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Makoto Kiyama
ITAMI-SHI, JP
1. 20090194796 Vertical Gallium Nitride Semiconductor Device and Epitaxial Substrate 08-06-20092. 20090189190 High Electron Mobility Transistor, Field-Effect Transistor, Epitaxial Substrate, Method of Manufacturing Epitaxial Substrate, and Method of Manufacturing Group III Nitride Transistor 07-30-2009
3. 20080210959 Light emitting apparatus - In order to provide light emitting devices which have simple constructions and thus can be fabricated easily 09-04-2008