Patent application number | Description | Published |
20080211096 | Switching Element and Reconfigurable Logic Integrated Circuit - A switching element is of a configuration that includes: an ion conduction layer ( | 09-04-2008 |
20080212259 | Switching Element, Switching Element Fabriction Method, Reconfigurable Logic Integrated Circuit, And Memory Element - The switching element of the present invention includes an ion conduction layer ( | 09-04-2008 |
20090020742 | SOLID ELECTROLYTE SWITCHING ELEMENT, AND FABRICATION METHOD OF THE SOLID ELECTROLYTE ELEMENT, AND INTEGRATED CIRCUIT - The switching element of the present invention is of a configuration that includes: a first electrode ( | 01-22-2009 |
20090289371 | SWITCHING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A switching element includes a first electrode, a second electrode, an ionic conductive portion and a buffer portion. The first electrode is configured to be available to feed metal ions. The ionic conductive portion is configured to contact the first electrode and the second electrode, and include an ionic conductor in which the metal ions are movable. The buffer portion is configured to have a smaller hardness than the ionic conductor, and be located between the first electrode and the second electrode along the ionic conductive portion. Electrical characteristics are switched by depositing or melting metal between said first electrode and said second electrode based on a potential difference between said first electrode and said second electrode. | 11-26-2009 |
20090309088 | SWITCHING DEVICE, SEMICONDUCTOR DEVICE, PROGRAMMABLE LOGIC INTEGRATED CIRCUIT, AND MEMORY DEVICE - A typical switching device according to the present invention comprises first insulating layer | 12-17-2009 |
20100133501 | SWITCHING ELEMENT AND METHOD FOR MANUFACTURING SWITCHING ELEMENT - A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer | 06-03-2010 |
20100207091 | SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF - A switching element according to the present invention includes an ion-conducting layer, first electrode | 08-19-2010 |
20110260133 | SWITCHING ELEMENT AND MANUFACTURING METHOD THEREOF - A switching element includes: a first electrode supplying metal ions; a second electrode less ionizable than the first electrode; and an ion conducting layer arranged between the first electrode and the second electrode and containing a metal oxide that can conduct the metal ions. The ion conducting layer includes two or more layers of different types, and one of the ion conducting layers that is closest to the first electrode has a larger diffusion coefficient for the metal ions than that of the other ion conducting layer(s). | 10-27-2011 |
20110272664 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode. | 11-10-2011 |
20120091426 | RESISTANCE-VARIABLE ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order. | 04-19-2012 |
20120280200 | RESISTANCE CHANGING ELEMENT, SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING RESISTANCE CHANGE ELEMENT - A resistance changing element according to the present invention comprises a first electrode ( | 11-08-2012 |
20130009123 | VARIABLE RESISTANCE ELEMENT, SEMICONDUCTOR DEVICE INCLUDING VARIABLE RESISTANCE ELEMENT, AND METHODS FOR MANUFACTURING VARIABLE RESISTANCE ELEMENT AND SEMICONDUCTOR DEVICE - A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode. | 01-10-2013 |
20130181739 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE CONTROL METHOD - A semiconductor device comprises: reconfigurable logic circuit that includes plurality of resistance change elements; logical configuration of the reconfigurable logic circuit being decided depending on whether each of plurality of resistance change elements is in first resistance state or in second resistance state whose resistance value is lower than resistance value of first resistance state; resistance value monitor circuit that includes resistance change element pre-programmed to the first resistance state; the resistance value monitor circuit detecting whether or not pre-programmed resistance change element retains the first resistance state; and controller that, in case it is detected that resistance change element provided in resistance value monitor circuit doe not retain first resistance state, applies voltage used in programming from second resistance state to first resistance state to resistance change element retaining first resistance states, out of plurality of resistance change elements provided in reconfigurable logic circuit. | 07-18-2013 |