Patent application number | Description | Published |
20090057693 | LIGHT-EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS - A light-emitting element array can be manufactured without the separation of a metal reflection layer. The light-emitting element array includes a plurality of light-emitting element portions provided on a substrate, at least one space of the spaces between adjacent light-emitting element portions being electrically separated from each other, wherein the metal reflection layer is provided on the substrate and under the plurality of light-emitting element portions, and a resistive layer for electrical separation between the light-emitting element portions is provided between the plurality of light-emitting element portions and the metal reflection layer. The plurality of light-emitting element portions are divided into a plurality of blocks. Each of the blocks includes a plurality of light-emitting portions. The electrical separation between the light-emitting portions can be made as electrical separation between adjacent light-emitting element portions in adjacent and different blocks. | 03-05-2009 |
20090061604 | GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR - Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices. | 03-05-2009 |
20090315965 | LED ARRAY MANUFACTURING METHOD, LED ARRAY AND LED PRINTER - An LED array having no insulating film between the LED structure and the reflector thereof is manufactured by forming a luminescent layer | 12-24-2009 |
20100026779 | SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD - A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer ( | 02-04-2010 |
20100097612 | DEVICE AND METHOD FOR ACQUIRING INFORMATION ON OBJECTIVE SUBSTANCE TO BE DETECTED BY DETECTING A CHANGE OF WAVELENGTH CHARACTERISTICS ON THE OPTICAL TRANSMITTANCE - An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means. | 04-22-2010 |
20100109019 | FORMING METHOD OF GALLIUM NITRIDE SYSTEM COMPOUND SEMICONDUCTOR LAYER, TRANSFER METHOD OF THE SAME, AND SUBSTRATE STRUCTURE WITH THE SAME BONDED THERETO - A method includes: forming a first layer containing silicon oxide on a first substrate; partially removing the first layer to form an exposure portion on the first substrate; depositing amorphous gallium nitride system compound semiconductor on the first substrate with the exposure portion; evaporating the semiconductor on the first layer to form cores of the semiconductor on the exposure portion of the first substrate; forming an epitaxial layer of the semiconductor on the first substrate through increase in a size of the core, combination of the cores, crystal growth, formation of facets, bending of dislocation lines, transverse crystal growth onto the first layer, collision between adjoining crystal grains, combination of the transversely grown crystals, formation of dislocation networks, and formation of a flat surface of the semiconductor; and removing the epitaxial layer of the semiconductor on the exposure portion on the first substrate to form a separating groove. | 05-06-2010 |
20100109023 | TRANSFER METHOD OF FUNCTIONAL REGION, LED ARRAY, LED PRINTER HEAD, AND LED PRINTER - A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer. | 05-06-2010 |
20100109024 | TRANSFER METHOD OF FUNCTIONAL REGION, LED ARRAY, LED PRINTER HEAD, AND LED PRINTER - A method includes arranging a bonding layer of a predetermined thickness on at least one of a first functional region bonded on a release layer, which is capable of falling into a releasable condition when subjected to a process, on a first substrate, and a region, to which the first functional region is to be transferred, on a second substrate; bonding the first functional region to the second substrate through the bonding layer; and separating the first substrate from the first functional region at the release layer. | 05-06-2010 |
20100110157 | TRANSFER METHOD OF FUNCTIONAL REGION, LED ARRAY, LED PRINTER HEAD, AND LED PRINTER - A method includes arranging a first bonding layer on a first functional region on a first substrate, or a region on a second substrate, bonding the first functional region to the second substrate through the first bonding layer, subjecting a first release layer to a first process to separate the first substrate from the first functional region at the first release layer, arranging a second bonding layer on a second functional region on the first substrate, or a region on a third substrate, bonding the second functional region to the second or third substrate through the second bonding layer, and subjecting a second release layer to a second process to separate the first substrate from the second functional region at the second release layer. | 05-06-2010 |
20100159678 | GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR - Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices. | 06-24-2010 |
20100197054 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device according to the present invention has the steps of: preparing a first member which has an emission layer on a substrate having a compound semiconductor layer through an etch stop layer and a sacrifice layer; forming a bonded structure by bonding the first member on a second member including a silicon layer so that the emission layer is positioned in the inner side; providing a through groove in the substrate so that the etch stop layer is exposed, by etching the first member from the reverse side of the emission layer; and removing the substrate having the through groove provided therein from the bonded structure by etching the sacrifice layer. | 08-05-2010 |
20120282716 | SEMICONDUCTOR MEMBER, SEMICONDUCTOR ARTICLE MANUFACTURING METHOD, AND LED ARRAY USING THE MANUFACTURING METHOD - A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer ( | 11-08-2012 |