Patent application number | Description | Published |
20090050906 | Photo Detector and a Display Panel having the Same - A photo detector has a sensing TFT (thin film transistor) and a photodiode. The sensing TFT has a gate and a base. The photodiode has an intrinsic semiconductor region electrically connected to the gate and the base of the sensing TFT. The sensing TFT and the photodiode both have a structure comprising low temperature poly-silicon. A display panel contains the photo detector is also disclosed. | 02-26-2009 |
20090280606 | METHOD FOR FABRICATING PHOTO SENSOR - A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor. | 11-12-2009 |
20090283850 | OPTICAL SENSOR AND METHOD OF MAKING THE SAME - An optical sensor includes a silicon-rich dielectric photosensitive device and a read-out device. The silicon-rich dielectric photosensitive device includes a first electrode, a second electrode, and a photosensitive silicon-rich dielectric layer disposed therebetween. The photosensitive silicon-rich dielectric layer includes a plurality of nanocrystalline silicon crystals therein. The read-out device is electrically connected to the first electrode of the silicon-rich dielectric photosensitive device for reading out opto-electronic signals transmitted from the photo-sensitive silicon-rich dielectric layer. | 11-19-2009 |
20100012944 | THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR OF DISPLAY PANEL AND METHOD OF MAKING THE SAME - A thin film transistor (TFT) formed on a transparent substrate is provided. The thin film transistor includes a patterned semiconductor layer, a gate insulating layer disposed on the patterned semiconductor layer, a gate electrode disposed on the gate insulating layer, and a patterned light-absorbing layer. The patterned semiconductor layer includes a channel region, and a source region and a drain region disposed on two opposite sides of the channel region in the pattern semiconductor layer. The patterned light-absorbing layer is disposed between the transparent substrate and the patterned semiconductor layer. | 01-21-2010 |
20100013001 | METHOD FOR MANUFACTURING NON-VOLATILE MEMORY AND STRUCTURE THEREOF - A method for manufacturing a non-volatile memory and a structure thereof are provided. The manufacturing method comprises the following steps. Firstly, a substrate is provided. Next, a semiconductor layer is formed on the substrate. Then, a Si-rich dielectric layer is formed on the semiconductor layer. After that, a plurality of silicon nanocrystals is formed in the Si-rich dielectric layer by a laser annealing process to form a charge-storing dielectric layer. Last, a gate electrode is formed on the charge-storing dielectric layer. | 01-21-2010 |
20100207033 | X-RAY DETECTOR AND FABRICATION METHOD THEREOF - A structure of X-ray detector includes a Si-rich dielectric material for serving as a photo-sensing layer to increase light sensitivity. The fabrication method of the X-ray detector including the Si-rich dielectric material needs less photolithography-etching processes, so as to reduce the total thickness of thin film layers and decrease process steps and cost. | 08-19-2010 |
20100321341 | PHOTO SENSOR, METHOD OF FORMING THE SAME, AND OPTICAL TOUCH DEVICE - The present invention provides a photo sensor, a method of forming the photo sensor, and a related optical touch device. The photo sensor includes a first electrode, a second electrode, a first silicon-rich dielectric layer and a second silicon-rich dielectric layer. The first silicon-rich dielectric layer is disposed between the first electrode and the second electrode for sensing infrared rays, and the second silicon-rich dielectric layer is disposed between the first silicon-rich dielectric layer and the second electrode for sensing visible light beams. The multi-layer structure including the first silicon-rich dielectric layer and the second silicon-rich dielectric layer enables the single photo sensor to effectively detect both infrared rays and visible light beams. Moreover, the single photo sensor is easily integrated into an optical touch device to form optical touch panel integrated on glass. | 12-23-2010 |
20100327289 | FLAT DISPLAY PANEL, UV SENSOR AND FABRICATION METHOD THEREOF - A UV sensor comprises a silicon-rich dielectric layer with a refractive index in a range of about 1.7 to about 2.5 for serving as the light sensing material of the UV sensor. The fabrication method of the UV sensor can be integrated with the fabrication process of semiconductor devices or flat display panels. | 12-30-2010 |
20100330735 | METHOD OF FORMING OPTICAL SENSOR - A method of forming an optical sensor includes the following steps. A substrate is provided, and a read-out device is formed on the substrate. a first electrode electrically connected to the read-out device is formed on the substrate. a photosensitive silicon-rich dielectric layer is formed on the first electrode, wherein the photosensitive silicon-rich dielectric layer comprises a plurality of nanocrystalline silicon crystals. A second electrode is formed on the photosensitive silicon-rich dielectric layer. | 12-30-2010 |
20110037729 | OLED TOUCH PANEL AND METHOD OF FORMING THE SAME - A displaying region and a sensing region are defined in each pixel region of the OLED touch panel of the present invention. The readout thin film transistor of the sensing region is formed by the same processes with the drive thin film transistor of the displaying region. The top and bottom electrodes of the optical sensor are formed by the same processes with the top and bottom electrodes of the OLED. Accordingly, the present invention can just add a step of forming the patterned sensing dielectric layer to the processes of forming an OLED panel to integrate the optical sensor into the pixel region of the OLED panel. Thus, an OLED touch panel is formed. | 02-17-2011 |
20110317121 | FLAT DISPLAY DEVICE INTEGRATED WITH PHOTOVOLTAIC CELL - A flat display device integrated with a photovoltaic cell is disclosed. The flat display device includes a first substrate, a second substrate, a display medium layer, a first photovoltaic cell, a connecting layer and a conductive structure. The display medium layer is sealed between the first and second substrates. The first photovoltaic cell is disposed on the first substrate. The connecting layer is disposed on the second substrate and is capable of electrically connecting the first photovoltaic cell to an external circuit. The conductive structure is disposed between the first and second substrates, and is electrically connected with the first photovoltaic cell and the connecting layer. | 12-29-2011 |
20130044093 | DISPLAY AND METHOD OF DETERMINING A POSITION OF AN OBJECT APPLIED TO A THREE-DIMENSIONAL INTERACTIVE DISPLAY - A display includes a backlight source, display panel, first light source, and controller. The display panel includes a sensor array for sensing first reflection light generated from an object reflecting first detection light. The first detection light is generated by the backlight source for locating a coordinate of a projection point of the object on the display panel. The first light source is disposed in a first side of the display panel, for repeatedly transmitting second detection light of different transmitting angles to the object at different time to generate a second reflection light. The second reflection light is sensed by the sensor array. The controller is for performing a corresponding operation according to a transmitting angle of the first light source and the coordinate of the projection point when brightness value of the reflective light is substantially greater than a predict value. | 02-21-2013 |
20130100079 | TOUCH DISPLAY DEVICE - A touch display device includes a first substrate, a second substrate, a plurality of sub-pixel regions, a plurality of display devices, a plurality of first optical touch sensor device and second optical touch sensor devices. The first substrate and the second substrate are disposed oppositely. The display devices are disposed in the sub-pixel regions, respectively, to provide images for a first display surface and a second display surface. The first optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the first display surface. The second optical touch sensor devices are disposed on the first substrate and at least corresponding to part of the sub-pixel regions for implementing touch input function on the second display surface. | 04-25-2013 |
20130155057 | THREE-DIMENSIONAL INTERACTIVE DISPLAY APPARATUS AND OPERATION METHOD USING THE SAME - A three-dimensional interactive display apparatus includes a display panel, two light source generators and a processing circuit. The two light source generator generators are configured to respectively emit two lights according to a predetermined sequence, and emission periods of the two second light source generators are configured to not overlap. The processing circuit is configured to sequentially obtain a plurality of images through sensing the two lights by a plurality light sensors, determine the corresponding light source generator of each one image according to the predetermined sequence, and further determine position information of the corresponding light source generator according to image information of the one image. An operation method of the aforementioned three-dimensional interactive display apparatus is also provided. | 06-20-2013 |
20130169596 | THREE-DIMENSIONAL INTERACTION DISPLAY AND OPERATION METHOD THEREOF - A three-dimensional interaction display includes a display panel having a plurality of light sensing devices, a first light emitting device, a second light emitting device, and a processing circuit. The first light emitting device includes a first light emitting surface including a first pattern, and the first pattern includes a first shape boundary having a first total length. The second light emitting device includes a second light emitting surface including a second pattern, and the second pattern includes a second shape boundary having a second total length. The processing circuit is electrically connected to the plurality of light sensing devices for processing an image obtained by the light sensing devices, calculating the total length of the shape boundary of each of the patterns shown in the obtained image, and determining the corresponding light emitting device according to the total length of the shape boundary of each of the patterns. | 07-04-2013 |
20140092068 | OPTICAL TOUCH PANEL AND BRIGHTNESS CONTROL METHOD THEREOF - An optical touch panel includes a light source unit and a processing unit, wherein the processing unit is for executing a brightness control method. The brightness control method includes steps below. The light source unit emits at a first intensity in a touch control mode. Responding to a switching condition, the touch panel is switched into a scan mode, and the light source unit emits at a second intensity in the scan mode. | 04-03-2014 |
20150062088 | OPTICAL TOUCH DEVICE AND METHOD OF FORMING PHOTO SENSOR - A method of forming a photo sensor includes the following steps. A substrate is provided, and a first electrode is formed on the substrate. A first silicon-rich dielectric layer is formed on the first electrode for sensing an infrared ray, wherein the first silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second silicon-rich dielectric layer is formed on the first silicon-rich dielectric layer for sensing visible light beams, wherein the second silicon-rich dielectric layer comprises a silicon-rich oxide layer, a silicon-rich nitride layer, or a silicon-rich oxynitride layer. A second electrode is formed on the second silicon-rich dielectric layer. | 03-05-2015 |