Patent application number | Description | Published |
20090171675 | DECODING REPRODUCTION APPARATUS AND METHOD AND RECEIVER - A decoding reproduction apparatus has an input memory buffer to which audio data asynchronously transmitted is input, a decoding circuit which is configured to read out and decode encoded data stored in the input memory buffer, an output memory buffer which is configured to store an output from the decoding circuit, and an output control circuit which is configured to monitor an amount of use of the input memory buffer, to output the data stored in the output memory buffer by decimation the data when the amount of use becomes larger than a predetermined upper-limit threshold value, and to output the data stored in the output memory buffer by interpolating the data when the amount of use becomes smaller than a predetermined lower-limit threshold value. Occurrence of an overflow or an underflow in the buffer as a result of D/A conversion of the audio data synchronously transmitted is prevented. | 07-02-2009 |
20130265473 | IMAGING APPARATUS, FOCUS CONTROL METHOD, AND PROGRAM - An imaging apparatus which includes a range-finding region arrangement unit which arranges range-finding regions of which region sizes are different by hierarchizing thereof, a range-finding region selection unit which selects the range-finding region in a predetermined order from the arranged range-finding regions, and a control unit which performs a focusing operation by generating an evaluation value which denotes degree of focusing with respect to the range-finding regions which are selected in the range-finding region selection unit, and controlling a position of a focus lens based on the evaluation value. | 10-10-2013 |
20150181106 | IMAGING APPARATUS AND FOCUS CONTROL METHOD - There is provided an imaging apparatus including a first focus detection unit that has a plurality of first focus detection areas in a photographed screen, and detects a first defocusing amount in the first focus detection areas, a second focus detection unit that has a plurality of second focus detection areas in a photographed screen, and detects a second defocusing amount in the second focus detection areas, a defocusing amount selection unit that selects which of the first defocusing amount detected by the first focus detection unit and the second defocusing amount detected by the second focus detection unit is used, and a focus control unit that performs focus control by moving a focus lens on the basis of the defocusing amount selected by the defocusing amount selection unit. | 06-25-2015 |
20150222806 | IMAGING CONTROL DEVICE, IMAGING APPARATUS, AND CONTROL METHOD PERFORMED BY IMAGING CONTROL DEVICE - The present technology is provided to allow a user to easily recognize a subject to be given priority. | 08-06-2015 |
20150229830 | INFORMATION PROCESSING SYSTEM, METHOD, AND NON-TRANSITORY COMPUTER-READABLE MEDIUM - There is provided an information processing system comprising: circuitry configured to acquire information indicating whether at least one of plurality of areas included in a captured image captured by a capturing device are focusable; and to issue a signal to control a display to display first information indicating whether each of the plurality of areas are focusable. | 08-13-2015 |
Patent application number | Description | Published |
20090256933 | Imaging apparatus, control method thereof, and program - An imaging apparatus includes: a layout assistant image storage unit to store multiple layout assistant images representing position and size where an object is to be disposed within an imaging range; an imaging unit to perform imaging of a subject to generate an imaged image; an object detecting unit to detect the object from the imaged image, and the position and size of the object therein; and a display control unit to display one of multiple stored layout assistant images overlaid on the imaged image. If a position difference between the position of an object determined by the displayed layout assistant image, and a size difference between the size of an object determined by the displayed layout assistant image and the size of the detected object within the imaged image, are both within predetermined ranges, a layout assistant image other than that displayed is displayed overlaid on the imaged image. | 10-15-2009 |
20110167046 | INFORMATION PROCESSING APPARATUS, METHOD, AND PROGRAM - An information processing apparatus includes a discrimination unit that discriminates types of recording media recording contents, a search unit that searches for a predetermined folder determined by a standard of recording of the contents recorded on the recording media, a determination unit that determines whether a recording position of the predetermined folder searched for by the search unit meets a standard of the recording media, and a restoration unit that restores the predetermined folder when the determination unit determines that the recording position of the predetermined folder does not meet the standard of the recording media. | 07-07-2011 |
20110170841 | Information processing device, information processing method and program - An information processing device, which includes: a data holding section which holds first time-series data of an operation parameter which varies through a predetermined capturing operation; a data comparing section which compares second time-series data of the operation parameter with the first time-series data, the second time-series data being correlated with a moving image recorded through an actual capturing operation and varying through the actual capturing operation; and a data area specifying section which specifies, among the second time-series data, a data area corresponding to the first time-series data on the basis of the comparison of the first and second time-series data. | 07-14-2011 |
Patent application number | Description | Published |
20110059597 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device capable of realizing a high yield of a large-scale semiconductor device even when a silicon carbide semiconductor including a defect is used is provided. The method of manufacturing a semiconductor device includes: a step of epitaxially growing a silicon carbide semiconductor layer on a silicon carbide semiconductor substrate; a step of polishing a surface of the silicon carbide semiconductor layer; a step of ion-implanting impurities into the silicon carbide semiconductor layer after the step of polishing; a step of performing heat treatment to activate the impurities; a step of forming a first thermal oxide film on the surface of the silicon carbide semiconductor layer after the step of performing heat treatment; a step of chemically removing the first thermal oxide film; and a step of forming an electrode layer on the silicon carbide semiconductor film. | 03-10-2011 |
20110175106 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes: a wide bandgap semiconductor substrate of a first conductivity type; a wide bandgap semiconductor layer of the first conductivity type which is formed on an upper surface of the wide bandgap semiconductor substrate and has an impurity concentration of 1E+14 atoms/cm | 07-21-2011 |
20120037922 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon carbide region formed at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region formed at a surface of the first silicon carbide region; a second-conductive-type third silicon carbide region formed below the second silicon carbide region; a trench piercing through the second silicon carbide region to reach the third silicon carbide region; a gate insulating film; a gate electrode; an interlayer insulating film with which the gate electrode is covered; a first electrode that is formed on the second silicon carbide region and the interlayer insulating film in a side surface of the trench while containing a metallic element selected from a group consisting of Ni, Ti, Ta, Mo, and W; a second electrode that is formed on the third silicon carbide region in a bottom portion of the trench and the first electrode while containing Al; a first main electrode formed on the second electrode; and a second main electrode formed on a second principal surface of the silicon carbide substrate. | 02-16-2012 |
20120056195 | SEMICONDUCTOR DEVICE - One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface. | 03-08-2012 |
20120056196 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 03-08-2012 |
20120056197 | SEMICONDUCTOR RECTIFYING DEVICE - A wide bandgap semiconductor rectifying device of an embodiment includes a first-conductive-type wide bandgap semiconductor substrate and a first-conductive-type semiconductor layer that has an impurity concentration lower than that of the substrate. The device also includes a first-conductive-type first semiconductor region, and a second-conductive-type second semiconductor region that is formed between the first regions. The device also includes second-conductive-type third semiconductor regions in which at least part of the third regions are connected to the second wide bandgap semiconductor region, the third regions being formed between the first regions, the third regions having a width narrower than that of the second region. The device also includes a first electrode and a second electrode. In the device, a direction in which a longitudinal direction of the third regions are projected onto a (0001) plane of the layer has an angle of 90±30 degrees with respect to a <11-20> direction of the layer. A gap between the third regions is not lower than 2 | 03-08-2012 |
20120223332 | SEMICONDUCTOR RECTIFYING DEVICE - A semiconductor rectifying device of an embodiment includes a first-conductive-type semiconductor substrate made of a wide bandgap semiconductor, a first-conductive-type semiconductor layer formed on an upper surface of the semiconductor substrate and made of the wide bandgap semiconductor having an impurity concentration lower than that of the semiconductor substrate, a first-conductive-type first semiconductor region formed at a surface of the semiconductor layer and made of the wide bandgap semiconductor, a second-conductive-type second semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor, a second-conductive-type third semiconductor region formed around the first semiconductor region and made of the wide bandgap semiconductor having a junction depth deeper than a junction depth of the second semiconductor region, a first electrode that is formed on the first, second, and third semiconductor regions, and a second electrode formed on a lower surface of the semiconductor substrate. | 09-06-2012 |
20120223333 | SEMICONDUCTOR RECTIFIER DEVICE - A semiconductor rectifier device according to an embodiment includes a semiconductor substrate of a first conductive type of a wide gap semiconductor, a semiconductor layer of the first conductive type of the wide gap semiconductor formed on an upper surface of the semiconductor substrate, wherein an impurity concentration of the semiconductor layer is between 1E+14 atoms/cm | 09-06-2012 |
20120228631 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate. | 09-13-2012 |
20120228635 | SEMICONDUCTOR RECTIFIER DEVICE - A semiconductor rectifier device using an SiC semiconductor at least includes: an anode electrode; an anode area that adjoins the anode electrode and is made of a second conductivity type semiconductor; a drift layer that adjoins the anode area and is made of a first conductivity type semiconductor having a low concentration; a minority carrier absorption layer that adjoins the drift layer and is made of a first conductivity type semiconductor having a higher concentration than that of the drift layer; a high-resistance semiconductor area that adjoins the minority carrier absorption layer, has less thickness than the drift layer and is made of a first conductivity type semiconductor having a concentration lower than that of the minority carrier absorption layer; a cathode contact layer that adjoins the semiconductor area; and a cathode electrode. | 09-13-2012 |
20120228734 | HIGH BREAKDOWN VOLTAGE SEMICONDUCTOR RECTIFIER - A high breakdown voltage diode of the present embodiment includes a first conductive semiconductor substrate, a drift layer formed on the first conductive semiconductor substrate and formed of a first conductive semiconductor, a buffer layer formed on the drift layer and formed of a second conductive semiconductor, a second conductive high concentration semiconductor region formed at an upper portion of the buffer layer, a mesa termination unit formed on an end region of a semiconductor apparatus to relax an electric field of the end region when reverse bias is applied between the semiconductor substrate and the buffer layer, and an electric field relaxation region formed at the mesa termination unit and formed of a second conductive semiconductor. | 09-13-2012 |
20130313573 | SEMICONDUCTOR RECTIFIER - A semiconductor rectifier includes a first conductivity type wide bandgap semiconductor substrate having a first conductivity type wide bandgap semiconductor layer on an upper surface of which is formed a plurality of first wide bandgap semiconductor regions of the first conductivity type sandwiching a plurality of second wide bandgap semiconductor regions of a second conductivity type, and a plurality of third wide bandgap semiconductor regions of the second conductivity type, at least a part of the third wide bandgap semiconductor regions being connected to the second wide bandgap semiconductor regions and each of the third wide bandgap semiconductor regions having a width smaller than that of the second wide bandgap semiconductor regions. A first electrode is formed on the first and second wide bandgap semiconductor regions and a second electrode is formed on a lower surface of the wide bandgap semiconductor substrate. | 11-28-2013 |
20140335682 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device according to an embodiment includes a first-conductive-type semiconductor substrate; a first-conductive-type first semiconductor layer formed on the semiconductor substrate, and having an impurity concentration lower than that of the semiconductor substrate; a second-conductive-type second semiconductor layer epitaxially formed on the first semiconductor layer; and a second-conductive-type third semiconductor layer epitaxially formed on the second semiconductor layer, and having an impurity concentration higher than that of the second semiconductor layer. The semiconductor device also includes a recess formed in the third semiconductor layer, and at least a corner portion of a side face and a bottom surface is located in the second semiconductor layer. The semiconductor device also includes a first electrode in contact with the third semiconductor layer; a second electrode connected to the first electrode while being in contact with the second semiconductor layer at the bottom surface of the recess; and a third electrode in contact with a lower surface of the semiconductor substrate. | 11-13-2014 |
20150137145 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The invention provides an ultra-low-on-resistance, excellent-reliability semiconductor device that can finely be processed using SiC and a semiconductor device producing method. A semiconductor device includes: a silicon carbide substrate; a first-conductive-type first silicon carbide layer provided on a first principal surface of the silicon carbide substrate; a second-conductive-type first silicon carbide region formed at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region formed at a surface of the first silicon carbide region; a second-conductive-type third silicon carbide region formed below the second silicon carbide region; a trench piercing through the second silicon carbide region to reach the third silicon carbide region; a gate insulating film; a gate electrode; an interlayer insulating film with which the gate electrode is covered; a first electrode that is formed on the second silicon carbide region and the interlayer insulating film in a side surface of the trench while containing a metallic element selected from a group consisting of Ni, Ti, Ta, Mo, and W; a second electrode that is formed on the third silicon carbide region in a bottom portion of the trench and the first electrode while containing Al; a first main electrode formed on the second electrode; and a second main electrode formed on a second principal surface of the silicon carbide substrate. | 05-21-2015 |
Patent application number | Description | Published |
20090267076 | EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Plurality of pixels ( | 10-29-2009 |
20110227088 | EL Display Device and Method for Manufacturing the Same - Plurality of pixels ( | 09-22-2011 |
20120061718 | Electronic Device - There is provided an electronic device having high reliability and high color reproducibility. A pixel structure is made such that a switching FET ( | 03-15-2012 |
20120161160 | Self Light-Emitting Device - To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer ( | 06-28-2012 |
20120286283 | EL Display device and Method for Manufacturing the Same - Plurality of pixels ( | 11-15-2012 |
20130119364 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A light-emitting device includes a transistor over a substrate and an insulating film over the transistor. The light-emitting device further includes a wiring over the insulating film and a light-emitting element. The insulating film includes a first opening and a second opening, and the wiring is electrically connected to the transistor through the first opening. The light-emitting element is provided in the second opening, and includes a first electrode, a second electrode, and an organic compound layer provided between the first electrode and the second electrode. | 05-16-2013 |
20140252361 | EL Display Device and Method for Manufacturing the Same - A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color. | 09-11-2014 |
20150162567 | Self Light-Emitting Device - To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer ( | 06-11-2015 |
Patent application number | Description | Published |
20150049202 | IMAGING UNIT AND INSTALLATION DEVICE - An imaging unit includes an imaging device that transmits an image data to an external display device; and an installation portion that is attachable to and detachable from the display device. The imaging device includes a communication part that transmits an image data to the display device, an outer barrel, and an imaging element. The installation portion includes a slider that is slidable with respect to the outer barrel, a first attached body that is connected to the slider, a second attached body that can change its gap with the first attached body, and a biasing member that biases the first attached body and the second attached body in a direction in which a gap therebetween becomes narrowed, in which the display device is grasped by the first attached body and the second attached body. | 02-19-2015 |
20150049203 | IMAGING DEVICE - An imaging device includes a communication part that transmits an image data to an external display device, an outer barrel, an imaging element, and first and second coupling parts that are configured to be coupled to an installation device which is attachable to and detachable from the display device. The first and second coupling parts are disposed at a rear surface part of the outer barrel, and a storage part that stores a battery is provided between the first coupling part and the second coupling part in the rear surface part of the outer barrel. | 02-19-2015 |
20150049204 | IMAGING DEVICE - An imaging device includes a communication part that transmits an image data to an external display device, an outer barrel in which at least one lens is disposed, an imaging element, an image taking button, a power button, and a zoom switch, in which a circumferential surface part is provided at the outer barrel, in which the image taking button is disposed on a left side of the circumferential surface part, in which the power button is disposed at an upper side of the circumferential surface part, and in which the zoom switch is disposed at the circumferential surface part. | 02-19-2015 |
20150049205 | IMAGING UNIT AND INSTALLATION DEVICE - An imaging unit includes an imaging device that transmits an image data to an external display device; and an installation portion that is attachable to and detachable from the display device. The imaging device includes a communication part that transmits an image data to the display device, an outer barrel, and an imaging element. The installation portion includes a slider that is slidable with respect to the outer barrel, a first attached body that is connected to the slider, a second attached body that can change its gap with the first attached body, and a biasing member that biases the first attached body and the second attached body in a direction in which a gap therebetween becomes narrowed, in which the display device is grasped by the first attached body and the second attached body. | 02-19-2015 |
Patent application number | Description | Published |
20090053456 | OPTICAL RECORDING MEDIUM - Provided is an optical recording medium that comprises two layers of a first information recording layer and a second information recording layer; the first information recording layer and the second information recording layer are laminated through an intermediate layer; wherein the two layers are recorded and regenerated by action of laser light irradiated from the side of the first information recording layer, the second information recording layer comprises a light reflective layer, a dye recording layer, and an inorganic protective layer on a substrate, and the substrate comprises wobble convex portions on its surface, the inorganic protective layer has a thickness of 3 nm to 40 nm, the dye recording layer comprises a cyanine compound expressed by General Formula (I) and a squarylium compound expressed by General Formula (II): | 02-26-2009 |
20100118680 | OPTICAL RECORDING MATERIAL, OPTICAL RECORDING MEDIUM, AND RECORDING AND REPRODUCING METHOD OF OPTICAL RECORDING MEDIUM - The present invention provides an optical recording material allows for obtaining excellent recording signal properties even at high-speed recording and is excellent in durability in both a single-sided single layer optical recording medium and a single-sided two-layer optical recording medium having a first recording layer and a second recording layer. The optical recording material contains a cyanine compound having a specific structure and a squarylium compound as dyes for optical recording layers. | 05-13-2010 |
20100221482 | OPTICAL RECORDING MEDIUM AND METHOD FOR MANUFACTURING THE SAME - To provide an optical recording medium including: a substrate having at least one of grooves and pits on a surface thereof; and a dye recording layer formed over the substrate, wherein the dye recording layer comprises a cyanine dye represented by the following General Formula (I), a squaric acid complex represented by the following General Formula (II), and an amine compound. | 09-02-2010 |
20120206545 | INKJET HEAD AND IMAGE FORMING DEVICE - Disclosed is an inkjet head that includes individual liquid chambers having liquid droplet discharging holes; an oscillation plate; piezoelectric elements formed by laminating a lower electrode, a piezoelectric material, and upper electrodes on the oscillation plate, wherein the lower electrode is a common electrode and the upper electrode is an individual electrode; a common electrode wiring connected to the lower electrode; | 08-16-2012 |
20120212545 | INK-JET HEAD AND INK-JET RECORDING APPARATUS - An ink-jet head includes a nozzle plate having nozzles, a vibrating plate on the nozzle plate, liquid chambers formed of spaces partitioned by division walls, a piezoelectric element having a common electrode, a piezoelectric body and an individual electrode layered in this order on a surface of the vibrating plate, a first insulator film having a first opening and a second insulator film having a second opening layered in this order on the first surface, a first wire drawn from the individual electrode via the first opening and the second opening, a third insulator film having a third opening on the first wire; and a second wire drawn via the third opening, where the third insulator film is formed in a first region of the second insulator film and is not formed in a second region excluding a region including the first wire formed above the liquid chamber. | 08-23-2012 |
20120229573 | INKJET HEAD AND INKJET PLOTTER - A disclosed inkjet head includes a liquid chamber formed by a space between a vibrating plate and a nozzle substrate and separated by partitions; a piezoelectric element formed by sequentially laminating a common electrode, a piezoelectric substance and an individual electrode over the space; first to fourth insulating films respectively having first to fourth openings; and a first wiring connected to the individual electrode and pulled through the first and second openings over the common electrode, wherein the first wiring passes through the third opening over the third insulating film, the first wiring is exposed from the fourth opening so as to be externally connected, and the third insulating film and the fourth insulating film are not partly formed above the liquid chamber and formed above the first wiring. | 09-13-2012 |
20120236083 | INKJET HEAD, INKJET RECORDING APPARATUS, LIQUID DROPLET EJECTING APPARATUS, AND IMAGE FORMING APPARATUS - An inkjet head is disclosed. In the inkjet head a vibrating plate is formed on a liquid chamber substrate on which multiple dedicated liquid chambers are aligned; a first insulating film and a second insulating film are formed between a dedicated electrode wiring and a lower electrode in an area in which the dedicated electrode wiring and the lower electrode overlap; a third insulating film and a fourth insulating film are stacked in an area which includes a forming area of the dedicated electrode wiring; in at least a portion of a forming area of the dedicated liquid chamber, there is provided a non-film forming area; and, in an area including a piezoelectric element forming section, either the first insulating film and the fourth insulating film are formed in the non-film forming area, or the fourth insulating film is formed in the non-film forming area. | 09-20-2012 |
20130002767 | ELECTROMECHANICAL TRANSDUCER ELEMENT, DROPLET DISCHARGE HEAD, AND DROPLET DISCHARGE DEVICE - Disclosed is an electromechanical transducer element that includes an electromechanical transducer film formed of a complex oxide (PZT) including lead (Pb), zirconium (Zr), and titanium (Ti). The electromechanical transducer film is formed by laminating plural PZT thin films until a thickness of the formed electromechanical transducer film becomes a predetermined thickness. When an atomic weight ratio (Pb/(Zr+Ti)) of average Pb included in the formed electromechanical transducer film is denoted by Pb(avg) and an atomic weight ratio (Pb/(Zr+Ti)) of Pb in any one of laminate interfaces of the plural PZT thin films is denoted by Pb(interface), the Pb(avg) is greater than or equal to 100 atomic percentage (at %) and less than or equal to 110 atomic percentage (at %), and a fluctuation ratio ΔPb=Pb(avg)−Pb(interface) of Pb in the laminate interface is less than or equal to 20 percent. | 01-03-2013 |
20130070029 | ELECTROMECHANICAL CONVERSION ELEMENT, LIQUID DROP EJECTION HEAD, LIQUID DROP EJECTION DEVICE, AND IMAGE FORMING APPARATUS - Disclosed is an electromechanical conversion element, including an electromechanical conversion film including a PIT, an upper electrode formed on a top of the electromechanical conversion film and including a first strontium ruthenium oxide, and a lower electrode formed on a bottom of the electromechanical conversion film and including a second strontium ruthenium oxide, wherein Sr-pzt/Sr-sr≦0.01, wherein Sr-pzt is a SIMS intensity for a secondary ion of strontium of the PZT at a position of ½ of a thickness of the electromechanical conversion film and Sr-sr is a SIMS intensity for a secondary ion of strontium of the second strontium ruthenium oxide at a position of ½ of a thickness of the lower electrode. | 03-21-2013 |
20130162726 | ELECTROMECHANICAL TRANSDUCING DEVICE AND MANUFACTURING METHOD THEREOF, AND LIQUID DROPLET DISCHARGING HEAD AND LIQUID DROPLET DISCHARGING APPARATUS - A manufacturing method of an electromechanical transducing device includes forming a vibration plate on a substrate; forming a first electrode made of a metal on the vibration plate; forming a second electrode made of an electrically conductive oxide on the first electrode; coating a surface modification material and carrying out surface modification of only the first electrode; forming an electromechanical transducing film on the second electrode; and forming a third electrode made of an electrically conductive oxide on the electromechanical transducing film. | 06-27-2013 |
20130250009 | ELECTROMECHANICAL CONVERSION ELEMENT, MANUFACTURING METHOD THEREOF, PIEZOELECTRIC TYPE ACTUATOR, LIQUID DROPLET JETTING HEAD, AND INKJET RECORDING APPARATUS - An electromechanical conversion element for converting an electric signal into mechanical displacement or converting mechanical displacement into an electric signal, includes a bottom electrode in which an alumina film, a metal film, and a conductive oxide film are sequentially laminated; an electromechanical conversion film disposed on the conductive oxide film of the bottom electrode; and a top electrode disposed on the electromechanical conversion film, wherein the metal film is solid. | 09-26-2013 |
20150077475 | ELECTROMECHANICAL TRANSDUCER ELEMENT, METHOD OF MANUFACTURING THE SAME, LIQUID DROPLET DISCHARGE HEAD, AND LIQUID DROPLET DISCHARGE DEVICE - An electromechanical transducer element includes a substrate; a first electrode formed on the substrate as a common electrode; an electromechanical transducer membrane formed on the first electrode; a second electrode formed on the electromechanical transducer membrane as an individual electrode; a first insulation protection membrane formed on the first and the second electrode; a third electrode electrically connected to the first electrode; a fourth electrode electrically connected to the second electrode; a second insulation protection membrane including a common electrode pad formed on the third electrode and plural individual electrode pads formed on the fourth electrode; and a fifth electrode formed so as to surround a vicinity of at least one of the individual electrode pads disposed at end parts. | 03-19-2015 |