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Koji Uematsu
ITAMI-SHI, JP
1. 20090236694 Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal 09-24-20092. 20080299748 Group III-V Crystal - Favorable-quality III-V crystals are easily obtained at low cost without causing cracks, even when using a variety of substrates 12-04-2008
3. 20080296585 GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 12-04-2008
4. 20080217745 Nitride Semiconductor Wafer - nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices 09-11-2008
5. 20080210959 Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily 09-04-2008
