Patent application number | Description | Published |
20090057135 | SPUTTERING METHOD AND APPARATUS - The sputtering apparatus includes a vacuum vessel, a sputter electrode placed within the vacuum vessel to hold a target material to be sputtered, a radio frequency power source for applying radio frequency waves to the electrode, a substrate holder which is spaced from the electrode and on which a substrate is held, a thin film being to be deposited on the substrate from components of the target material, and an impedance adjusting circuit for adjusting a first impedance of the substrate holder. The impedance adjusting circuit has a first end directly set at a ground potential and has an impedance circuit which is adjustable for adjusting the first impedance, a second impedance of the impedance circuit is adjusted to thereby adjust the first impedance and, hence, a potential of the substrate. | 03-05-2009 |
20090066188 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 03-12-2009 |
20090066763 | PIEZOELECTRIC DEVICE, INK-JET HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a substrate, a first electrode formed on the substrate, a piezoelectric film formed on the first electrode and a second electrode formed on a second side of the piezoelectric film which is away from a first side where the first electrode is formed. The first electrode is composed of a first layer in contact with the substrate and a second layer in contact with the piezoelectric film. The first layer is formed of a material that is wet etched at a different rate than the substrate. The in %-jet head includes the piezoelectric device, a liquid droplet storing/ejecting member for ejecting ink droplets through a ink spout and provided on the piezoelectric device and a diaphragm for vibrating in response to expansion or contraction of the piezoelectric device and provided between the piezoelectric device and the liquid droplet storing/ejecting member. | 03-12-2009 |
20100039481 | Film depositing apparatus, a film depositing method, a piezoelectric film, and a liquid ejecting apparatus - A film depositing apparatus comprises: a process chamber; a target holder provided in the process chamber for holding a target; a substrate holder for supporting a deposition substrate such that the deposition substrate faces the target holder in the process chamber; a power supply for supplying electric power between the target holder and the substrate holder to generate plasma in the process chamber; and an anode provided between the target holder and the substrate holder for capturing ions and/or electrons in the plasma being generated within the process chamber, wherein the anode includes: a cylindrical member provided so as to surround an outer periphery of a side of the substrate holder that faces the target holder; and at least one annular plate member attached to an inside wall of the cylindrical member, the plate member having a central opening larger than a surface of the deposition substrate. | 02-18-2010 |
20100039482 | MULTILAYER BODY, PIEZOELECTRIC ELEMENT, AND LIQUID EJECTING DEVICE - A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal. | 02-18-2010 |
20100066788 | PEROVSKITE-TYPE OXIDE FILM, PIEZOELECTRIC THIN-FILM DEVICE AND LIQUID EJECTING DEVICE USING PEROVSKITE-TYPE OXIDE FILM, AS WELL AS PRODUCTION PROCESS AND EVALUATION METHOD FOR PEROVSKITE-TYPE OXIDE FILM - Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm | 03-18-2010 |
20100090154 | FILM DEPOSITING APPARATUS, A FILM DEPOSITING METHOD, A PIEZOELECTRIC FILM, AND A LIQUID EJECTING APPARATUS - A film depositing apparatus comprises: a process chamber; a gas supply source for supplying the process chamber with gases necessary for film deposition; an evacuating unit for evacuating the interior of the process chamber; a target holder placed within the process chamber for holding a target; a substrate holder for holding a deposition substrate within the process chamber in a face-to-face relation with the target holder; a power supply unit for supplying electric power between the target holder and the substrate holder to generate a plasma within the process chamber; and an anode provided between the target holder and the substrate holder so as to surround the outer periphery of the side of the substrate holder that faces the target holder, the anode comprising at least one plate member for capturing ions in the plasma generated within the process chamber. | 04-15-2010 |
20100245411 | DROPLET JETTING DEVICE - A droplet jetting device that includes a recording head section, a pressure sensor and a regulation pump is provided. The recording head section includes a recording head that jets droplets from nozzles and records an image at a recording medium. The pressure sensor is provided at the recording head section and senses a pressure of liquid supplied to the recording head by a main pump from a main tank. The main tank is disposed at a position away from the recording head section. The regulation pump is provided at the recording head section that is smaller in scale than the main pump and regulates pressure of the liquid such that the pressure of the liquid sensed by the pressure sensor is constant. | 09-30-2010 |
20110014394 | FILM DEPOSITING APPARATUS AND METHOD - A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight. | 01-20-2011 |
20110041304 | PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME - The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of Pb | 02-24-2011 |
20130300254 | PIEZOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE MANUFACTURING METHOD - A piezoelectric device includes: a substrate; a lower electrode provided on a substrate; a piezoelectric film provided by being laminated on the lower electrode, the piezoelectric film being formed of lead zirconate titanate (PZT) containing 6 at % or more in atomic composition percentage of at least one type of metal element selected from V group and VI group; an oxide electrode layer provided by being laminated on the piezoelectric film; a first metal electrode layer containing an oxidation-resistant precious metal provided by being laminated on the oxide electrode layer; a second metal electrode layer provided by being laminated on the first metal electrode layer; and a wire connected to the second metal electrode layer. | 11-14-2013 |
20140083971 | ETCHING SOLUTION, METHOD FOR MANUFACTURING PIEZOELECTRIC ELEMENT AND ETCHING METHOD - The present invention provides an etching solution for etching a piezoelectric film having a thin film of a perovskite structure grown to be a columnar structure on a lower electrode formed on a substrate and having a pyrochlore layer at an interface thereof with the lower electrode, wherein the etching solution comprises at least: a hydrofluoric acid type chemical comprising at least any of buffered hydrofluoric acid (BHF), hydrogen fluoride (HF), and diluted hydrofluoric acid (DHF); and nitric acid, and has a concentration by weight of hydrochloric acid of less than 10% and a weight ratio of hydrochloric acid to nitric acid (hydrochloric acid/nitric acid) of 1/4 or less. The present invention also provides a method of manufacturing a piezoelectric element to carry out etching using the etching solution. | 03-27-2014 |