-02-2014 |
20140054663 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 02-27-2014 |
20140106496 | SOLID STATE IMAGE PICKUP DEVICE AND MANUFACTURING METHOD THEREFOR - A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view. | 04-17-2014 |
20140192241 | IMAGING APPARATUS AND PROCESSING METHOD THEREOF - A solid-state imaging apparatus of a dynamic range enlarged by reading out a carrier accumulated in a carrier accumulation unit at a plurality of times during a single carrier accumulation time period. | 07-10-2014 |