Patent application number | Description | Published |
20090051914 | Method and System for Inspecting Indirect Bandgap Semiconductor Structure | 02-26-2009 |
20090206287 | METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING - Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence ( | 08-20-2009 |
20110025839 | WAFER IMAGING AND PROCESSING METHOD AND APPARATUS | 02-03-2011 |
20110117681 | THIN FILM IMAGING METHOD AND APPARATUS - Methods and apparatus are presented for monitoring the deposition and/or post-deposition processing of semiconductor thin films using photoluminescence imaging. The photoluminescence images are analysed to determine one or more properties of the semiconductor film, and variations thereof across the film. These properties are used to infer information about the deposition process, which can then be used to adjust the deposition process conditions and the conditions of subsequent processing steps. The methods and apparatus have particular application to thin film-based solar cells. | 05-19-2011 |
20140039820 | QUANTITATIVE SERIES RESISTANCE IMAGING OF PHOTOVOLTAIC CELLS - Luminescence-based methods are disclosed for determining quantitative values for the series resistance across a photovoltaic cell, preferably without making electrical contact to the cell. Luminescence signals are generated by exposing the cell to uniform and patterned illumination with excitation light selected to generate luminescence from the cell, with the illumination patterns preferably produced using one or more filters selected to attenuate the excitation light and transmit the luminescence. | 02-06-2014 |
Patent application number | Description | Published |
20100025588 | DETERMINING DIFFUSION LENGTH OF MINORITY CARRIERS USING LUMINESCENCE | 02-04-2010 |
20110188733 | Photovoltaic Cell Manufacturing - Disclosed is a method ( | 08-04-2011 |
20120033067 | Method and System for Inspecting Indirect Bandgap Semiconductor Structure | 02-09-2012 |
20120142125 | PHOTOLUMINESCENCE IMAGING SYSTEMS FOR SILICON PHOTOVOLTAIC CELL MANUFACTURING - A method of photoluminence (PL) imaging of a series of silicon wafers, the method including the step of: utilizing incident illumination of a wavelength greater than 808 nm. The present invention further provides a method of analysing silicon semiconductor material utilising various illumination, camera and filter combinations. In some embodiments the PL response is captured by a MOSIR camera. In another embodiment a camera is used to capture the entire PL response and a long pass filter is applied to block a portion of the signal reaching the camera/detector. | 06-07-2012 |
20120181452 | SEPARATION OF DOPING DENSITY AND MINORITY CARRIER LIFETIME IN PHOTOLUMINESCENCE MEASUREMENTS ON SEMICONDUCTOR MATERIALS - Methods are presented for separating the effects of background doping density and effective minority carrier lifetime on photoluminescence (PL) generated from semiconductor materials. In one embodiment the background doping density is measured by another technique, enabling PL measurements to be analysed in terms of effective minority carrier lifetime. In another embodiment the effective lifetime is measured by another technique, enabling PL measurements to be analysed in terms of background doping density. In yet another embodiment, the effect of background doping density is removed by calculating intensity ratios of two PL measurements obtained in different spectral regions, or generated by different excitation wavelengths. The methods are particularly useful for bulk samples such as bricks or ingots of silicon, where information can be obtained over a much wider range of bulk lifetime values than is possible with thin, surface-limited samples such as silicon wafers. The methods may find application in solar cell manufacturing for improving the manufacture of silicon ingots and bricks, or for providing a cutting guide for wafering. | 07-19-2012 |
20120257044 | METHOD AND SYSTEM FOR INSPECTING INDIRECT BANDGAP SEMICONDUCTOR STRUCTURE | 10-11-2012 |
20130043405 | In-Line Photoluminescence Imaging of Semiconductor Devices - Methods and systems are presented for acquiring photoluminescence images ( | 02-21-2013 |
20130062536 | Illumination Systems and Methods for Photoluminescence Imaging of Photovoltaic Cells and Wafers - Methods are presented for analysing semiconductor materials ( | 03-14-2013 |
20140191776 | METHOD AND SYSTEM FOR TESTING INDIRECT BANDGAP SEMICONDUCTOR DEVICES USING LUMINESCENCE IMAGING - Embodiments of methods and systems for identifying or determining spatially resolved properties in indirect bandgap semiconductor devices such as solar cells are described. In one embodiment, spatially resolved properties of an indirect bandgap semiconductor device are determined by externally exciting the indirect bandgap semiconductor device to cause the indirect bandgap semiconductor device to emit luminescence ( | 07-10-2014 |