Hobgood
Adam Hobgood, Smyrna, TN US
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20110071363 | SYSTEM AND METHOD FOR USING PREDICTIVE MODELS TO DETERMINE LEVELS OF HEALTHCARE INTERVENTIONS - A computer implemented method may be used for targeting patients within a population for increased medical interventions. In one embodiment, predictive models are used to determine whether a patient is likely to be near the end of life, whether the patient's healthcare costs are stabilizing, whether the patient is likely to have high future healthcare costs, and whether the patient is likely to have high future clinical risk. In one embodiment, scores from these predictive models are used to determine the level of medical intervention for a particular patient. | 03-24-2011 |
Andrew W. Hobgood, Marlborough, MA US
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20120213294 | Media Acceleration for Virtual Computing Services - Streaming media is problematic for thin clients using remoting protocols like RDP that were never designed to handle the volume of data associated with multimedia. The result is large demands on the host computer and thin client CPU and excessive bandwidth on the network, which results in a poor display quality. A process running on a host computer detects an existing multimedia acceleration channel to a thin client and also identifies unaccelerated media streams like Adobe Flash. The unaccelerated content is automatically re-encoded using a codec format supported by the thin client acceleration channel. This results in a significant improvement in the quality of the streaming media displayed on the thin client and overall reductions in host CPU load, network bandwidth and thin client CPU load. No additional software is required on the thin clients to support new media types including Adobe Flash. | 08-23-2012 |
20120227085 | VIRTUAL COMPUTING SERVICES DEPLOYMENT NETWORK - A virtual computing services deployment network provides a consistent user experience from a variety of locations via a connection fabric for accessing a virtual desktop. The connection fabric identifies a user profile defining the virtualized desktop resources required for a particular user. The connection fabric includes distributed data and processing in nodes distributed throughout a public access network accessible from a user access device. Each of the fabric nodes is operable to provide an identifier (such as an IP address) of a computing resource adapted to provide the user specific desktop. A user access device accesses a local fabric node in the connection fabric, and the fabric node determines a computing resource matching a user profile of expected computing resources. The fabric node associates the user access device with the computing resource and sends the user access device an identifier for directly accessing the computing resource. The determined computing resource may be determined by a centralized virtual computing approach, thus providing appropriate scaling without significantly impacting the existing fabric. | 09-06-2012 |
20130174242 | Remote Access Manager for Virtual Computing Services - A remote access manager in a virtual computing services environment negotiates a time limited NAT routing rule to establish a connection between a remote device and virtual desktop resource providing user computing services. A series of NAT connection rules are revised in a dynamic manner such that a pool of ports is available to connect a plurality of remote users to local virtual compute resources over one or more public IP addresses. Once a connection is established, an entry is made in a firewall state table such that the firewall state table allows uninterrupted use of the established connection. After an entry has been made in the state table, or the routing rule has timed out, the port associated with the original NAT routing rule is removed and the same port can be re-used to establish another connection without disrupting active connections. | 07-04-2013 |
20140280979 | VIRTUAL COMPUTING SERVICES DEPLOYMENT NETWORK - A virtual computing services deployment network provides a consistent user experience from a variety of locations via a connection fabric for accessing a virtual desktop. The connection fabric identifies a user profile defining the virtualized desktop resources required for a particular user. The connection fabric includes distributed data and processing in nodes distributed throughout a public access network accessible from a user access device. Each of the fabric nodes is operable to provide an identifier (such as an IP address) of a computing resource adapted to provide the user specific desktop. A user access device accesses a local fabric node in the connection fabric, and the fabric node determines a computing resource matching a user profile of expected computing resources. The fabric node associates the user access device with the computing resource and sends the user access device an identifier for directly accessing the computing resource. The determined computing resource may be determined by a centralized virtual computing approach, thus providing appropriate scaling without significantly impacting the existing fabric. | 09-18-2014 |
Benjamin Hobgood, Oxford, NC US
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20110072764 | METHOD AND APPARATUS FOR SEALING CONTAINERS - A sealing system configured to receive a container and seal the container with a lidding. The system comprises an in-feeder that is configured to receive a plurality of containers and transport a batch of containers that are selected from the plurality of containers; and a modular seal assembly that is configured to seal the batch of containers with a lidding, wherein the modular seal assembly comprises: a docking station that is configured to hold a plurality of sealing modules; and a sealing module that is configured to be removable from the docking station without removing any other one of the plurality of sealing modules. | 03-31-2011 |
Bryan Chad Hobgood, Glen Allen, VA US
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20140279592 | SYSTEM AND METHOD FOR SOCIAL HOME BUYING - Example embodiments disclose systems and methods for providing a property profile for a property. The disclosed systems and methods enable receiving, via a network at a social home buying system, identifying data from a mobile device, receiving location data, via a network at a social home buying system, from the mobile device, retrieving property data from a property information database that stores information about the property based on the at least one of the identifying data and location data, creating a property profile based on the property data, identifying data, and location data, storing the property profile in a property profile database, and providing the property profile via a network to a social networking site. | 09-18-2014 |
Hudson M. Hobgood, Pittsboro, NC US
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20090056619 | Halogen Assisted Physical Vapor Transport Method for Silicon Carbide Growth - A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal. | 03-05-2009 |
20100320477 | PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES - A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration. | 12-23-2010 |
20110266556 | METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME - A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die. | 11-03-2011 |
20120167825 | HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBIDE GROWTH - A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal. | 07-05-2012 |
20130153928 | METHOD FOR CONTROLLED GROWTH OF SILICON CARBIDE AND STRUCTURES PRODUCED BY SAME - A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die. | 06-20-2013 |
Hudson Mcdonald Hobgood, Venice, FL US
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20130181231 | MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE - Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material. | 07-18-2013 |
Hudson Mcdonald Hobgood, Pittsboro, NC US
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20090256162 | Method for Producing Semi-Insulating Resistivity in High Purity Silicon Carbide Crystals - A method is disclosed for producing high quality semi-insulating silicon carbide crystals in the absence of relevant amounts of deep level trapping elements. The invention includes the steps of heating a silicon carbide crystal having a first concentration of point defects to a temperature that thermodynamically increases the number of point defects and resulting states in the crystal, and then cooling the heated crystal at a sufficiently rapid rate to maintain an increased concentration of point defects in the cooled crystal. | 10-15-2009 |
20110024766 | ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER - A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder. | 02-03-2011 |
John Paul Hobgood, Houma, LA US
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20090065189 | Tong Positioning and Alignment Device - An improved tong positioning apparatus which includes a base positionable on the rig floor; a hydraulic cylinder positioned on the base, having a first end engageable to a rear support member and a second end engageable to a pivotal moment arm; a forward shock attachment arm engaged at a first end to one of three attachment points on the moment arm, and a second end which attaches to a tong frame attachment point on the tong. The forward shock attachment arm includes a pair of shock absorbers engaged along its length to provide a smooth, non-jerking motion both vertically and horizontally in moving the power tong. The tong positioning apparatus is designed to be remotely operated by hydraulic, air, air over hydraulics, electronically, by a single operator. There is further provided a plurality of attachment points on the rear support member, and a plurality of pivot points for the moment arm, to allow for various vertical and horizontal positioning of the tong during makeup and breakup of pipe on the rig floor. Further, the apparatus includes a safety shield system to insure the workers are protected from inadvertent contact with moving parts of the apparatus. Further, the apparatus includes a pipe section guide, digital or VHS video taping capability and positioning and alignment system to further align the upper tong and lower tong in relation to the pipe sections when mating with the jaw—die of the upper tong and the jaw—die combination of the lower tong. Further to the safety of the deck members, the tong operator controls the operation of the forward door of the upper tong during the torque process. A motor drive arrangement enables the apparatus to be rotated relative to the rig floor. | 03-12-2009 |