Patent application number | Description | Published |
20080210971 | NICKEL TIN BONDING SYSTEM WITH BARRIER LAYER FOR SEMICONDUCTOR WAFERS AND DEVICES - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. | 09-04-2008 |
20080217635 | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 09-11-2008 |
20080296771 | METHODS OF FABRICATING SILICON CARBIDE POWER DEVICES BY AT LEAST PARTIALLY REMOVING AN N-TYPE SILICON CARBIDE SUBSTRATE, AND SILICON CARBIDE POWER DEVICES SO FABRICATED - A silicon carbide power device is fabricated by forming a p-type silicon carbide epitaxial layer on an n-type silicon carbide substrate, and forming a silicon carbide power device structure on the p-type silicon carbide epitaxial layer. The n-type silicon carbide substrate is at least partially removed, so as to expose the p-type silicon carbide epitaxial layer. An ohmic contact is formed on at least some of the p-type silicon carbide epitaxial layer that is exposed. By at least partially removing the n-type silicon carbide substrate and forming an ohmic contact on the p-type silicon carbide epitaxial layer, the disadvantages of using a p-type substrate may be reduced or eliminated. Related structures are also described. | 12-04-2008 |
20090166659 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode. | 07-02-2009 |
20090233418 | Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon - Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device. | 09-17-2009 |
20090242918 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer. | 10-01-2009 |
20090283787 | SEMICONDUCTOR LIGHT EMITTING DIODES HAVING REFLECTIVE STRUCTURES AND METHODS OF FABRICATING SAME - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode contact and/or the cathode contact may further provide a hybrid reflective structure on the first face that is configured to reflect substantially all light that emerges from the first face back into the first face. Related fabrication methods are also described. | 11-19-2009 |
20100140636 | Light Emitting Diode with Improved Light Extraction - A light emitting diode is disclosed that includes an active region and a plurality of exterior surfaces. A light enhancement feature is present on at least portions of one of the exterior surfaces of the diode, with the light enhancement feature being selected from the group consisting of shaping and texturing. A light enhancement feature is present on at least portions of each of the other exterior surfaces of the diode, with these light enhancement features being selected from the group consisting of shaping, texturing, and reflectors. | 06-10-2010 |
20100140637 | Light Emitting Diode with a Dielectric Mirror having a Lateral Configuration - A light emitting diode is disclosed that includes an active structure, a first ohmic contact on the active structure, and a transparent conductive oxide layer on the active structure opposite the first ohmic contact. The transparent conductive oxide layer has a larger footprint than said active structure. A dielectric mirror is positioned on the transparent conductive oxide layer opposite said active structure and a second contact is positioned on the transparent conductive oxide layer opposite the dielectric mirror and separated from the active structure. | 06-10-2010 |
20100155750 | Color correction for wafer level white LEDs - A method for fabricating a plurality of LED chips comprises providing a plurality of LEDs and forming a plurality of spacers each of which is on at least one of the LEDs. Coating the LEDs with a conversion material, each of the spacers reducing the amount of conversion material over its one of the LEDs. This reduction causes the plurality of LED chips to emit a wavelength of light in response to an electrical signal that is within a standard deviation of a target wavelength. LEDs, LED chips and LED chip wafers are fabricated using the method according to the present invention. One embodiment of an LED chip wafer according to the present invention comprises a plurality of LEDs on a wafer and a plurality of a spacers, each of which is on a respective one of the LEDs. A conversion material at least partially covers the LEDs and spacers, with at least some light from the LEDs passing through the conversion material and is converted. The spacers cause the LED chips to emit light having a wavelength within a standard deviation compared to the similar LED chips without the spacers where at least some of the LED chips emit light a wavelength of light outside the standard deviation. | 06-24-2010 |
20100155763 | SYSTEMS AND METHODS FOR APPLICATION OF OPTICAL MATERIALS TO OPTICAL ELEMENTS - Methods are disclosed including heating an optical element. An optical material is applied to the heated optical element to provide a conformal layer that is cured via the thermal energy in the heated optical element. | 06-24-2010 |
20100276700 | EXTERNAL EXTRACTION LIGHT EMITTING DIODE BASED UPON CRYSTALLOGRAPHIC FACETED SURFACES - A light emitting diode is disclosed that includes a support structure and a Group III nitride light emitting active structure mesa on the support structure. The mesa has its sidewalls along an indexed crystal plane of the Group III nitride. A method of forming the diode is also disclosed that includes the steps of removing a substrate from a Group III nitride light emitting structure that includes a sub-mount structure on the Group III nitride light emitting structure opposite the substrate, and thereafter etching the surface of the Group III nitride from which the substrate has been removed with an anisotropic etch to develop crystal facets on the surface in which the facets are along an index plane of the Group III nitride. The method can also include etching the light emitting structure with an anisotropic etch to form a mesa with edges along an index plane of the Group III nitride. | 11-04-2010 |
20100314633 | FRONT END SCRIBING OF LIGHT EMITTING DIODE (LED) WAFERS AND RESULTING DEVICES - A wafer of light emitting diodes (LEDs) is laser scribed to produce a laser scribing cut. Then, the wafer is cleaned, for example by wet etching, to reduce scribe damage. Then, electrical contact layers for the LEDs are formed on the wafer that has been cleaned. Alternatively, the scribing cut may be produced by multiple etches before contact formation. Related LEDs are also described. | 12-16-2010 |
20110008922 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 01-13-2011 |
20110031502 | LIGHT EMITTING DIODES INCLUDING INTEGRATED BACKSIDE REFLECTOR AND DIE ATTACH - Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer. | 02-10-2011 |
20110068351 | Method of Forming Three Dimensional Features on Light Emitting Diodes for Improved Light Extraction - A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region. | 03-24-2011 |
20110121344 | COLOR CORRECTION FOR WAFER LEVEL WHITE LEDs - A method for fabricating a plurality of LED chips comprises providing a plurality of LEDs and forming a plurality of spacers each of which is on at least one of the LEDs. Coating the LEDs with a conversion material, each of the spacers reducing the amount of conversion material over its one of the LEDs. This reduction causes the plurality of LED chips to emit a wavelength of light in response to an electrical signal that is within a standard deviation of a target wavelength. LEDs, LED chips and LED chip wafers are fabricated using the method according to the present invention. One embodiment of an LED chip wafer according to the present invention comprises a plurality of LEDs on a wafer and a plurality of a spacers, each of which is on a respective one of the LEDs. A conversion material at least partially covers the LEDs and spacers, with at least some light from the LEDs passing through the conversion material and is converted. The spacers cause the LED chips to emit light having a wavelength within a standard deviation compared to the similar LED chips without the spacers where at least some of the LED chips emit light a wavelength of light outside the standard deviation. | 05-26-2011 |
20110127568 | LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts. | 06-02-2011 |
20110180839 | Nickel Tin Bonding System with Barrier Layer for Semiconductor Wafers and Devices - A light emitting diode structure is disclosed that includes a light emitting active portion formed of epitaxial layers and carrier substrate supporting the active portion. A bonding metal system that predominates in nickel and tin joins the active portion to the carrier substrate. At least one titanium adhesion layer is between the active portion and the carrier substrate and a platinum barrier layer is between the nickel-tin bonding system and the titanium adhesion layer. The platinum layer has a thickness sufficient to substantially prevent tin in the nickel tin bonding system from migrating into or through the titanium adhesion layer. | 07-28-2011 |
20110220920 | METHODS OF FORMING WARM WHITE LIGHT EMITTING DEVICES HAVING HIGH COLOR RENDERING INDEX VALUES AND RELATED LIGHT EMITTING DEVICES - Methods of forming a light emitting device are provided in which a solid state lighting source is heated and a luminescent solution is applied to the heated solid state lighting source to form the light emitting device. The luminescent solution includes a first material that down-converts the radiation emitted by the solid state lighting source to radiation that has a peak wavelength in the green color range and that has a full width half maximum emission bandwidth that extends into the cyan color range, and at least one additional material that down-converts the radiation emitted by the solid state lighting source to radiation having a peak wavelength in another color range. | 09-15-2011 |
20110284875 | HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE - A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region. | 11-24-2011 |
20120153343 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 06-21-2012 |
20120164765 | LOCALIZED ANNEALING OF METAL-SILICON CARBIDE OHMIC CONTACTS AND DEVICES SO FORMED - A method of forming an ohmic contact for a semiconductor device can be provided by thinning a substrate to provide a reduced thickness substrate and providing a metal on the reduced thickness substrate. Laser annealing can be performed at a location of the metal and the reduced thickness substrate at an energy level to form a metal-substrate material to provide the ohmic contact thereat. | 06-28-2012 |
20120187431 | LIGHT EMITTING DIODES WITH LOW JUNCTION TEMPERATURE AND SOLID STATE BACKLIGHT COMPONENTS INCLUDING LIGHT EMITTING DIODES WITH LOW JUNCTION TEMPERATURE - A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of | 07-26-2012 |
20120193648 | CONFORMALLY COATED LIGHT EMITTING DEVICES AND METHODS FOR PROVIDING THE SAME - Methods are disclosed including applying a conformal coating to multiple light emitters. The conformal coating forms in gap areas between adjacent ones of the light emitters. The plurality of light emitters are separated into individual light emitters. The individual light emitters include the conformal coating that extends to a space corresponding to respective gap areas. Light emitting structures are disclosed including a semiconductor light emitting diode (LED) having an active region and a conformal coating including a first portion and a second portion, the first portion corresponding to at least one surface of the LED and the second portion extending from the first portion. | 08-02-2012 |
20120193649 | LIGHT EMITTING DIODE (LED) ARRAYS INCLUDING DIRECT DIE ATTACH AND RELATED ASSEMBLIES - An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds. Widths of the metallic bonds between the second anode contact and the second pad and between the second cathode contact and the third pad may be at least 60 percent of a width of the first light emitting diode die. | 08-02-2012 |
20120193651 | LIGHT EMITTING DEVICES, SYSTEMS, AND METHODS - Light emitting devices, systems, and methods are disclosed. In one embodiment a light emitting device can include an emission area having one or more light emitting diodes (LEDs) mounted over an irregularly shaped mounting area. The light emitting device can further include a retention material disposed about the emission area. The retention material can also be irregularly shaped, and can be dispensed. Light emitting device can include more than one emission area per device. | 08-02-2012 |
20120193659 | STRUCTURES AND SUBSTRATES FOR MOUNTING OPTICAL ELEMENTS AND METHODS AND DEVICES FOR PROVIDING THE SAME BACKGROUND - Methods are disclosed including generating a substrate surface topography that includes a mounting portion that is higher than a relief portion that defines a perimeter of the mounting portion. | 08-02-2012 |
20120193660 | HORIZONTAL LIGHT EMITTING DIODES INCLUDING PHOSPHOR PARTICLES - Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 μm is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount. | 08-02-2012 |
20120193661 | GAP ENGINEERING FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED. | 08-02-2012 |
20120193662 | REFLECTIVE MOUNTING SUBSTRATES FOR FLIP-CHIP MOUNTED HORIZONTAL LEDS - A light emitting device includes a mounting substrate having a reflective layer that defines spaced apart anode and cathode pads, and a gap between them. A light emitting diode die is flip-chip mounted on the mounting substrate, such that the anode contact of the LED die is bonded to the anode pad and the cathode contact of the LED die is bonded to the cathode pad. A lens extends from the mounting substrate to surround the LED die. The reflective layer extends on the mounting substrate to cover substantially all of the mounting substrate that lies beneath the lens, excluding the gap, and may also extend beyond the lens. | 08-02-2012 |
20120305949 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad. | 12-06-2012 |
20120319142 | GEL UNDERFILL LAYERS FOR LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME - A light emitting device is fabricated by providing a mounting substrate and an array of light emitting diode dies adjacent the mounting substrate to define gaps. A gel that is diluted in a solvent is applied on the substrate and on the array of light emitting dies. At least some of the solvent is evaporated so that the gel remains in the gaps, but does not completely cover the light emitting diode dies. For example, the gel substantially recedes from the substrate beyond the array of light emitting diode dies and also substantially recedes from an outer face of the light emitting diode dies. Related light emitting device structures are also described. | 12-20-2012 |
20120319148 | CONFORMAL GEL LAYERS FOR LIGHT EMITTING DIODES AND METHODS OF FABRICATING SAME - Light emitting devices include a light emitting diode die on a mounting substrate and a conformal gel layer on the mounting substrate and/or on the light emitting diode die. The conformal gel layer may at least partially fill a gap between the light emitting diode die and the mounting substrate. A phosphor layer and/or a molded dome may be provided on the conformal gel layer. The conformal gel layer may be fabricated by spraying and/or dispensing the gel that is diluted in the solvent. | 12-20-2012 |
20120326159 | LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY - Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip. | 12-27-2012 |
20130119418 | METHODS OF FORMING OPTICAL CONVERSION MATERIAL CAPS AND LIGHT EMITTING DEVICES INCLUDING PRE-FORMED OPTICAL CONVERSION MATERIAL CAPS - A method of forming can be provided by applying an optical conversion material to a mold to form a unitary layer of optical conversion material and removing the unitary layer of optical conversion material from the mold. | 05-16-2013 |
20130193453 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face, and the packaging substrate may include positive and negative electrically conductive pads on the packaging face. A plurality of light emitting diodes may be electrically and mechanically coupled to the packaging face of the packaging substrate, with the plurality of light emitting diodes being electrically coupled between the positive and negative electrically conductive pads on the packaging face. A continuous optical coating may be provided on the plurality of light emitting diodes and on the packaging face of the packaging substrate so that the plurality of light emitting diodes are between the optical coating and the packaging substrate. | 08-01-2013 |
20130292639 | LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad. | 11-07-2013 |
20130299858 | LIGHT EMITTING DIODE (LED) CONTACT STRUCTURES AND PROCESS FOR FABRICATING THE SAME - A light emitting device includes an active layer configured to provide light emission due to carrier recombination therein, a surface on the active layer, and an electrically conductive contact structure on the surface. The contact structure includes at least one plated contact layer. The contact structure may include a sublayer that conforms to the surface roughness of the underlying surface, and the plated contact layer may be substantially free of the surface roughness of the underlying surface. The surface of the plated contact layer may be substantially planar and/or otherwise configured to reflect the light emission from the active layer. Related fabrication methods are also discussed. | 11-14-2013 |
20130328096 | Semiconductor Light Emitting Diodes with Crack-Tolerant Barrier Structures and Methods of Fabricating the Same - A light emitting device includes an epitaxial region, an insulating layer on the epitaxial region, a bond pad on the insulating layer, and a crack reducing feature in the insulating layer. The crack reducing feature is configured to reduce the propagation of cracks in the insulating layer to an outside surface of the insulating layer. Related methods are also disclosed. | 12-12-2013 |
20140070245 | HIGH VOLTAGE MONOLITHIC LED CHIP - Monolithic LED chips are disclosed comprising a plurality of active regions on a submount, wherein the submount comprises integral electrically conductive interconnect elements in electrical contact with the active regions and electrically connecting at least some of the active regions in series. The submount also comprises an integral insulator element electrically insulating at least some of the interconnect elements and active regions from other elements of the submount. The active regions are mounted in close proximity to one another with at least some of the active regions having a space between adjacent ones of the active regions that is 10 percent or less of the width of one or more of the active regions. The space is substantially not visible when the LED chip is emitting, such that the LED chips emits light similar to a filament. | 03-13-2014 |
20140151735 | LATERAL SEMICONDUCTOR LIGHT EMITTING DIODES HAVING LARGE AREA CONTACTS - Light emitting diodes include a diode region having first and second opposing faces that include therein an n-type layer and a p-type layer, an anode contact that ohmically contacts the p-type layer and extends on the first face, and a cathode contact that ohmically contacts the n-type layer and also extends on the first face. The anode and cathode contacts extend on the first face to collectively cover substantially all of the first face. A small gap may be provided between the contacts. | 06-05-2014 |
20140167065 | LED STRUCTURE WITH ENHANCED MIRROR REFLECTIVITY - Embodiments of the present invention are generally related to LED chips having improved overall emission by reducing the light-absorbing effects of barrier layers adjacent mirror contacts. In one embodiment, a LED chip comprises one or more LEDs, with each LED having an active region, a first contact under the active region having a highly reflective mirror, and a barrier layer adjacent the mirror. The barrier layer is smaller than the mirror, such that it does not extend beyond the periphery of the mirror. In another possible embodiment, an insulator is further provided, with the insulator adjacent the barrier layer and adjacent portions of the mirror not contacted by the active region or by the barrier layer. In yet another embodiment, a second contact is provided on the active region. In a further embodiment, the barrier layer is smaller than the mirror such that the periphery of the mirror is at least 40% free of the barrier layer, and the second contact is below the first contact and accessible from the bottom of the chip. | 06-19-2014 |
20140167089 | HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE - A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a Group III nitride-based light emitting region including a plurality of Group III nitride-based layers. A lenticular surface directly contacts one of the Group III nitride-based layers of the light emitting region. The lenticular surface includes a transparent material that is different from the Group III nitride-based layer of the light emitting region that the lenticular surface directly contacts. | 06-19-2014 |
20140175473 | LIGHT EMITTING DIODES INCLUDING LIGHT EMITTING SURFACE BARRIER LAYERS, AND METHODS OF FABRICATING SAME - A light emitting device includes a Light Emitting Diode (LED) having a light emitting surface, a silicon nitride layer on the light emitting surface and a sealed environment surrounding the light emitting surface. The silicon nitride layer may be directly on and cover the light emitting surface. The silicon nitride layer may completely cover the light emitting surface. The silicon nitride layer may provide a substance blocking layer such as a moisture blocking layer and/or a carbon blocking layer that can prevent moisture and/or carbon, such as Volatile Organic Compounds (VOCs) that contain carbon, from reaching the light emitting surface. | 06-26-2014 |
20140217435 | Light Emitting Diodes with Low Junction Temperature and Solid State Backlight Components Including Light Emitting Diodes with Low Junction Temperature - A light emitting diode chip a support layer having a first face and a second face opposite the first face, a diode region on the first face of the support layer, and a bond pad on the second face of the support layer. The bond pad includes a gold-tin structure having a weight percentage of tin of 50% or more. The light emitting diode chip may include a plurality of active regions that are connected in electrical series on the light emitting diode chip. | 08-07-2014 |
20140217443 | CHIP WITH INTEGRATED PHOSPHOR - This disclosure relates to light emitting devices and methods of manufacture thereof, including side and/or multi-surface light emitting devices. Embodiments according to the present disclosure include the use of a functional layer, which can comprise a stand-off distance with one or more portions of the light emitter to improve the functional layer's stability during further device processing. The functional layer can further comprise winged portions allowing for the coating of the lower side portions of the light emitter to further interact with emitted light and a reflective layer coating on the functional layer to further improve light extraction and light emission uniformity. Methods of manufacture including methods utilizing virtual wafer structures are also disclosed. | 08-07-2014 |
20140268794 | RARE EARTH OPTICAL ELEMENTS FOR LED LAMP - The present disclosure relates to optical elements and coatings comprising rare-earth element (REE) compounds for light wavelength attenuation of light emitting diode (LED) elements and lamps. More particularly, the present disclosure relates to LED elements and lamps comprising wavelength attenuating elements comprising REE compounds having at least a portion of non-crystalline, non-hydrate form, methods of preparing such elements, and LED elements, LED arrays, LED packages, optical elements, lamps and systems made with same. | 09-18-2014 |
20140268808 | LED LAMP AND HYBRID REFLECTOR - A lamp comprises an enclosure having a reflective surface and an exit surface through which light is emitted from the enclosure and a base. A plurality of LEDs are located in the enclosure and are operable to emit light when energized through an electrical path from the base. The reflective surface comprises a first reflective layer applied to the enclosure and a second reflective layer over the first reflective layer. The first reflective layer is a metalized surface. The second layer comprises a transparent carrier such as silicone mixed with a reflective media such as TiO | 09-18-2014 |
20140312373 | LIGHT EMITTING DIODES HAVING GROUP III NITRIDE SURFACE FEATURES DEFINED BY A MASK AND CRYSTAL PLANES - An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed. | 10-23-2014 |
20150037918 | METHODS OF FABRICATING LIGHT EMITTING DIODES BY MASKING AND WET CHEMICAL ETCHING - An LED includes a mesa having a Group III Nitride mesa face and a mesa sidewall, on an underlying LED structure. The mesa face includes Group III Nitride surface features having tops that are defined by mask features, having bottoms, and having sides that extend along crystal planes of the Group III Nitride. The mask features may include a two-dimensional array of dots that are spaced apart from one another. Related fabrication methods are also disclosed. | 02-05-2015 |
20150069430 | Phosphor-converted light emitting device - A phosphor-converted light emitting device includes a light emitting diode (LED) on a substrate, where the LED comprises a stack of epitaxial layers comprising a p-n junction. A wavelength conversion material is in optical communication with the LED. According to one embodiment of the phosphor-converted light emitting device, a selective filter is adjacent to the wavelength conversion material, and the selective filter comprises a plurality of nanoparticles for absorbing light from the LED not down-converted by the wavelength conversion material. According to another embodiment of the phosphor-converted light emitting device, a perpendicular distance between a perimeter of the LED on the substrate and an edge of the substrate is at least about 24 microns. According to another embodiment of the phosphor-converted light emitting device, the LED comprises a mirror layer on one or more sidewalls thereof for reducing light leakage through the sidewalls. | 03-12-2015 |