Patent application number | Description | Published |
20080210925 | THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS - A switching circuit configured for controlling static power consumption in integrated circuits includes a plurality of three-terminal, phase change material (PCM) switching devices connected between a voltage supply terminal and a corresponding sub-block of integrated circuit logic. Each of the PCM switching devices further includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration. | 09-04-2008 |
20080224118 | HEAT-SHIELDED LOW POWER PCM-BASED REPROGRAMMABLE EFUSE DEVICE - An electrically re-programmable fuse (eFUSE) device for use in integrated circuit devices includes an elongated heater element, an electrically insulating liner surrounding an outer surface of the elongated heater element, corresponding to a longitudinal axis thereof, leaving opposing ends of the elongated heater element in electrical contact with first and second heater electrodes. A phase change material (PCM) surrounds a portion of an outer surface of the electrically insulating liner, a thermally and electrically insulating layer surrounds an outer surface of the PCM, with first and second fuse electrodes in electrical contact with opposing ends of the PCM. The PCM is encapsulated within the electrically insulating liner, the thermally and electrically insulating layer, and the first and second fuse electrodes. | 09-18-2008 |
20080285335 | PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES USING EXTERNALLY HEATED PHASE CHANGE MATERIAL - A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material. | 11-20-2008 |
20090014885 | Four-Terminal Reconfigurable Devices - Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate, a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer. | 01-15-2009 |
20090033358 | PROGRAMMABLE VIA DEVICES IN BACK END OF LINE LEVEL - Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap. | 02-05-2009 |
20090033360 | PROGRAMMABLE VIA DEVICES WITH AIR GAP ISOLATION - Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap. | 02-05-2009 |
20090039331 | PHASE CHANGE MATERIAL STRUCTURES - Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM). | 02-12-2009 |
20090045388 | PHASE CHANGE MATERIAL STRUCTURE AND RELATED METHOD - A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM). | 02-19-2009 |
20090065761 | PROGRAMMABLE FUSE/NON-VOLATILE MEMORY STRUCTURES IN BEOL REGIONS USING EXTERNALLY HEATED PHASE CHANGE MATERIAL - A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via. | 03-12-2009 |
20090072213 | Programmable Via Structure for Three Dimensional Integration Technology - A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof | 03-19-2009 |
20090262572 | MULTILAYER STORAGE CLASS MEMORY USING EXTERNALLY HEATED PHASE CHANGE MATERIAL - A multi-layer, phase change material (PCM) memory apparatus includes a plurality of semiconductor layers sequentially formed over a base substrate, wherein each layer comprises an array of memory cells formed therein, each memory cell further including a PCM element, a first diode serving as a heater diode in thermal proximity to the PCM element and configured to program the PCM element to one of a low resistance crystalline state and a high resistance amorphous state, and a second diode serving a sense diode for a current path used in reading the state of the PCM element; the base substrate further including decoding, programming and sensing circuitry formed therein, with each of the plurality of semiconductor layers spaced by an insulating layer; and intralayer wiring for communication between the base substrate circuitry and the array of memory cells in each of the semiconductor layers. | 10-22-2009 |
20090305460 | Programmable Via Devices with Air Gap Isolation - Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; a heater over the first dielectric layer; an air gap separating at least a portion of the heater from the first dielectric layer; an isolation layer over the first dielectric layer covering at least a portion of the heater; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap. | 12-10-2009 |
20090311858 | PROGRAMMABLE VIA STRUCTURE AND METHOD OF FABRICATING SAME - A programmable via structure is provided as well as a method of fabricating the same. The inventive programmable via a semiconductor substrate. An oxide layer such as a thermal oxide is located on a surface of the semiconductor substrate. A patterned heating material is located on a surface of the oxide layer. The inventive structure also includes a patterned dielectric material having a least one via filled with a phase change material (PCM). The patterned dielectric material including the PCM filled via is located on a surface of the patterned heating material. A patterned diffusion barrier is located on an exposed surface of said at least one via filled with the phase change material. The inventive structure also includes contact vias that extend through the patterned dielectric material. The contact vias are filled with a conductive material which also extends onto the upper surface of the patterned dielectric material. A conductive material which serves as the input of the device is located atop the patterned diffusion barrier that is located directly above the via that is filled with the phase change material. | 12-17-2009 |
20090315010 | THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS - A three-terminal switching device for use in integrated circuit devices, including a phase change material (PCM) disposed in contact between a first terminal and a second terminal; a heating device disposed in direct electrical contact between said second terminal and a third terminal, said heating device positioned proximate said PCM, and configured to switch the conductivity of a transformable portion of said PCM between a lower resistance crystalline state and a higher resistance amorphous state; and an insulating layer configured to electrically isolate said heater from said PCM material, and said heater from said first terminal. | 12-24-2009 |
20090321710 | THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS - A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration. | 12-31-2009 |
20100038621 | Four-Terminal Reconfigurable Devices - Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer. | 02-18-2010 |
20100073997 | PIEZO-DRIVEN NON-VOLATILE MEMORY CELL WITH HYSTERETIC RESISTANCE - A piezoelectrically programmed, non-volatile memory cell structure includes a programmable piezo-resistive hysteretic material (PRHM) that is capable of being interconverted between a low resistance state and high resistance state through applied pressure cycling thereto; a piezoelectric material mechanically coupled to the PHRM such that an applied voltage across the piezoelectric material results in one of a tensile or compressive stress applied to the PRHM, depending upon the polarity of the applied voltage; and one or more electrodes in electrical communication with the PRHM, wherein the one or more electrodes are configured to provide a write programming current path through the piezoelectric material and a read current path through the PRHM. | 03-25-2010 |
20110102016 | Four-Terminal Reconfigurable Devices - Reconfigurable devices and methods for the fabrication thereof are provided. In one aspect, a reconfigurable device is provided. The reconfigurable device comprises a substrate; a first dielectric layer on the substrate; a conductive layer recessed into at least a portion of a side of the first dielectric layer opposite the substrate; at least one second dielectric layer over the side of the first dielectric layer opposite the substrate, so as to cover the conductive layer; a heater within the second dielectric layer; at least one programmable via extending through the second dielectric layer, extending through and surrounded by the heater and in contact with the conductive layer, the programmable via comprising at least one phase change material; a capping layer over the programmable via; a first conductive via and a second conductive via, each extending through the second dielectric layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive layer. | 05-05-2011 |
20110217836 | Programmable Via Devices in Back End of Line Level - Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided. The programmable via device comprises a first dielectric layer; at least one isolation layer over the first dielectric layer; a heater within the isolation layer; a capping layer over a side of the isolation layer opposite the first dielectric layer; at least one programmable via extending through the capping layer and at least a portion of the isolation layer and in contact with the heater, the programmable via comprising at least one phase change material; a conductive cap over the programmable via; a second dielectric layer over a side of the capping layer opposite the isolation layer; a first conductive via and a second conductive via, each extending through the second dielectric layer, the capping layer and at least a portion of the isolation layer and in contact with the heater; and a third conductive via extending through the second dielectric layer and in contact with the conductive cap. | 09-08-2011 |
20120153248 | THREE-TERMINAL CASCADE SWITCH FOR CONTROLLING STATIC POWER CONSUMPTION IN INTEGRATED CIRCUITS - A switching circuit includes a plurality of three-terminal PCM switching devices connected between a voltage supply terminal and a sub-block of logic. Each of the switching devices includes a PCM disposed in contact between a first terminal and a second terminal, a heating device disposed in contact between the second terminal and a third terminal, the heating device positioned proximate the PCM, and configured to switch the conductivity of a transformable portion of the PCM between a lower resistance state and a higher resistance state; and an insulating layer configured to electrically isolate the heater from said PCM material, and the heater from the first terminal. The third terminal of a first of the PCM switching devices is coupled to a set/reset switch, and the third terminal of the remaining PCM switching devices is coupled to the second terminal of an adjacent PCM switching device in a cascade configuration. | 06-21-2012 |