Patent application number | Description | Published |
20080211567 | BIDIRECTIONAL SWITCH AND METHOD FOR DRIVING THE SAME - A bidirectional switch includes a field-effect transistor having a first ohmic electrode, a second ohmic electrode and a gate electrode, and a control circuit for controlling between a conduction state and a cut-off state by applying a bias voltage to the gate electrode. The control circuit applies the bias voltage from the first ohmic electrode as a reference when a potential of the second ohmic electrode is higher than the potential of the first ohmic electrode, and applies the bias voltage from the second ohmic electrode as a reference when the potential of the second electrode is lower than the potential of the first ohmic electrode. | 09-04-2008 |
20080303162 | SEMICONDUCTOR DEVICE - A semiconductor device includes a layered structure including a first nitride semiconductor layer and a second nitride semiconductor layer that are sequentially formed over a substrate in this order. The second nitride semiconductor layer has a wider bandgap than the first nitride semiconductor layer. A first electrode and a second electrode are formed spaced apart from each other on the layered structure. A first insulating layer with a high breakdown field is formed in a region with electric field concentration between the first electrode and the second electrode over the layered structure. The first insulating layer has a higher breakdown field than air. | 12-11-2008 |
20090078943 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device mainly made of a nitride semiconductor material having excellent heat dissipation characteristics and great crystallinity and a method for manufacturing thereof are provided. The method for manufacturing the nitride semiconductor includes vapor-depositing a diamond layer on a silicon substrate, bonding an SOI substrate on a surface of the diamond layer, thinning the SOI substrate, epitaxially growing an GaN layer on the thinned SOI substrate, removing the silicon substrate, and bonding, on a rear-surface of the diamond layer, a material having a thermal conductivity greater than a thermal conductivity of the silicon substrate. The SOI substrate has an outermost surface layer and a silicon oxide layer. In the thinning, the SOI substrate is thinned by selectively removed through the silicon oxide layer, so that only the outermost surface layer is left. | 03-26-2009 |
20090114948 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that has a sufficiently low on-resistance and excellent low-capacitance and high-speed characteristics as compared with conventional GaN-based diodes. The semiconductor device includes: a substrate ( | 05-07-2009 |
20100090250 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride. | 04-15-2010 |
20100097105 | SEMICONDUCTOR DEVICE AND METHOD FOR DRIVING THE SAME - A semiconductor device includes a semiconductor layer stack | 04-22-2010 |
20100321363 | PLASMA DISPLAY PANEL DRIVING DEVICE AND PLASMA DISPLAY - A plasma display panel driving device includes an electrode driving unit for generating a drive pulse to be applied to an electrode of a plasma display panel. The electrode driving unit has a plurality of switches. At least one of the plurality of switches is a switch device including a dual-gate semiconductor device. The dual-gate semiconductor device | 12-23-2010 |
20110095335 | NITRIDE SEMICONDUCTOR DEVICE - A high breakdown voltage GaN-based transistor is provided on a silicon substrate. A nitride semiconductor device including: a silicon substrate, a SiO | 04-28-2011 |
20110227093 | FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - The present invention has an object to provide an FET and a method of manufacturing the FET that are capable of increasing the threshold voltage as well as decreasing the on-resistance. The FET of the present invention includes a first undoped GaN layer; a first undoped AlGaN layer formed on the first undoped GaN layer, having a band gap energy greater than that of the first undoped GaN layer; a second undoped GaN layer formed on the first undoped AlGaN layer; a second undoped AlGaN layer formed on the second undoped GaN layer, having a band gap energy greater than that of the second undoped GaN layer; a p-type GaN layer formed in the recess of the second undoped AlGaN layer; a gate electrode formed on the p-type GaN layer; and a source electrode and a drain electrode which are formed in both lateral regions of the gate electrode, wherein a channel is formed at the heterojunction interface between the first undoped GaN layer and the first undoped AlGaN layer. | 09-22-2011 |
20110227132 | FIELD-EFFECT TRANSISTOR - The present invention has as an object to provide a FET having low on-resistance. The FET according to the present invention includes: first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a higher band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer; a fourth nitride semiconductor layer formed on the third nitride semiconductor layer and having a higher band gap energy than the third nitride semiconductor layer. A channel is formed in a heterojunction interface between the first nitride semiconductor layer and the second nitride semiconductor layer. | 09-22-2011 |
20120146093 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semiconductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer | 06-14-2012 |
20120247555 | SOLAR CELL - The purpose of the present invention is to provide a solar cell with higher conversion efficiency. | 10-04-2012 |
20120301993 | SOLAR CELL - A method for generating electric power including the steps of: (a) preparing a solar cell having a condensing lens and a solar cell element, wherein the solar cell element includes an n-type GaAs layer, a p-type GaAs layer, a quantum tunneling layer, an n-type InGaP layer, a p-type InGaP layer, a p-type window layer, an n-side electrode, and a p-side electrode, and satisfies the following equation (I): d | 11-29-2012 |
20130119486 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a nitride semiconductor multilayer including an active region, and first and second electrodes, each having a finger-like structure and formed on the active region to be spaced from each other. A first electrode interconnect is formed on the first electrode. A second electrode interconnect is formed on the second electrode. A second insulating film is formed to cover the first and second electrode interconnects. A first metal layer is formed on the second insulating film. The first metal layer is formed above the active region with the second insulating film interposed therebetween, and is coupled to the first electrode interconnect. | 05-16-2013 |
20140096818 | SOLAR CELL - A solar cell has a condenser lens and a solar cell element, the solar cell element including an n-type InGaAs layer, an n-type GaAs layer, an n-type InGaP layer, the first InGaAs peripheral part having a thickness (d2), and a width (w2), the second InGaAs peripheral part having a thickness (d3), and a width (w3), the first GaAs peripheral part having a thickness (d5), and a width (w4), the second GaAs peripheral part a thickness (d6), and a width (w5), the first InGaP peripheral part having a thickness (d8), and a width (w6), the second InGaP peripheral part having a thickness (d9), and a width (w7), the following inequation set being satisfied: 1 nm≦(d2, d3, d5, and d6)≦4 nm, 1 nm≦(d8 and d9)≦5 nm, 100 nm≦(w2, w3, w4, w5, w6, and w7), the InGaAs center part having a thickness (w1), a window layer has a range S irradiated by sunlight having a width (w8); w8≦w1. | 04-10-2014 |
20140231873 | NITRIDE SEMICONDUCTOR DEVICE - A nitride semiconductor device includes a semiconductor multilayer formed on a substrate, a first ohmic electrode and a Schottky electrode spaced apart from each other on the semicnductor multilayer; and a passivation film covering a top of the semiconductor multilayer. The semiconductor multilayer | 08-21-2014 |