Thomas Schulz
Thomas Schulz, Waldkirch DE
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20100141964 | Light barrier - The invention relates to a light barrier for the detection of an object ( | 06-10-2010 |
20100175975 | Device with at least one control element - The invention relates to a device with at least one control element, which is positioned in a device housing for the device, such that the control element is designed as a snap disk, which is made of metal, and such that the snap disk has a rim which is connected to the device housing through material engagement and which forms a seal between the device housing and the control element, such that an area of the snap disk that borders the rim is designed as a reversibly deformable uncoupling area. | 07-15-2010 |
Thomas Schulz, Austin, TX US
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20080211025 | SOI field effect transistor and corresponding field effect transistor - A first SOI field effect transistor with predetermined transistor properties, comprising: a laterally delimited layer sequence with a gate-insulating layer and a gate region on an undoped substrate; a spacer layer having a predetermined thickness on at least a portion of the sidewalls of the laterally delimited layer sequence; and two source/drain regions in two surface regions of the substrate which are adjoined by the spacer layer, with a predetermined dopant concentration profile, the layer sequence and the spacer layer forming a shading structure that prevents dopant from being introduced into a surface region of the substrate between the two source/drain regions during the production of the first SOI field effect transistor, wherein the predetermined transistor properties of the first SOI field effect transistor are set by setting the thickness of the spacer layer and by the dopant concentration profile. | 09-04-2008 |
20090065870 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. One embodiment includes a semiconductor device including a workpiece, the workpiece including a first region and a second region proximate the first region. A first transistor is disposed in the first region of the workpiece, the first transistor having at least two first gate electrodes. A first gate dielectric is disposed proximate each of the at least two first gate electrodes, the first gate dielectric comprising a first material. A second transistor is disposed in the second region of the workpiece, the second transistor having at least two second gate electrodes. A second gate dielectric is disposed proximate each of the at least two second gate electrodes, the second gate dielectric comprising a second material. The second material is different than the first material. | 03-12-2009 |
20090114979 | FinFET Device with Gate Electrode and Spacers - A semiconductor device includes a source region, a drain region, and a fin that connects the source region to the drain region. A gate electrode having a substantially planar surface overlies the fin and is positioned between the drain region and the source region. A first set of spacers is positioned between a first sidewall of the gate electrode and the source region and between a second sidewall of the gate electrode and the drain region. A second set of spacers is positioned on at least a portion of a top surface of the source region and the drain region and alongside at least a portion of the first set of spacers. At least a portion of sidewalls of the second set of spacers contacts a portion of the first or second sidewall of the gate electrode. | 05-07-2009 |
20090184355 | INTEGRATED CIRCUIT ARRANGEMENT WITH CAPACITOR AND FABRICATION METHOD - An integrated circuit arrangement contains an insulating region, which is part of a planar insulating layer, and a capacitor which contains: near and far electrode regions near and remote from the insulating region and a dielectric region. The capacitor and an active component are on the same side of the insulating layer, and the near electrode region and an active region of the component are planar and parallel to the insulating layer. The near electrode region is monocrystalline and contains multiple webs. | 07-23-2009 |
20100129968 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices with transistors having different gate dielectric materials and methods of manufacture thereof are disclosed. One embodiment includes a semiconductor device including a workpiece, the workpiece including a first region and a second region proximate the first region. A first transistor is disposed in the first region of the workpiece, the first transistor having at least two first gate electrodes. A first gate dielectric is disposed proximate each of the at least two first gate electrodes, the first gate dielectric comprising a first material. A second transistor is disposed in the second region of the workpiece, the second transistor having at least two second gate electrodes. A second gate dielectric is disposed proximate each of the at least two second gate electrodes, the second gate dielectric comprising a second material. The second material is different than the first material. | 05-27-2010 |
Thomas Schulz, Unterensingen DE
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20090050366 | Arrangement for Current Distribution and Contact Arrangement and Fuse Protection Thereof of the Outgoing Cables - The invention relates to a potential distribution system for motor vehicles, which makes provision for a reserve on contact bars of an excess number of connection possibilities for further outlets. The connection possibilities which are not required can be closed off with a blanking plug and the connection possibilities which are required are brought in contact by means of an intermediate element, wherein the intermediate element can be designed as a fuse box or as an intermediate plug with integrated fuses. | 02-26-2009 |
20110237102 | Plug-In Connection for an Occupant Protection Means - The invention relates to a plug-in connection (S) comprising a socket element ( | 09-29-2011 |
20110273809 | Method and Device for Protecting a Lithium Ion Battery in a Vehicle - The invention relates to a method for protecting a lithium ion battery ( | 11-10-2011 |
20130207463 | Device for Stabilizing a Supply Voltage in a Motor Vehicle | 08-15-2013 |
Thomas Schulz, Bietigheim-Bissingen DE
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20120126882 | METHOD FOR SUPPRESSING INTERFERENCE - In a method for suppressing interference in a controlled variable in a control circuit, in which the actuating variable is the useful signal, the controlled variable is detected continuously, at two successive sampling instants in each case, the values of the controlled variable are subtracted, and if the absolute amount of the difference deviates by a predefinable setpoint value, at least one control parameter is modified, in such a way that the response of the actuating variable to the interference is minimized. | 05-24-2012 |
Thomas Schulz, Haverlee BE
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20120199909 | Semiconductor Devices and Methods of Manufacture Thereof - Semiconductor devices and methods of manufacture thereof are disclosed. A complimentary metal oxide semiconductor (CMOS) device includes a PMOS transistor having at least two first gate electrodes comprising a first parameter, and an NMOS transistor having at least two second gate electrodes comprising a second parameter, wherein the second parameter is different than the first parameter. The first parameter and the second parameter may comprise the thickness or the dopant profile of the gate electrode materials of the PMOS and NMOS transistors. The first and second parameter of the at least two first gate electrodes and the at least two second gate electrodes establish the work function of the PMOS and NMOS transistors, respectively. | 08-09-2012 |
Thomas Schulz, Athens, GA US
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20130280802 | AGENTS AND METHODS FOR INHIBITING HUMAN PLURIPOTENT STEM CELL GROWTH - The present invention relates to compositions and methods for inhibiting or suppressing undifferentiated or pluripotent stem cell growth and proliferation in a differentiated or differentiating cell population or culture. | 10-24-2013 |
Thomas Schulz, Dobern DE
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20140011148 | METHOD FOR THE CONTROLLED OPERATION OF AN INDUSTRIAL OVEN WHICH IS HEATED IN A REGENERATIVE MANNER, CONTROL DEVICE, AND INDUSTRIAL OVEN - The invention relates to a method for the controlled operation of an industrial oven which is heated in a regenerative manner and which comprises an oven chamber, in particular a melting tank, in particular for glass, having the following steps: injecting fuel into the oven chamber via at least one fuel injector, which is designed to inject fuel, practically without combustion air in particular, conducting combustion air to the oven chamber in a first period duration and conducting exhaust gas (AG) out of the oven chamber in a second period duration separately from the fuel in a periodically alternating manner by means of a left regenerator and right regenerator which are associated with the at least one fuel injector and which are designed to regeneratively store heat from the exhaust gas and transmit heat to the combustion air. A supply of the combustion air is automatically controlled by means of a control loop. The control loop takes into account an excess air coefficient that is specified in the method as well as the location of the entrance of the excess air upstream, in, or downstream of the air-side regenerator. A corresponding control device and an industrial oven which comprises such a control device and which is heated in a regenerative manner are likewise claimed. | 01-09-2014 |
Thomas Schulz, Niederschoena DE
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20140031225 | SAFENED HERBICIDAL COMPOSITIONS INCLUDING 4-AMINO-3-CHLORO-5-FLUORO-6-(4-CHLORO-2-FLUORO-3-METHOXYPHENYL)PYRIDINE-2- -CARBOXYLIC ACID OR A DERIVATIVE THEREOF AND METHODS FOR THEIR USE - A safened herbicidal composition for use, for example, in wheat or barley, comprising a herbicidally effective amount of (a) a compound of formula (I): | 01-30-2014 |
20140256550 | HERBICIDAL COMPOSITIONS COMPRISING ISOXABEN AND AMINOPYRALID - Herbicidal compositions and methods of controlling undesirable vegetation using a combination of (a) isoxaben, (b) aminopyralid or an agriculturally acceptable salt or ester thereof, and optionally (c) flufenacet and (d) diflufenacet provide control of broad-leaved weeds. | 09-11-2014 |
20140256551 | HERBICIDAL COMPOSITIONS COMPRISING ISOXABEN AND FLUFENACET - Herbicidal compositions and methods of controlling undesirable vegetation using a combination of (a) isoxaben, (b) flufenacet, and optionally (c) diflufenican provide control of broad-leaved weeds. | 09-11-2014 |
Thomas Schulz, Salzgitter DE
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20140034196 | HOHERFESTER MEHRPHASENSTAHL MIT AUSGEZEICHNETEN UMFORMEIGENSCHAFTEN HIGH STRENGTH MULTI-PHASE STEEL HAVING EXCELLENT FORMING PROPERTIES - The invention relates to a high strength multi-phase steel for a cold- or hot-rolled steel strip having excellent forming properties, in particular for light vehicle construction, comprising the elements (contents in mass %): C 0.060 to=0.115; Al 0.020 to=0.060; Si 0.100 to=0.500; Mn 1.300 to=2.500; P=0.025; S=0.0100; Cr 0.280 to=0.480; Mo<0.150; Ti=0.005 to=0.050; Nb=0.005 to=0.050; B=0.0005 to=0.0060; N=0.0100; the remainder being iron including the usual elements present in steel and which are not mentioned above. | 02-06-2014 |
20150034215 | HIGH STRENGTH MULTI-PHASE STEEL, AND METHOD FOR PRODUCING A STRIP FROM SAID STEEL - A high-strength multi-phase steel having tensile strengths of no less than 580 MPa, preferably with a dual-phase structure for a cold-rolled or hot-rolled steel strip having improved forming properties, in particular for lightweight vehicle construction is disclosed, containing the following elements (contents in % by mass): C 0.075 to ≦0.105; Si 0.200 to ≦0.300; Mn 1.000 to ≦2.000; Cr 0.280 to ≦0.480; Al 0.10 to ≦0.060; P ≦0.020; Nb ≧0.005 to ≧0.025; N ≧0.0100; S ≧0.0050; the remainder iron, including conventional steel-accompanying elements not mentioned above. | 02-05-2015 |
20150041024 | ULTRAHIGH-STRENGTH MULTIPHASE STEEL WITH IMPROVED PROPERTIES DURING PRODUCTION AND PROCESSING - In a process for producing a cold- or hot-rolled steel strip from an ultrahigh-strength multiphase steel having a particular composition the required multiphase microstructure is generated during continuous heat treatment. The cold- or hot-rolled steel strip is heated in the continuous heat treatment furnace to a temperature in the range from 700 to 950° C. and the heat-treated steel strip is subsequently cooled from the heat treatment temperature at a cooling rate of from 15 to 100° C./s to a first intermediate temperature of from 300 to 500° C. followed by cooling at a cooling rate of from 15 to 100° C./s to a second intermediate temperature of from 200 to 250° C.; the steel strip is subsequently cooled at a cooling rate of from 2 to 30° C./s in air to room temperature or the cooling at a cooling rate of from 15 to 100° C./s is maintained from the first intermediate temperature to room temperature. | 02-12-2015 |
Thomas Schulz, Speyer DE
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20140172738 | KNOWLEDGE BASED INITIALIZATION FOR ROUTING OPTIMIZATION - According to one general aspect, a method of transportation management may include receiving a request to transport a current freight unit from a current source location to a current destination location. The method may include selecting a prior shipment path based upon a similarity, as defined by a set of predefined criteria, between the current freight unit and a prior freight unit. The method may further include initializing a shipment path improver with the prior shipment path. The method may also include generating, via the shipment path improver, a current shipment path for the current freight unit from the current source location to the current destination location based upon the prior shipment path. | 06-19-2014 |