Patent application number | Description | Published |
20080211002 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - This semiconductor device includes: a first cylinder interlayer insulating film; a second cylinder interlayer insulating film; a cylinder hole including a first cylinder hole and a second cylinder hole communicating with the first cylinder hole; and a capacitor including a lower electrode and an upper electrode. The first cylinder interlayer insulating film has an etching rate for etchant, which is two to six times as high as an etching rate for the second cylinder interlayer insulating film, a hole diameter of the first cylinder hole is larger than that of the second cylinder hole, and the hole diameter of the second cylinder hole near an interface between the first cylinder interlayer insulating film and the second cylinder interlayer insulating film increases as the second cylinder hole approaches the interface. | 09-04-2008 |
20080239815 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a memory cell area of a semiconductor device, first, second, and third inter-layer insulating films respectively cover a cell transistor, a bit wiring line, and a capacitor which are connected to each other. In an adjacent peripheral circuit area, a peripheral-circuit transistor is covered with the first inter-layer insulating film, a first-layer wiring line connected to the peripheral-circuit transistor is provided on the first inter-layer insulating film and covered with the second inter-layer insulating film, and a second-layer wiring line is provided on the third inter-layer insulating film. In the memory cell area, a landing pad is provided on the second inter-layer insulating film and between the capacitor and a contact plug for connecting the capacitor to the cell transistor. An assist wiring line connected to the first-layer wiring line is provided on the main surface of the second inter-layer insulating film, on which the landing pad is provided. | 10-02-2008 |
20090003178 | File-Based Recordable Disc Playback Apparatus and File-Based Recordable Disc Playback Method - A file-based recordable disc playback apparatus includes a signal decrypting means | 01-01-2009 |
20090061589 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING CYLINDER-TYPE CAPACITOR STRUCTURE - A method of manufacturing a semiconductor device includes forming an inter-layer insulating film; arranging a plurality of grooves in a surface layer of the inter-layer insulating film; forming embedded insulating films which are embedded in the grooves; arranging a plurality of holes in the inter-layer insulating film and between the embedded insulating films, in a manner such that each hole between the embedded insulating films partially overlaps therewith; forming lower electrodes, each of which has a bottom and a side face, and covers the bottom and side faces of the corresponding hole; forming a capacitance insulating film which covers the lower electrodes; and forming an upper electrode which further covers the capacitance insulating film. | 03-05-2009 |
20090080303 | Storage Media Housing Device - A storage media housing device includes a housing means ( | 03-26-2009 |
20090170272 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device includes a first insulating layer, a capacitor, an adhesive layer, and an intermediate layer. The first insulating layer may include a first insulating film. The first insulating layered structure has a first hole. The capacitor is disposed in the first hole. The capacitor may include bottom and top electrodes and a capacitive insulating film. The capacitive insulating film is sandwiched between the bottom and top electrodes. The adhesive layer contacts with the bottom electrode. The adhesive layer has adhesiveness to the bottom electrode. The intermediate layer is interposed between the adhesive layer and the first insulating film. The intermediate layer contacts with the adhesive layer and with the first insulating film. The intermediate layer has adhesiveness to the adhesive layer and to the first insulating film. | 07-02-2009 |
20090179893 | IMAGE DISPLAY DEVICE, PORTABLE TERMINAL DEVICE, DISPLAY PANEL AND IMAGE DISPLAY METHOD USING THE SAME - A three-dimensional image/two-dimensional image display device includes a plurality of display pixels, and a lenticular lens for three-dimensional display. Each display pixel is consisted of M×N number of sub-pixels to be viewed from N view points. A pitch | 07-16-2009 |
20090201778 | Optical Disk Playback Device - An optical disk playback device includes a control means (an LSI | 08-13-2009 |
20100110867 | DISC PLAYBACK APPARATUS - A disc playback apparatus characterized in, when receiving either a fast-forward playback request or a fast-backward playback request, calculating a target address by setting up a position which is close to a position at which information being read from a memory and being played back is stored in a disc as a movement destination of an optical pickup, and moving the optical pickup to the above-mentioned target address. | 05-06-2010 |
20100131967 | STORAGE MEDIUM CHANGER - Characterized by checking, after stopping a stocker driving motor, whether a target pattern can be detected at the stopping position or not; and by reducing, if the target pattern cannot be detected at the stopping position, the driving force of the stocker driving motor during retrying operation carried out by reversing the rotation of the stocker driving motor. | 05-27-2010 |
20100195451 | OPTICAL DISK PLAYBACK DEVICE - An optical disk playback device includes a first control means for holding difference information which the first control means generates by, during playback of an optical disk | 08-05-2010 |
20110092036 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - After forming a first capacitor hole, first mask material is filled in an upper portion of the first capacitor hole. A second capacitor hole is formed so that it is aligned with the first capacitor hole. After removing the first mask material, a lower electrode is formed in the first and second capacitor holes by one film formation step. After that, a capacitor dielectric film and an upper electrode are sequentially formed on the lower electrode. | 04-21-2011 |
20110117718 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes forming a hole in an insulating film, forming a first conductive film in the hole, removing at least a portion of the insulating film around the first conductive film, and reducing a thickness of the first conductive film to produce a second conductive film. | 05-19-2011 |
20110266603 | SEMICONDUCTOR DEVICE - A semiconductor device may include, but is not limited to: a semiconductor substrate; a memory capacitor; and a first compensation capacitor. The semiconductor substrate has at least first and second regions. The memory capacitor is positioned over the first region. The memory capacitor may include, but is not limited to: a first lower electrode; and a first dielectric film covering inner and outer surfaces of the first lower electrode. The first compensation capacitor is positioned over the second region. The first compensation capacitor includes, but is not limited to: a second lower electrode; a second dielectric film covering an inner surface of the second lower electrode; and a first insulating film covering an outer surface of the second lower electrode. | 11-03-2011 |