Patent application number | Description | Published |
20150018363 | BENZIMIDAZOLE DERIVATIVES AS MCH RECEPTOR ANTAGONISTS - The present invention provides an aromatic ring compound having a melanin-concentrating hormone receptor antagonistic action and useful as an agent for the prophylaxis or treatment of obesity and the like. The present invention relates to a compound represented by the formula | 01-15-2015 |
20150018373 | HETEROCYCLIC COMPOUND - Provided is a compound having a melanin-concentrating hormone receptor antagonistic action and is useful as an agent for the prophylaxis or treatment of obesity and the like. A compound represented by the formula (I): | 01-15-2015 |
20150225354 | HETEROCYCLIC COMPOUND - A fused heterocyclic compound having an enteropeptidase inhibitory action and use of the compound as a medicament for treatment or prophylaxis of obesity, diabetes mellitus, etc., are provided. | 08-13-2015 |
20150225361 | FUSED HETEROCYCLIC COMPOUND - A fused heterocyclic compound having an enteropeptidase inhibitory action and use of the compound as a medicament for treatment or prophylaxis of obesity, diabetes mellitus, etc., are provided. | 08-13-2015 |
Patent application number | Description | Published |
20090162750 | METHOD OF PRODUCING LITHIUM ION-STORING/RELEASING MATERIAL, LITHIUM ION-STORING/RELEASING MATERIAL, AND ELECTRODE STRUCTURE AND ENERGY STORAGE DEVICE USING THE MATERIAL - A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other. | 06-25-2009 |
20100147796 | METAL STRUCTURAL BODY-CONTAINING POLYMER FILM, METHOD FOR MANUFACTURING METAL STRUCTURAL BODY-CONTAINING POLYMER FILM, AND METHOD FOR MANUFACTURING PATTERNED STRUCTURAL BODY - A method for manufacturing a patterned structural body by which a patterned structural body having a micropattern can be manufactured, a metal structural body-containing polymer film that can be used in the manufacture of the patterned structural body, and a method for manufacturing the polymer film are provided. The metal structural body-containing polymer film comprises a polymer film that includes a block copolymer having an ion-conductive segment and a non-ion-conductive segment and has a microphase-separated structure including ion-conductive domains and non-ion-conductive domains, and a metal structural body localized at the ion-conductive domains. | 06-17-2010 |
20110070522 | ION-CONDUCTIVE POLYMERIC COMPOSITE MEMBRANE, MEMBRANE-ELECTRODE ASSEMBLY, FUEL CELL, AND PROCESS FOR PRODUCING ION-CONDUCTIVE POLYMERIC COMPOSITE MEMBRANE - An ion-conductive polymer composite membrane is provided which has both high gas barrier properties and high protonic conductivity. The ion-conductive polymer composite membrane includes an ion-conductive polymer and ion-conductive materials. The ion-conductive materials each include i) an inorganic layered structure including a plurality of layers formed of an inorganic compound and ii) a sulfobetaine-type or hydroxysulfobetaine-type ampholytic surfactant. The ampholytic surfactant is present between the layers formed of an inorganic compound. The present invention further provides a membrane-electrode assembly and a fuel cell which use the ion-conductive polymer composite membrane, and a process for producing the ion-conductive polymer composite membrane. | 03-24-2011 |
20110274878 | PRECURSOR SOL OF ALUMINUM OXIDE, OPTICAL MEMBER, AND METHOD FOR PRODUCING OPTICAL MEMBER - A precursor sol of aluminum oxide contains a polycondensate formed by the hydrolysis of an aluminum alkoxide or an aluminum salt, a solvent, and an organic aluminum compound having a specific structure. An optical member is produced by a process including a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. A method for producing an optical member includes a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. | 11-10-2011 |
20120212827 | OPTICAL MEMBER AND METHOD FOR MAKING THE SAME - An optical member includes a glass substrate and an antireflection film disposed on a surface of the glass substrate. The antireflection film includes an oxide layer mainly composed of aluminum oxide and having a textured shape in a surface and
| 08-23-2012 |
20120321949 | METHOD OF PRODUCING LITHIUM ION-STORING/RELEASING MATERIAL, LITHIUM ION-STORING/RELEASING MATERIAL, AND ELECTRODE STRUCTURE AND ENERGY STORAGE DEVICE USING THE MATERIAL - A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other. | 12-20-2012 |
20140044921 | PRECURSOR SOL OF ALUMINUM OXIDE, OPTICAL MEMBER, AND METHOD FOR PRODUCING OPTICAL MEMBER - A precursor sol of aluminum oxide contains a polycondensate formed by the hydrolysis of an aluminum alkoxide or an aluminum salt, a solvent, and an organic aluminum compound having a specific structure. An optical member is produced by a process including a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. A method for producing an optical member includes a step of immersing an aluminum oxide film in a hot water with a temperature of 60° C. to 100° C. to form a textured structure made of aluminum oxide crystals, the aluminum oxide film being formed by feeding the precursor sol of aluminum oxide onto a base. | 02-13-2014 |
20140217063 | METAL STRUCTURAL BODY-CONTAINING POLYMER FILM, METHOD FOR MANUFACTURING METAL STRUCTURAL BODY-CONTAINING POLYMER FILM, AND METHOD FOR MANUFACTURING PATTERNED STRUCTURAL BODY - A method for manufacturing a patterned structural body by which a patterned structural body having a micropattern can be manufactured, a metal structural body-containing polymer film that can be used in the manufacture of the patterned structural body, and a method for manufacturing the polymer film are provided. The metal structural body-containing polymer film comprises a polymer film that includes a block copolymer having an ion-conductive segment and a non-ion-conductive segment and has a microphase-separated structure including ion-conductive domains and non-ion-conductive domains, and a metal structural body localized at the ion-conductive domains. | 08-07-2014 |
Patent application number | Description | Published |
20120237186 | MOVING IMAGE GENERATING METHOD, MOVING IMAGE GENERATING APPARATUS, AND STORAGE MEDIUM - A moving image generating method, a moving image generating apparatus and a storage medium for generating a moving image from a still image. According to one application, a moving image generating method uses a moving image generating apparatus which stores in advance a plurality of pieces of movement information showing movements of a plurality of movable points. The method includes, an obtaining step which obtains a still image; a setting step which sets a plurality of movement control points in the still image; a frame image generating step which moves the plurality of control points based on movements of movement information and deforms the still image to generate a plurality of frame images; and a moving image generating step which generates a moving image from a plurality of frames. | 09-20-2012 |
20150205365 | APPARATUS, SYSTEM, METHOD FOR DESIGNATING DISPLAYED ITEMS AND FOR CONTROLLING OPERATION BY DETECTING MOVEMENT - An electronic apparatus is provided. The apparatus has a displaying unit for displaying plural items, the items prepared for giving instructions of performing different operations respectively, a detecting unit for detecting movement, and a controlling unit for, when an item is designated from among the plural items, performing an operation corresponding to the designated item. Further, on the assumption that any of the plural items is designated on the displaying unit and the detecting unit detects movement, the controlling unit changes an indication of the designated item or an indication relating to designated item, displayed on the displaying unit, and on the assumption that other item is designated on the displaying unit and the detecting unit detects movement, changes an indication of the designated other item or an indication relating to designated other item, displayed on the displaying unit. | 07-23-2015 |
Patent application number | Description | Published |
20090104351 | FILM FORMING APPARATUS AND METHOD, GAS SUPPLY DEVICE AND STORAGE MEDIUM - A film forming apparatus is provided with a chamber which defines a processing space for performing a film forming process to a substrate a stage arranged in the chamber for mounting the substrate thereon; a substrate heating unit arranged on the stage for heating the substrate; a shower head which is arranged to face the stage and has many gas injecting holes; a gas supply unit for supplying cooling unit arranged above the shower head for cooling the shower head; and a shower head heating unit arranged above the cooling unit for heating the shower head through the cooling unit. | 04-23-2009 |
20090178614 | FILM-FORMING APPARATUS - A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead. | 07-16-2009 |
20100107977 | FILM FORMING APPARATUS - A film-forming apparatus of the invention is a film-forming apparatus that includes: a processing container that defines a chamber, a pedestal arranged in the chamber, on which a substrate to be processed can be placed, a showerhead provided opposite to the pedestal, which has a large number of gas-discharging holes, a gas-supplying mechanism that supplies a process gas into the chamber through the showerhead, and a showerhead-temperature controlling unit that controls a temperature of the showerhead. | 05-06-2010 |
20110061432 | SURFACE TREATMENT METHOD, SHOWER HEAD, PROCESSING CONTAINER, AND PROCESSING APPARATUS USING THEM - The method of the present invention includes: a first blasting step of carrying out blasting of the surface of a metal base material, such as a shower head or a processing container, by using a blasting material composed of a non-sublimable material (e.g. alumina); and a second blasting step of carrying out blasting of the surface of the metal base material, which has undergone the first blasting step, by using a blasting material composed of a sublimable material (e.g. dry ice). The first blasting step properly roughens the surface of the metal base material so that a film, which adheres to the surface during film-forming processing, hardly peels off. In addition, the second blasting step almost fully removes the residual non-sublimable blasting material adhering to the surface of the metal base material, thereby preventing the generation of particles deriving from the residual non-sublimable blasting material falling off the metal base material. | 03-17-2011 |
20120115400 | SURFACE TREATMENT METHOD, SHOWER HEAD, PROCESSING CONTAINER, AND PROCESSING APPARATUS USING THEM - The method of the present invention includes: a first blasting step of carrying out blasting of the surface of a metal base material, such as a shower head or a processing container, by using a blasting material composed of a non-sublimable material (e.g. alumina); and a second blasting step of carrying out blasting of the surface of the metal base material, which has undergone the first blasting step, by using a blasting material composed of a sublimable material (e.g. dry ice). The first blasting step properly roughens the surface of the metal base material so that a film, which adheres to the surface during film-forming processing, hardly peels off. In addition, the second blasting step almost fully removes the residual non-sublimable blasting material adhering to the surface of the metal base material, thereby preventing the generation of particles deriving from the residual non-sublimable blasting material falling off the metal base material. | 05-10-2012 |
Patent application number | Description | Published |
20100187838 | DOOR HANDLE DEVICE - A door handle device capable of operating a door opening/closing mechanism of a vehicle is disclosed. The door handle device includes a support member, door handle, lock detection electrode, and capacitance sensor. The door handle includes a first end, second end, pivot portion, and operation portion. The capacitance sensor detects issuance of a door lock command from a change in capacitance between an outer panel and the lock detection electrode. The door handle includes a first handle case and second handle case, which covers the first handle case. The lock detection electrode is arranged proximal to and facing toward an inner surface of an upper wall or lower wall of the second handle case. The lock detection electrode is encompassed by a waterproof elastic body. | 07-29-2010 |
20100192329 | DOOR HANDLE DEVICE - A door handle device capable of operating a door opening/closing mechanism of a vehicle is disclosed. The door handle device includes a support member, a door handle, a circuit substrate, a lock detection electrode, a capacitance sensor, and an auxiliary electrode. The circuit substrate is arranged in the door handle and includes a ground electrode. The lock detection electrode is mounted on the circuit substrate and capacitance-coupled to an outer panel of the door. The capacitance sensor is connected to the lock detection electrode and detects the issuance of a door lock command based on a change in a first capacitance between the outer panel and the lock detection electrode. The auxiliary electrode is capacitance-coupled to the ground electrode to form a second capacitance connected in parallel to the first capacitance between the auxiliary electrode and the ground electrode. | 08-05-2010 |
Patent application number | Description | Published |
20090026435 | Phase change random access meomory and semiconductor device - A phase change random access memory comprises an under electrode; an interlayer insulating layer which is formed on the under electrode; an impurity diffusion layer which is embedded into a pore through the interlayer insulating layer; a phase change recording layer which is formed on the interlayer insulating layer; an upper electrode which is formed on the phase change recording layer; a side gate electrode which is located on an inner wall of the pore into which the impurity diffusion layer is embedded; and a side gate insulating layer which is located between the side gate electrode and the impurity diffusion layer, wherein the side gate electrode applies an electric field to the impurity diffusion layer via the side gate insulating lay, the impurity diffusion layer is depleted, and so that an effective diameter of the impurity diffusion layer can become smaller than the pore diameter. | 01-29-2009 |
20090134379 | Phase-change nonvolatile memory and manufacturing method therefor - A phase-change nonvolatile memory (PRAM) is constituted of a semiconductor substrate, a lower electrode, a first interlayer insulating film having a first hole, an impurity diffusion layer embedded in the first hole, a second interlayer insulating film having a second hole whose diameter is smaller than the diameter of the first hole, a phase-change recording layer, and an upper electrode. The impurity diffusion layer is constituted of two semiconductor layers having different conductivity types, wherein one semiconductor layer is constituted of a base portion and a projecting portion having a heating spot in contact with the phase-change recording layer, while the other semiconductor layer is formed to surround the projecting portion. A depletion layer is formed in proximity to the junction surface so as to reduce the diameter of the heating spot, thus reducing the current value Ireset for writing data in to the phase-change recording layer. | 05-28-2009 |
20110089394 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first insulating film over a semiconductor substrate. The first insulating film includes a first opening, a first electrode in the first opening, and a second insulating film over the first insulating film. The second insulating film includes a second opening that is positioned over the first electrode. The second opening includes a first conductive film. The first conductive film is electrically coupled to the first electrode. The first conductive film includes a top surface that is lower than a top surface of the second opening. The second opening includes a phase change material film. The phase change material film includes first and second portions. The first portion is surrounded by the first electrode and the first conductive film. | 04-21-2011 |
20120056148 | Semiconductor device - A semiconductor device may include, but is not limited to: a first insulating film; a second insulating film over the first insulating film; a first memory structure between the first and second insulating films; and a third insulating film between the first and second insulating films. The first memory structure may include, but is not limited to: a heater electrode; and a phase-change memory element between the heater electrode and the second insulating film. The phase-change memory element contacts the heater electrode. The third insulating film covers at least a side surface of the phase-change memory element. Empty space is positioned adjacent to at least one of the heater electrode and the third insulating film. | 03-08-2012 |
20120256152 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: forming a first insulating film that covers a substrate; forming a conductive plug that penetrates the first insulating film; forming a hole portion on the conductive plug by partly removing upper part of the conductive plug, wherein the hole portion has a top surface of the conductive plug as a bottom surface, and has the first insulating film of a portion that covered the partly removed conductive plug as a sidewall; forming a sidewall insulating film that exposes a part of the bottom surface of the hole portion while covering the sidewall of the hole portion and a bottom portion of the hole portion; forming a variable resistance film that covers the sidewall insulating film and the bottom surface of the hole portion; and forming a conductive film that covers the variable resistance film. | 10-11-2012 |
20130005113 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises: forming a processing target; forming a first supporter on the processing target; forming a first mask so as to contact one side surface of the first mask with a side surface of the first supporter; patterning the processing target using, as masks, the first mask and the first supporter; forming a second supporter so as to be contacted with a side surface of the processing target exposed in first processing step and the other side surface of the first mask; removing the first supporter; and patterning the processing target using, as masks, the first mask and the second supporter. | 01-03-2013 |
20130095633 | METHODS OF MANUFACTURING VARIABLE RESISTANCE MEMORY AND SEMICONDUCTOR DEVICE - Disclosed herein a method of manufacturing a variable resistance memory, which comprises: forming a conductive plug on a substrate; forming a variable resistance film above the substrate, the variable resistance film covering a top surface of the conductive plug; forming an insulating interlayer above the substrate, the insulating interlayer covering a top surface of the conductive plug; forming a hole in the insulating interlayer by removing a part of the insulating interlayer disposed above the conductive plug; and forming a first electroconductive film in the hole extending from a top surface of the insulating interlayer so as to be in contact with the variable resistance film and to be electrically connected with the conductive plug via the variable resistance film. | 04-18-2013 |
20140021428 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A semiconductor device comprises a first transistor including a first diffusion region, a first body region, and a second diffusion region, formed to align in a direction orthogonal to a main surface; a second transistor including a third diffusion region, a second body region, and a fourth diffusion region, formed to align in a direction orthogonal to the main surface; a first variable resistance element provided in the second diffusion region of the first transistor; a second variable resistance element provided in the fourth diffusion region of the second transistor; a bit line commonly connected to the first variable resistance element and the second variable resistance element; a first word line arranged on a first side of the first body region; a second word line arrange between a second side of the first body region and a first side of the second body region; and a third word line arranged on a second side of the second body region. | 01-23-2014 |
Patent application number | Description | Published |
20080211443 | ELECTRONIC APPARATUS AND METHOD OF CONTROLLING ELECTRIC MOTOR MOUNTED IN ELECTRONIC APPARATUS - An electronic apparatus includes: a timer member that clocks time on the basis of the power supplied from a power source. A power supply member supplies the power to an electric motor of the electronic apparatus and to the timer member from the power source and interrupts the power supply thereto. A heat storage calculating member calculates heat storage of the electric motor and calculates heat storage of the electric motor after stop of the drive on the basis of the time clocked by the timer member. A controller controls the electric motor and controls the power supply member by initiating power-on and power-off operations. This is performed so as to maintain the power supply to the timer member and the heat storage calculating member during a predetermined time, even after the power-off operation of the operation member. | 09-04-2008 |
20110129274 | PRINTING APPARATUS AND ABNORMALITY DETERMINING METHOD - A printing apparatus includes a tray loading a medium and detachably mounted to a main body; a transport roller rotated by driving of a transport motor to transport the medium while coming into contact with the medium supplied from the tray to a transport path; a print, condition setting unit setting a print mode among a plurality of print modes in which different transport speeds are different; a control unit controlling the driving of the transport motor based on the set print mode and a rotational amount of the transport roller; a threshold value setting unit setting a threshold value corresponding to at least the set print, mode; and a determination unit measuring a monitoring value indicating a load of the transport motor during a transport period of the medium and determining there is an abnormality when the monitoring value is larger than the set threshold value. | 06-02-2011 |
20120026217 | PRINTING APPARATUS - A printing apparatus includes a motor that drives an object to be driven; a detection unit that detects the speed of the object to be driven; and a control unit that controls driving of the motor based on a speed profile including an acceleration range, a constant-speed range, and a deceleration range, and determines that the speed of the object to be driven is abnormal when the difference between the detection speed of the detection unit and the speed of the speed profile exceeds a threshold value, wherein a first threshold value is set in the constant-speed range, and a second threshold value, which is higher than the first threshold value, is set in at least a portion of the acceleration range and the deceleration range. | 02-02-2012 |