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Katsushi Akita
ITAMI-SHI, JP
1. 20090212277 GROUP-III NITRIDE LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING GROUP-III NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 08-27-20092. 20080308906 GaN SUBSTRATE, SUBSTRATE WITH EPITAXIAL LAYER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING GaN SUBSTRATE 12-18-2008
3. 20080308815 GaN Substrate, Substrate with an Epitaxial Layer, Semiconductor Device, and GaN Substrate Manufacturing Method 12-18-2008
4. 20080283851 GaN Substrate, and Epitaxial Substrate and Semiconductor Light-Emitting Device Employing the Substrate 11-20-2008
5. 20080210959 Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily 09-04-2008