Patent application number | Description | Published |
20080211352 | Acoustic mirror for a bulk acoustic wave structure - According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure. | 09-04-2008 |
20080241365 | Acoustic mirror structure for a bulk acoustic wave structure and method for fabricating same - According to one embodiment of the invention, an acoustic mirror structure situated in a bulk acoustic wave structure includes a number of alternating low acoustic impedance and high acoustic impedance layers situated on a substrate. Each high acoustic impedance layer includes a first mole percent of a primary metal and a second mole percent of a secondary metal, where the first mole percent of the primary metal is greater than the second mole percent of the secondary metal, and where the secondary metal causes each high acoustic impedance layer to have increased resistivity. According to this exemplary embodiment, the second mole percent of the secondary metal can cause only a minimal decrease in density of each high acoustic impedance layer. The increased resistivity of each high acoustic impedance layer can cause a reduction in electrical loss in the bulk acoustic wave structure. | 10-02-2008 |
20090221129 | SEMICONDUCTOR SEAL RING AND METHOD OF MANUFACTURE THEREOF - An improved semiconductor seal ring and method therefore is described. The seal ring comprises a thick layer wherein at least a portion of the thick layer is removed from a singulation street prior to singulation, thereby avoiding damage to the thick layer during the singulation process. A thin moisture-proof barrier layer is preferably deposited over at least a portion of the thick layer to seal at least an edge of the thick layer. A thick nonmetallic layer preferably used for fabrication of active circuit elements may advantageously be employed as the thick layer (for example, an aluminum nitride (AlN) layer in, for example, a bulk acoustic wave (BAW) filter device). A thin amorphous nonmetallic layer (e.g., a silicon nitride (SiN) layer) may preferably be deposited over the thick layer. Alternatively, other materials may be used. | 09-03-2009 |
20110121916 | HYBRID BULK ACOUSTIC WAVE RESONATOR - A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed. | 05-26-2011 |
20130176085 | HYBRID BULK ACOUSTIC WAVE RESONATOR - A hybrid bulk acoustic wave (BAW) resonator comprises a first electrode, a second. electrode, a piezoelectric layer disposed between the first and second electrodes, and a single mirror pair disposed adjacent the second electrode. In one example, the hybrid bulk acoustic wave resonator further comprises a substrate, and the first electrode is disposed adjacent the substrate. A method of fabricating a hybrid BAW resonator is also disclosed. | 07-11-2013 |
Patent application number | Description | Published |
20090017326 | Method for forming an acoustic mirror with reduced metal layer roughness and related structure - According to an exemplary embodiment, a method of forming a metal layer having reduced roughness includes a step of forming a seed layer over a dielectric layer. The method further includes a step of forming the metal layer over the seed layer. The seed layer causes a top surface of the metal layer to have reduced roughness. The seed layer and the metal layer can be formed in a same process chamber or in different process chambers. The dielectric layer, the seed layer, and the metal layer having reduced roughness can be utilized in an acoustic mirror structure. | 01-15-2009 |
20090045703 | Bulk acoustic wave structure with aluminum cooper nitride piezoelectric layer and related method - According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer. | 02-19-2009 |
20090045704 | Method for forming a multi-layer electrode underlying a piezoelectric layer and related structure - According to an exemplary embodiment, a method of forming a multi-layer electrode for growing a piezoelectric layer thereon includes a step of forming a high conductivity metal layer over a substrate. The method further includes a step of forming a seed layer over the high conductivity metal layer. The method further includes a step of forming a high density metal layer over the seed layer. The method further includes a step of forming a piezoelectric layer over the high density metal layer. The high conductivity metal layer, the seed layer, and the high density metal layer form the multi-layer electrode on which the piezoelectric layer is grown. | 02-19-2009 |
20090267453 | BULK ACOUSTIC WAVE RESONATOR WITH CONTROLLED THICKNESS REGION HAVING CONTROLLED ELECTROMECHANICAL COUPLING - According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer situated between upper and lower electrodes, where each of the upper and lower electrodes are a high density metal. The BAW resonator further includes a controlled thickness region including a low density metal segment, where the low density metal segment is situated adjacent to the piezoelectric layer, and where the controlled thickness region has controlled electromechanical coupling. The controlled thickness region can provide reduced electromechanical coupling into lateral modes. The low density metal segment can extend along the perimeter of the BAW resonator. | 10-29-2009 |
20090267457 | Bulk acoustic wave resonator with reduced energy loss - According to an exemplary embodiment, a bulk acoustic wave (BAW) resonator includes a piezoelectric layer having a disrupted texture region, where the disrupted texture region is situated in a controlled thickness region of the BAW resonator. The BAW resonator further includes lower and upper electrodes situated on opposite surfaces of the piezoelectric layer. The controlled thickness region has controlled electromechanical coupling and includes a segment of material situated over the upper electrode. The segment of material can be a metal or a dielectric material. The disrupted texture region can be situated at an edge of the BAW resonator and can extend along a perimeter of the BAW resonator. | 10-29-2009 |
20100068831 | Method for wafer trimming for increased device yield - According to an exemplary embodiment, a method for site-specific trimming of a wafer to provide a target parameter value for a plurality of devices on the wafer includes performing a first measurement of a parameter at a subset of the number of devices on the wafer. The method further includes forming a top layer over the wafer after performing the first measurement. The method further includes performing a second measurement of the parameter at the subset of the devices on the wafer after forming the top layer. The method further includes determining an amount of the top layer to remove across the wafer to provide the target parameter value for the devices by utilizing the first and second measurements of the parameter. The method can be utilized to, for example, achieve a more uniform characteristic frequency for bulk acoustic wave (BAW) filters. | 03-18-2010 |
20100231329 | BAW STRUCTURE WITH REDUCED TOPOGRAPHIC STEPS AND RELATED METHOD - According to one embodiment, a method of forming a segment of a layer of material, where the segment of the layer of material has at least one tapered sidewall, is disclosed, where the method includes forming a mask over the layer of material. The method includes etching the mask and the layer of material in an etch process by controlling an etch rate of the mask and an etch rate of the layer of material so as to form the segment of the layer of material with the at least one tapered sidewall. A first etch chemistry is used to etch the mask and a second etch chemistry is used to etch the layer of material. The etch rates of the mask and the layer of material can be controlled by controlling a ratio of the first and second etch chemistries. The method can be utilized to fabricate BAW structures. | 09-16-2010 |
20130342284 | BULK ACOUSTIC WAVE STRUCTURE WITH ALUMINUM COPPER NITRIDE PIEZOELECTRIC LAYER AND RELATED METHOD - According to an exemplary embodiment, a bulk acoustic wave structure includes a lower electrode situated over a substrate. The bulk acoustic wave structure further includes a piezoelectric layer situated over the lower electrode, where the piezoelectric layer comprises aluminum copper nitride. The bulk acoustic wave structure further includes an upper electrode situated over the lower electrode. The bulk acoustic wave structure can further include a bond pad connected to the upper electrode, where the bond pad comprises aluminum copper. The lower electrode can include a high density metal situated adjacent to the piezoelectric layer and a high conductivity metal layer underlying the high density metal layer. | 12-26-2013 |
Patent application number | Description | Published |
20090248454 | SYSTEM AND METHOD FOR INCREASING CAPACITY IN AN INSURANCE SYSTEM - The invention relates, in various aspects to systems, methods, and computer readable media suited for implementing a commonly administered, quota share-based multi-insurer primary insurance system. | 10-01-2009 |
20110131071 | SYSTEM AND METHOD FOR INCREASING CAPACITY IN AN INSURANCE SYSTEM - The invention relates, in various aspects to systems, methods, and computer readable media suited for implementing a commonly administered, quota share-based multi-insurer primary insurance system. | 06-02-2011 |
20120158439 | SYSTEM AND METHOD FOR INCREASING CAPACITY IN AN INSURANCE SYSTEM - The invention relates, in various aspects to systems, methods, and computer readable media suited for implementing a commonly administered, quota share-based multi-insurer primary insurance system. | 06-21-2012 |
Patent application number | Description | Published |
20120196273 | DEVICES AND METHOD FOR ENRICHMENT AND ALTERATION OF CELLS AND OTHER PARTICLES - The invention features devices and methods for the deterministic separation of particles. Exemplary methods include the enrichment of a sample in a desired particle or the alteration of a desired particle in the device. The devices and methods are advantageously employed to enrich for rare cells, e.g., fetal cells, present in a sample, e.g., maternal blood and rare cell components, e.g., fetal cell nuclei. The invention further provides a method for preferentially lysing cells of interest in a sample, e.g., to extract clinical information from a cellular component, e.g., a nucleus, of the cells of interest. In general, the method employs differential lysis between the cells of interest and other cells (e.g., other nucleated cells) in the sample. | 08-02-2012 |
20120225473 | Devices And Method For Enrichment And Alteration Of Cells And Other Particles - The invention features devices and methods for the deterministic separation of particles. Exemplary methods include the enrichment of a sample in a desired particle or the alteration of a desired particle in the device. The devices and methods are advantageously employed to enrich for rare cells, e.g., fetal cells, present in a sample, e.g., maternal blood and rare cell components, e.g., fetal cell nuclei. The invention further provides a method for preferentially lysing cells of interest in a sample, e.g., to extract clinical information from a cellular component, e.g., a nucleus, of the cells of interest. In general, the method employs differential lysis between the cells of interest and other cells (e.g., other nucleated cells) in the sample. | 09-06-2012 |
20130209988 | MICROFLUIDIC DEVICES FOR THE CAPTURE OF BIOLOGICAL SAMPLE COMPONENTS - Methods and systems for selectively capturing analytes, such as cells, e.g., circulating tumor cells (CTCs), from fluid samples are disclosed. The methods include contacting the sample with an analyte binding moiety that selectively binds to the analytes; optionally separating first components of the sample including a majority of the analytes bound to the binding moieties from second components of the sample using size-based separation, e.g., in a microfluidic channel; adding to the first components of the sample a plurality of binding agents under conditions that enable a plurality of the binding agents to be linked to the analyte binding moieties to form multivalent tagging agents bound to the analyte; passing the first components of the sample past a surface to which is attached a plurality of capture agents that selectively bind to the binding agents; and capturing the analytes by providing conditions that enable the multivalent tagging agents bound to the analytes to bind to one or more of the capture agents. | 08-15-2013 |
20150285809 | MICROFLUIDIC DEVICES FOR THE CAPTURE OF BIOLOGICAL SAMPLE COMPONENTS - Methods and systems for selectively capturing analytes, such as cells, e.g., circulating tumor cells (CTCs), from fluid samples are disclosed. The methods include contacting the sample with an analyte binding moiety that selectively binds to the analytes; optionally separating first components of the sample including a majority of the analytes bound to the binding moieties from second components of the sample using size-based separation, e.g., in a microfluidic channel; adding to the first components of the sample a plurality of binding agents under conditions that enable a plurality of the binding agents to be linked to the analyte binding moieties to form multivalent tagging agents bound to the analyte; passing the first components of the sample past a surface to which is attached a plurality of capture agents that selectively bind to the binding agents; and capturing the analytes by providing conditions that enable the multivalent tagging agents bound to the analytes to bind to one or more of the capture agents. | 10-08-2015 |