Patent application number | Description | Published |
20090050057 | APPARATUS FOR CONTINUOUS COATING - Apparatus for continuous coating has a chamber wall which forms a processing chamber, thermal insulation which forms a processing area within the chamber, a transportation device for substrates located in the processing area with a substrate transportation direction of the substrates lying in the lengthwise extension of the apparatus for continuous coating, and heating equipment which heats the substrates, is designed to minimize unwanted coating, in particular of parts of the apparatus, in order to minimize the expense of maintaining and servicing the apparatus A condensation element is positioned in the processing chamber, which extends into the processing area and binds the arising vapor through condensation. | 02-26-2009 |
20120055404 | APPARATUS FOR CONTINUOUS COATING - Apparatus for continuous coating has a chamber wall which forms a processing chamber, thermal insulation which forms a processing area within the chamber, a transportation device for substrates located in the processing area with a substrate transportation direction of the substrates lying in the lengthwise extension of the apparatus for continuous coating, and heating equipment which heats the substrates, is designed to minimize unwanted coating, in particular of parts of the apparatus, in order to minimize the expense of maintaining and servicing the apparatus A condensation element is positioned in the processing chamber, which extends into the processing area and binds the arising vapor through condensation. | 03-08-2012 |
Patent application number | Description | Published |
20080268265 | TECHNIQUE FOR FORMING METAL LINES IN A SEMICONDUCTOR BY ADAPTING THE TEMPERATURE DEPENDENCE OF THE LINE RESISTANCE - By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced. | 10-30-2008 |
20090197408 | INCREASING ELECTROMIGRATION RESISTANCE IN AN INTERCONNECT STRUCTURE OF A SEMICONDUCTOR DEVICE BY FORMING AN ALLOY - By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents. | 08-06-2009 |
20110124189 | Increasing Electromigration Resistance in an Interconnect Structure of a Semiconductor Device by Forming an Alloy - By introducing a metallic species into an exposed surface area of a copper region, the electromigration behavior of this surface area may be significantly enhanced. The incorporation of the metallic species may be accomplished in a highly selective manner so as to not unduly affect dielectric material positioned adjacent to the metal region, thereby essentially avoiding undue increase of leakage currents. | 05-26-2011 |
20120088365 | TECHNIQUE FOR FORMING METAL LINES IN A SEMICONDUCTOR BY ADAPTING THE TEMPERATURE DEPENDENCE OF THE LINE RESISTANCE - By moderately introducing defects into a highly conductive material, such as copper, the resistance versus temperature behavior may be significantly modified so that enhanced electromigration behavior and/or electrical performance may be obtained in metallization structures of advanced semiconductor devices. The defect-related portion of the resistance may be moderately increased so as to change the slope of the resistance versus temperature curve, thereby allowing the incorporation of impurity atoms for enhancing the electromigration endurance while not unduly increasing the overall resistance at the operating temperature or even reducing the corresponding resistance at the specified operating temperature. Thus, by appropriately designing the electrical resistance for a target operating temperature, both the electromigration behavior and the electrical performance may be enhanced. | 04-12-2012 |