Patent application number | Description | Published |
20120123917 | SYSTEM AND METHOD FOR VARIABLE TIME-BASED LICENSING - A system and method for variable time-based licensing is provided, which includes a chips cache which stores activated chips and a chips pool which stores inactive chips. In this context “chips” can be considered a currency which can be traded to use software tools for a period of time associated with each chip. The system further includes a chips accounting manager, operable to receive license requests for software tools and to determine whether to grant the license request; and a license manager which tracks active chips and manages activated chip check-in and checkout. When the chips accounting manager receives a license request for a software tool the chips accounting manager determines whether the chips cache includes sufficient chips to access the software tool. If there are insufficient chips, the chips accounting manager checks whether inactive chips in the chip pool can be activated and added to the chips cache. If there are sufficient chips, the chips accounting manager notifies the license manager to check out the sufficient chips from the chips cache and grant access to the software tool. | 05-17-2012 |
20130159128 | SYSTEM AND METHOD FOR PROVIDING SECURITY IN VARIABLE TIME-BASED LICENSING SYSTEMS - A system and method for a software licensing system for use in e.g., a variable time-based licensing, is provided. Such a system includes a secure device, including a first computer readable medium, configured to connect to a computer, including a second computer readable medium and microprocessor. The secure device can further include a chips pool which stores inactive chips, and a chips accounting manager, operable to receive license requests for software tools and to determine whether to grant the license request. In this context “chips” can be considered a currency which can be traded to use software tools for a period of time associated with each chip. The system further includes a license server, executing on the computer. The license server can include a license manager which tracks active chips and manages activated chip check-in and checkout, and a chips cache which stores activated chips. | 06-20-2013 |
Patent application number | Description | Published |
20160005865 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP | 01-07-2016 |
20160043717 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device has, as a current monitor circuit, a circuit in which n-channel type MISFETs are connected in series with each other. Based on a delay time of a speed monitor circuit in a state where a substrate bias is being applied to the p-channel type MISFETs, a first voltage value of a first substrate bias to be applied to the p-channel type MISFETs is determined. Next, based on a current flowing through an n-channel type MISFET in a state where the first substrate bias is being applied to the p-channel type MISFETs of the current monitor circuit and a second substrate bias is being applied to the n-channel type MISFETs of the current monitor circuit, a second voltage value of the second substrate bias to be applied to the n-channel type MISFETs is determined. | 02-11-2016 |
20160056264 | Semiconductor Device and Manufacturing Method of the Same - Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode. | 02-25-2016 |
20160064416 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the device plane of a semiconductor substrate. In the device, the height of a gate electrode of an SOI type MISFET is higher than that of a gate electrode of a bulk type MISFET with respect to the device plane. | 03-03-2016 |
Patent application number | Description | Published |
20120061761 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICES - Logic transistors (MOSFETs, MISFETs) in core portions of integrated circuits can be microminiaturized by scaling operating voltage as their generation advances. However, since transistors (MOSFETs, MISFETs) in high-breakdown voltage portions operate on relatively high power supply voltage, it is difficult to reduce their size. Similarly, electrostatic discharge (ESD) protection circuits in power supply cells protect the elements in a semiconductor integrated circuit against static electricity (foreign surge); therefore, they are indispensably required to be high in breakdown voltage and call for a large area for dissipating electric charges. To microminiaturize integrated circuits, therefore, a transistor structure that enables microminiaturization is indispensable. To solve the above problem, a semiconductor integrated circuit device having in its ESD protection circuit portion a CMIS inverter made up of a pair of MISFETs having a source/drain asymmetric structure and including a halo region only on the source side is provided. | 03-15-2012 |
20130020644 | SEMICONDUCTOR DEVICE - A semiconductor device with an SRAM memory cell having improved characteristics. Below an active region in which a driver transistor including a SRAM is placed, an n type back gate region surrounded by an element isolation region is provided via an insulating layer. It is coupled to the gate electrode of the driver transistor. A p well region is provided below the n type back gate region and at least partially extends to a position deeper than the element isolation region. It is fixed at a grounding potential. Such a configuration makes it possible to control the threshold potential of the transistor to be high when the transistor is ON and to be low when the transistor is OFF; and control so as not to apply a forward bias to the PN junction between the p well region and the n type back gate region. | 01-24-2013 |
20130087855 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the device plane of a semiconductor substrate. In the device, the height of a gate electrode of an SOI type MISFET is higher than that of a gate electrode of a bulk type MISFET with respect to the device plane. | 04-11-2013 |
20130119470 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Characteristics of a semiconductor device are improved. A semiconductor device of the present invention includes: (a) a MISFET arranged in an active region formed of a semiconductor region surrounded by an element isolation region; and (b) an insulating layer arranged below the active region. Further, the semiconductor device includes: (c) a p-type semiconductor region arranged below the active region so as to interpose the insulating layer; and (d) an n-type semiconductor region whose conductivity type is opposite to the p-type, arranged below the p-type semiconductor region. And, the p-type semiconductor region includes a connection region extending from below the insulating layer, and the p-type semiconductor region and a gate electrode of the MISFET are connected to each other by a shared plug which is an integrally-formed conductive film extending from above the gate electrode to above the connection region. | 05-16-2013 |
20130140669 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A first MISFET which is a semiconductor element is formed on an SOI substrate. The SOI substrate includes a supporting substrate which is a base, BOX layer which is an insulating layer formed on a main surface (surface) of the supporting substrate, that is, a buried oxide film; and an SOI layer which is a semiconductor layer formed on the BOX layer. The first MISFET as a semiconductor element is formed to the SOI layer. In an isolation region, an isolation groove is formed penetrating though the SOI layer and the BOX layer so that a bottom surface of the groove is positioned in the middle of a thickness of the supporting substrate. An isolation film is buried in the isolation groove being formed. Then, an oxidation resistant film is interposed between the BOX layer and the isolation film. | 06-06-2013 |
20130187230 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. | 07-25-2013 |
20140042529 | SEMICONDUCTOR DEVICE AND MANUFACTRUING METHOD OF THE SAME - A semiconductor device is manufactured by using an SOI substrate having an insulating layer on a substrate and a semiconductor layer on the insulating layer. The semiconductor device is provided with a gate electrode formed on the semiconductor layer via a gate insulating film, a sidewall spacer formed on a sidewall of the gate electrode, a semiconductor layer for source/drain that is epitaxially grown on the semiconductor layer, and a sidewall spacer formed on a sidewall of the semiconductor layer. | 02-13-2014 |
20140375379 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - A semiconductor integrated circuit device has, as a current monitor circuit, a circuit in which n-channel type MISFETs are connected in series with each other. Based on a delay time of a speed monitor circuit in a state where a substrate bias is being applied to the p-channel type MISFETs, a first voltage value of a first substrate bias to be applied to the p-channel type MISFETs is determined. Next, based on a current flowing through an n-channel type MISFET in a state where the first substrate bias is being applied to the p-channel type MISFETs of the current monitor circuit and a second substrate bias is being applied to the n-channel type MISFETs of the current monitor circuit, a second voltage value of the second substrate bias to be applied to the n-channel type MISFETs is determined. | 12-25-2014 |
20150084064 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP | 03-26-2015 |
20150221560 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Characteristics of a semiconductor device are improved. A semiconductor device of the present invention includes: (a) a MISFET arranged in an active region formed of a semiconductor region surrounded by an element isolation region; and (b) an insulating layer arranged below the active region. Further, the semiconductor device includes: (c) a p-type semiconductor region arranged below the active region so as to interpose the insulating layer; and (d) an n-type semiconductor region whose conductivity type is opposite to the p-type, arranged below the p-type semiconductor region. And, the p-type semiconductor region includes a connection region extending from below the insulating layer, and the p-type semiconductor region and a gate electrode of the MISFET are connected to each other by a shared plug which is an integrally-formed conductive film extending from above the gate electrode to above the connection region. | 08-06-2015 |
20150325673 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device is manufactured by using an SOI substrate having an insulating layer on a substrate and a semiconductor layer on the insulating layer. The semiconductor device is provided with a gate electrode formed on the semiconductor layer via a gate insulating film, a sidewall spacer formed on a sidewall of the gate electrode, a semiconductor layer for source/drain that is epitaxially grown on the semiconductor layer, and a sidewall spacer formed on a sidewall of the semiconductor layer. | 11-12-2015 |
Patent application number | Description | Published |
20110238395 | METHOD FOR GENERATING MODEL FOR PREOPERATIVE SIMULATION - The invention is directed to the provision of a method for generating a model for a preoperative simulation, wherein the method includes: a first step of constructing volume data for necessary organs by acquiring geometrical information from a medical image; a second step of manipulating the volume data to reposition and reorient an operator-designated organ to achieve a position and orientation appropriate for a surgical operation; a third step of generating a blood-vessel model, depicting a blood vessel to be joined to the designated organ, so as to match the position and orientation of the designated organ; a fourth step of generating volume data by forming a fat model of prescribed thickness around a prescribed organ contained in the earlier constructed volume data, after the blood-vessel model has been joined to the designated organ; a fifth step of thereafter meshing the organ represented by the generated volume data; a sixth step of manipulating a template model of a prescribed shape by using a template, and arranging the template model around the generated blood-vessel model; and a seventh step of generating a line-segment model based on the thus arranged template model. | 09-29-2011 |
20120081367 | SURGICAL SIMULATION MODEL GENERATING METHOD, SURGICAL SIMULATION METHOD, AND SURGICAL SIMULATOR - A surgical simulation model generating method includes: a first process in which a computing unit acquires geometrical information of an organ from a medical image stored in a storage unit, including an image of the organ, and generates volume data for the organ; a second process in which, after the first process, the computing unit forms nodal points by meshing the organ represented by the generated volume data; a third process in which the computing unit generates a simulated membrane that covers the organ represented by the volume data meshed in the second process; and a fourth process in which the computing unit generates a simulated organ by drawing an imaginary line so as to extend from each nodal point formed on a surface of the organ represented by the volume data meshed in the second process in a direction that intersects the simulated membrane and thereby forming a membrane nodal point at a point where the imaginary line intersects the simulated membrane generated in the third process, and by arranging on each imaginary line an imaginary inter-membrane spring that connects between the nodal point formed on the surface of the organ and the membrane nodal point, while also arranging an in-plane spring that connects between adjacent membrane nodal points on the simulated membrane. | 04-05-2012 |
Patent application number | Description | Published |
20090053948 | BASE FOR SYNTHETIC LEATHER AND SYNTHETIC LEATHERS MADE BY USING THE SAME - A substrate for artificial leathers, comprising a nonwoven fabric body made of microfine fiber bundles and an elastic polymer impregnated therein. The substrate for artificial leathers simultaneously satisfies the following requirements 1 to 4: (1) each of the microfine fiber bundles contains 6 to 150 bundled microfine long fibers in average; (2) a cross-sectional area of the microfine long fibers constituting the microfine fiber bundles is 27 μm | 02-26-2009 |
20090124156 | BASE MATERIAL FOR ARTIFICIAL LEATHER AND GRAINED ARTIFICIAL LEATHER - A substrate for artificial leathers composed of an entangled nonwoven fabric made of microfine fibers and a binder resin. At least one surface of the substrate for artificial leathers is a densified layer which is made of the microfine fibers and which is substantially free from the binder resin. The binder resin is impregnated into a portion of the substrate for artificial leathers other than the densified layer. The densified layer prevents the binder resin impregnated into the entangled nonwoven fabric from migrating into the surface of the entangled nonwoven fabric, thereby providing the substrate for artificial leathers having the surface substantially free from the binder resin. The peeling strength between the substrate for artificial leathers and a grain layer formed on the surface thereof is drastically improved because the surface of the substrate for artificial leathers is substantially free from the binder resin. | 05-14-2009 |
20100086738 | LEATHER-LIKE SHEET BEARING GRAIN FINISH AND PROCESS FOR PRODUCING THE SAME - A (semi)grain-finished leather-like sheet composed of an entangled nonwoven fabric of three-dimensionally entangled fiber bundles containing microfine long fibers and an elastic polymer contained in the entangled nonwoven fabric. When dividing the (semi)grain-finished leather-like sheet to five layers with equal thickness, i.e., surface layer, substrate layer | 04-08-2010 |
20100159772 | GRAIN LEATHER-LIKE SHEET HAVING EXCELLENT SCRATCH RESISTANCE AND ABRASION RESISTANCE - A grain-finished leather-like sheet having a fibrous substrate layer, a polyurethane non-porous layer and a polyurethane surface layer which are successively laminated in this order. The polyurethane surface layer contains a binder polyurethane and polyurethane fine particles having a particle size of 1 to 50 μm. The total thickness of the polyurethane non-porous layer and the polyurethane surface layer is 150 μm or more. The polyurethane surface layer contains the polyurethane fine particles in an amount of 10 to 40 parts by mass per 100 parts by mass of the binder polyurethane. The polyurethane fine particles are not exposed to the surface. The grain-finished leather-like sheet characterized by the above features has a smooth and luster surface, a good hand, and excellent scratch resistance, abrasion resistance and buckling wrinkle resistance. The sheet hardly damages or soils an object which is in contact with its surface by friction. | 06-24-2010 |
20100239817 | LEATHER-LIKE SHEET AND PROCESS FOR PRODUCING THE SAME - A leather-like sheet comprising a microfine long-fiber nonwoven fabric comprising an entangled web structure made of bundles of microfine long fibers and an elastic polymer impregnated in the microfine long-fiber nonwoven fabric. The leather-like sheet has the following features: (1) each of the bundles of microfine long fibers comprises 5 to 70 microfine long fibers having an average single fiber fineness of 0.5 dtex or less; (2) the bundles of microfine long fibers have an average fineness of 3 dtex or less; (3) the entangle web structure comprises superposed webs each comprising the bundles of microfine long fibers; (4) a ratio of the microfine long fibers and the elastic polymer is 70/30 to 40/60 by mass; (5) the elastic polymer is substantially continuous; and (6) a machine direction/transverse direction ratio of breaking strength is 1/1 to 1.3/1, an elongation at break in each of the machine direction and the transverse direction is 80% or more, and a machine direction/transverse direction ratio of elongation at break is 1/1 to 1/1.5. With these features, the leather-like sheet has a natural dense feeling resembling natural leathers, a soft hand a small difference of mechanical properties in the machine direction and the transverse direction, a moderate resistance to elongation and a durable recovery. | 09-23-2010 |
20100247843 | FLAME-RETARDANT LEATHER-LIKE SHEET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to a flame-retardant leather-like sheet having a soft hand, excellent surface touch and excellent appearance, which includes an entangled nonwoven fabric of microfine polyester fibers having an average single-fiber fineness of 0.5 dtex or less, and an elastic polymer contained inside the nonwoven fabric, wherein a flame-retardant is exhausted into the elastic polymer and wherein a flame retarder solution containing bubbles forcibly formed is applied to a back surface of the leather-like sheet so that the flame retarder is present in a region extending from the back surface to an inside of the leather-like sheet but is not present on side of a front surface of the leather-like sheet. | 09-30-2010 |
20110039055 | BASE MATERIAL FOR ARTIFICIAL LEATHER AND PROCESS FOR PRODUCING THE SAME - A substrate for artificial leather comprising a nonwoven fabric of bundles of microfine filaments. The substrate for artificial leather simultaneously satisfies the following requirements 1 to 4: (1) the bundle of microfine filaments comprises 8 to 70 microfine filaments having a cross-sectional shape of nearly circle; (2) the bundle of microfine filaments has a cross-sectional area of 170 to 700 μm | 02-17-2011 |
20130055535 | BASE MATERIAL FOR ARTIFICIAL LEATHER AND GRAINED ARTIFICIAL LEATHER - A method of producing a substrate suitable for artificial leathers. The substrate is composed of an entangled nonwoven fabric made of microfine fibers and a binder resin. At least one surface of the substrate is a densified layer which is made of the microfine fibers and which is substantially free from the binder resin. The binder resin is impregnated into a portion of the substrate other than the densified layer. The densified layer prevents the binder resin impregnated into the entangled nonwoven fabric from migrating into the surface of the entangled nonwoven fabric, thereby providing the substrate having the surface substantially free from the binder resin. The peeling strength between the substrate and a grain layer formed on the surface thereof is drastically improved because the surface of the substrate is substantially free from the binder resin. | 03-07-2013 |
Patent application number | Description | Published |
20080262309 | ENDOSCOPE AND ROTARY SELF-PROPELLED ENDOSCOPE - An endoscope of the present invention includes an insertion portion including a bending portion, an operation portion separate from the insertion portion, a bending operation wire that is inserted through the insertion portion and used for bending the bending portion in a predetermined direction with tugging in a forward/backward tugging direction, and connecting mechanisms that makes it possible to couple the insertion portion and the operation portion in a manner in which the bending wire is freely tugged in the operation portion. | 10-23-2008 |
20100022832 | ENDOSCOPE INSERTION AID AND ENDOSCOPE APPARATUS - An endoscope insertion aid includes: a tubular member which allows an insertion portion of an endoscope to be passed through in a manner being capable of moving forward and backward. A holding unit, which is provided on an outer peripheral side of the tubular member, can be inflated and deflated. A thread-like member, which is connected at one end to the tubular member and passed at the other end into a channel, extends from an opening of the channel. A thread-like member fixing unit which restrains the thread-like member and thereby restricts movement of the tubular member. A restraining member which supplies and discharges the fluid into/from the holding unit, being disposed to the insertion portion, being connected at one end to the tubular member, extends at the other end to the proximal end side of the insertion portion. A restraining member fixing unit which holds the tubular member. | 01-28-2010 |
20100048996 | Medical Instrument Insertion Guide System - A medical instrument insertion guide system according to the present invention includes: a medical instrument including an insertion portion to be inserted into a body cavity; a double flexible bag member that is an annular member made of flexible material and supplied with a gas and then sealed, and includes an inner surface and an outer surface to be continuously moved in a longitudinal axis direction; and a pressing member that intermittently presses the inner surface near a rear end surface in the axial direction of the double flexible bag member, and turns outward and advances a distal end surface of the double flexible bag member, wherein the pressing member introduces the insertion portion of the medical instrument into the body cavity using the longitudinal axis direction of the double flexible bag member as a guide. | 02-25-2010 |
20130314517 | IMAGE PICKUP UNIT AND ENDOSCOPE - The present invention provides an image pickup unit including an objective lens including a plurality of optical system members via which an object image is formed, the image pickup unit including: a fixed barrel that holds a fixed lens in the objective lens; a moving lens holding barrel that holds a moving lens and is disposed so as to be slidable along an optical axis inside the fixed barrel; and a voice coil motor section that generates a drive force for moving the moving lens holding barrel relative to the fixed barrel along the optical axis, and the voice coil motor section is disposed so that a center axis of action of a generated thrust force passes through a gravity center of a driven member to be driven by the voice coil motor section. | 11-28-2013 |