Patent application number | Description | Published |
20080210985 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF - A solid-state imaging device, includes: a substrate where a region of a first conductivity type is formed on at least a portion of a surface thereof; a region of a second conductivity type formed on at least a portion of a surface of the region of the first conductivity type; a multilayer wiring layer formed on the substrate; and a layer of the second conductivity type formed directly above the region of the second conductivity type in the multilayer wiring layer, connected to the region of the second conductivity type. A concentration of impurities in the layer of the second conductivity type is lower with decreasing proximity to the region of the second conductivity type. | 09-04-2008 |
20100025791 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING SAME - An interconnect layer is formed on a lower face of a silicon wafer, a support substrate is adhered over a lower face of the interconnect layer, and a thickness reduction of the silicon wafer is performed from an upper face side. Next, a photodiode is formed in an upper face of the silicon wafer, and a microlens is formed at a position corresponding to the photodiode. An adhesive layer is formed on the silicon wafer in a region not covering the microlens, a low refractive index layer having a lower refractive index than the microlens is formed in a region covering the microlens, and a glass substrate is adhered to the silicon wafer by the adhesive layer. The support substrate is removed from the interconnect layer, and a solder ball is bonded to a lower face of the interconnect layer. Thereafter, a CMOS image sensor is manufactured by dicing the silicon wafer. | 02-04-2010 |
20110042680 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a conductive substrate; a metal film provided above the conductive substrate; a light emitting layer provided above the metal film; an electrode provided partly above the light emitting layer; and a current suppression layer being in contact with the metal film, provided in a region including at least part of an immediately underlying region of the electrode, and configured to suppress current, a first portion of the metal film including at least part of a portion located between the current suppression layer and the electrode, being separated from an portion other than the first portion. | 02-24-2011 |
20110215356 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT - According to embodiment, a light emitting element includes a light emitting layer having a first major surface and a second major surface, a first electrode provided on the first major surface side of the light emitting layer, and a second electrode provided on the second major surface side of the light emitting layer and having a basic outline. Furthermore, the light emitting element includes a current blocking portion provided between the first electrode and the light emitting layer or between the second electrode and the light emitting layer, and has an outline with a protrusion-depression pattern with respect to a virtual outline similar in shape to the basic outline of the second electrode. | 09-08-2011 |
20120056155 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers. | 03-08-2012 |
20120056222 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a light emitting layer, a first electrode layer, and a second electrode layer. The light emitting layer is between the first semiconductor layer and the second semiconductor layer. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer. The first electrode layer includes a metal portion and a plurality of opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer. The metal portion contacts the second semiconductor layer. An equivalent circular diameter of a configuration of the opening portions as viewed along the direction is not less than 10 nanometers and not more than 5 micrometers. | 03-08-2012 |
20120056232 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer. | 03-08-2012 |
20120061640 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a first electrode layer, a second semiconductor layer of a second conductivity type, a light emitting layer and a second electrode layer. The first electrode layer includes a metal portion having a plurality of opening portions. The opening portions have an equivalent circle diameter being not less than 10 nanometers and not more than 50 micrometers. The second semiconductor layer is provided between the first semiconductor layer and the first electrode layer and includes a first portion in contact with the first electrode layer. The first portion has an impurity concentration of not less than 1×10 | 03-15-2012 |
20120070958 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In a method of manufacturing a semiconductor device of an embodiment, at room temperature, a first substrate including a semiconductor laminate body is adhered to a second substrate with a smaller thermal expansion coefficient than that of the first substrate. Then, the first substrate and the second substrate are heated with the first substrate heated at a temperature higher than that of the second substrate. Thus the first substrate and the second substrate are bonded together. The first substrate is either a sapphire substrate including a nitride-based semiconductor layer, or a GaAs substrate including a phosphorus-based semiconductor layer. The second substrate is a silicon substrate, a GaAs substrate, a Ge substrate, or a metal substrate. | 03-22-2012 |
20120132948 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction. | 05-31-2012 |
20140035030 | SEMICONDUCTOR DEVICE - According to one embodiment, in a semiconductor device, a semiconductor laminated body includes a first semiconductor region of a first conductivity type and a second semiconductor region of the first conductivity type provided on the first semiconductor region and having a higher concentration of impurities than that of the first semiconductor region. A third semiconductor region includes a side surface and a lower end, the side surface and the lower end are surrounded by the semiconductor laminated body. A fourth semiconductor region of a second conductivity type is provided between the semiconductor laminated body and the third semiconductor region. A fifth semiconductor region of the first conductivity type is in contact with an outside surface of the semiconductor laminated body opposite to an inside surface of the semiconductor laminated body, the inside surface is in contact with the fourth semiconductor region. | 02-06-2014 |