Patent application number | Description | Published |
20080305614 | PRECISION TRENCH FORMATION FOR SEMICONDUCTOR DEVICE - Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen. | 12-11-2008 |
20100001336 | SONOS-NAND DEVICE HAVING A STORAGE REGION SEPARATED BETWEEN CELLS - The present invention is a semiconductor device including a semiconductor substrate having a trench, a first insulating film provided on side surfaces of the trench, a second insulating film of a material different from the first insulating film provided to be embedded in the trench, a word line provided extending to intersect with the trench above the semiconductor substrate, a gate insulating film of a material different from the first insulating film separated in an extending direction of the word line by the trench and provided under a central area in a width direction of the word line, and a charge storage layer separated in the extending direction of the word line by the trench and provided under both ends in the width direction of the word line to enclose the gate insulating film, and a method for manufacturing the same. | 01-07-2010 |
20110081767 | PRECISION TRENCH FORMATION THROUGH OXIDE REGION FORMATION FOR A SEMICONDUCTOR DEVICE - Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen. | 04-07-2011 |
Patent application number | Description | Published |
20080234337 | Preventive and/or Remedy for Hyperkalemia Containing Ep4 Agonist - The present invention relates to a preventive and/or therapeutic agent for hyperkalemia, and a potassium excretion promoter containing EP | 09-25-2008 |
20100010222 | PHARMACEUTICAL COMPOSITION FOR TREATMENT OF DISEASES ASSOCIATED WITH DECREASE IN BONE MASS COMPRISING EP4 AGONIST AS ACTIVE INGREDIENT - A pharmaceutical composition for topical administration for prevention and/or treatment of diseases associated with decrease in bone mass comprising an EP | 01-14-2010 |
20100216689 | CYTOTOXIC T CELL ACTIVATOR COMPRISING EP4 AGONIST - Disclosed is a substance which has a low molecular weight, can be applied in a simpler manner, and has an immunopotentiating activity against cancer and/or a microorganism-mediated infectious disease. | 08-26-2010 |
20110038884 | IMMUNOPOTENTIATING AGENT COMPRISING EP1 AGONIST - An EP1 agonist has an immunopotentiating effect mediated by cytotoxic T lymphocyte activation and/or natural killer cell activation, and is thus useful for the prevention and/or treatment of cancers, microbial infectious diseases and the like. | 02-17-2011 |
20110287112 | PROSTATE CANCER PROGRESSION INHIBITOR AND PROGRESSION INHIBITION METHOD - A prostate cancer progression inhibitor comprises 4-(4-cyano-2-{[2-(4-fluoro-1-naphthyl)propanoyl]amino}phenyl)butyric acid, a salt thereof, a solvate thereof, or a prodrug thereof. 4-(4-Cyano-2-{[2-(4-fluoro-1-naphthyl)propanoyl]amino}phenyl)butyric acid is useful as a prostate cancer progression inhibitor because this butyric acid has, for example, a growth inhibiting effect and a hormone responsiveness recovering effect on prostate cancer that has acquired hormone resistance. | 11-24-2011 |
Patent application number | Description | Published |
20090058588 | WIRE WOUND ELECTRONIC PART - A wire wound electronic part includes a core having a wire wound core and flanges formed on both ends thereof, a coil conductor wound around the wire wound core and terminal electrodes disposed at the bottom of the flange, in which both ends of the coil conductor are conductively connected to the terminal electrodes by a solder, wherein a pair of grooves are formed at the bottom crossing the wire wound core of one of the flanges. The groove has a bottom and side walls disposed being slanted on both sides thereof, in which the vertical height for the side wall is formed larger than the length for the bottom of the side wall. The terminal electrodes are contained in the groove, and edge portion in the lateral direction of the terminal electrode is restricted by the side wall of the groove. The edge portion in the lateral direction of the terminal electrode is restricted by the side wall of the groove, which makes the lateral size stable and suppresses the movement of the molten solder in the lateral direction of the groove, thereby preventing unstable height and attitude of the wire wound electronic part upon mounting to a circuit substrate. | 03-05-2009 |
20090058591 | WIRE WOUND ELECTRONIC PART - A wire wound electronic part includes a ferrite core comprising ferrite having a columnar wire wound core and flanges formed at both ends thereof, a coil conductor wound around the wire wound core of the ferrite core, and at least a pair of terminal electrodes having a Cu conduction layer disposed to the outer surface of the flange, in which both ends of the coil conductor wound around the wire wound core are conductively connected to the terminal electrodes. The terminal electrode is formed by coating an electrode paste containing a Cu powder and a glass frit to the outer surface of the ferrite core, and then applying a heat treatment to the ferrite core. There is a reaction layer of a portion of the ferrite core and the glass frit at a boundary between the ferrite core and the Cu conduction layer. The terminal electrodes has the peel strength identical with that of an existent Ag terminal electrode, without forming a plate layer. | 03-05-2009 |