Patent application number | Description | Published |
20090050924 | DROOP-FREE HIGH OUTPUT LIGHT EMITTING DEVICES AND METHODS OF FABRICATING AND OPERATING SAME - Light emitting devices include a semiconductor light emitting diode that is configured to operate at a substantially droop-free quantum efficiency while producing warm white light output of at least about 100 lumens/cool white light output of at least about 130 lumens. The semiconductor light emitting diode may include a single semiconductor die of at least about 4 mm | 02-26-2009 |
20090068774 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - A method is disclosed for fabricating an LED The method includes providing an LED chip having an epitaxial region comprising at least a p-type layer and an n-type layer, an ohmic contact formed on at least one of the p-type layer or the n-type layer, and a bond pad formed on the ohmic contact. The bond pad has a total volume less than about 3×10 | 03-12-2009 |
20090104726 | LED Fabrication Via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation. | 04-23-2009 |
20090166659 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode. | 07-02-2009 |
20090242918 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer. | 10-01-2009 |
20100052004 | LED Bonding Structures and Methods of Fabricating LED Bonding Structures - An LED is disclosed that includes a conductive submount, a bond pad having a total volume less than 3×10 | 03-04-2010 |
20100124243 | SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING ELONGATED HOLLOW WAVELENGTH CONVERSION TUBES AND METHODS OF ASSEMBLING SAME - A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described. | 05-20-2010 |
20110042705 | SEMICONDUCTOR LIGHT EMITTING DIODES INCLUDING MULTIPLE BOND PADS ON A SINGLE SEMICONDUCTOR DIE - A light emitting device includes a single semiconductor die light emitting diode and at least five bond pads on the single semiconductor die. The bond pads may be in the four corners and at least one midpoint of the single semiconductor die. A wavelength conversion layer may be provided and bond pad extensions may extend through the wavelength conversion layer. Multiple wire bond connections may also be provided. | 02-24-2011 |
20110310587 | ULTRA-HIGH EFFICACY SEMICONDUCTOR LIGHT EMITTING DEVICES - A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that co mprises an elongated wavelength conversion tube wall having wavelength conversion material such as phosphor dispersed therein uniformly or non-uniformly. The tube need not be cylindrical. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. | 12-22-2011 |
20120007492 | SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING ELONGATED HOLLOW WAVELENGTH CONVERSION TUBES - A semiconductor light emitting apparatus includes an elongated hollow wavelength conversion tube that includes an elongated wavelength conversion tube wall having wavelength conversion material, such as phosphor, dispersed therein. A semiconductor light emitting device is oriented to emit light inside the elongated hollow wavelength conversion tube to impinge upon the elongated wavelength conversion tube wall and the wavelength conversion material dispersed therein. The elongated hollow wavelength conversion tube may have an open end, a crimped end, a reflective end, and/or other configurations. Multiples tubes and/or multiple semiconductor light emitting devices may also be used in various configurations. Related assembling methods are also described. | 01-12-2012 |
20120193649 | LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES - An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die. | 08-02-2012 |
20120193660 | HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES - Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount. | 08-02-2012 |
20120193661 | GAP ENGINEERING FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED. | 08-02-2012 |
20120193662 | REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens. | 08-02-2012 |
20120217530 | Semiconductor Light Emitting Diodes Having Multiple Bond Pads and Current Spreading Structures - A light emitting device includes a diode region comprising a first face and opposing edges, and a bond pad structure comprising at least three bond pads along only one of the opposing edges of the first face. | 08-30-2012 |
20120305949 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad. | 12-06-2012 |
20120319148 | CONFORMAL GEL LAYERS FOR LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME - Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent. | 12-20-2012 |
20130107522 | SEMICONDUCTOR LIGHT EMITTING APPARATUS INCLUDING BULB AND SCREW-TYPE BASE | 05-02-2013 |
20130193453 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face, and the packaging substrate may include positive and negative electrically conductive pads on the packaging face. A plurality of light emitting diodes may be electrically and mechanically coupled to the packaging face of the packaging substrate, with the plurality of light emitting diodes being electrically coupled between the positive and negative electrically conductive pads on the packaging face. A continuous optical coating may be provided on the plurality of light emitting diodes and on the packaging face of the packaging substrate so that the plurality of light emitting diodes are between the optical coating and the packaging substrate. | 08-01-2013 |
20130271972 | GAS COOLED LED LAMP - A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In some embodiments, the LEDs can be mounted on or fixed to a light transmissive submount. In some embodiments, LEDs can be disposed on both sides of a two-sided submount, or on thee or more sides if the submount structure includes three or more mounting surfaces. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the gas is at a pressure of from about 0.5 to about 10 atmospheres and has a thermal conductivity of at least about 60 mW/m-K. | 10-17-2013 |
20130271981 | LED LAMP - A lamp has an optically transmissive enclosure and a base. A tower extends from the base into the enclosure and supports an LED assembly in the enclosure. The LED assembly comprises a plurality of LEDs operable to emit light when energized through an electrical path from the base. The tower and the LED assembly are arranged such that the plurality of LEDs are disposed about the periphery of the tower in a band and face outwardly toward the enclosure to create a source of the light that appears as a glowing filament. The tower forms part of a heat sink that transmits heat from the LED assembly to the ambient environment. The LED assembly has a three-dimensional shape. An electrical interconnect connects a conductor to the heat sink where the conductor is in the electrical path between the LED assembly and the base. | 10-17-2013 |
20130271987 | GAS COOLED LED LAMP - A gas cooled LED lamp and submount is disclosed. The centralized nature of the LEDs allows the LEDs to be configured near the central portion of the optical envelope of the lamp. In example embodiments, the LEDs can be cooled and/or cushioned by a gas in thermal communication with the LED array to enable the LEDs to maintain an appropriate operating temperature for efficient operation and long life. In some embodiments, the LED assembly is mounted on a glass stem. In some embodiments a thermal resistant path is created that prevents overtemperature of the LED array during the making of the lamp. In some embodiments the LED assembly comprises a lead frame and/or metal core board that is bent into a three-dimensional shape to create a desired light pattern in the enclosure or an extruded submount formed into a three-dimensional shape. | 10-17-2013 |
20130271989 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 10-17-2013 |
20130271990 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 10-17-2013 |
20130271991 | LED LAMP - A lamp has an optically transmissive enclosure and a base. A tower extends from the base into the enclosure and supports an LED assembly in the enclosure. The LED assembly comprises a plurality of LEDs operable to emit light when energized through an electrical path from the base. The tower and the LED assembly are arranged such that the plurality of LEDs are disposed about the periphery of the tower in a band and face outwardly toward the enclosure to create a source of the light that appears as a glowing filament. The tower forms part of a heat sink that transmits heat from the LED assembly to the ambient environment. The LED assembly has a three-dimensional shape. An electrical interconnect connects a conductor to the heat sink where the conductor is in the electrical path between the LED assembly and the base. | 10-17-2013 |
20130279175 | LED LAMP - A lamp has an optically transmissive enclosure and a base defining a longitudinal axis of the lamp that extends from the base to the free end of the enclosure. An LED assembly is positioned in the optically transmissive enclosure. The LED assembly includes LEDs operable to emit light when energized through an electrical path from the base. The LED assembly is arranged such that the plurality of LEDs face perpendicularly to the longitudinal axis of the lamp. The emission profile of the LEDs being at least 120 degrees FWHM. | 10-24-2013 |
20130294092 | LED LAMP - A lamp has an optically transmissive enclosure and a base defining a longitudinal axis of the lamp extending from the base to the free end of the enclosure. A heat sink is at least partially located in the enclosure and includes a tower that extends along the longitudinal axis of the lamp. An LED assembly is positioned in the optically transmissive enclosure. The LED assembly comprises a lead frame circuit or a flex circuit where LEDs are attached to the circuits. The lead frame and flex circuit are formed into a three-dimensional shape and are thermally coupled to the tower. | 11-07-2013 |
20130301252 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. A board supports lamp electronics for the lamp and is located in the enclosure. The LED array is mounted to the board and LEDs are mounted on a submount formed to have a three dimensional shape. The board is electrically coupled to the LED array and the submount may be thermally coupled to the gas for dissipating heat from the plurality of LEDs. | 11-14-2013 |
20140036497 | LED LAMP - A lamp comprises an enclosure comprising a reflector and a lens where the reflector is made of thermally conductive material. A base is coupled to the enclosure. An LED is located in the enclosure and emits light when energized through an electrical path from the base. A heat sink comprises a heat dissipating portion that may be at least partially exposed to the ambient environment and a heat conducting portion that is thermally coupled to the LED. The reflector is thermally coupled to the heat sink and is exposed to the exterior of the lamp such that heat from the heat sink may be dissipated to the ambient environment at least partially through the reflector. | 02-06-2014 |
20140119007 | LED LAMP WITH SHAPED LIGHT DISTRIBUTION - A lamp comprises an optically transmissive enclosure. A plurality of LEDs for emitting light are located to emit light toward the enclosure. The enclosure has at least one reflective area disposed on the enclosure to reflect a portion of the light into the enclosure to create a desired luminous intensity distribution. | 05-01-2014 |
20140167089 | HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE - A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts. | 06-19-2014 |
20140239794 | GAS COOLED LED LAMP - In one embodiment, a lamp comprises an optically transmissive enclosure. An LED array is disposed in the optically transmissive enclosure operable to emit light when energized through an electrical connection. A gas is contained in the enclosure to provide thermal coupling to the LED array. The gas may include oxygen. | 08-28-2014 |